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公开(公告)号：US5989670A
公开(公告)日：1999-11-23
申请号：US86276
申请日：1998-05-28
CPC分类号： G11B7/242 , G11B7/127 , G11B7/24 , G11B7/24038 , G11B7/244 , G11B7/257 , G11B7/258 , G11B2007/2571 , G11B2007/25713 , G11B7/005 , G11B7/08511 , G11B7/2531 , G11B7/2534 , G11B7/2542 , G11B7/2578 , G11B7/2585 , Y10S428/913 , Y10S430/146 , Y10T428/21 , Y10T428/31678
摘要： A multilayer optical disk having an information storage layer which can as well as be reproduced by a general purpose reproducing apparatus, for example, a compact disk player, and from which information can be read from other information storage layers by using an exclusive reproducing apparatus. The multilayer disk has a first substrate on which is formed a first information storage layer which is relatively highly reflective with respect to a light beam having a wavelength of 770-830 nm; and a second substrate on which is formed a second information layer which is relatively transparent with respect to a light beam having a first substrate on which is formed a wavelength of 770 mn to 830 nm but which is sufficiently reflective with respect to a light beam having a wavelength of 615-655 nm.
摘要翻译： 具有信息存储层的多层光盘，其可以由通用再现装置（例如，光盘播放器）再现，并且可以通过使用专用再现装置从其它信息存储层读取信息。 多层盘具有第一基板，在其上形成有相对于波长为770-830nm的光束相对高反射的第一信息存储层; 和第二基板，其上形成有相对于具有第一基板的光束相对透明的第二信息层，其上形成有770nm至830nm的波长，但是相对于具有 波长615-655nm。
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公开(公告)号：US5357494A
公开(公告)日：1994-10-18
申请号：US175693
申请日：1993-12-30
申请人： Katsuhisa Aratani
发明人： Katsuhisa Aratani
IPC分类号： G11B11/10 , G11B11/105 , G11B11/12 , G11B13/04
CPC分类号： G11B11/10586 , G11B11/10515
摘要： A magneto-optical playback method employing a magneto-optical recording medium having a playback magnetic layer, a recording magnetic layer, a transparent dielectric layer and a reflecting layer. The playback magnetic layer is so formed that its playback output R.times..theta..sub.k (in which R and .theta..sub.k represent the reflectivity and the Kerr rotation angle of the recording medium, respectively) is sufficiently small at any point lower than a threshold temperature T.sub.th at which the magnetization thereof is inverted. According to this method, a playback output is obtained by inverting the magnetization of merely the playback magnetic layer alone in a playback mode, thereby achieving ultrahigh-density recording with enhanced linear density (recording density on record tracks) and transverse-to-track density while improving the playback signal-to-noise ratio.
摘要翻译： 采用具有回放磁性层的磁光记录介质，记录磁性层，透明电介质层和反射层的磁光回放方法。 重放磁性层被形成为使得其重放输出Rxθk（其中R和theta k分别表示记录介质的反射率和克尔旋转角度）分别在低于阈值温度Tth的任何点都足够小， 其磁化反转。 根据这种方法，通过在再现模式中仅仅使重放磁性层的磁化反转来获得重放输出，由此实现具有增强的线密度（记录磁道上的记录密度）和横向磁道密度的超高密度记录 同时提高播放信噪比。
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公开(公告)号：US08680502B2
公开(公告)日：2014-03-25
申请号：US13197814
申请日：2011-08-04
申请人： Minoru Ikarashi , Katsuhisa Aratani
发明人： Minoru Ikarashi , Katsuhisa Aratani
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/144
摘要： A memory device includes: first and second electrodes; a semiconductor layer of a first conduction type provided on the first electrode side; a solid electrolyte layer containing movable ions and provided on the second electrode side; and an amorphous semiconductor layer of a second conduction type which is provided between the semiconductor layer and the solid electrolyte layer so as to be in contact with the solid electrolyte layer and, at the time of application of voltage to the first and second electrodes, reversibly changes to the first conduction type.
