公开(公告)号：US10229967B2

公开(公告)日：2019-03-12

申请号：US15639585

申请日：2017-06-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Bartlet H. Deprospo ,  Huai Huang ,  Christopher J. Penny ,  Michael Rizzolo

IPC: H01L49/02 ,  H01L23/522

Abstract: Capacitors and methods of forming the same include forming a gap in a dielectric layer underneath one or more conducting lines, such that the one or more conducting lines are suspended over the gap. A capacitor stack is deposited in the gap and on the conducting lines. Respective contacts are deposited on the conducting lines and on the capacitor stack.

公开(公告)号：US10211153B2

公开(公告)日：2019-02-19

申请号：US15251775

申请日：2016-08-30

Applicant: International Business Machines Corporation

Inventor： Benjamin D. Briggs ,  Elbert E. Huang ,  Raghuveer R. Patlolla ,  Cornelius Brown Peethala ,  David L. Rath ,  Chih-Chao Yang

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

Abstract: A low aspect ratio interconnect is provided and includes a metallization layer, a liner and a metallic interconnect. The metallization layer includes bottommost and uppermost surfaces. The uppermost surface has a maximum post-deposition height from the bottommost surface at first metallization layer portions. The metallization layer defines a trench at second metallization layer portions. The liner includes is disposed to line the trench and includes liner sidewalls that have terminal edges that extend to the maximum post-deposition height and lie coplanar with the uppermost surface at the first metallization layer portions. The metallic interconnect is disposed on the liner to fill a trench remainder and has an uppermost interconnect surface that extends to the maximum post-deposition height and lies coplanar with the uppermost surface at the first metallization layer portions.

公开(公告)号：US10195901B2

公开(公告)日：2019-02-05

申请号：US15681512

申请日：2017-08-21

Applicant: International Business Machines Corporation

Inventor： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Leigh Anne H. Clevenger ,  Jonathan H. Connell, II ,  Nalini K. Ratha ,  Michael Rizzolo

IPC: B60Q9/00 ,  B60C9/00 ,  B60W40/09 ,  B60W30/08

Abstract: Techniques are provided for alerting drivers of hazardous driving conditions using the sensing capabilities of wearable mobile technology. In one aspect, a method for alerting drivers of hazardous driving conditions includes the steps of: collecting real-time data from a driver of a vehicle, wherein the data is collected via a mobile device worn by the driver; determining whether the real-time data indicates that a hazardous driving condition exists; providing feedback to the driver if the real-time data indicates that a hazardous driving condition exists, and continuing to collect data from the driver in real-time if the real-time data indicates that a hazardous driving condition does not exist. The real-time data may also be collected and used to learn characteristics of the driver. These characteristics can be compared with the data being collected to help determine, in real-time, whether the driving behavior is normal and whether a hazardous driving condition exists.

公开(公告)号：US20190013278A1

公开(公告)日：2019-01-10

申请号：US16131553

申请日：2018-09-14

Applicant: International Business Machines Corporation

Inventor： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Nicholas A. Lanzillo ,  Takeshi Nogami ,  Christopher J. Penny ,  Michael Rizzolo

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: A semiconductor device is provided and includes first and second dielectrics, first and second conductive elements, a self-formed-barrier (SFB) and a liner. The first and second dielectrics are disposed with one of first-over-second dielectric layering and second-over-first dielectric layering. The first and second conductive elements are respectively suspended at least partially within a lower one of the first and second dielectrics and at least partially within the other one of the first and second dielectrics. The self-formed-barrier (SFB) is formed about a portion of one of the first and second conductive elements which is suspended in the second dielectric. The liner is deposited about a portion of the other one of the first and second conductive elements which is partially suspended in the first dielectric.

公开(公告)号：US10170416B2

公开(公告)日：2019-01-01

申请号：US15816414

申请日：2017-11-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Benjamin D. Briggs ,  Elbert Huang ,  Joe Lee ,  Christopher J. Penny

IPC: H01L29/06 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A method is presented for forming a semiconductor structure. The method includes depositing an insulating layer over a semiconductor substrate, etching the insulating layer to form trenches for receiving copper (Cu), selectively recessing the Cu at one or more of the trenches corresponding to circuit locations requiring electromigration (EM) short-length, and forming self-aligned conducting caps over the one or more trenches where the Cu has been selectively recessed. The conducting caps can be tantalum nitride (TaN) caps. The method further includes forming a via extending into each of the trenches for receiving Cu. Additionally, the via for trenches including recessed Cu extends to the self-aligned conducting cap, whereas the via for trenches including non-recessed Cu extends to a top surface of the Cu.

