公开(公告)号：US06891871B1

公开(公告)日：2005-05-10

申请号：US09666553

申请日：2000-09-21

申请人： Yasuhiko Nomura ,  Nobuhiko Hayashi ,  Masayuki Hata ,  Masayuki Shono

发明人： Yasuhiko Nomura ,  Nobuhiko Hayashi ,  Masayuki Hata ,  Masayuki Shono

IPC分类号： H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01L33/44 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/176 ,  H01S2304/04

摘要： An SiNx film is formed on partial side surfaces and an electrode forming surface excluding an n-side electrode of a first contact layer, the side surfaces of each layer, the upper surface of a second cladding layer and the side surfaces of a ridge portion. An SiOy film is formed on the SiNx film. The SiNx film and the SiOy film form a dielectric film.

摘要翻译： 在部分侧面和除了第一接触层的n侧电极，各层的侧面，第二包覆层的上表面以外的电极形成表面形成SiN＆lt; x＆lt; 脊部的侧面。 在SiN＆lt; x＆gt;膜上形成SiO 2膜。 SiN x膜和SiO 2膜形成电介质膜。

公开(公告)号：US06734503B2

公开(公告)日：2004-05-11

申请号：US10211340

申请日：2002-08-05

申请人： Masayuki Hata ,  Nobuhiko Hayashi ,  Koji Tominaga ,  Yasuhiko Nomura ,  Tatsuya Kunisato ,  Hiroki Ohbo

发明人： Masayuki Hata ,  Nobuhiko Hayashi ,  Koji Tominaga ,  Yasuhiko Nomura ,  Tatsuya Kunisato ,  Hiroki Ohbo

IPC分类号： H01L2701

CPC分类号： H01S5/32341 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/3203 ,  H01S2301/173 ,  H01S2304/12

摘要： A nitride-based semiconductor element capable of effectively preventing a nitride-based semiconductor layer of a first area from cracking and reducing the degree of warpage of a substrate is obtained. This nitride-based semiconductor element comprises a first region formed on a prescribed region of a substrate and provided with an element including a first nitride-based semiconductor layer having a prescribed thickness and a second region formed on a region of the substrate other than the first region and provided with the first nitride-based semiconductor layer with a thickness smaller than the thickness in the first region. Thus, strain easily concentrates to the second region provided with the first nitride-based semiconductor layer with the smaller thickness, whereby strain of the first region provided with the element is relaxed.

摘要翻译： 可以获得能够有效地防止第一区域的氮化物系半导体层破裂并降低基板的翘曲程度的氮化物系半导体元件。 这种氮化物基半导体元件包括形成在基板的规定区域上的第一区域，并且设置有包括具有规定厚度的第一氮化物基半导体层和形成在基板以外的第一区域的第一区域 并且设置有厚度小于第一区域中的厚度的第一氮化物基半导体层。 因此，应变容易地集中到具有较小厚度的设置有第一氮化物基半导体层的第二区域，由此放置元件的第一区域的应变松弛。

公开(公告)号：US06713845B2

公开(公告)日：2004-03-30

申请号：US10084050

申请日：2002-02-28

申请人： Nobuhiko Hayashi ,  Tatsuya Kunisato ,  Hiroki Ohbo ,  Tsutomu Yamaguchi

发明人： Nobuhiko Hayashi ,  Tatsuya Kunisato ,  Hiroki Ohbo ,  Tsutomu Yamaguchi

IPC分类号： H01L2358

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A nitride-based semiconductor element having excellent element characteristics is obtained by obtaining a nitride-based semiconductor layer having excellent crystallinity without performing a long-time etching process. This nitride-based semiconductor element comprises a mask layer, having a recess portion, formed on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer, a nitride-based semiconductor layer formed on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer, and a nitride-based semiconductor element layer, formed on the nitride-based semiconductor layer, having an element region. Thus, the nitride-based semiconductor layer is formed while forming the void on the recess portion of the mask layer when laterally grown on the mask layer, whereby strain of the laterally grown nitride-based semiconductor layer is so relaxed that the nitride-based semiconductor layer is improved in crystallinity. The underlayer is formed in a substantially flat shape, whereby no etching may be performed over a long time dissimilarly to a case of forming recess portions on an underlayer consisting of a nitride-based semiconductor or the like.

