公开(公告)号：US07080862B2

公开(公告)日：2006-07-25

申请号：US11031880

申请日：2005-01-07

申请人： Toshihiko Suzuki ,  Yoshiharu Itai ,  Kazuo Omura

发明人： Toshihiko Suzuki ,  Yoshiharu Itai ,  Kazuo Omura

IPC分类号： B60R19/24

CPC分类号： B60R19/24 ,  B60R2019/182

摘要： A bumper beam structure includes a beam extending transversely of a vehicle and right and left corned members attached to right and left ends of the beam. The beam is mountable to front ends of right and left vehicle frame members via the right and left corner members. The beam and the right and left corner members are all extruded members. The beam is disposed with its axis in an extrusion direction oriented transversely of the vehicle. The right and left corner members are disposed with their axes in an extrusion direction oriented vertically of the vehicle.

摘要翻译： 缓冲梁结构包括横向于车辆延伸的梁和附接到梁的右端和左端的左右拐角构件。 梁可以通过左右角部件安装到左右车架构件的前端。 梁和左右角部件都是挤压件。 梁以其轴线布置在横向于车辆的挤压方向上。 左右角部件的轴线以沿车辆垂直方向取向的挤压方向设置。

公开(公告)号：US07053933B2

公开(公告)日：2006-05-30

申请号：US09825022

申请日：2001-04-03

申请人： Toshihiko Suzuki

发明人： Toshihiko Suzuki

IPC分类号： H04N5/232

CPC分类号： H04N5/2352 ,  H04N5/772 ,  H04N5/85

摘要： An object of this invention is to easily execute photography in various photography modes. In order to achieve this object, an image pickup apparatus of this invention has a setting device for setting a plurality of chapters, and a control device for controlling photography operation in an order of the set chapters on the basis of settings of the plurality of chapters by the setting device, in which the setting device sets, for each of the plurality of chapters, a photography time and a mode for executing desired photography during the photography time.

摘要翻译： 本发明的目的是容易地以各种摄影模式执行摄影。 为了实现该目的，本发明的图像拾取装置具有用于设置多个章节的设置装置，以及用于基于多个章节的设置以设定章节的顺序来控制拍摄操作的控制装置 对于多个章节中的每个章节，设置装置设置的拍摄时间和在拍摄时间期间执行期望的拍摄的模式的设定装置。

公开(公告)号：US07020049B2

公开(公告)日：2006-03-28

申请号：US10421701

申请日：2003-04-24

申请人： Toshihiko Suzuki ,  Katsumi Arisaka ,  Takashi Inoue ,  Toshio Matsumoto

发明人： Toshihiko Suzuki ,  Katsumi Arisaka ,  Takashi Inoue ,  Toshio Matsumoto

IPC分类号： G11B11/00

CPC分类号： G11B11/10595 ,  G11B11/10515

摘要： In a magneto-optical disk drive using a domain wall moving magneto-optical recording medium, a test-writing operation adjustment to deal wit dynamic fluctuation factors is minimized, and a reproducing or recording laser power is automatically optimized. A power of a light beam by which a domain wall starts to move is detected, and a power of a laser used to reproduce or record an information is corrected based on a change in the domain wall movement starting power. As the domain wall movement starting power, it is possible to use, for example, when the power of a light beam is varied, such a power as to maximize a rate of change of the amplitude of a reproducing signal.

摘要翻译： 在使用畴壁移动磁光记录介质的磁 - 光盘驱动器中，将动态波动因数进行测试写入操作调整最小化，并且自动优化再现或记录激光功率。 检测到域壁开始移动的光束的功率，并且基于域壁移动启动功率的变化来校正用于再现或记录信息的激光的功率。 作为域壁移动启动功率，例如当光束的功率变化时，可以使用最大化再现信号的幅度变化率的功率。

公开(公告)号：US20050278959A1

公开(公告)日：2005-12-22

申请号：US11147386

申请日：2005-06-08

申请人： Takeshi Nishimiya ,  Toshihiko Suzuki ,  Jiro Suzuki ,  Yuki Wada ,  Toshiyuki Kani

发明人： Takeshi Nishimiya ,  Toshihiko Suzuki ,  Jiro Suzuki ,  Yuki Wada ,  Toshiyuki Kani

IPC分类号： B23D45/16 ,  B23D59/00 ,  B27B9/00

CPC分类号： B27B9/00 ,  B23D59/00

摘要： A power driven circular saw includes a base able to slidingly contact a workpiece and a saw unit positioned above the base and supported by the base. The saw unit includes a motor case accommodating an electric motor, a handle extending from the motor case and able to be grasped by an operator, a circular saw blade rotatably driven by the electric motor and positioned to partly extend downward below the lower surface of the base, and a blade case for substantially covering the upper half of the saw blade. A power indication lamp is disposed on one side of the handle and is illuminated when power is supplied to the circular saw.

