Chip carrier
    71.
    发明授权
    Chip carrier 失效
    芯片载体

    公开(公告)号:US4782381A

    公开(公告)日:1988-11-01

    申请号:US062005

    申请日:1987-06-12

    摘要: A chip carrier for carrying integrated circuit chips is provided. Instead of placing individual circuit components either in the chips or next to them, the components are placed in or near the substrate of the chip carrier. This frees up expensive real-estate for logic chips at the chip level presently occupied by the components. The substrate of the carrier acts as a large heat sink to dissipate power generated by the components.

    摘要翻译: 提供了用于承载集成电路芯片的芯片载体。 代替将单独的电路组件放置在芯片中或其旁边,将组件放置在芯片载体的衬底中或附近。 这可以在目前由组件占用的芯片级别上释放昂贵的逻辑芯片。 载体的基板用作大的散热器,以消散由部件产生的电力。

    Capacitance detector for accelerometer and gyroscope and accelerometer and gyroscope with capacitance detector
    72.
    发明授权
    Capacitance detector for accelerometer and gyroscope and accelerometer and gyroscope with capacitance detector 有权
    用于加速度计和陀螺仪的电容检测器,带电容检测器的加速度计和陀螺仪

    公开(公告)号:US09069005B2

    公开(公告)日:2015-06-30

    申请号:US13162883

    申请日:2011-06-17

    申请人: Richard C. Ruby

    发明人: Richard C. Ruby

    摘要: A capacitance-to-frequency converter is configured to convert a difference between first and second capacitances produced of a teeter-totter capacitive transducer as a result of a rotational force being applied to the teeter-totter capacitive transducer to a first signal having a first frequency that is a function of the rotational force, and to convert a sum of the first and second capacitances produced as a result of an acceleration force to a second signal having a second frequency that is a function of the acceleration force. The capacitance-to-frequency converter includes a first oscillator having a first oscillator frequency that changes in response to a change in the first capacitance; a second oscillator having a second oscillator frequency that changes in response to a change in the second capacitance; and a mixer having first and second mixer inputs connected outputs of the first and second oscillators.

    摘要翻译: 电容 - 频率转换器被配置为转换由跷跷板电容式换能器产生的第一和第二电容之间的差异,这是由于旋转力被施加到跷跷板电容换能器而具有第一频率的第一信号 这是旋转力的函数,并且将作为加速力的结果产生的第一和第二电容的和转换成具有作为加速力的函数的第二频率的第二信号。 电容 - 频率转换器包括具有响应于第一电容的变化而改变的第一振荡器频率的第一振荡器; 具有响应于所述第二电容的变化而改变的第二振荡器频率的第二振荡器; 以及具有连接第一和第二振荡器的输出的第一和第二混频器输入的混频器。

    TEMPERATURE CONTROLLED ACOUSTIC RESONATOR

    公开(公告)号:US20130194057A1

    公开(公告)日:2013-08-01

    申请号:US13361724

    申请日:2012-01-30

    申请人: Richard C. Ruby

    发明人: Richard C. Ruby

    IPC分类号: H03H9/54

    摘要: An acoustic resonator device includes an annular acoustic resonator, a heater coil and a heat sensor. The annular acoustic resonator is positioned over a trench formed in a substrate of the acoustic resonator device. The heater coil is disposed around a perimeter of the annular acoustic resonator, the heater coil including a resistor configured to receive a heater current. The heat sensor is configured to adjust the heater current in response to a temperature of the heater coil.

    Resonator device including electrode with buried temperature compensating layer
    74.
    发明授权
    Resonator device including electrode with buried temperature compensating layer 有权
    谐振器器件包括具有埋入温度补偿层的电极

    公开(公告)号:US08436516B2

    公开(公告)日:2013-05-07

    申请号:US13404095

    申请日:2012-02-24

    IPC分类号: H01L41/08

    摘要: An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.

