-
公开(公告)号：US20050084716A1
公开(公告)日：2005-04-21
申请号：US10985045
申请日：2004-11-10
CPC分类号： G11B5/7325 , G11B5/66 , Y10S428/90 , Y10T428/1121 , Y10T428/12465 , Y10T428/12854 , Y10T428/12861
摘要： It is an object of the present invention to provide a high reliability magnetic storage apparatus capable of performing writing and reading back of high density information. The magnetic storage apparatus is so configured as to have a longitudinal magnetic recording medium including: a magnetic layer formed on a non-magnetic substrate via a plurality of underlayers; the magnetic layer including a lower magnetic layer containing Ru in an amount of not less than 3 at % to not more than 30 at %, and Cr in an amount of not less than 0 at % to not more than 18 at %, and further containing at least one of B or C in an amount of not less than 0 at % to not more than 20 at %, and an upper magnetic layer containing Co as a main component disposed thereon via a non-magnetic intermediate layer.
摘要翻译： 本发明的目的是提供一种能够执行高密度信息的写入和读回的高可靠性磁存储装置。 磁存储装置被配置为具有纵向磁记录介质，其包括：通过多个底层在非磁性基板上形成的磁性层; 所述磁性层包括含有不小于3原子％至不超过30原子％的量的Ru的下磁性层，并且不少于0原子％至不大于18原子％的Cr， 含有不小于0at％至不超过20at％的B或C中的至少一个，以及经由非磁性中间层设置在其上的Co作为主要成分的上磁性层。
-
公开(公告)号：US20050058854A1
公开(公告)日：2005-03-17
申请号：US10875601
申请日：2004-06-25
摘要： Disclosed here is a perpendicular magnetic recording medium for realizing a high media S/N value without degrading the magnetic isolation of crystal grains from each another. The perpendicular magnetic recording medium comprises a substrate, a soft magnetic underlayer formed on the substrate, an intermediate layer formed on the soft magnetic underlayer, and a magnetic recording layer formed on the intermediate layer. The intermediate layer consists of at least two or more layers and contains Ru or an Ru alloy and the magnetic recording layer is made of a material containing a CoCrPt alloy and oxygen. The crystallo graphic orientation of the recording layer can be improved enough without increasing the crystal grain size if a full width at half-maximum Δθ50 of the Rocking curves of the Ru (0002) diffraction peak measured by an X-ray diffraction method is 5° and under.
摘要翻译： 这里公开的是用于实现高介质S / N值而不降低晶粒的磁隔离的垂直磁记录介质。 垂直磁记录介质包括基板，形成在基板上的软磁性底层，形成在软磁性底层上的中间层和形成在中间层上的磁记录层。 中间层由至少两层或更多层组成，并含有Ru或Ru合金，磁记录层由含有CoCrPt合金和氧的材料制成。 如果通过X射线衍射法测量的Ru（0002）衍射峰的摇摆曲线的半最大值Deltatheta50的全宽为5°，则记录层的结晶图形取向可以足够改善，而不增加晶粒尺寸 和下。
-
73.发明授权Image processing apparatus capable of properly determining density of a background portion 失效能够适当地确定背景部分的浓度的图像处理装置
公开(公告)号：US5926579A
公开(公告)日：1999-07-20
申请号：US561557
申请日：1995-11-21
申请人： Hiroyoshi Uejo , Yoshiyuki Hirayama
发明人： Hiroyoshi Uejo , Yoshiyuki Hirayama
CPC分类号： H04N1/403 , H04N1/4072
摘要： Density data produced by an image reading unit is input to a surface density detection unit, which detects a surface density by averaging density data of pixels within a predetermined density range. A period setting unit sets a period of sampling density data of pixels to be used for calculation of the surface density. A surface reference density generation unit generates a surface reference density by adding an offset to the detected surface density. A surface color elimination unit corrects density data of a pixel lower than the surface reference density to the white level to eliminate a surface color.
