公开(公告)号：US20120282742A1

公开(公告)日：2012-11-08

申请号：US13551038

申请日：2012-07-17

申请人： Koichi Matsuda ,  Ryo Hayashi ,  Shinji Kodaira

发明人： Koichi Matsuda ,  Ryo Hayashi ,  Shinji Kodaira

IPC分类号： H01L21/336

CPC分类号： H01L29/78669 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78678

摘要： A method for manufacturing a silicon semiconductor device includes the steps of diluting a silicon-containing raw material gas with hydrogen gas by a factor equal to or larger than 600, applying radiofrequency power to a gas mixture of the diluted raw material gas and hydrogen gas to induce electric discharge, depositing silicon out of the raw material gas decomposed by the electric discharge onto a substrate, and controlling the pressure of the gas mixture to be equal to or higher than 600 Pa. The power density Pw(W/cm2) of the radiofrequency power is specified in such a manner that the value Pw(W/cm2)*D/P(Pa) should fall within the range of 0.083 to 0.222, both inclusive, where D represents the dilution factor between the raw material gas and hydrogen gas and P (Pa) represents the pressure of the gas mixture.

摘要翻译： 一种硅半导体器件的制造方法，其特征在于，使用氢气将含硅原料气体稀释至600以上的步骤，向稀释的原料气体和氢气的气体混合物施加射频电力， 诱导放电，将由放电分解的原料气体中的硅沉积在基板上，将气体混合物的压力控制在600Pa以上，功率密度Pw（W / cm 2） 射频功率以Pw（W / cm2）* D / P（Pa）的值落在0.083〜0.222的范围内，其中D表示原料气体与氢气之间的稀释因子 气体和P（Pa）表示气体混合物的压力。

公开(公告)号：US08110436B2

公开(公告)日：2012-02-07

申请号：US12671054

申请日：2008-09-25

申请人： Ryo Hayashi ,  Hisato Yabuta ,  Yoshinori Tateishi ,  Nobuyuki Kaji

发明人： Ryo Hayashi ,  Hisato Yabuta ,  Yoshinori Tateishi ,  Nobuyuki Kaji

IPC分类号： H01L21/00

CPC分类号： H01L29/78618 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

摘要： A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of increasing the electrical conductivity of the oxide semiconductor layers by annealing in an atmosphere containing moisture. The steam pressure at the annealing step is higher than the saturated vapor pressure in the atmosphere at the annealing temperature.

摘要翻译： 提供一种用于制造场效晶体管的方法。 场效应晶体管在基板上包括源电极，漏电极，氧化物半导体层，绝缘层和栅电极。 该方法包括：在氧化物半导体层上形成绝缘层之后，通过在含有水分的气氛中进行退火来提高氧化物半导体层的导电性的退火步骤。 退火步骤中的蒸汽压力高于退火温度下大气中的饱和蒸气压。

公开(公告)号：US20100244022A1

公开(公告)日：2010-09-30

申请号：US12743082

申请日：2009-01-20

申请人： Kenji Takahashi ,  Ryo Hayashi

发明人： Kenji Takahashi ,  Ryo Hayashi

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/78648

摘要： A first gate electrode (2) is formed on a substrate (1); a first gate insulating layer (3) is formed so as to cover the first gate electrode (2); a semiconductor layer (4) including an oxide semiconductor is formed on the first gate insulating layer (3); a second gate insulating layer (7) is formed on the semiconductor layer (4); a second gate electrode (8) having a thickness equal to or larger than a thickness of the first gate electrode (2) is formed on the second gate insulating layer (7); and a drain electrode (6) and a source electrode (5) are formed so as to be connected to the semiconductor layer (4).

