TEMPERATURE CONTROLLED ACOUSTIC RESONATOR

    公开(公告)号:US20130194057A1

    公开(公告)日:2013-08-01

    申请号:US13361724

    申请日:2012-01-30

    Inventor: Richard C. Ruby

    CPC classification number: H03H9/172 H03H3/02 H03H9/02102 H03H9/08 H03H9/54

    Abstract: An acoustic resonator device includes an annular acoustic resonator, a heater coil and a heat sensor. The annular acoustic resonator is positioned over a trench formed in a substrate of the acoustic resonator device. The heater coil is disposed around a perimeter of the annular acoustic resonator, the heater coil including a resistor configured to receive a heater current. The heat sensor is configured to adjust the heater current in response to a temperature of the heater coil.

    Resonator device including electrode with buried temperature compensating layer
    72.
    发明授权
    Resonator device including electrode with buried temperature compensating layer 有权
    谐振器器件包括具有埋入温度补偿层的电极

    公开(公告)号:US08436516B2

    公开(公告)日:2013-05-07

    申请号:US13404095

    申请日:2012-02-24

    CPC classification number: H03H9/131 H03H3/04 H03H9/02102 H03H9/173 H03H9/175

    Abstract: An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.

    Abstract translation: 声谐振器装置包括在基板上的复合第一电极,复合电极上的压电层和压电层上的第二电极。 第一电极包括具有正温度系数的掩埋温度补偿层。 压电层具有负温度系数,因此温度补偿层的正温度系数抵消压电层的负温度系数的至少一部分。

    Bulk acoustic resonator electrical impedance transformers
    73.
    发明授权
    Bulk acoustic resonator electrical impedance transformers 有权
    体积谐振器电阻抗变压器

    公开(公告)号:US07855618B2

    公开(公告)日:2010-12-21

    申请号:US12112633

    申请日:2008-04-30

    CPC classification number: H03H9/587 H03H9/0095 H03H9/132 H03H9/583

    Abstract: An electrical impedance transformer comprises a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency. The electrical impedance transformer also comprises: a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR. The electrical impedance transformer also includes a decoupling layer disposed between the first and the second FBARs. The first electrical impedance differs from the second electrical impedance and the first and second resonance frequencies are substantially the same.

    Abstract translation: 电阻抗变压器包括具有第一电阻抗和第一谐振频率的第一膜体声波谐振器(FBAR)。 电阻抗变压器还包括:第二FBAR,具有第二电阻抗和第二谐振频率,并且设置在第一FBAR上。 电阻抗变压器还包括设置在第一和第二FBAR之间的去耦层。 第一电阻抗与第二电阻抗不同,第一和第二谐振频率基本上相同。

    Method of manufacturing vertically separated acoustic filters and resonators
    74.
    发明授权
    Method of manufacturing vertically separated acoustic filters and resonators 失效
    制造垂直分离的声学滤波器和谐振器的方法

    公开(公告)号:US07841055B2

    公开(公告)日:2010-11-30

    申请号:US11373451

    申请日:2006-03-09

    Abstract: An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

    Abstract translation: 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离,所以实现谐振器所需的总面积减小,从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

    HBAR oscillator and method of manufacture
    75.
    发明授权
    HBAR oscillator and method of manufacture 有权
    HBAR振荡器及其制造方法

    公开(公告)号:US07508286B2

    公开(公告)日:2009-03-24

    申请号:US11540413

    申请日:2006-09-28

    CPC classification number: H03H3/04 H03H9/105 H03H9/605

    Abstract: An oscillator comprises a substrate and a high tone bulk acoustic resonator (HBAR), which includes a portion of the substrate. The oscillator also comprises a film bulk acoustic resonator (FBAR) filter disposed over the substrate. The filter comprises a plurality of FBAR devices. The oscillator also comprises a plurality of acoustic isolators disposed in the substrate, wherein one of the isolators is disposed beneath each of the FBAR devices. A method of fabricating an oscillator is also disclosed.

    Abstract translation: 振荡器包括衬底和高音量体声波谐振器(HBAR),其包括衬底的一部分。 振荡器还包括设置在衬底上的膜体声波谐振器(FBAR)滤波器。 滤波器包括多个FBAR装置。 振荡器还包括设置在基板中的多个隔声器,其中一个隔离器设​​置在每个FBAR装置的下方。 还公开了一种制造振荡器的方法。

    Film deposition to enhance sealing yield of microcap wafer-level package with vias
    80.
    发明授权
    Film deposition to enhance sealing yield of microcap wafer-level package with vias 失效
    薄膜沉积,以提高具有通孔的微型晶圆级封装的密封产量

    公开(公告)号:US06777263B1

    公开(公告)日:2004-08-17

    申请号:US10647040

    申请日:2003-08-21

    CPC classification number: B81C1/00269 H01L21/50

    Abstract: A method for forming a wafer package includes forming a die structure, wherein the die structure includes a first wafer, a device mounted on the first wafer, a second wafer mounted atop the first wafer with a first seal ring around the device and a second seal ring around a via contact. The method further includes forming a trench in the second wafer around the first seal ring, filling the trench and the via contact with a sealing agent, patterning a topside of the second wafer to removed the excessive sealing agent and to expose a contact pad of the via contact, and singulating a die around the first seal ring.

    Abstract translation: 一种用于形成晶片封装的方法,包括形成管芯结构,其中管芯结构包括第一晶片,安装在第一晶片上的器件,安装在第一晶片顶部的第二晶片,具有围绕器件的第一密封环,第二密封 环绕通道接触。 所述方法还包括在所述第二晶片周围形成沟槽,围绕所述第一密封环,用密封剂填充所述沟槽和所述通孔接触,图案化所述第二晶片的顶侧以除去所述过量的密封剂并露出所述第二晶片的接触垫 通过接触,并且围绕第一密封环分开模具。

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