公开(公告)号：US07604011B2

公开(公告)日：2009-10-20

申请号：US11670631

申请日：2007-02-02

申请人： Fred C. Redeker ,  John M. Boyd ,  John Parks

发明人： Fred C. Redeker ,  John M. Boyd ,  John Parks

IPC分类号： B08B3/12 ,  B08B7/02

CPC分类号： B08B3/12 ,  B08B7/0021 ,  H01L21/67057 ,  Y10S134/902

摘要： An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.

摘要翻译： 提供了一种使用高频声能与超临界流体来执行半导体晶片（“晶片”）清洁工艺的装置和方法。 高频声能被施加到超临界流体以赋予存在于晶片表面上的颗粒污染物的能量。 通过高频声能和超临界流体赋予颗粒污染物的能量被用来移除和去除晶片上的颗粒污染物。 此外，晶片清洗过程受益于近零表面张力，高扩散性，高密度和化学混合能力的超临界流体性质。

公开(公告)号：US07191787B1

公开(公告)日：2007-03-20

申请号：US10357664

申请日：2003-02-03

申请人： Fred C. Redeker ,  John M. Boyd ,  John Parks

发明人： Fred C. Redeker ,  John M. Boyd ,  John Parks

IPC分类号： B06B3/12

CPC分类号： B08B3/12 ,  B08B7/0021 ,  H01L21/67057 ,  Y10S134/902

摘要： An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.

摘要翻译： 提供了一种使用高频声能与超临界流体来执行半导体晶片（“晶片”）清洁工艺的装置和方法。 高频声能被施加到超临界流体以赋予存在于晶片表面上的颗粒污染物的能量。 通过高频声能和超临界流体赋予颗粒污染物的能量被用来移除和去除晶片上的颗粒污染物。 此外，晶片清洗过程受益于近零表面张力，高扩散性，高密度和化学混合能力的超临界流体性质。

公开(公告)号：US20080271992A1

公开(公告)日：2008-11-06

申请号：US10882712

申请日：2004-06-30

申请人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

发明人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

IPC分类号： C25D17/00

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

摘要翻译： 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。

公开(公告)号：US07040332B2

公开(公告)日：2006-05-09

申请号：US10377943

申请日：2003-02-28

申请人： John M. Boyd ,  Fred C. Redeker ,  Randolph E. Treur ,  William Thie

发明人： John M. Boyd ,  Fred C. Redeker ,  Randolph E. Treur ,  William Thie

IPC分类号： B08B3/12

CPC分类号： H01L21/67057 ,  B08B3/12 ,  Y10S134/902

摘要： A system for cleaning a substrate includes a tank defining an inner cavity between a base and sidewalls extending therefrom. A source of acoustic energy affixed to an outer surface of one of the sidewalls. The tank is configured to decouple a direction associated with the acoustic energy from the source of acoustic energy and direct the acoustic energy toward the substrate.

摘要翻译： 用于清洁基底的系统包括限定在基底和从其延伸的侧壁之间的内腔的罐。 声能源固定在一个侧壁的外表面上。 该箱被配置成将与声能相关联的方向与声能源分离，并将声能引导到基板。

公开(公告)号：US07645364B2

公开(公告)日：2010-01-12

申请号：US10882712

申请日：2004-06-30

申请人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

发明人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

IPC分类号： C25D21/00

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

摘要翻译： 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时，电镀头能够在晶片表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。

公开(公告)号：US07252097B2

公开(公告)日：2007-08-07

申请号：US10606022

申请日：2003-06-24

申请人： John M. Boyd ,  John M. de Larios ,  Michael Ravkin ,  Fred C. Redeker

发明人： John M. Boyd ,  John M. de Larios ,  Michael Ravkin ,  Fred C. Redeker

IPC分类号： B08B3/00 ,  B08B7/04

CPC分类号： H01L21/67028 ,  G03F7/70341 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

摘要： A system and method for processing a wafer includes applying a process to the wafer. The process being supported by a surface tension gradient device. A result of the process is monitored. The monitored result is output.

摘要翻译： 用于处理晶片的系统和方法包括将工艺应用于晶片。 该过程由表面张力梯度装置支撑。 监视该过程的结果。 输出监视结果。

公开(公告)号：US07108591B1

公开(公告)日：2006-09-19

申请号：US10816418

申请日：2004-03-31

申请人： John M. Boyd ,  Fred C. Redeker ,  Yezdi Dordi

发明人： John M. Boyd ,  Fred C. Redeker ,  Yezdi Dordi

IPC分类号： B24B5/02 ,  B24B7/04 ,  B24B1/00

CPC分类号： B24B37/30

摘要： A semiconductor substrate support is provided. The semiconductor substrate support includes a chuck configured to change between a compliant state and a rigid state. An electromagnetic field source configured to apply an electromagnetic field to the chuck is included. The electromagnetic field causes the chuck to change from the compliant state to the rigid state. A method for supporting a semiconductor substrate and a system for cleaning a substrate and an apparatus are also provided.