摘要翻译： 第一栅电极（2）形成在基板（1）上; 形成第一栅极绝缘层（3）以覆盖第一栅电极（2）; 在第一栅极绝缘层（3）上形成包括氧化物半导体的半导体层（4）; 在所述半导体层（4）上形成第二栅绝缘层（7）。 在所述第二栅极绝缘层（7）上形成厚度等于或大于所述第一栅电极（2）的厚度的第二栅电极（8）。 并且形成漏电极（6）和源电极（5），以连接到半导体层（4）。

公开(公告)号：US07737438B2

公开(公告)日：2010-06-15

申请号：US12167540

申请日：2008-07-03

申请人： Ayanori Endo ,  Ryo Hayashi ,  Tatsuya Iwasaki

发明人： Ayanori Endo ,  Ryo Hayashi ,  Tatsuya Iwasaki

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/265 ,  H01L21/268 ,  H01L21/3003 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618

摘要： A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.

摘要翻译： 制造场效应晶体管的方法包括以下步骤：形成各自含有氢或氘的源极和漏极; 形成氧化物半导体层，其中如果加入氢或氘，则电阻降低; 并且使氢或氘从源电极和漏电极扩散到氧化物半导体层。

公开(公告)号：US07696513B2

公开(公告)日：2010-04-13

申请号：US12282721

申请日：2007-03-02

申请人： Ryo Hayashi ,  Tatsuya Iwasaki

发明人： Ryo Hayashi ,  Tatsuya Iwasaki

IPC分类号： H01L21/16

CPC分类号： H01L27/3244 ,  H01L27/3211 ,  H01L27/326 ,  H01L29/7869 ,  H01L2251/5323

摘要： The present invention provides a light-emitting device, including: a pixel region provided on a substrate and including a blue pixel region, a green pixel region, and a red pixel region which correspond to lights of three primary colors of blue, green and red light, respectively, the pixel region including: a thin-film transistor having a source electrode, a drain electrode, a gate electrode, a gate insulating film, and an active layer; a light-emitting layer; and a lower electrode and a counter electrode for sandwiching the light-emitting layer therebetween, wherein the active layer includes an oxide; the drain electrode is electrically connected with a part of the light-emitting layer; and the thin-film transistor is arranged in a region other than the blue pixel region on the substrate.

摘要翻译： 本发明提供一种发光装置，包括：设置在基板上并包括蓝色像素区域，绿色像素区域和红色像素区域的像素区域，其对应于蓝色，绿色和红色三原色的光 分别包括：具有源电极，漏电极，栅极电极，栅极绝缘膜和有源层的薄膜晶体管的像素区域; 发光层; 以及用于将发光层夹在其间的下电极和对电极，其中所述有源层包括氧化物; 漏电极与发光层的一部分电连接; 并且薄膜晶体管布置在基板上的除了蓝色像素区域之外的区域中。

公开(公告)号：US20090072233A1

公开(公告)日：2009-03-19

申请号：US12282721

申请日：2007-03-02

申请人： Ryo Hayashi ,  Tatsuya Iwasaki

发明人： Ryo Hayashi ,  Tatsuya Iwasaki

IPC分类号： H01L33/00

CPC分类号： H01L27/3244 ,  H01L27/3211 ,  H01L27/326 ,  H01L29/7869 ,  H01L2251/5323

摘要： The present invention provides a light-emitting device, including: a pixel region provided on a substrate and including a blue pixel region, a green pixel region, and a red pixel region which correspond to lights of three primary colors of blue, green and red light, respectively, the pixel region including: a thin-film transistor having a source electrode, a drain electrode, a gate electrode, a gate insulating film, and an active layer; a light-emitting layer; and a lower electrode and a counter electrode for sandwiching the light-emitting layer therebetween, wherein the active layer includes an oxide; the drain electrode is electrically connected with a part of the light-emitting layer; and the thin-film transistor is arranged in a region other than the blue pixel region on the substrate.

