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    LOW-EMISSIVITY PANELS INCLUDING MAGNETIC LAYERS
    72.
    发明申请
    LOW-EMISSIVITY PANELS INCLUDING MAGNETIC LAYERS 有权
    包括磁性层的低功率面板

    公开(公告)号：US20140268301A1

    公开(公告)日：2014-09-18

    申请号：US14144319

    申请日：2013-12-30

    Applicant: Intermolecular Inc.

    Inventor： Guowen Ding ,  Minh Huu Le

    IPC: G02F1/09

    CPC classification number: G02B5/208 ,  B29D11/00865 ,  C03C17/36 ,  C03C17/3626 ,  C03C17/3639 ,  C03C17/3644 ,  C03C17/366 ,  C03C17/3681 ,  C03C23/007 ,  C03C2217/43 ,  C03C2217/48 ,  C03C2218/154 ,  C23C14/083 ,  C23C14/085 ,  C23C14/14 ,  C23C14/22 ,  E06B9/24 ,  E06B2009/2417 ,  E06B2009/2464 ,  G02B5/26 ,  G02F1/091 ,  G02F2001/094 ,  Y10T428/24975 ,  Y10T428/265

    Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a first substrate. The first substrate may have a first side and a second side. The low emissivity panels may also include a magnetic fluid layer deposited over the first side of the first substrate and a reflective layer deposited over the second side of the first substrate. The magnetic fluid layer may include magnetic particles. The reflective layer may include a conductive material configured to conduct an electrical current and generate a magnetic field. The magnetic field may be configured to change an orientation of the magnetic particles in the magnetic fluid layer and a transmissivity of the magnetic fluid layer within a visible spectrum. The low emissivity panels may also include a first bus and a second bus deposited along opposite edges of the reflective layer and electrically connected to the reflective layer.

    Abstract translation: 本文公开了用于形成可包括第一基板的低辐射面板的系统，方法和装置。 第一基板可以具有第一侧和第二侧。 低辐射面板还可以包括沉积在第一衬底的第一侧上的磁性流体层和沉积在第一衬底的第二侧上的反射层。 磁性流体层可以包括磁性颗粒。 反射层可以包括被配置为传导电流并产生磁场的导电材料。 磁场可以被配置为改变磁性流体层中的磁性颗粒的取向和磁性流体层在可见光谱内的透射率。 低辐射面板还可以包括沿着反射层的相对边缘沉积并电连接到反射层的第一总线和第二总线。

    Barrier Layers for Silver Reflective Coatings and HPC Workflows for Rapid Screening of Materials for Such Barrier Layers
    74.
    发明申请
    Barrier Layers for Silver Reflective Coatings and HPC Workflows for Rapid Screening of Materials for Such Barrier Layers 审中-公开
    银色反射涂层屏障层和HPC工作流程，用于快速筛选这种阻挡层的材料

    公开(公告)号：US20140178578A1

    公开(公告)日：2014-06-26

    申请号：US13727115

    申请日：2012-12-26

    Applicant: INTERMOLECULAR, INC.

    Inventor： Guizhen Zhang ,  Jeremy Cheng ,  Guowen Ding ,  Minh Huu Le ,  Daniel Schweigert ,  Yu Wang

    IPC: B05D5/06

    CPC classification number: C23C14/352 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00596 ,  B01J2219/00659 ,  B01J2219/0075 ,  C03C17/36 ,  C03C17/3644 ,  C03C17/3652 ,  C03C17/366 ,  C23C14/165 ,  C23C14/3492

    Abstract: Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium −25-30%, titanium and aluminum −30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer.

    Abstract translation: 提供了半导体衬底的高生产率组合（HPC）测试方法，每个包括多个现场隔离区域。 位置隔离区域用于测试布置在银反射器上的阻挡层的不同组成和/或结构。 经测试的阻挡层可以包括镍，铬，钛和铝中的全部或至少两种。 在一些实施例中，阻挡层包括氧。 该组合允许使用具有高透明度的相对薄的阻挡层（例如5-30埃厚），同时为银反射器提供足够的保护。 阻挡层中的镍的量可以为5-10重量％，铬-25-30％，钛和铝各自为-30％-35％。 阻挡层可以在反应性或惰性环境中使用包括所有四种金属的一种或多种目标共溅射。 物品可以包括多个银反射器，每个具有其自己的阻挡层。

    Anti-Glare Glass/Substrate Via Novel Specific Combinations of Dry and Wet Processes
    76.
    发明申请
    Anti-Glare Glass/Substrate Via Novel Specific Combinations of Dry and Wet Processes 审中-公开
    抗眩光玻璃/底物通过干法和湿法工艺的新型特异性组合

    公开(公告)号：US20140161990A1

    公开(公告)日：2014-06-12

    申请号：US13711986

    申请日：2012-12-12

    Applicant: INTERMOLECULAR, INC.

