公开(公告)号：US20190097125A1

公开(公告)日：2019-03-28

申请号：US16202536

申请日：2018-11-28

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01L43/08

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

公开(公告)号：US10164168B2

公开(公告)日：2018-12-25

申请号：US15187488

申请日：2016-06-20

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Witold Kula ,  Wayne I. Kinney

IPC: H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10

Abstract: Methods of forming memory cells, magnetic memory cell structures, and arrays of magnetic memory cell structures are disclosed. Embodiments of the methods include patterning a precursor structure to form a stepped structure including at least an upper discrete feature section and a lower feature section with a broader width, length, or both than the upper discrete feature section. The method uses patterning acts directed along a first axis, e.g., an x-axis, and then along a second axis, e.g., a y-axis, that is perpendicular to or about perpendicular to the first axis. The patterning acts may therefore allow for more uniformity between a plurality of formed, neighboring cell core structures, even at dimensions below about thirty nanometers. Magnetic memory structures and memory cell arrays are also disclosed.

公开(公告)号：US20180366516A1

公开(公告)日：2018-12-20

申请号：US16112125

申请日：2018-08-24

Applicant: Micron Technology, Inc.

Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08

CPC classification number: H01L27/222 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3218 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random-access memory (STT-MRAM) systems, and methods of fabrication.

公开(公告)号：US20180233657A1

公开(公告)日：2018-08-16

申请号：US15952507

申请日：2018-04-13

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

公开(公告)号：US20170358741A1

公开(公告)日：2017-12-14

申请号：US15690013

申请日：2017-08-29

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Andy Lyle ,  Witold Kula

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US20170309680A1

公开(公告)日：2017-10-26

申请号：US15642577

申请日：2017-07-06

Applicant: Micron Technology, Inc.

Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01L43/10

CPC classification number: H01L27/222 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3218 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.

公开(公告)号：US09786841B2

公开(公告)日：2017-10-10

申请号：US15468225

申请日：2017-03-24

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Andy Lyle ,  Witold Kula

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US20170033155A1

公开(公告)日：2017-02-02

申请号：US15289610

申请日：2016-10-10

Applicant: Micron Technology, Inc.

Inventor： Witold Kula ,  Wayne I. Kinney ,  Gurtej S. Sandhu

IPC: H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/222 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.

Abstract translation: 磁性电池芯包括具有多个磁性区域的种子区域和其上的多个非磁性区域。 种子区域提供了能够形成具有能够形成具有期望的晶体结构的上覆自由区域的微结构的上覆非磁性区域的模板。 自由区域设置在两个非磁性区域之间，这两个非磁性区域都可以被配置成诱导表面/界面磁各向异性。 因此，该结构被配置为具有高的磁各向异性强度，高能势垒，高隧道磁阻，低编程电流，低电池到电池的电阻变化，以及磁特性中的低电池到电池的变化。 还公开了制造方法，存储器阵列，存储器系统和电子系统。

公开(公告)号：US09520553B2

公开(公告)日：2016-12-13

申请号：US14687317

申请日：2015-04-15

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Witold Kula ,  Gurtej S. Sandhu

IPC: H01L43/08 ,  G11B5/127 ,  G11B5/39 ,  H01L43/12 ,  H01L43/10

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

Abstract: A method of forming a magnetic electrode of a magnetic tunnel junction comprises forming non-magnetic MgO-comprising material over conductive material of the magnetic electrode being formed. An amorphous metal is formed over the MgO-comprising material. Amorphous magnetic electrode material comprising Co and Fe is formed over the amorphous metal. The amorphous magnetic electrode material is devoid of B. Non-magnetic tunnel insulator material comprising MgO is formed directly against the amorphous magnetic electrode material. The tunnel insulator material is devoid of B. After forming the tunnel insulator material, the amorphous Co and Fe-comprising magnetic electrode material is annealed at a temperature of at least about 250° C. to form crystalline Co and Fe-comprising magnetic electrode material from an MgO-comprising surface of the tunnel insulator material. The crystalline Co and Fe-comprising magnetic electrode material is devoid of B. Other method and non-method embodiments are disclosed.

Abstract translation: 形成磁性隧道结的磁极的方法包括在形成的磁极的导电材料上形成非磁性的含MgO材料。 在包含MgO的材料上形成无定形金属。 包含Co和Fe的非晶磁性电极材料形成在无定形金属上。 无定形磁极材料不含B.直接与非晶磁性电极材料形成包含MgO的非磁性隧道绝缘体材料。 隧道绝缘体材料没有B.在形成隧道绝缘体材料之后，在至少约250℃的温度下对包含无定形Co和Fe的磁性电极材料进行退火以形成含Co和Fe的结晶的电极材料 从隧道绝缘体材料的包含MgO的表面。 含有Co和Fe的结晶的电极材料不含B。公开了其它方法和非方法的实施方案。

公开(公告)号：US20160329486A1

公开(公告)日：2016-11-10

申请号：US14706182

申请日：2015-05-07

Applicant: Micron Technology, Inc.

Inventor： Jonathan D. Harms ,  Wei Chen ,  Sunil S. Murthy ,  Witold Kula

IPC: H01L43/02

CPC classification number: H01L43/08

Abstract: A magnetic tunnel junction has a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic recording material of the first electrode comprises a first magnetic region, a second magnetic region spaced from the first magnetic region, and a third magnetic region spaced from the first and second magnetic regions. A first non-magnetic insulator metal oxide-comprising region is between the first and second magnetic regions. A second non-magnetic insulator metal oxide-comprising region is between the second and third magnetic regions. Other embodiments are disclosed.

Abstract translation: 磁性隧道结具有包括磁记录材料的导电第一磁极。 导电的第二磁电极与第一电极间隔开并且包括磁性参考材料。 非磁性隧道绝缘体材料位于第一和第二电极之间。 第一电极的磁记录材料包括第一磁性区域，与第一磁性区域间隔开的第二磁性区域和与第一和第二磁性区域间隔开的第三磁性区域。 第一非磁性绝缘体金属氧化物包含区域在第一和第二磁性区域之间。 第二非磁性绝缘体金属氧化物包含区域在第二和第三磁性区域之间。 公开了其他实施例。