Film deposition to enhance sealing yield of microcap wafer-level package with vias
    2.
    发明授权
    Film deposition to enhance sealing yield of microcap wafer-level package with vias 失效
    薄膜沉积,以提高具有通孔的微型晶圆级封装的密封产量

    公开(公告)号:US06777263B1

    公开(公告)日:2004-08-17

    申请号:US10647040

    申请日:2003-08-21

    IPC分类号: H01L2144

    CPC分类号: B81C1/00269 H01L21/50

    摘要: A method for forming a wafer package includes forming a die structure, wherein the die structure includes a first wafer, a device mounted on the first wafer, a second wafer mounted atop the first wafer with a first seal ring around the device and a second seal ring around a via contact. The method further includes forming a trench in the second wafer around the first seal ring, filling the trench and the via contact with a sealing agent, patterning a topside of the second wafer to removed the excessive sealing agent and to expose a contact pad of the via contact, and singulating a die around the first seal ring.

    摘要翻译: 一种用于形成晶片封装的方法,包括形成管芯结构,其中管芯结构包括第一晶片,安装在第一晶片上的器件,安装在第一晶片顶部的第二晶片,具有围绕器件的第一密封环,第二密封 环绕通道接触。 所述方法还包括在所述第二晶片周围形成沟槽,围绕所述第一密封环,用密封剂填充所述沟槽和所述通孔接触,图案化所述第二晶片的顶侧以除去所述过量的密封剂并露出所述第二晶片的接触垫 通过接触,并且围绕第一密封环分开模具。

    Bonded wafer structure and method of fabrication
    3.
    发明授权
    Bonded wafer structure and method of fabrication 失效
    粘合晶片结构和制造方法

    公开(公告)号:US08102044B2

    公开(公告)日:2012-01-24

    申请号:US12254536

    申请日:2008-10-20

    IPC分类号: H01L23/12 H01L21/00

    摘要: A method of packaging electronics comprises providing a first wafer and providing a second wafer. The method also comprises depositing a polymer material over a surface of the first wafer; and selectively removing a portion of the polymer from the first wafer to create a void in the polymer. The method also comprises placing the first wafer over the second wafer and in contact with the polymer; and curing the polymer to bond the first wafer to the second wafer. A bonded wafer structure is also described.

    摘要翻译: 包装电子器件的方法包括提供第一晶片并提供第二晶片。 该方法还包括在第一晶片的表面上沉积聚合物材料; 并且从第一晶片选择性地去除聚合物的一部分以在聚合物中产生空隙。 该方法还包括将第一晶片放置在第二晶片上并与聚合物接触; 并固化聚合物以将第一晶片结合到第二晶片。 还描述了接合晶片结构。

    Microcap wafer-level package
    6.
    发明授权
    Microcap wafer-level package 有权
    微型晶圆级封装

    公开(公告)号:US06265246B1

    公开(公告)日:2001-07-24

    申请号:US09359844

    申请日:1999-07-23

    IPC分类号: H01L2144

    摘要: A microcap wafer-level package is provided in which a micro device is connected to bonding pads on a base wafer. A peripheral pad on the base wafer encompasses the bonding pads and the micro device. A cap wafer has gaskets formed thereon using a thick photoresist, semiconductor photolithographic process. Bonding pad gaskets match the perimeters of the bonding pads and a peripheral pad gasket matches the peripheral pad on the base wafer. Wells are located inside the perimeters of the bond pad gaskets and are formed to a predetermined depth in the cap wafer. The cap wafer is then placed over the base wafer to cold weld bond the gaskets to the pads and form a hermetically sealed volume between the bonding pad gaskets and the peripheral pad gasket. The cap wafer is then thinned below the predetermined depth until the wells become through holes that provide access to the bonding pads inside the package, but outside the hermetically sealed volume, for connecting wires from a micro device utilizing system.