摘要翻译： 由图像读取单元产生的密度数据被输入到表面密度检测单元，其通过对预定浓度范围内的像素的浓度数据求平均值来检测表面密度。 周期设定单元设定要用于计算表面密度的像素的采样密度数据的周期。 表面参考密度生成单元通过向所检测的表面密度添加偏移来生成表面参考密度。 表面颜色消除单元将低于表面参考密度的像素的密度数据校正为白色水平以消除表面颜色。
-
74.发明授权Method and apparatus for detecting islanding operation of dispersed generator 失效用于检测分散发电机孤岛运行的方法和装置
公开(公告)号：US5808449A
公开(公告)日：1998-09-15
申请号：US655817
申请日：1996-05-31
申请人： Yoshiyuki Hirayama , Nobuhiro Kuroda , Takaaki Kai , Toshiaki Fujimoto , Haruo Sasaki , Yasutomo Imai , Jun Motohashi , Hirotoshi Kaneda
发明人： Yoshiyuki Hirayama , Nobuhiro Kuroda , Takaaki Kai , Toshiaki Fujimoto , Haruo Sasaki , Yasutomo Imai , Jun Motohashi , Hirotoshi Kaneda
CPC分类号： H02J3/46 , H02J2003/388 , Y10T307/664
摘要： A method for detecting islanding operation of a rotating-machine type dispersed generator. The dispersed generator is interconnected with a main electric source through a circuit breaker to constitute an electric power system. The estimating method is implemented as follows: (a) changing electric power of the electric power system; (b) detecting frequency component of the electric power; and (c) deciding that an islanding operation of the dispersed generator is executed if the change of the frequency component becomes greater than a predetermined value. With this method, it becomes possible to detect the islanding operation of the dispersed generator even if the power flow at the interconnecting circuit breaker is generally zero.
摘要翻译： 一种用于检测旋转机型分散式发电机的孤岛操作的方法。 分散式发电机通过断路器与主电源互连，构成电力系统。 估算方法如下：（a）改变电力系统的电力; （b）检测电力的频率分量; 以及（c）如果频率分量的变化变得大于预定值，则决定执行分散发电机的孤岛作用。 利用这种方法，即使互连断路器的功率流通常为零，也可以检测分散发电机的孤岛作用。
-
75.发明授权Strained superlattice semiconductor photodetector having a side contact structure 失效具有侧接触结构的应变超晶格半导体光电探测器
公开(公告)号：US5608230A
公开(公告)日：1997-03-04
申请号：US290918
申请日：1994-11-18
IPC分类号： H01L31/0352 , H01L31/108 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/108 , H01L31/1085
摘要： There is provided an MSM type semiconductor photodetector having a strained superlattice structure that shows a high responsiveness and, at the same time, a reduced dark current. Such a strained superlattice semiconductor photodetector comprising semiconductor layers including a photodetective layer having an intra-planar compressive strain type strained superlattice layer formed on a semiconductor substrate by epitaxial growth is characterized in that the epitaxially grown layers are partly removed from the side walls of the semiconductor layers to produce cut-out sections (grooves 8a, 8b) and arranging electrodes in said cut-out sections respectively. Consequently, the fast responsiveness of the semiconductor photodetector is remarkably improved and the dark current of the device is greatly reduced.
摘要翻译： PCT No.PCT / JP93 / 01848 Sec。 371日期：1994年11月18日 102（e）1994年11月18日日期PCT 1993年12月21日PCT公布。 公开号WO94 / 15367 日期1994年7月7日提供了具有应变超晶格结构的MSM型半导体光电检测器，其显示出高响应性，同时具有降低的暗电流。 这种包含半导体层的超晶格半导体光电探测器包括通过外延生长在半导体衬底上形成的具有面内压应变型应变超晶格层的光电探测层，其特征在于外延生长层从半导体的侧壁部分去除 层以产生切口部分（凹槽8a，8b）并且分别在所述切口部分中布置电极。 因此，半导体光电检测器的快速响应性显着提高，并且器件的暗电流大大降低。
-
76.发明授权Schottky junction device having a Schottky junction of a semiconductor and a metal 失效具有半导体和金属的肖特基结的肖特基结器件
公开(公告)号：US5572043A
公开(公告)日：1996-11-05
申请号：US441640
申请日：1995-05-15
IPC分类号： H01L29/47 , H01L29/872 , H01L31/0352 , H01L31/108 , H01L29/06 , H01L27/095 , H01L31/0328
CPC分类号： B82Y20/00 , H01L29/475 , H01L29/872 , H01L31/035236 , H01L31/108
摘要： To provide a Schottky junction device having a super-lattice arranged in the Schottky interface in order to secure a high Schottky barrier and at the same time showing a high speed response by resolving the phenomenon of piled-up holes at the upper edge of the valence band, while maintaining the height of the Schottky barrier. A Schottky junction device having a Schottky junction of a semiconductor and a metal and a superlattice on the interface of the semiconductor and the metal, wherein the upper edge of the valence band of said superlattice is varied to show a turn to a specific direction. The phenomenon of hole-piling up at the upper end of the valence band is resolved while maintaining the height of the Schottky barrier and consequently such a Schottky junction device shows an excellent high speed response.