摘要翻译： 提供半导体衬底支撑。 半导体衬底支撑件包括构造成在柔顺状态和刚性状态之间变化的卡盘。 包括被配置为向卡盘施加电磁场的电磁场源。 电磁场使卡盘从顺从状态转变为刚性状态。 还提供了一种用于支撑半导体衬底的方法和用于清洁衬底和装置的系统。

公开(公告)号：US20100108652A1

公开(公告)日：2010-05-06

申请号：US12687106

申请日：2010-01-13

申请人： John M. Boyd ,  Fred C. Redeker

发明人： John M. Boyd ,  Fred C. Redeker

IPC分类号： B23K26/00

CPC分类号： H01L21/02052 ,  B08B3/04 ,  B23K26/1224 ,  B23K26/146 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67092 ,  H01L21/78

摘要： A substrate processing system includes a first, movable surface tension gradient device, a dicing device and a system controller. The first, movable surface tension gradient device is capable of supporting a first process within a first meniscus. The first meniscus being supported between the first surface tension gradient device and a first surface of the substrate. The first movable surface tension gradient device capable of being moved relative to the first surface of the substrate. The dicing device is oriented to a desired dicing location. The desired dicing location being encompassed by the meniscus. The system controller is coupled to the dicing device and the surface tension gradient device. The system controller includes a process recipe. A method for dicing a substrate is also described. The method of dicing a substrate including placing a substrate in a substrate dicing system, forming a meniscus between a proximity head and a first surface of the substrate, dicing the substrate at a desired dicing location and simultaneously capturing any particles and contaminants generated by dicing the substrate within the meniscus, the meniscus including the desired dicing location and moving the meniscus in a desired dicing direction.

摘要翻译： 基板处理系统包括第一可动表面张力梯度装置，切割装置和系统控制器。 第一可移动表面张力梯度装置能够支撑第一弯液面内的第一过程。 第一弯液面被支撑在第一表面张力梯度装置和基板的第一表面之间。 能够相对于基板的第一表面移动的第一可动表面张力梯度装置。 切割装置被定向到期望的切割位置。 期望的切割位置被弯液面包围。 系统控制器耦合到切割装置和表面张力梯度装置。 系统控制器包括处理配方。 还描述了用于切割基底的方法。 一种切割衬底的方法，包括将衬底放置在衬底切割系统中，在接近头部和衬底的第一表面之间形成弯液面，将衬底切割在期望的切割位置，同时捕获通过切割所产生的任何颗粒和污染物 底物在弯液面内，弯月面包括期望的切割位置，并且以期望的切割方向移动弯月面。

公开(公告)号：US07675000B2

公开(公告)日：2010-03-09

申请号：US11016381

申请日：2004-12-16

申请人： John M. Boyd ,  Fred C. Redeker

发明人： John M. Boyd ,  Fred C. Redeker

IPC分类号： B23K26/14 ,  B23K26/16

CPC分类号： H01L21/02052 ,  B08B3/04 ,  B23K26/1224 ,  B23K26/146 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67092 ,  H01L21/78

摘要： A substrate processing system includes a first, movable surface tension gradient device, a dicing device and a system controller. The first, movable surface tension gradient device is capable of supporting a first process within a first meniscus. The first meniscus being supported between the first surface tension gradient device and a first surface of the substrate. The first movable surface tension gradient device capable of being moved relative to the first surface of the substrate. The dicing device is oriented to a desired dicing location. The desired dicing location being encompassed by the meniscus. The system controller is coupled to the dicing device and the surface tension gradient device. The system controller includes a process recipe. A method for dicing a substrate is also described.

摘要翻译： 基板处理系统包括第一可动表面张力梯度装置，切割装置和系统控制器。 第一可移动表面张力梯度装置能够支撑第一弯液面内的第一过程。 第一弯液面被支撑在第一表面张力梯度装置和基板的第一表面之间。 能够相对于基板的第一表面移动的第一可动表面张力梯度装置。 切割装置被定向到期望的切割位置。 期望的切割位置被弯液面包围。 系统控制器耦合到切割装置和表面张力梯度装置。 系统控制器包括处理配方。 还描述了用于切割衬底的方法。

公开(公告)号：US07252736B1

公开(公告)日：2007-08-07

申请号：US10816504

申请日：2004-03-31

申请人： John M. Boyd ,  Fred C. Redeker ,  Yezdi Dordi

发明人： John M. Boyd ,  Fred C. Redeker ,  Yezdi Dordi

IPC分类号： B24B1/00 ,  B24B5/02

CPC分类号： B24B7/228 ,  B24D13/142

摘要： A pre-planarization module configured to perform a long range planarization operation is provided. The pre-planarization module includes a semiconductor substrate support configured to rotate about a first axis. The pre-planarization module also includes an annular ring having a first side with a compliant layer affixed thereto. The second side of the compliant layer is affixed to a planarizing surface. The annular ring is configured to move perpendicular and parallel to a plane associated with the substrate support. Additionally, the annular ring is configured to rotate about a second axis, where the second axis is offset from the first axis. The substrate support and the annular ring rotate in the same direction. A method for performing a planarization process and a substrate grinding device are also provided.

摘要翻译： 提供了一种配置成执行长距离平面化操作的预平面化模块。 预平坦化模块包括构造成围绕第一轴线旋转的半导体衬底支撑件。 预平坦化模块还包括环形环，其具有固定到其上的柔性层的第一侧。 柔性层的第二面固定在平坦化表面上。 环形环被配置为垂直并平行于与衬底支撑件相关联的平面移动。 另外，环形环被构造成围绕第二轴线旋转，其中第二轴线从第一轴线偏移。 基板支撑件和环形圈沿相同的方向旋转。 还提供了一种用于执行平面化处理的方法和基板研磨装置。