Abstract:
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
Abstract:
A current fed bipolar junction transistor (BJT) based inverter ballast includes base drive circuits configured to drive respective BJT switches, and high-speed drive reverse peak current limiting circuits, configured to operate in conjunction with the respective base drive circuits.
Abstract:
Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.
Abstract:
A no load detection and shutdown circuit in an isolated driver is provided. A no load condition is detected by primary side evaluation of a reflected voltage. If a determination is made that a no load condition is present, the no load detection circuit signals a half bridge driver of the driver to cease oscillations, shutting down the driver.
Abstract:
An inverter for a lighting device including one or more solid state light sources is used to power a secondary load, such as a cooling device, sensor, or control with an auxiliary power circuit that provides a selectable auxiliary voltage to the secondary load. The auxiliary power circuit includes a voltage regulation circuit and a voltage selection circuit. The voltage selection circuit provides a feedback voltage to the voltage regulation circuit which his indicative of auxiliary output voltage. The voltage regulation circuit operates based on the feedback voltage and a reference voltage to adjust the auxiliary voltage to a level that differs from the input voltage from the inverter.
Abstract:
A mobile computing device comprises a wireless transceiver and a processing circuit. The processing circuit is configured to identify a location, to identify a wireless access point within a predetermined distance of the location, to detect a wireless access point identifier using the wireless transceiver, to compare the detected wireless access point identifier to the identified wireless access point, and to initiate location determination based on the comparison.
Abstract:
Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.
Abstract:
A ballast for dimming a lamp is provided. The ballast includes an inverter circuit for providing a lamp current for energizing the lamp and a dim interface for receiving an input indicative of a selected lighting level. A control circuit is connected to the dim interface for generating a pulse-width-modulated signal having a duty cycle corresponding to the selected lighting level. A switching network is connected to the control circuit for receiving the pulse-width-modulated signal. The switching network operates between a conductive state and a non-conductive state as a function of the pulse-width-modulated signal. An impedance device is connected across the switching network and is configured for connecting in series with the lamp so that the impedance device receives the lamp current when the switching network is operating in the non-conductive state and the lamp current bypasses the capacitor when the switching network is operating in the conductive state.
Abstract:
A network device component receives traffic, determines whether the traffic is host bound traffic or non-host bound traffic, and classifies, based on a user-defined classification scheme, the traffic when the traffic is host bound traffic. The network device component also assigns, based on the classification, the classified host bound traffic to a queue associated with network device component for forwarding the classified host bound traffic to a host component of the network device.
Abstract:
A bi-level lamp ballast to selectively operate two lamps is provided. The ballast includes a control circuit having an input, connected to a switching network, and an output, which provides a particular control signal based on the state of the switching network. The ballast also includes respective lamp control switches, each having respective outputs. The first switch is connected to the output and a ballast power supply. In its first state, it connects the ballast power supply to its first output, and in its second state, it connects the ballast power supply to its second output. The second switch is connected to the output and a ground. In its first state, it connects the ground to its first output, and in its second state, it connects the ground to its second output. The state of each lamp control switch depends on the control signal generated by the control circuit.