公开(公告)号：US20180366144A1

公开(公告)日：2018-12-20

申请号：US15822854

申请日：2017-11-27

Applicant: International Business Machines Corporation

Inventor： Maryam Ashoori ,  Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Leigh Anne H. Clevenger

IPC: G10L25/66 ,  G10L15/06 ,  G10L15/18 ,  G06F19/00 ,  G10L15/02 ,  G06N99/00

Abstract: Monitoring and analysis of a user's speech to detect symptoms of a mental health disorder by continuously monitoring a user's speech in real-time to generate audio data based, transcribing the audio data to text and analyzing the text of the audio data to determine a sentiment of the audio data is disclosed. A trained machine learning model may be applied to correlate the text and the determined sentiment to clinical information associated with symptoms of a mental health disorder to determine whether the symptoms are a symptom event. The initial determination may be transmitted to a second device to determine (and/or verify) whether or not the symptom event was falsely recognized. The trained machine learning model may be updated based on a response from the second device

公开(公告)号：US20180351596A1

公开(公告)日：2018-12-06

申请号：US15608437

申请日：2017-05-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Maryam Ashoori ,  Benjamin D. Briggs ,  Justin A. Canaperi ,  Lawrence A. Clevenger ,  Leigh Anne H. Clevenger ,  Michael Rizzolo ,  Spyridon Skordas

IPC: H04B1/3827 ,  G06K19/077 ,  G06Q20/32 ,  G07C9/00 ,  G07F7/10 ,  G06F21/35

CPC classification number: G06F21/35 ,  B01L2300/168 ,  G06F3/044 ,  G06F2203/04103 ,  G06K19/0723 ,  G06K19/07775

Abstract: A system for a touch screen interface that includes a coating including a plurality of a touch activated microchips; and a projector for projecting a light image onto the coating that is applied to a touch screen substrate. The system also includes an image calibrator that calibrates touch activated microchips in the coating to features of the light image projected onto the coating. The system further includes a receiver for receiving signal from the touch activated microchips when said feature of the light image is activated.

公开(公告)号：US20180349220A1

公开(公告)日：2018-12-06

申请号：US15614066

申请日：2017-06-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Leigh Anne H. Clevenger ,  Christopher J. Penny ,  Michael Rizzolo ,  Aldis G. Sipolins

IPC: G06F11/07 ,  G06T19/20 ,  H04N1/00

Abstract: Methods and systems for printing accurate three-dimensional structures include printing a three-dimensional structure according to an original three-dimensional model. The original three-dimensional model is adjusted to reduce measured differences between the printed three-dimensional structure and the original three-dimensional model. A three-dimensional structure is printed according to the adjusted three-dimensional model.

公开(公告)号：US20180323151A1

公开(公告)日：2018-11-08

申请号：US15808193

申请日：2017-11-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Benjamin D. Briggs ,  Cornelius B. Peethala ,  David L. Rath

IPC: H01L23/532 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/76883 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76853 ,  H01L21/76861 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76892 ,  H01L23/53238

Abstract: A method for forming a conductive structure for a semiconductor device includes depositing a barrier layer in a trench formed in a dielectric material and forming an interface layer over the barrier layer. A main conductor is formed over the interface layer, and the main conductor is recessed selectively to the interface layer and the barrier layer to a position below a top surface of the dielectric layer. The interface layer is selectively wet etched to the main conductor and the barrier layer using a chemical composition having an oxidizer, wherein the chemical composition is buffered to include a pH above 7. The barrier layer is selectively etching to the main conductor and the interface layer.

公开(公告)号：US20180277482A1

公开(公告)日：2018-09-27

申请号：US15811129

申请日：2017-11-13

Applicant: International Business Machines Corporation

Inventor： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Nicholas A. Lanzillo ,  Michael Rizzolo ,  Theodorus E. Standaert

IPC: H01L23/528 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L23/5283 ,  H01L21/02167 ,  H01L21/76816 ,  H01L21/76828 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76864 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295

Abstract: Methods are provided for fabricating metallic interconnect structures having reduced electrical resistivity that is obtained by applying mechanical strain to the metallic interconnect structures, as well as semiconductor structures having metallic interconnect structures formed with permanent mechanical strain to provide reduced electrical resistivity. For example, a method includes forming a metallic interconnect structure in an interlevel dielectric (ILD) layer of a back-end-of-line (BEOL) structure of a semiconductor structure, and forming a stress layer in contact with the metallic interconnect structure. A thermal anneal process is performed to cause the stress layer to expand and apply compressive strain to the metallic interconnect structure and permanently deform at least a portion of the metallic interconnect structure into a stress memorized state of compressive strain.