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    Nitride-based semiconductor element
    1.
    发明授权
    Nitride-based semiconductor element 失效
    氮化物半导体元件

    公开(公告)号：US06734503B2

    公开(公告)日：2004-05-11

    申请号：US10211340

    申请日：2002-08-05

    申请人： Masayuki Hata ,  Nobuhiko Hayashi ,  Koji Tominaga ,  Yasuhiko Nomura ,  Tatsuya Kunisato ,  Hiroki Ohbo

    发明人： Masayuki Hata ,  Nobuhiko Hayashi ,  Koji Tominaga ,  Yasuhiko Nomura ,  Tatsuya Kunisato ,  Hiroki Ohbo

    IPC分类号： H01L2701

    CPC分类号： H01S5/32341 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/3203 ,  H01S2301/173 ,  H01S2304/12

    摘要： A nitride-based semiconductor element capable of effectively preventing a nitride-based semiconductor layer of a first area from cracking and reducing the degree of warpage of a substrate is obtained. This nitride-based semiconductor element comprises a first region formed on a prescribed region of a substrate and provided with an element including a first nitride-based semiconductor layer having a prescribed thickness and a second region formed on a region of the substrate other than the first region and provided with the first nitride-based semiconductor layer with a thickness smaller than the thickness in the first region. Thus, strain easily concentrates to the second region provided with the first nitride-based semiconductor layer with the smaller thickness, whereby strain of the first region provided with the element is relaxed.

    摘要翻译： 可以获得能够有效地防止第一区域的氮化物系半导体层破裂并降低基板的翘曲程度的氮化物系半导体元件。 这种氮化物基半导体元件包括形成在基板的规定区域上的第一区域，并且设置有包括具有规定厚度的第一氮化物基半导体层和形成在基板以外的第一区域的第一区域 并且设置有厚度小于第一区域中的厚度的第一氮化物基半导体层。 因此，应变容易地集中到具有较小厚度的设置有第一氮化物基半导体层的第二区域，由此放置元件的第一区域的应变松弛。

    Nitride-based semiconductor laser device and method of fabricating the same
    10.
    发明授权
    Nitride-based semiconductor laser device and method of fabricating the same 失效
    氮化物半导体激光器件及其制造方法

    公开(公告)号：US06928096B2

    公开(公告)日：2005-08-09

    申请号：US10114298

    申请日：2002-04-03

    申请人： Yasuhiko Nomura ,  Tatsuya Kunisato

    发明人： Yasuhiko Nomura ,  Tatsuya Kunisato

    IPC分类号： H01S5/16 ,  H01S5/323 ,  H01S5/343 ,  H01S5/00

    CPC分类号： H01S5/162 ,  H01S5/32341 ,  Y10S977/951

    摘要： A nitride-based semiconductor laser device capable of preventing deterioration in the vicinity of a facet is obtained. This nitride-based semiconductor laser device comprises a first conductivity type first cladding layer consisting of a nitride-based semiconductor formed on a substrate, an active layer formed on the first cladding layer, a second conductivity type second cladding layer consisting of a nitride-based semiconductor formed on the active layer and a high-resistance region formed at least portions of the active layer and the second cladding layer in the vicinity of the facet. The high-resistance region has higher resistance than the remaining regions, whereby a current hardly flows to the high-resistance region. Thus, temperature increase is suppressed in the vicinity of the facet, whereby deterioration can be prevented in the vicinity of the facet.

    摘要翻译： 可以获得能够防止小面附近的劣化的氮化物系半导体激光装置。 该氮化物系半导体激光装置包括由形成在基板上的氮化物系半导体构成的第一导电型第一包层，形成在第一包层上的有源层，由氮化物系形成的第二导电型第二包覆层 形成在有源层上的半导体层和形成在该小面附近的有源层和第二包层的至少一部分的高电阻区域。 高电阻区域比其余区域具有更高的电阻，因此电流几乎不流向高电阻区域。 因此，在小面附近抑制温度上升，从而可以防止在小面附近的劣化。