    摘要翻译: 提供了一种微型晶片级封装,其中微型器件连接到基片上的焊盘。 基底晶片上的外围焊盘包围接合焊盘和微型器件。 盖晶片使用厚的光致抗蚀剂,半导体光刻工艺在其上形成垫圈。 接合垫垫片与焊盘的周长相匹配,外围衬垫垫片与基底晶片上的外围焊盘相匹配。 孔位于接合垫垫片的周边内,并且形成在盖晶片中的预定深度。 然后将盖晶片放置在基底晶片上,以将焊垫冷却焊接到焊盘,并在焊盘垫片和外围焊盘垫圈之间形成气密密封的体积。 然后将盖晶片减薄到预定深度以下,直到阱变成通孔,其提供对封装内的接合焊盘的访问,但是在气密密封的体积外部,用于从微器件利用系统连接引线。

    Microcap wafer-level package
    7.
    发明授权

    公开(公告)号:US06429511B2

    公开(公告)日:2002-08-06

    申请号:US09969432

    申请日:2001-10-01

    IPC分类号: H01L2348

    摘要: A microcap wafer-level package is provided in which a micro device is connected to bonding pads on a base wafer. A peripheral pad on the base wafer encompasses the bonding pads and the micro device. A cap wafer has gaskets formed thereon using a thick photoresist semiconductor photolithographic process. Bonding pad gaskets match the perimeters of the bonding pads and a peripheral pad gasket matches the peripheral pad on the base wafer. Wells are located inside the perimeters of the bond pad gaskets and are formed to a predetermined depth in the cap wafer. The cap wafer is then placed over the base wafer to cold weld bond the gaskets to the pads and form a hermetically sealed volume between the bonding pad gaskets and the peripheral pad gasket. The cap wafer is then thinned below the predetermined depth until the wells become through holes that provide access to the bonding pads inside the package, but outside the hermetically sealed volume, for connecting wires from a micro device utilizing system.

    Microcap wafer-level package
    8.
    发明授权
    Microcap wafer-level package 失效
    微型晶圆级封装

    公开(公告)号:US06376280B1

    公开(公告)日:2002-04-23

    申请号:US09415284

    申请日:1999-10-08

    IPC分类号: H01L2144

    摘要: A microcap wafer-level package is provided in which a micro device is connected to bonding pads on a base wafer. A peripheral pad on the base wafer encompasses the bonding pads and the micro device. A cap wafer has gaskets formed thereon using a thick photoresist semiconductor photolithographic process. Bonding pad gaskets match the perimeters of the bonding pads and a peripheral pad gasket matches the peripheral pad on the base wafer. Wells are located inside the perimeters of the bond pad gaskets and are formed to a predetermined depth in the cap wafer. The cap wafer is then placed over the base wafer to cold weld bond the gaskets to the pads and form a hermetically sealed volume between the bonding pad gaskets and the peripheral pad gasket. The cap wafer is then thinned below the predetermined depth until the wells become through holes that provide access to the bonding pads inside the package, but outside the hermetically sealed volume, for connecting wires from a micro device utilizing system.

    摘要翻译: 提供了一种微型晶片级封装,其中微型器件连接到基片上的焊盘。 基底晶片上的外围焊盘包围接合焊盘和微型器件。 盖晶片使用厚的光致抗蚀剂半导体光刻工艺在其上形成垫圈。 接合垫垫片与焊盘的周长相匹配,外围衬垫垫片与基底晶片上的外围焊盘相匹配。 孔位于接合垫垫片的周边内,并且形成在盖晶片中的预定深度。 然后将盖晶片放置在基底晶片上,以将焊盘冷却焊接到焊盘,并在焊盘垫片和外围焊盘垫圈之间形成气密密封的体积。 然后将盖晶片减薄到预定深度以下,直到阱变成通孔,其提供对封装内的接合焊盘的访问,但是在气密密封的体积外部,用于从微器件利用系统连接导线。