摘要翻译： 电动圆锯包括能够滑动地接触工件的基座和位于基座上方并被基座支撑的锯单元。 锯单元包括容纳电动机的电动机壳体，从电动机壳体延伸并能够被操作者抓住的手柄，由电动机可旋转地驱动的圆锯片，并且定位成部分地向下延伸到下面的下表面 基部和用于基本上覆盖锯片的上半部的刀片壳体。 电源指示灯设置在手柄的一侧，并且当向圆锯供电时被照亮。

公开(公告)号：US06725110B2

公开(公告)日：2004-04-20

申请号：US09863699

申请日：2001-05-23

申请人： Toshihiko Suzuki

发明人： Toshihiko Suzuki

IPC分类号： G06F1700

CPC分类号： G10L19/0208

摘要： A digital audio decoder decodes or expands compressed data such as bit stream data, which are compressed based on the MPEG/Audio standard. Inverse quantization circuits perform inverse quantization on plural bit stream data, which are supplied thereto in connection with multiple channels respectively, thus producing inversely quantized data with respect to a prescribed number (e.g., thirty two) of sub-band samples respectively. The inversely quantized data are combined together among the multiple channels with respect to the prescribed number of the sub-band samples respectively. Then, a filter bank synthesizes together combined data corresponding to all of the sub-band samples, thus reproducing original digital audio signals. Multipliers are provided for use in gain control on the inversely quantized data with respect to the sub-band samples respectively. In addition, it is possible to additionally provide multipliers for amplifying the inversely quantized data of selected sub-band samples corresponding to low-frequency components of sound. This enables bass boost operations to be performed within the decoder. Surround effect processing circuits can be incorporated subsequently to the inverse quantization circuits, so desired surround effects are imparted to the inversely quantized data with respect to the sub-band samples respectively. The surround effect processing circuits simply contain multipliers whose coefficients are adequately controlled to achieve selective application of the surround effects among multiple channels.

摘要翻译： 数字音频解码器解码或扩展基于MPEG / Audio标准压缩的压缩数据，例如比特流数据。 逆量化电路对多个比特流数据进行逆量化，分别与多个信道相关地提供给它们，从而分别产生相对于规定数量（例如，三十二个）子带样本的反量化数据。 相对于子带样本的规定数量，反量化数据在多个信道中组合在一起。 然后，滤波器组将对应于所有子带采样的组合数据合成在一起，从而再现原始数字音频信号。 倍增器分别用于相对于子带样本的逆量化数据的增益控制。 此外，可以另外提供用于放大对应于声音的低频分量的所选择的子带样本的反量化数据的乘法器。 这使得能够在解码器内执行低音升压操作。 环绕效应处理电路可以随后并入逆量化电路，因此分别对子带样本赋予反量化数据所需的环绕效应。 环绕效果处理电路简单地包含其系数被充分控制的乘法器，以实现多个通道之间的环绕效果的选择性应用。

公开(公告)号：US5953090A

公开(公告)日：1999-09-14

申请号：US776592

申请日：1997-02-06

申请人： Masao Ozeki ,  Haruki Mori ,  Eiji Shidoji ,  Toshihiko Suzuki

发明人： Masao Ozeki ,  Haruki Mori ,  Eiji Shidoji ,  Toshihiko Suzuki

IPC分类号： G02F1/1335 ,  G02F1/13363 ,  G02F1/139 ,  G02F1/1347

CPC分类号： G02F1/1397 ,  G02F1/133636 ,  G02F1/133553 ,  G02F2001/133531 ,  G02F2203/02 ,  G02F2203/34

摘要： A reflection type color liquid crystal display apparatus comprising a polarizing plate 1 having an absorbing axis 18, a birefringent plate 3, a liquid crystal layer 6 and a reflection layer 8 wherein the absorbing axis 18, a first orientation 14, a second orientation 15, a first optical anisotropic axis 16 and a second anisotropic axis 17 are set so as to form predetermined crossing angles .theta..sub.1, .theta..sub.2, .theta..sub.3, .theta..sub.4, and selected voltage values of at least three values are applied to the liquid crystal layer 6 from a multiplex driving circuit 10.Without using a color filter, a very bright chromatic color (white or black) is displayed at the time of an OFF waveform even in multiplex driving, and development of colors of very bright red, blue and green can be obtained with a selection voltage or an intermediate voltage between the selection voltage and a non-selection voltage.

