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    Fiber delivered laser induced white light system
    71.
    发明授权
    Fiber delivered laser induced white light system 有权

    公开(公告)号：US11594862B2

    公开(公告)日：2023-02-28

    申请号：US17563986

    申请日：2021-12-28

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Oscar Romero ,  Jim Harrison ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Daming Liu

    IPC: F21S41/176 ,  F21S41/16 ,  F21S41/24 ,  F21Y115/30 ,  H01S5/40 ,  H01S5/042 ,  H01S5/323 ,  H01S5/02251 ,  H01S5/02253 ,  H01S5/02326 ,  H01S5/00

    Abstract: The present disclosure provides an apparatus for generating fiber delivered laser-induced white light. The apparatus includes a package case enclosing a board member with an electrical connector through a cover member and a laser module configured to the board member inside the package case. The laser module comprises a support member, at least one laser diode device configured to emit a laser light of a first wavelength, a set of optics to guide the laser light towards an output port. Additionally, the apparatus includes a fiber assembly configured to receive the laser light from the output port for further delivering to a light head member disposed in a remote destination. A phosphor material disposed in the light head member receives the laser light exited from the fiber assembly to induce a phosphor emission of a second wavelength for producing a white light emission substantially reflected therefrom for various applications.

    MANUFACTURABLE LASER DIODES ON A LARGE AREA GALLIUM AND NITROGEN CONTAINING SUBSTRATE
    75.
    发明申请
    MANUFACTURABLE LASER DIODES ON A LARGE AREA GALLIUM AND NITROGEN CONTAINING SUBSTRATE 有权

    公开(公告)号：US20220181841A1

    公开(公告)日：2022-06-09

    申请号：US17552261

    申请日：2021-12-15

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Melvin McLaurin ,  James W. Raring

    IPC: H01S5/02 ,  H01S5/343

    Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL
    77.
    发明申请
    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL 有权

    公开(公告)号：US20220006256A1

    公开(公告)日：2022-01-06

    申请号：US17377835

    申请日：2021-07-16

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

    IPC: H01S5/02 ,  H01S5/343 ,  H01S5/32 ,  H01S5/0234

    Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

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