公开(公告)号：US20220199812A1

公开(公告)日：2022-06-23

申请号：US17129486

申请日：2020-12-21

Applicant: Intel Corporation

Inventor： Carl Naylor ,  Chelsey Dorow ,  Kevin O'Brien ,  Sudarat Lee ,  Kirby Maxey ,  Ashish Verma Penumatcha ,  Tanay Gosavi ,  Patrick Theofanis ,  Chia-Ching Lin ,  Uygar Avci ,  Matthew Metz ,  Shriram Shivaraman

IPC: H01L29/76 ,  H01L29/24 ,  H01L27/092 ,  H01L21/8256 ,  H01L21/02

Abstract: Transistor structures with monocrystalline metal chalcogenide channel materials are formed from a plurality of template regions patterned over a substrate. A crystal of metal chalcogenide may be preferentially grown from a template region and the metal chalcogenide crystals then patterned into the channel region of a transistor. The template regions may be formed by nanometer-dimensioned patterning of a metal precursor, a growth promoter, a growth inhibitor, or a defected region. A metal precursor may be a metal oxide suitable, which is chalcogenated when exposed to a chalcogen precursor at elevated temperature, for example in a chemical vapor deposition process.

公开(公告)号：US11367749B2

公开(公告)日：2022-06-21

申请号：US16022564

申请日：2018-06-28

Applicant: Intel Corporation

Inventor： Noriyuki Sato ,  Angeline Smith ,  Tanay Gosavi ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Kevin O'Brien ,  Tofizur Rahman ,  Gary Allen ,  Atm G. Sarwar ,  Ian Young ,  Hui Jae Yoo ,  Christopher Wiegand ,  Benjamin Buford

IPC: H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01F10/32 ,  H01L43/12 ,  H01F41/34

Abstract: A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device with one end coupled with a first electrode and an opposite end coupled with a second electrode including a spin orbit torque material. In an embodiment, a second electrode is coupled with the free magnet and coupled between a pair of interconnect line segments. The second electrode and the pair of interconnect line segments include a spin orbit torque material. The second electrode has a conductive path cross-section that is smaller than a cross section of the conductive path in at least one of the interconnect line segments.

公开(公告)号：US11264558B2

公开(公告)日：2022-03-01

申请号：US16128426

申请日：2018-09-11

Applicant: Intel Corporation

Inventor： Sasikanth Manipatruni ,  Kaan Oguz ,  Chia-Ching Lin ,  Christopher Wiegand ,  Tanay Gosavi ,  Ian Young

IPC: H01L43/02 ,  H01F10/32 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

Abstract: An apparatus is provided which comprises: a magnetic junction including: a stack of structures including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device, wherein the first structure has a first dimension along the x-y plane and a second dimension in the z-plane, wherein the second dimension is substantially greater than the first dimension. The magnetic junction includes a second structure comprising one of a dielectric or metal; and a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and an interconnect adjacent to the third structure, wherein the interconnect comprises a spin orbit material.

公开(公告)号：US11251365B2

公开(公告)日：2022-02-15

申请号：US15942231

申请日：2018-03-30

Applicant: Intel Corporation

Inventor： Tanay Gosavi ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Ian Young ,  Kevin O'Brien ,  Gary Allen ,  Noriyuki Sato

IPC: H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/14 ,  B82Y25/00

Abstract: An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect comprises an antiferromagnetic (AFM) material which is doped with a doping material (Pt, Ni, Co, or Cr) and a structure adjacent to the interconnect such that the magnetic junction and the structure are on opposite surfaces of the interconnect, wherein the structure comprises a magnet with a second magnetization substantially different from the first magnetization.

公开(公告)号：US20210408375A1

公开(公告)日：2021-12-30

申请号：US16915600

申请日：2020-06-29

Applicant: Intel Corporation

Inventor： Chelsey Dorow ,  Kevin O'Brien ,  Carl Naylor ,  Uygar Avci ,  Sudarat Lee ,  Ashish Verma Penumatcha ,  Chia-Ching Lin ,  Tanay Gosavi ,  Shriram Shivaraman ,  Kirby Maxey

IPC: H01L45/00 ,  H01L27/24

Abstract: A transistor includes a channel including a first layer including a first monocrystalline transition metal dichalcogenide (TMD) material, where the first layer is stoichiometric and includes a first transition metal. The channel further includes a second layer above the first layer, the second layer including a second monocrystalline TMD material, where the second monocrystalline TMD material includes a second transition metal and oxygen, and where the second layer is sub-stoichiometric. The transistor further includes a gate electrode above a first portion of the channel layer, a gate dielectric layer between the channel layer and the gate electrode, a source contact on a second portion of the channel layer and a drain contact on a third portion of the channel layer, where the gate electrode is between drain contact and the source contact.