摘要翻译： PCT No.PCT / JP96 / 01556 Sec。 371日期1997年2月6日 102（e）日期1997年2月6日PCT提交1996年6月7日PCT公布。 公开号WO96 / 41232 日期：1996年12月19日一种反射型彩色液晶显示装置，包括具有吸收轴18的偏振片1，双折射板3，液晶层6和反射层8，其中吸收轴18，第一取向14， 第二取向15，第一光学各向异性轴16和第二各向异性轴17被设定为形成预定的交叉角θ1，θ2，θ3，θ4，并且至少三个值的选定电压值被施加到 来自多路驱动电路10的液晶层6.即使在多路驱动中，也不使用彩色滤光片，即使在OFF波形时也显示非常明亮的彩色（白色或黑色），并且显现非常亮的红色 可以在选择电压和非选择电压之间具有选择电压或中间电压来获得蓝色和绿色。

公开(公告)号：US5395641A

公开(公告)日：1995-03-07

申请号：US852644

申请日：1992-03-17

申请人： Kazuyoshi Shibata ,  Toshihiko Suzuki

发明人： Kazuyoshi Shibata ,  Toshihiko Suzuki

IPC分类号： G01N27/20 ,  G01N33/38 ,  B05D1/00

CPC分类号： G01N33/388

摘要： A process for detecting any defect in a ceramic body, including the steps of forming an electrically conductive layer in any such defects including fine voids present in the ceramic body, and then detecting presence or absence of the defect by measuring electrical conductivity between two given points shorted by the electrically conductive layer. The electrically conductive layer may be formed by penetrating an electrically conductive liquid into the defect. Alternatively, the electrically conductive layer may be formed by penetrating a penetrable liquid capable of forming the electrically conductive layer by thermal treatment or chemical treatment and thermally or chemically treating same.

摘要翻译： 一种用于检测陶瓷体中的任何缺陷的方法，包括以下步骤：在存在于陶瓷体中的细小空隙的任何这种缺陷中形成导电层，然后通过测量两个给定点之间的电导率来检测缺陷的存在或不存在 被导电层短路。 可以通过将导电液体穿入缺陷中而形成导电层。 或者，导电层可以通过用能够通过热处理或化学处理并对其进行热或化学处理而穿透能够形成导电层的可穿透液体而形成。

公开(公告)号：US4951104A

公开(公告)日：1990-08-21

申请号：US295515

申请日：1989-01-11

申请人： Yasaburo Kato ,  Toshihiko Suzuki ,  Nobuyuki Isawa ,  Hideo Kanbe ,  Masaharu Hamasaki

发明人： Yasaburo Kato ,  Toshihiko Suzuki ,  Nobuyuki Isawa ,  Hideo Kanbe ,  Masaharu Hamasaki

IPC分类号： C30B15/30 ,  C30B31/20 ,  H01J9/233 ,  H01L21/261 ,  H01L27/148 ,  H01L29/78 ,  H01L31/18

CPC分类号： H01L21/261 ,  C30B15/305 ,  C30B31/20 ,  H01L27/14831 ,  H01L27/14887 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic transmutation through neutron irradiation of a p-type silicon Si wafer, and thus produces a Si substrate with a resistivity .rho..sub.s of 10 to 100 ohm-cm. or preferably 40 to 60 ohm-cm. A solid-state image pick-up device with a plurality of photosensors and vertical and horizontal shift registers as set forth above is then fabricated using the resulting Si substrate. In the preferred process, the silicon substrate can be obtained by irradiating a wafer sectioned from a crystal grown by the MCZ method, for instance, with neutrons as described before until it has the required resistivity .rho..sub.s. This silicon substrate is preferably of a p-type before neutron irradiation, that is, in the crystal growth state, and its resistivity .rho..sub.o is then ten or more times higher (100 ohm-cm. or more) than that .rho..sub.s obtained following neutron irradiation. For instance, if .rho..sub.s is to be 40 to 50 ohm-cm., .rho..sub.o should be 680 to 1180 ohm-cm. Then n-type impurities, e.g. phosphorus P are generated by neutron irradiation to convert the silicon substrate to n-type with a low resistivity of .rho..sub.S =10 to 100 ohm-cm., or of 40 to 50 ohm-cm.

摘要翻译： 固态摄像装置的制造方法将构成元素Si的一部分变更为n型杂质磷P，由此通过p型的中子照射使基板变为n型 硅Si晶片，并且因此产生电阻率rho为10至100ohm-cm的Si衬底。 或优选为40至60欧姆 - 厘米。 然后使用所得到的Si衬底制造具有如上所述的多个光电传感器和垂直和水平移位寄存器的固态图像拾取装置。 在优选的方法中，可以通过照射由通过MCZ方法生长的晶体（例如，如上所述的中子）分离的晶片直到其具有所需的电阻率rho s来获得硅衬底。 该硅衬底优选在中子照射之前为p型，即处于晶体生长状态，并且其电阻率rho o比后续获得的rho多高十倍以上（100ohm-cm以上） 中子照射。 例如，如果rho为40〜50ohm-cm，则rho应为680〜1180ohm-cm。 然后，n型杂质，例如 磷P通过中子照射产生，以将硅衬底转换成具有低电阻率的rho = 10至100欧姆 - 厘米或40至50欧姆 - 厘米的n型。

