摘要:
The invented ink-jet printing method for the construction of thin film transistors using all SWNTs on flexible plastic films is a new process. This method is more practical than all of existing printing methods in the construction TFT and RFID tags because SWNTs have superior properties of both electrical and mechanical over organic conducting oligomers and polymers which often used for TFT. Furthermore, this method can be applied on thin films such as paper and plastic films while silicon based techniques can not used on such flexible films. These are superior to the traditional conducting polymers used in printable devices since they need no dopant and they are more stable. They could be used in conjunction with conducting polymers, or as stand-alone inks.
摘要:
This invention is generally related to a method of making a molecule-surface interface comprising at least one surface comprising at least one material and at least one organic group wherein the organic group is adjoined to the surface and the method comprises contacting at least one organic group precursor with at least one surface wherein the organic group precursor is capable of reacting with the surface in a manner sufficient to adjoin the organic group and the surface. The present invention is directed to hybrid molecular electronic devices having a molecule-surface interface. Such hybrid molecular electronic devices may advantageously have either a top or bottom gate electrode for modifying a conductivity of the devices.
摘要:
A method of reducing side effects of damage in a human subject exposed to radiation includes administering to the human subject carbon nanotubes in a pharmaceutically acceptable carrier after or prior to exposure to radiation. A composition for reducing radical damage includes a carbon nanotube which is functionalized (1) for substantial water solubility and (2) with a radical trapping agent appended to the carbon nanotube forming a radical scavenger-carbon nanotube conjugate.
摘要:
Methods for producing macroscopic quantities of oxidized graphene nanoribbons are disclosed herein. The methods include providing a plurality of carbon nanotubes and reacting the plurality of carbon nanotubes with at least one oxidant to form oxidized graphene nanoribbons. The at least one oxidant is operable to longitudinally open the carbon nanotubes. In some embodiments, the reacting step takes place in the presence of at least one acid. In some embodiments, the reacting step takes place in the presence of at least one protective agent. Various embodiments of the present disclosure also include methods for producing reduced graphene nanoribbons by reacting oxidized graphene nanoribbons with at least one reducing agent. Oxidized graphene nanoribbons, reduced graphene nanoribbons and compositions and articles derived therefrom are also disclosed herein.
摘要:
This invention is generally related to a method of making a molecule-surface interface comprising at least one surface comprising at least one material and at least one organic group wherein the organic group is adjoined to the surface and the method comprises contacting at least one organic group precursor with at least one surface wherein the organic group precursor is capable of reacting with the surface in a manner sufficient to adjoin the organic group and the surface.
摘要:
In some embodiments, the present invention relates to new processes to simultaneously shorten and functionalize raw or purified carbon nanotubes to improve their dispersity and processibility, and the short functionalized nanotubes that may be made by the processes. This present invention also relates to new compositions of matter using short functionalized carbon nanotubes with thermoset, thermoplastic polymers, high temperature polymers, and other materials; the processes for making such composite materials; and the products of said processes.
摘要:
A hybrid molecular electronic device having switching, memory, and sensor application is disclosed. In one embodiment, the device resembles a conventional field-effect transistor (FET) formed on a silicon-on-insulator (SOI) substrate. Source and drain doped regions are formed in an upper surface of the SOI substrate, and a metallization layer which can serve as a gate contact is formed on a lower surface of the SOI substrate. A channel region spanning between the doped source and drain regions is left exposed, in order that a monolayer of molecules may be formed therein. Upon application of appropriate gating voltages to the gate contact, conduction between the source and drain regions can be modulated, possibly as a result of the reduction and oxidation of the molecules grafted to the gate region.
摘要:
The present invention is directed towards processes for covalently attaching molecular wires and molecular electronic devices to carbon nanotubes and compositions thereof. Such processes utilize diazonium chemistry to bring about this marriage of wire-like nanotubes with molecular wires and molecular electronic devices.
摘要:
Embodiments of the present disclosure pertain to an electrode that includes: a porous carbon material; a metal (e.g., Li) associated with the porous carbon material; and a conductive additive (e.g., graphene nanoribbons) associated with the porous carbon material. The metal may be in the form of a non-dendritic or non-mossy coating on a surface of the porous carbon material. The electrodes may also be associated with a substrate, such as a copper foil. The electrodes may be utilized as anodes or cathodes in energy storage devices, such as lithium ion batteries. Additional embodiments pertain to energy storage devices that contain the electrodes of the present disclosure. Further embodiments pertain to methods of making the electrodes by associating porous carbon materials with a conductive additive, a metal, and optionally a substrate. The electrode may then be incorporated as a component of an energy storage device.
摘要:
A nanoporous (NP) memory may include a non-porous layer and a nanoporous layer sandwiched between the bottom and top electrodes. The memory may be free of diodes, selectors, and/or transistors that may be necessary in other memories to mitigate crosstalk. The nanoporous material of the nanoporous layer may be a metal oxide, metal chalcogenide, or a combination thereof. Further, the memory may lack any additional components. Further, the memory may be free from requiring an electroformation process to allow switching between ON/OFF states.