摘要翻译： 存储器件包括：第一和第二电极; 设置在第一电极侧的第一导电类型的半导体层; 含有可动离子的固体电解质层，设置在第二电极侧; 以及设置在半导体层和固体电解质层之间以与固体电解质层接触的第二导电类型的非晶半导体层，并且在向第一和第二电极施加电压时可逆地 改变为第一导电类型。
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公开(公告)号：US08659000B2
公开(公告)日：2014-02-25
申请号：US13197805
申请日：2011-08-04
申请人： Minoru Ikarashi , Katsuhisa Aratani
发明人： Minoru Ikarashi , Katsuhisa Aratani
CPC分类号： G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C2213/15 , G11C2213/51 , G11C2213/53 , H01L29/685
摘要： A memory device includes: an amorphous semiconductor layer of a first conduction type; a solid electrolyte layer containing movable ions and provided in contact with a part of one of faces of the amorphous semiconductor layer; a first electrode electrically connected to the amorphous semiconductor layer via the solid electrolyte layer; a second electrode electrically connected to one of the faces of the amorphous semiconductor layer; and a third electrode provided over the other face of the amorphous semiconductor layer with an insulating layer therebetween. At the time of application of voltage to the third electrode, at least a part of the amorphous semiconductor layer reversibly changes to a second conduction type.
摘要翻译： 存储器件包括：第一导电类型的非晶半导体层; 含有可动离子的固体电解质层，与所述非晶半导体层的一个面的一部分接触地设置; 经由所述固体电解质层与所述非晶半导体层电连接的第一电极; 电连接到所述非晶半导体层的一个面的第二电极; 以及在所述非晶半导体层的另一面上设置有绝缘层的第三电极。 在向第三电极施加电压时，非晶半导体层的至少一部分可逆地变为第二导电类型。
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公开(公告)号：US08295074B2
公开(公告)日：2012-10-23
申请号：US12742538
申请日：2008-11-27
CPC分类号： G11C13/0004 , G11C13/00 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146
摘要： A memory cell is provided, in which a resistance value is appropriately controlled, thereby a variable resistance element may be applied with a voltage necessary for changing the element into a high or low resistance state. A storage element 10, a nonlinear resistance element 20, and an MOS transistor 30 are electrically connected in series. The storage element 10 has a nonlinear current-voltage characteristic opposite to a nonlinear current-voltage characteristic of the MOS transistor 30, and changes into a high or low resistance state in accordance with a polarity of applied voltage. The nonlinear resistance element 20 has a nonlinear current-voltage characteristic similar to the nonlinear current-voltage characteristic of the storage element 10.
摘要翻译： 提供了一种存储单元，其中电阻值被适当地控制，由此可以向可变电阻元件施加将元件改变为高电阻或低电阻状态所需的电压。 存储元件10，非线性电阻元件20和MOS晶体管30串联电连接。 存储元件10具有与MOS晶体管30的非线性电流 - 电压特性相反的非线性电流 - 电压特性，并且根据施加电压的极性而变为高电阻或低电阻状态。 非线性电阻元件20具有类似于存储元件10的非线性电流 - 电压特性的非线性电流 - 电压特性。
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公开(公告)号：US20120037872A1
公开(公告)日：2012-02-16
申请号：US13197805
申请日：2011-08-04
申请人： Minoru Ikarashi , Katsuhisa Aratani
发明人： Minoru Ikarashi , Katsuhisa Aratani
IPC分类号： H01L45/00
CPC分类号： G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C2213/15 , G11C2213/51 , G11C2213/53 , H01L29/685
摘要： A memory device includes: an amorphous semiconductor layer of a first conduction type; a solid electrolyte layer containing movable ions and provided in contact with a part of one of faces of the amorphous semiconductor layer; a first electrode electrically connected to the amorphous semiconductor layer via the solid electrolyte layer; a second electrode electrically connected to one of the faces of the amorphous semiconductor layer; and a third electrode provided over the other face of the amorphous semiconductor layer with an insulating layer therebetween. At the time of application of voltage to the third electrode, at least a part of the amorphous semiconductor layer reversibly changes to a second conduction type.
摘要翻译： 存储器件包括：第一导电类型的非晶半导体层; 含有可动离子的固体电解质层，与所述非晶半导体层的一个面的一部分接触地设置; 经由所述固体电解质层与所述非晶半导体层电连接的第一电极; 电连接到所述非晶半导体层的一个面的第二电极; 以及在所述非晶半导体层的另一面上设置有绝缘层的第三电极。 在向第三电极施加电压时，非晶半导体层的至少一部分可逆地变为第二导电类型。
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公开(公告)号：US20110140065A1
公开(公告)日：2011-06-16
申请号：US12957978
申请日：2010-12-01
申请人： Akihiro Maesaka , Kazuhiro Ohba , Tetsuya Mizuguchi , Koji Miyata , Motonari Honda , Katsuhisa Aratani
发明人： Akihiro Maesaka , Kazuhiro Ohba , Tetsuya Mizuguchi , Koji Miyata , Motonari Honda , Katsuhisa Aratani
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , H01L27/2436 , H01L27/2472 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1608
摘要： The present invention provides a memory element and a memory device realizing reduced variations in resistance values in an initial state or erase state of a plurality of memory elements and capable of retaining the resistance value in a write/erase state for writing/erasing operations of a plurality of times. The memory element includes a first electrode, a memory layer, and a second electrode in order. The memory layer has: an ion source layer containing at least one of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and at least one metal element selected from copper (Cu), silver (Ag), zinc (Zn), and zirconium (Zr); and two or more high-resistance layers having a resistance value higher than that of the ion source layer and having different compositions.