    摘要翻译: 声谐振器装置包括在基板上的复合第一电极,复合电极上的压电层和压电层上的第二电极。 第一电极包括具有正温度系数的掩埋温度补偿层。 压电层具有负温度系数,因此温度补偿层的正温度系数抵消压电层的负温度系数的至少一部分。

    Bulk acoustic resonator electrical impedance transformers
    75.
    发明授权
    Bulk acoustic resonator electrical impedance transformers 有权
    体积谐振器电阻抗变压器

    公开(公告)号:US07855618B2

    公开(公告)日:2010-12-21

    申请号:US12112633

    申请日:2008-04-30

    IPC分类号: H03H9/00 H03H9/15

    摘要: An electrical impedance transformer comprises a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency. The electrical impedance transformer also comprises: a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR. The electrical impedance transformer also includes a decoupling layer disposed between the first and the second FBARs. The first electrical impedance differs from the second electrical impedance and the first and second resonance frequencies are substantially the same.

    摘要翻译: 电阻抗变压器包括具有第一电阻抗和第一谐振频率的第一膜体声波谐振器(FBAR)。 电阻抗变压器还包括:第二FBAR,具有第二电阻抗和第二谐振频率,并且设置在第一FBAR上。 电阻抗变压器还包括设置在第一和第二FBAR之间的去耦层。 第一电阻抗与第二电阻抗不同,第一和第二谐振频率基本上相同。

    HBAR oscillator and method of manufacture
    76.
    发明授权
    HBAR oscillator and method of manufacture 有权
    HBAR振荡器及其制造方法

    公开(公告)号:US07508286B2

    公开(公告)日:2009-03-24

    申请号:US11540413

    申请日:2006-09-28

    IPC分类号: H03H9/00

    CPC分类号: H03H3/04 H03H9/105 H03H9/605

    摘要: An oscillator comprises a substrate and a high tone bulk acoustic resonator (HBAR), which includes a portion of the substrate. The oscillator also comprises a film bulk acoustic resonator (FBAR) filter disposed over the substrate. The filter comprises a plurality of FBAR devices. The oscillator also comprises a plurality of acoustic isolators disposed in the substrate, wherein one of the isolators is disposed beneath each of the FBAR devices. A method of fabricating an oscillator is also disclosed.

    摘要翻译: 振荡器包括衬底和高音量体声波谐振器(HBAR),其包括衬底的一部分。 振荡器还包括设置在衬底上的膜体声波谐振器(FBAR)滤波器。 滤波器包括多个FBAR装置。 振荡器还包括设置在基板中的多个隔声器,其中一个隔离器设​​置在每个FBAR装置的下方。 还公开了一种制造振荡器的方法。

    Film deposition to enhance sealing yield of microcap wafer-level package with vias
    80.
    发明授权
    Film deposition to enhance sealing yield of microcap wafer-level package with vias 失效
    薄膜沉积,以提高具有通孔的微型晶圆级封装的密封产量

    公开(公告)号:US06777263B1

    公开(公告)日:2004-08-17

    申请号:US10647040

    申请日:2003-08-21

    IPC分类号: H01L2144

    CPC分类号: B81C1/00269 H01L21/50

    摘要: A method for forming a wafer package includes forming a die structure, wherein the die structure includes a first wafer, a device mounted on the first wafer, a second wafer mounted atop the first wafer with a first seal ring around the device and a second seal ring around a via contact. The method further includes forming a trench in the second wafer around the first seal ring, filling the trench and the via contact with a sealing agent, patterning a topside of the second wafer to removed the excessive sealing agent and to expose a contact pad of the via contact, and singulating a die around the first seal ring.

    摘要翻译: 一种用于形成晶片封装的方法,包括形成管芯结构,其中管芯结构包括第一晶片,安装在第一晶片上的器件,安装在第一晶片顶部的第二晶片,具有围绕器件的第一密封环,第二密封 环绕通道接触。 所述方法还包括在所述第二晶片周围形成沟槽,围绕所述第一密封环,用密封剂填充所述沟槽和所述通孔接触,图案化所述第二晶片的顶侧以除去所述过量的密封剂并露出所述第二晶片的接触垫 通过接触,并且围绕第一密封环分开模具。