公开(公告)号：US20100246244A1

公开(公告)日：2010-09-30

申请号：US12748785

申请日：2010-03-29

申请人： Naoharu SHIMOMURA ,  Eiji Kitagawa ,  Sumio Ikegawa ,  Yoshihisa Iwata

发明人： Naoharu SHIMOMURA ,  Eiji Kitagawa ,  Sumio Ikegawa ,  Yoshihisa Iwata

IPC分类号： G11C11/00 ,  G11C7/00 ,  G11C7/10

CPC分类号： G11C11/1673 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693

摘要： A magnetoresistive effect memory of an aspect of the present invention including a magnetoresistive effect element including a first magnetic layer having an invariable magnetization direction, a second magnetic layer having a variable magnetization direction, and an interlayer provided between the first magnetic layer and the second magnetic layer, and a reading circuit which passes a pulse-shaped read current through the magnetoresistive effect element to read data stored in the magnetoresistive effect element, wherein the pulse width of the read current is shorter than a period from an initial state to a cooperative coherent precession movement of magnetizations included in the second magnetic layer.

摘要翻译： 本发明的磁阻效应存储器包括磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层，以及设置在第一磁性层和第二磁性层之间的中间层 以及读取电路，其使脉冲形读取电流通过磁阻效应元件以读取存储在磁阻效应元件中的数据，其中读取电流的脉冲宽度短于从初始状态到协作相干的周期 包括在第二磁性层中的磁化的进动运动。

公开(公告)号：US20100172189A1

公开(公告)日：2010-07-08

申请号：US12620986

申请日：2009-11-18

申请人： Kiyotaro Itagaki ,  Yoshihisa Iwata ,  Hiroyasu Tanaka ,  Masaru Kidoh ,  Masaru Kito ,  Ryota Katsumata ,  Hideaki Aochi ,  Akihiro Nitayama ,  Takashi Maeda ,  Tomoo Hishida

发明人： Kiyotaro Itagaki ,  Yoshihisa Iwata ,  Hiroyasu Tanaka ,  Masaru Kidoh ,  Masaru Kito ,  Ryota Katsumata ,  Hideaki Aochi ,  Akihiro Nitayama ,  Takashi Maeda ,  Tomoo Hishida

IPC分类号： G11C16/04 ,  G11C7/06

CPC分类号： G11C16/0483 ,  G11C16/08 ,  G11C16/16 ,  G11C16/26 ,  G11C16/30

摘要： A non-volatile semiconductor storage device includes: a memory string including a plurality of memory cells connected in series; a first selection transistor having one end connected to one end of the memory string; a first wiring having one end connected to the other end of the first selection transistor; a second wiring connected to a gate of the first selection transistor. A control circuit is configured to boost voltages of the second wiring and the first wiring in the erase operation, while keeping the voltage of the first wiring greater than the voltage of the second wiring by a certain potential difference. The certain potential difference is a potential difference that causes a GIDL current.

摘要翻译： 非易失性半导体存储装置包括：包括串联连接的多个存储单元的存储串; 第一选择晶体管，其一端连接到存储器串的一端; 第一布线，其一端连接到第一选择晶体管的另一端; 连接到第一选择晶体管的栅极的第二布线。 控制电路被配置为在保持第一布线的电压大于第二布线的电压一定电位差的同时，在擦除操作中提高第二布线和第一布线的电压。 一定的电位差是导致GIDL电流的电位差。

公开(公告)号：US07649792B2

公开(公告)日：2010-01-19

申请号：US11749412

申请日：2007-05-16

申请人： Yoshihiro Ueda ,  Yoshihisa Iwata ,  Toshiaki Edahiro ,  Toshihiro Suzuki

发明人： Yoshihiro Ueda ,  Yoshihisa Iwata ,  Toshiaki Edahiro ,  Toshihiro Suzuki

IPC分类号： G11C7/02

CPC分类号： G11C7/065 ,  G11C7/062 ,  G11C7/12 ,  G11C11/1673 ,  G11C16/0491 ,  G11C16/26 ,  G11C17/126 ,  G11C2207/002 ,  G11C2207/063

摘要： A sense amplifier according to an example of the present invention has first, second, third and fourth FETs with a flip-flop connection. A drain of a fifth FET is connected to a first input node, and its source is connected to a power source node. A drain of a sixth FET is connected to a second input node, and its source is connected to the power source node. A sense operation is started by charging a first output node from the first input node with a first current and by charging a second output node from the second input node with a second current. The fifth and sixth FET are turned on after starting the sense operation.