摘要翻译： 通过获得具有优异结晶度的氮化物系半导体层，而不进行长时间蚀刻工艺，可以获得元素特性优异的氮化物系半导体元件。 该氮化物系半导体元件包括具有凹部的掩模层，形成在下层的大致平坦的上表面上以部分地暴露下层的上表面，形成在底层的露出部分上的氮化物系半导体层 以及掩模层，同时在掩模层的凹部上形成空隙，以及形成在具有元件区域的氮化物基半导体层上的氮化物基半导体元件层。 因此，当在掩模层上横向生长时，在掩模层的凹部上形成空隙的同时形成氮化物基半导体层，由此横向生长的氮化物基半导体层的应变如此松弛，使得氮化物基半导体 层的结晶度提高。 底层形成为大致平坦的形状，由此与在由氮化物类半导体等构成的基底上形成凹部的情况不同，长时间不进行蚀刻。

公开(公告)号：US06624001B2

公开(公告)日：2003-09-23

申请号：US10244513

申请日：2002-09-17

申请人： Hiroki Ohbo ,  Nobuhiko Hayashi

发明人： Hiroki Ohbo ,  Nobuhiko Hayashi

IPC分类号： H01L2100

CPC分类号： B82Y20/00 ,  H01L33/02 ,  H01S5/22 ,  H01S5/2216 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173

摘要： An AlGaN buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, an MQW active layer, and a p-AlGaN cladding layer are formed in this order on a sapphire substrate. A ridge portion is formed in the p-AlGaN cladding layer, and a p-GaN cap layer is formed on an upper surface of the ridge portion. An n-AlGaN first regrown low-temperature buffer layer and an n-AlGaN current blocking layer are formed in this order on a flat portion and on side surfaces of the ridge portion in the p-AlGaN cladding layer. A p-AlGaN second regrown low-temperature buffer layer and a p-GaN contact layer are formed on the n-AlGaN current blocking layer and on the upper surface of the ridge portion.

公开(公告)号：US06534800B1

公开(公告)日：2003-03-18

申请号：US09666557

申请日：2000-09-21

申请人： Hiroki Ohbo ,  Nobuhiko Hayashi

发明人： Hiroki Ohbo ,  Nobuhiko Hayashi

IPC分类号： H01L3300

CPC分类号： B82Y20/00 ,  H01L33/02 ,  H01S5/22 ,  H01S5/2216 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173

摘要： An AlGaN buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, an MQW active layer, and a p-AlGaN cladding layer are formed in this order on a sapphire substrate. A ridge portion is formed in the p-AlGaN cladding layer, and a p-GaN cap layer is formed on an upper surface of the ridge portion. An n-AlGaN first regrown low-temperature buffer layer and an n-AlGaN current blocking layer are formed in this order on a flat portion and on side surfaces of the ridge portion in the p-AlGaN cladding layer. A p-AlGaN second regrown low-temperature buffer layer and a p-GaN contact layer are formed on the n-AlGaN current blocking layer and on the upper surface of the ridge portion.

摘要翻译： 依次形成AlGaN缓冲层，未掺杂的GaN层，n-GaN接触层，n-InGaN抗裂层，n-AlGaN包层，MQW有源层和p-AlGaN包层 蓝宝石衬底。 在p-AlGaN包层中形成脊部，在该脊部的上表面形成有p-GaN覆盖层。 在p-AlGaN包层的平坦部分和脊部的侧表面上依次形成n-AlGaN第一再生长的低温缓冲层和n-AlGaN电流阻挡层。 在n-AlGaN电流阻挡层和脊部的上表面上形成p-AlGaN第二重新生长的低​​温缓冲层和p-GaN接触层。