摘要翻译： 本发明提供一种发光装置，包括：设置在基板上并包括蓝色像素区域，绿色像素区域和红色像素区域的像素区域，其对应于蓝色，绿色和红色三原色的光 分别包括：具有源电极，漏电极，栅极电极，栅极绝缘膜和有源层的薄膜晶体管的像素区域; 发光层; 以及用于将发光层夹在其间的下电极和对电极，其中所述有源层包括氧化物; 漏电极与发光层的一部分电连接; 并且薄膜晶体管布置在基板上的除了蓝色像素区域之外的区域中。

公开(公告)号：US08530246B2

公开(公告)日：2013-09-10

申请号：US12992073

申请日：2009-05-11

申请人： Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

发明人： Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L21/331 ,  G01R31/26

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.

摘要翻译： 用于控制具有至少半导体作为分量的半导体元件的阈值电压的方法的特征在于包括测量作为阈值电压的指标的阈值电压和特征值之一的处理; 基于所测量的阈值电压和作为阈值电压的指标的测量特征值之一来确定用于照射半导体的光的照射强度，照射时间和波长之一的处理; 以及将照射强度，照射时间和波长中的一个已经确定到半导体上的光照射的过程; 其中照射半导体的光是比半导体的吸收边缘的波长长的波长的光，并且通过光的照射来改变阈值电压。

公开(公告)号：US08513662B2

公开(公告)日：2013-08-20

申请号：US12992071

申请日：2009-05-11

申请人： Hisato Yabuta ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

发明人： Hisato Yabuta ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

IPC分类号： H01L29/72

CPC分类号： H01L29/78645 ,  H01L29/78633

摘要： Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.

摘要翻译： 提供一种半导体器件，其包括至少包含半导体作为元件的半导体元件，其特征在于包括：用于使波长比半导体的吸收边缘波长长的光照射半导体的机构; 以及调光机构，其设置在光通过的光路的一部分中，用于调节从强度，照射时间和光的波长选择的至少一个因素，其中半导体元件的阈值电压被改变 光由调光机构调节。

公开(公告)号：US08502217B2

公开(公告)日：2013-08-06

申请号：US12679901

申请日：2008-11-27

申请人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Tomohiro Watanabe

发明人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Tomohiro Watanabe

IPC分类号： H01L29/12 ,  H01L23/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L27/01

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78606

摘要： Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4×1021 atoms/cm3 or less, and the third insulating layer having a hydrogen content of more than 4×1021 atoms/cm3.

摘要翻译： 提供一种氧化物半导体器件，其包括氧化物半导体层和与氧化物半导体层接触的绝缘层，其中绝缘层包括：与氧化物半导体接触的第一绝缘层，其厚度为50nm以上 并且包括含有Si和O的氧化物; 与第一绝缘层接触的第二绝缘层，其厚度为50nm以上，并且包括含有Si和N的氮化物; 以及与第二绝缘层接触的第三绝缘层，具有4×1021原子/ cm3以下的氢含量的第一绝缘层和第二绝缘层，以及氢含量大于4× 1021原子/ cm3。

公开(公告)号：US20120146021A1

公开(公告)日：2012-06-14

申请号：US13403536

申请日：2012-02-23

申请人： Hisato Yabuta ,  Ayanori Endo ,  Nobuyuki Kaji ,  Ryo Hayashi

发明人： Hisato Yabuta ,  Ayanori Endo ,  Nobuyuki Kaji ,  Ryo Hayashi

IPC分类号： H01L33/08

CPC分类号： H01L29/247 ,  H01L29/66969 ,  H01L29/78693

摘要： An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M≧0.94×(7.121x+5.941y+5.675z)/(x+y+z)   (1) where 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≠0.

摘要翻译： 无定形氧化物半导体以In x Ga y Zn z的原子比含有选自In，Ga和Zn中的至少一种元素，其中非晶氧化物半导体的密度M由以下关系式（1）表示：M≥0.94×（7.121 x + 5.941y + 5.675z）/（x + y + z）（1）其中0＆nlE; x＆nlE; 1,0＆nlE; y＆nlE; 1,0和nlE; z＆nlE; 1和x + y + z≠0。