摘要翻译： 本发明提供了一种存储元件和存储器件，其实现了多个存储元件的初始状态或擦除状态下的电阻值的变化，并且能够将电阻值保持在写入/擦除状态以用于写入/擦除操作 多次。 存储元件按顺序包括第一电极，存储层和第二电极。 存储层具有：包含碲（Te），硫（S）和硒（Se）的至少一种硫属元素的离子源层和至少一种选自铜（Cu），银（Ag）， 锌（Zn）和锆（Zr）; 以及具有比离子源层的电阻值高的电阻值并且具有不同组成的两个或更多个高电阻层。
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公开(公告)号：US20110073825A1
公开(公告)日：2011-03-31
申请号：US12961088
申请日：2010-12-06
IPC分类号： H01L45/00
CPC分类号： G11C13/0011 , G11C13/0007 , G11C2213/11 , G11C2213/15 , G11C2213/33 , G11C2213/34 , G11C2213/56 , G11C2213/72 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory device 10 having an arrangement in which a memory thin film is sandwiched between first and second electrodes, the memory thin film contains at least rare earth elements, the memory thin film 4 or a layer in contact with the memory thin film contains any one of elements selected from Cu, Ag, Zn and the memory thin film or the layer in contact with the memory thin film contains any one of elements selected from Te, S, Se.
摘要翻译： 具有这样一种结构的存储器件10，其中存储薄膜夹在第一和第二电极之间，存储薄膜至少含有稀土元素，存储薄膜4或与存储薄膜接触的层包含任何一种 选自Cu，Ag，Zn和记忆薄膜的元素或与记忆薄膜接触的层包含选自Te，S，Se中的任何一种元素。
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公开(公告)号：US20100135060A1
公开(公告)日：2010-06-03
申请号：US12703247
申请日：2010-02-10
CPC分类号： G11C13/0011 , G11C13/0007 , G11C2213/11 , G11C2213/15 , G11C2213/33 , G11C2213/34 , G11C2213/56 , G11C2213/72 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the memory thin film 4 or a layer 3 in contact with the memory thin film 4 contains any one of elements selected from Cu, Ag, Zn and the memory thin film 4 or the layer 3 in contact with the memory thin film 4 contains any one of elements selected from Te, S, Se. The memory device can record and read information with ease stably, and this memory device can be manufactured easily by a relatively simple manufacturing method.
摘要翻译： 记忆装置10具有这样的结构，其中存储薄膜4夹在第一和第二电极2和6之间，记忆薄膜6至少含有稀土元素，记忆薄膜4或与 记忆薄膜4包含选自Cu，Ag，Zn和记忆薄膜4中的任一种元素，或者与存储薄膜4接触的层3包含选自Te，S，Se中的任何一种元素。 存储装置可以容易地稳定地记录和读取信息，并且可以通过相对简单的制造方法容易地制造该存储装置。
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80.发明授权Method of producing optical disk-use original and method of producing optical disk 有权制造光盘使用原理的方法和制造光盘的方法公开(公告)号：US07670514B2
公开(公告)日：2010-03-02
申请号：US10498044
申请日：2003-09-25
CPC分类号： G11B7/261 , Y10S425/81 , Y10T428/24802
摘要： A method for manufacturing an optical disc master using an existing exposure system, and a method for manufacturing an optical disc having higher recording capacity. The method for manufacturing an optical disc, using a master to produce the optical disc having an irregular pattern thereon, the master being produced by the steps of forming a resist layer composed of a resist material including an incomplete oxide of a transition metal such as W or Mo on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal; selectively exposing the resist layer with laser according to a recording signal pattern; and developing the resist layer to form the predetermined irregular pattern.
摘要翻译： 一种使用现有曝光系统制造光盘母盘的方法，以及一种制造具有较高记录容量的光盘的方法。 制造光盘的方法，使用母盘来制造其上具有不规则图案的光盘，通过以下步骤制造母版：通过形成由包括过渡金属的不完全氧化物如W的抗蚀剂材料构成的抗蚀剂层 或Mo，不完全氧化物的氧含量小于对应于过渡金属的化合价的化学计量组成的氧含量; 根据记录信号图案用激光选择性地曝光抗蚀剂层; 并显影抗蚀剂层以形成预定的不规则图案。
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