公开(公告)号：US11062752B2

公开(公告)日：2021-07-13

申请号：US16246358

申请日：2019-01-11

Applicant: Intel Corporation

Inventor： Tofizur Rahman ,  James Pellegren ,  Angeline Smith ,  Christopher Wiegand ,  Noriyuki Sato ,  Tanay Gosavi ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Kevin O'Brien ,  Benjamin Buford ,  Ian Young

IPC: G11C11/16 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

Abstract: A perpendicular spin orbit torque memory device includes a first electrode having tungsten and at least one of nitrogen or oxygen and a material layer stack on a portion of the first electrode. The material layer stack includes a free magnet, a fixed magnet above the first magnet, a tunnel barrier between the free magnet and the fixed magnet and a second electrode coupled with the fixed magnet.

公开(公告)号：US20200227104A1

公开(公告)日：2020-07-16

申请号：US16246358

申请日：2019-01-11

Applicant: Intel Corporation

Inventor： Tofizur Rahman ,  James Pellegren ,  Angeline Smith ,  Christopher Wiegand ,  Noriyuki Sato ,  Tanay Gosavi ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Kevin O'Brien ,  Benjamin Buford ,  Ian Young

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/12

Abstract: A perpendicular spin orbit torque memory device includes a first electrode having tungsten and at least one of nitrogen or oxygen and a material layer stack on a portion of the first electrode. The material layer stack includes a free magnet, a fixed magnet above the first magnet, a tunnel barrier between the free magnet and the fixed magnet and a second electrode coupled with the fixed magnet.

公开(公告)号：US20200212193A1

公开(公告)日：2020-07-02

申请号：US16238419

申请日：2019-01-02

Applicant: Intel Corporation

Inventor： Tanay Gosavi ,  Chia-ching Lin ,  Raseong Kim ,  Ashish Verma Penumatcha ,  Uygar Avci ,  Ian Young

IPC: H01L29/51 ,  H01L27/088 ,  H01L29/423 ,  H03H9/17 ,  H01L29/78

Abstract: Describe is a resonator that uses anti-ferroelectric (AFE) materials in the gate of a transistor as a dielectric. The use of AFE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, additional current drive is also achieved from the piezoelectric response generated to due to AFE material. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above or below the AFE based transistor. Increased drive signal from the AFE results in larger output signal and larger bandwidth.

公开(公告)号：US20200162024A1

公开(公告)日：2020-05-21

申请号：US16192841

申请日：2018-11-16

Applicant: Intel Corporation

Inventor： Dmitri E. Nikonov ,  Raseong Kim ,  Sasikanth Manipatruni ,  Ian A. Young ,  Gary Alfred Allen ,  Tanay Gosavi

IPC: H03B5/24 ,  H01L29/78 ,  H01L27/06

Abstract: Embodiments may relate to a piezoresistive oscillator. The oscillator may include a fin field-effect transistor (FinFET) with a source electrode, a drain electrode, and a gate electrode. The oscillator may further include an electrical coupling coupled with the FinFET, wherein the electrical coupling electrically couples the gate electrode to the source electrode or the drain electrode. Other embodiments may be described or claimed.

公开(公告)号：US20200083286A1

公开(公告)日：2020-03-12

申请号：US16128422

申请日：2018-09-11

Applicant: Intel Corporation

Inventor： Sasikanth Manipatruni ,  Christopher Wiegand ,  Tanay Gosavi ,  Ian Young

IPC: H01L27/22 ,  H01L27/12 ,  H01L43/02 ,  H01L43/10

Abstract: An apparatus is provided which comprises: a magnetic junction (e.g., a magnetic tunneling junction or spin valve). The apparatus further includes a structure (e.g., an interconnect) comprising spin orbit material, the structure adjacent to the magnetic junction; first and second transistors. The first transistor is coupled to a bit-line and a first word-line, wherein the first transistor is adjacent to the magnetic junction. The second transistor is coupled to a first select-line and a second word-line, wherein the second transistor is adjacent to the structure, wherein the interconnect is coupled to a second select-line, and wherein the magnetic junction is between the first and second transistors.