公开(公告)号：US4836788A

公开(公告)日：1989-06-06

申请号：US927161

申请日：1986-11-05

申请人： Yasaburo Kato ,  Toshihiko Suzuki ,  Nobuyuki Isawa ,  Hideo Kanbe ,  Masaharu Hamasaki

发明人： Yasaburo Kato ,  Toshihiko Suzuki ,  Nobuyuki Isawa ,  Hideo Kanbe ,  Masaharu Hamasaki

IPC分类号： C30B15/30 ,  C30B31/20 ,  H01J9/233 ,  H01L21/261 ,  H01L27/148 ,  H01L29/78 ,  H01L31/18

CPC分类号： H01L21/261 ,  C30B15/305 ,  C30B31/20 ,  H01L27/14831 ,  H01L27/14887 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic transmutation through neutron irradiation of a p-type silicon Si wafer, and thus produces a Si substrate with a resistivity .rho..sub.s of 10 to 100 ohm-cm. or preferably 40 to 60 ohm-cm. A solid-state image pick-up device with a plurality of photosensors and vertical and horizontal shift registers as set forth above is then fabricated using the resulting Si substrate. In the preferred process, the silicon substrate can be obtained by irradiating a wafer sectioned from a crystal grown by the MCZ method, for instance, with neutrons as described before until it has the required resistivity .rho..sub.s. This silicon substrate is preferably of a p-type before neutron irradiation, that is, in the crystal growth state, and its resistivity .rho..sub.o is then ten or more times higher (100 ohm-cm. or more) than that .rho..sub.s obtained following neutron irradiation. For instance, if .rho..sub.s is to be 40 to 50 ohm-cm., .rho..sub.o should be 680 to 1180 ohm-cm. Then, n-type impurities, e.g. phosphorus P are generated by neutron irradiation to convert the silicon substrate to n-type with a low resistivity of .rho..sub.s =10 to 100 ohm-cm., or of 40 to 50 ohm-cm.

摘要翻译： 固态摄像装置的制造方法将构成元素Si的一部分变更为n型杂质磷P，由此通过p型的中子照射使基板变为n型 硅Si晶片，并且因此产生电阻率rho为10至100ohm-cm的Si衬底。 或优选为40至60欧姆 - 厘米。 然后使用所得到的Si衬底制造具有如上所述的多个光电传感器和垂直和水平移位寄存器的固态图像拾取装置。 在优选的方法中，可以通过照射由通过MCZ方法生长的晶体（例如，如上所述的中子）分离的晶片直到其具有所需的电阻率rho s来获得硅衬底。 该硅衬底优选在中子照射之前为p型，即处于晶体生长状态，并且其电阻率rho o比后续获得的rho多高十倍以上（100ohm-cm以上） 中子照射。 例如，如果rho为40〜50ohm-cm，则rho应为680〜1180ohm-cm。 然后，n型杂质，例如 磷P通过中子照射产生，以将硅衬底转换成具有低电阻率的rho = 10至100欧姆 - 厘米或40至50欧姆 - 厘米的n型。

公开(公告)号：US4462930A

公开(公告)日：1984-07-31

申请号：US446034

申请日：1982-12-01

申请人： Toshihiko Suzuki ,  Noboru Matsui

发明人： Toshihiko Suzuki ,  Noboru Matsui

IPC分类号： H01C7/00 ,  C04B35/26 ,  G01N27/12 ,  H01B1/06

CPC分类号： G01N27/121 ,  Y10T29/49082

摘要： A humidity sensor formed of a sintered compact consisting essentially of material substantially of a spinel structure represented by the formula: M.sub.1-x A.sub.x Fe.sub.2 O.sub.4-.alpha. where M stands for magnesium or zinc, A stands for an alkali metal, x is the numerical value in the range of 0.001 to 0.2, and .alpha. is the number of oxygen vacancies. The humidity sensor is highly sensitive over a wide relative humidity range, withstands a long use and presents almost no hysteresis in its humidity-resistance characteristics.

摘要翻译： 由基本由主要由尖晶石结构的材料组成的烧结体形成的湿度传感器，其基本上由式M1-xAxFe2O4-α表示，其中M代表镁或锌，A代表碱金属，x是范围内的数值 为0.001〜0.2，α为氧空位数。 湿度传感器在宽的相对湿度范围内是高度敏感的，可以长期使用，并且在其耐湿性能方面几乎没有迟滞。