摘要翻译： 为了提供肖特基接合器件，其具有布置在肖特基界面中的超晶格，以便确保高肖特基势垒，并且同时通过解析化合价上边缘堆积孔的现象而显示高速响应 同时保持肖特基屏障的高度。 肖特基结器件，其在半导体和金属的界面上具有半导体和金属的肖特基结以及超晶格，其中所述超晶格的价带的上边缘变化以显示向特定方向的转弯。 在保持高电平肖特基势垒的同时，在价带上端的空穴堆叠现象得以解决，因此这种肖特基结器件显示出极佳的高速响应。
-
公开(公告)号：US5557508A
公开(公告)日：1996-09-17
申请号：US160186
申请日：1993-12-02
申请人： Teruhiro Sato , Tomio Wada , Yoshiyuki Hirayama
发明人： Teruhiro Sato , Tomio Wada , Yoshiyuki Hirayama
CPC分类号： H05K9/0049 , H05K3/3405 , H05K3/3447 , H05K2201/10371 , H05K2201/10871 , H05K2201/10924 , Y10S174/34 , Y10T29/49128
摘要： Single flat metal sheet blank in which thin metallic parts including side frames which are to form side walls, a shield plate and external lead and the like are connected together in a developed state in positional relationships necessary for the assembly of the high-density circuit module. A circuit board is then placed on one side of the shield plate of the flat metal sheet blank. Terminals having pedestals are formed on the shield plate. The terminals are inserted into holes formed in the circuit board and connected to conductors on the circuit board. Then, operations such as severance or bending are effected on selected connecting portions at which the thin metallic parts arranged in developed state are inter-connected, and required processings are executed on the portions to be jointed, whereby the circuit module is completed. According to this production method, a space for receiving circuit components is formed between the circuit board and the shield plate, so that both sides of the circuit board can be used for mounting the circuit components, whereby a high packaging density is attained.
摘要翻译： 单层扁平金属板坯料，其中包括形成侧壁的侧框架的薄金属部件，屏蔽板和外部引线等在显影状态下以高密度电路模块组装所需的位置关系连接在一起 。 然后将电路板放置在平板金属板坯的屏蔽板的一侧上。 具有基座的端子形成在屏蔽板上。 将端子插入形成在电路板中的孔中并连接到电路板上的导体。 然后，在选择的连接部分进行诸如切断或弯曲的操作，其中布置成展开状态的薄金属部件相互连接，并且在待连接部分上执行所需的处理，从而完成电路模块。 根据该制造方法，在电路基板和屏蔽板之间形成有用于接收电路部件的空间，从而电路板的两侧可用于安装电路部件，从而获得高的封装密度。
-
公开(公告)号：US4460270A
公开(公告)日：1984-07-17
申请号：US404740
申请日：1982-08-03
IPC分类号： G03B27/72 , G03G15/04 , G03G15/043 , G03G21/00 , G03G15/00
CPC分类号： G03G15/043
摘要： An automatic exposure control method for a photocopying machine is disclosed herein. A sensor is periodically interposed in the light path of the photocopier, which samples the intensity of the light produced by the light producing system. This intensity is compared with a signal representative of the optimum light intensity for the photosensitive drum, and the light source is controlled by inputting the resulting intensity control signal to a voltage regulated light source control device.
摘要翻译： 本文公开了一种复印机的自动曝光控制方法。 传感器周期地插入复印机的光路中，该光路对由光产生系统产生的光的强度进行采样。 将该强度与表示感光鼓的最佳光强度的信号进行比较，并且通过将所得到的强度控制信号输入到电压调节光源控制装置来控制光源。
-
-
-
-
-
-
-
搜索结果
78 条记录 (耗时 0.03 秒)