摘要:
A method and an apparatus for forming a structure on a component made of a material composed of silicon oxide, especially of silicate glass, glass ceramic or quartz, wherein in accordance with the process at least a first surface of the component a partial removal of the material by plasma etching takes place and during the plasma etching at least at the surface to be etched a substrate temperature is established which is substantially greater than 90° C. but less than the softening temperature of the material. The apparatus is equipped for this purpose with a heater for generating the substrate temperature.
摘要:
In sophisticated metallization systems, vertical contacts and metal lines may be formed on the basis of a dual inlaid strategy, wherein an edge rounding or corner rounding may be applied to the trench hard mask prior to forming the via openings on the basis of a self-aligned via trench concept. Consequently, self-aligned interconnect structures may be obtained, while at the same time providing superior fill conditions during the deposition of barrier materials and conductive fill materials.
摘要:
In a sophisticated metallization system, self-aligned air gaps may be provided in a locally selective manner by using a radiation sensitive material for filling recesses or for forming therein the metal regions. Consequently, upon selectively exposing the radiation sensitive material, a selective removal of exposed or non-exposed portions may be accomplished, thereby resulting in a highly efficient overall manufacturing flow.
摘要:
By forming a hardmask layer in combination with one or more cap layers, undue exposure of a sensitive dielectric material to resist stripping etch ambients may be reduced and integrity of the hardmask may also be maintained so that the trench etch process may be performed with a high degree of etch selectivity during the patterning of openings in a metallization layer of a semiconductor device.
摘要:
Intelligent Electronic Devices (IEDs) for Substation Automation (SA), such as bay units or substation PCs, are equipped with a Central Processing Unit CPU that includes a first processing core dedicated and configured to execute Protection and Control applications, and a second processing core, or network core, dedicated and configured to handle or decode network communication traffic. The network core performs computationally expensive pre-processing and/or post-processing functionality on top of the 9-2 communication stack. A plurality of network cores or a plurality of network interfaces may be provided to cope with the expected amount of IEC 61850 9-2 traffic.
摘要:
An entity to be validated for consistency is loaded into the buffer of the consistency service, a signal to verify the existence of a specific data set of an IT system is then sent by the consistency service to the IT system holding the entity to be validated for consistency, and the consistency validating information is stored in the output means, said consistency validating information depending on the signal being sent back to the consistency service.The consistency of data stored in various IT systems is checked prior to attempting to access it. Errors by calling a service or functionality that would require access to data that is not available or that is inconsistent can therefore be avoided.
摘要:
In a sophisticated metallization system of a semiconductor device, air gaps may be formed in a self-aligned manner on the basis of a sacrificial material, such as a carbon material, which is deposited after the patterning of a dielectric material for forming therein a via opening. Consequently, superior process conditions during the patterning of the via opening and the sacrificial material in combination with a high degree of flexibility in selecting appropriate materials for the dielectric layer and the sacrificial layer may provide superior uniformity and device characteristics.
摘要:
In a sophisticated metallization system, enhanced electromigration behavior may be accomplished by incorporating electromigration barriers into metal lines after a given distance, which may be accomplished by providing an increased width in order to obtain an enhanced average grain size in the intermediate metal regions of increased lateral width. Consequently, the electromigration induced material diffusion may encounter an overall increased grain size along the entire depth of the metal lines, thereby resulting in a significantly reduced electromigration effect and thus enhanced reliability of the critical metal lines.
摘要:
By forming a hardmask layer in combination with one or more cap layers, undue exposure of a sensitive dielectric material to resist stripping etch ambients may be reduced and integrity of the hardmask may also be maintained so that the trench etch process may be performed with a high degree of etch selectivity during the patterning of openings in a metallization layer of a semiconductor device.
摘要:
A method and computer-based system for retrieving, accessing and storing data otherwise stored in a plurality of IT systems arranged for operating a part of one or more electrical power networks. The method and computer-based system provide integration of otherwise separate systems such as GIS, SCADA, ERP and/or CMMS. The integration includes an XML/CIM layer for data exchange and a virtual asset register containing references to objects representing assets in the power networks. A human-machine interface and a computer program for carrying out the method.