    Inventor： Nikhil Kalyankar ,  Scott Jewhurst ,  Minh Huu Le

    IPC: C23C16/44

    CPC classification number: C23C14/024 ,  C23C14/58 ,  C23C14/5873 ,  C23C16/56

    Abstract: Methods for depositing layers by PVD, wherein the PVD process parameters are selected to impart porosity in the layer are described. The porous layers are then exposed to a vapor or liquid binder material to fill the pores and increase the mechanical strength of the layer and the adhesion of the layer. Optionally, a curing step may be applied to the layer. Methods for depositing polycrystalline metal oxide layers using PVD or CVD are described. Optionally, the layers are exposed to an anneal step. The polycrystalline metal oxide layers are then exposed to a vapor or liquid texturing reagent to texture the surface of the layer.

    Abstract translation: 描述了通过PVD沉积层的方法，其中选择PVD工艺参数以赋予层中的孔隙率。 然后将多孔层暴露于蒸汽或液体粘合剂材料以填充孔隙并增加层的机械强度和层的粘附性。 任选地，固化步骤可以施加到该层。 描述了使用PVD或CVD沉积多晶金属氧化物层的方法。 任选地，将这些层暴露于退火步骤。 然后将多晶金属氧化物层暴露于蒸气或液体变形试剂以对该层的表面进行织构。

    Resistive Random Access Memory Cells Having Doped Current Limiting layers
    77.
    发明申请
    Resistive Random Access Memory Cells Having Doped Current Limiting layers 有权
    具有掺杂电流限制层的电阻随机存取存储器单元

    公开(公告)号：US20140124725A1

    公开(公告)日：2014-05-08

    申请号：US13671824

    申请日：2012-11-08

    Applicant: INTERMOLECULAR, INC.

    Inventor： David Chi ,  Vidyut Gopal ,  Minh Huu Le ,  Minh Anh Nguyen ,  Dipankar Pramanik ,  Milind Weling

    IPC: H01L45/00

    CPC classification number: H01L45/145 ,  G11C13/0007 ,  G11C2213/32 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/1616

    Abstract: Provided are semiconductor devices, such as resistive random access memory (ReRAM) cells, that include current limiting layers formed from doped metal oxides and/or nitrides. These current limiting layers may have resistivities of at least about 1 Ohm-cm. This resistivity level is maintained even when the layers are subjected to strong electrical fields and/or high temperature annealing. In some embodiments, the breakdown voltage of a current limiting layer may be at least about 8V. Some examples of such current limiting layers include titanium oxide doped with niobium, tin oxide doped with antimony, and zinc oxide doped with aluminum. Dopants and base materials may be deposited as separate sub-layers and then redistributed by annealing or may be co-deposited using reactive sputtering or co-sputtering. The high resistivity of the layers allows scaling down the size of the semiconductor devices including these layer while maintaining their performance.

    Abstract translation: 提供了诸如电阻随机存取存储器（ReRAM）单元的半导体器件，其包括由掺杂的金属氧化物和/或氮化物形成的限流层。 这些限流层可具有至少约1欧姆 - 厘米的电阻率。 即使当这些层受到强电场和/或高温退火时，也保持该电阻率水平。 在一些实施例中，限流层的击穿电压可以为至少约8V。 这种电流限制层的一些实例包括掺杂有铌的氧化钛，掺杂有锑的氧化锡和掺杂有铝的氧化锌。 掺杂剂和基材可以作为单独的子层沉积，然后通过退火重新分布，或者可以使用反应溅射或共溅射共沉积。 层的高电阻率允许在保持其性能的同时缩小包括这些层的半导体器件的尺寸。

    Heat Stable SnAl and SnMg Based Dielectrics
    78.
    发明申请
    Heat Stable SnAl and SnMg Based Dielectrics 有权
    热稳定SnAl和SnMg基电介质

    公开(公告)号：US20130189526A1

    公开(公告)日：2013-07-25

    申请号：US13797606

    申请日：2013-03-12

    Applicant: Intermolecular Inc.

    Inventor： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Wen Sun

    IPC: H01B3/10

    CPC classification number: C03C17/366 ,  C03C17/2453 ,  C03C17/36 ,  C03C17/3618 ,  C03C17/3642 ,  C23C14/08 ,  C23C28/32 ,  C23C28/345 ,  H01B3/10

    Abstract: A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.

    Abstract translation: 包含锡，氧和铝或镁中的一种优选高于15重量％的铝或镁的透明电介质组合物相对于在高温过程下的外观和光学性质提供了比氧化锡更好的热稳定性。 例如，当在高于500℃的温度下进行热处理时，本发明透明电介质组合物的颜色变化和折射率显着小于具有相当厚度的氧化锡膜的变化。 透明电介质组合物可用于高透光率，低发射率涂层面板，提供热稳定性，使得涂层的光学和结构性能如可见透射率，IR反射率，微观形态特性，颜色外观和 涂层和加热处理产品的雾度特性。

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