摘要翻译： 根据本发明的示例的读出放大器具有触发器连接的第一，第二，第三和第四FET。 第五FET的漏极连接到第一输入节点，并且其源极连接到电源节点。 第六FET的漏极连接到第二输入节点，其源极连接到电源节点。 通过用第一电流从第一输入节点充电第一输出节点并且通过用第二电流从第二输入节点充电第二输出节点来开始感测操作。 开始感测操作后，第五和第六FET导通。

公开(公告)号：US20090242968A1

公开(公告)日：2009-10-01

申请号：US12408183

申请日：2009-03-20

申请人： Takashi MAEDA ,  Yoshihisa Iwata

发明人： Takashi MAEDA ,  Yoshihisa Iwata

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L23/528 ,  H01L23/5226 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a nonvolatile semiconductor memory device, a stacked body is formed by alternately stacking dielectric films and conductive films on a silicon substrate and a plurality of through holes extending in the stacking direction are formed in a matrix configuration. A shunt interconnect and a bit interconnect are provided above the stacked body. Conductor pillars are buried inside the through holes arranged in a line immediately below the shunt interconnect out of the plurality of through holes, and semiconductor pillars are buried inside the remaining through holes. The conductive pillars are formed from a metal, or low resistance silicon. Its upper end portion is connected to the shunt interconnect and its lower end portion is connected to a cell source formed in an upper layer portion of the silicon substrate.

摘要翻译： 在非易失性半导体存储器件中，通过在硅衬底上交替堆叠电介质膜和导电膜来形成层叠体，并且以矩阵形式形成沿堆叠方向延伸的多个通孔。 分路互连和位互连设置在堆叠体的上方。 导体支柱埋设在多个通孔中的分流互连的正下方配置的贯通孔的内侧，半导体柱埋设在剩余通孔的内部。 导电柱由金属或低电阻硅形成。 其上端部连接到分路互连，并且其下端部连接到形成在硅衬底的上层部分中的电池源。

公开(公告)号：US07525837B2

公开(公告)日：2009-04-28

申请号：US12019657

申请日：2008-01-25

申请人： Tadashi Kai ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Yoshiaki Fukuzumi ,  Yoshihisa Iwata

发明人： Tadashi Kai ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Yoshiaki Fukuzumi ,  Yoshihisa Iwata

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/16 ,  H01L27/222

摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.

摘要翻译： 磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。 参考层设置在第一表面上并具有固定的磁化方向。 磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。 矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。 第一突出部从第一长边突出的位置从中心向第一短边移动。 第二突出部从第二长边突出的位置从中心向第二短边移动。

公开(公告)号：US07511991B2

公开(公告)日：2009-03-31

申请号：US11750856

申请日：2007-05-18

申请人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi ,  Yoshihisa Iwata

发明人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi ,  Yoshihisa Iwata

IPC分类号： G11C11/00 ,  G11C11/14

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/16 ,  H01L43/08

摘要： A spin-injection magnetic random access memory according to an embodiment of the invention includes a magnetoresistive element having a magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer provided between the magnetic fixed layer and the magnetic recording layer, a bit line which passes spin-injection current through the magnetoresistive element, the spin-injection current being used for generation of the spin-polarized electrons, a writing word line through which assist current is passed, the assist current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element, and a driver/sinker which determines a direction of the spin-injection current and a direction of the assist current.

摘要翻译： 根据本发明实施例的自旋注入磁随机存取存储器包括具有磁化方向固定的磁固定层的磁阻元件，其磁化方向可以通过注入自旋极化电子而改变的磁记录层，以及隧道 设置在磁性固定层和磁记录层之间的阻挡层，使自旋注入电流通过磁阻元件的位线，用于产生自旋极化电子的自旋注入电流，写入字线， 辅助电流通过，辅助电流用于在磁阻元件的易磁化易磁化方向上产生辅助磁场，以及确定自旋注入电流的方向和驱动器/ 协助电流

公开(公告)号：US20080261331A1

公开(公告)日：2008-10-23

申请号：US11935923

申请日：2007-11-06

申请人： Yoshihisa Iwata ,  Yoshiaki Fukuzumi ,  Tadashi Kai

发明人： Yoshihisa Iwata ,  Yoshiaki Fukuzumi ,  Tadashi Kai

IPC分类号： H01L21/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic memory device comprising, a magneto-resistance effect element that is provided at an intersection between a first write line and a second write line. And the magneto-resistance effect element having, an easy axis that extends in a direction of extension of the first write line, and a first conductive layer for electrical connection to the magneto-resistance effect element, the first conductive layer having sides which are in flush with sides of the magneto-resistance effect element.

摘要翻译： 一种磁存储器件，包括：设置在第一写入线和第二写入线之间的交叉点处的磁阻效应元件。 并且，所述磁阻效应元件具有沿所述第一写入线的延伸方向延伸的容易轴和用于与所述磁阻效应元件电连接的第一导电层，所述第一导电层具有位于 与磁阻效应元件的两侧齐平。

公开(公告)号：US07376003B2

公开(公告)日：2008-05-20

申请号：US10465616

申请日：2003-06-20

申请人： Yoshihisa Iwata ,  Yoshiaki Asao ,  Kentaro Nakajima

发明人： Yoshihisa Iwata ,  Yoshiaki Asao ,  Kentaro Nakajima

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic field H1 in the hard-axis direction and a magnetic field H2 in the easy-axis direction are caused to simultaneously act on a MTJ element having an ideal asteroid curve, thereby reversing the magnetizing direction of the storing layer of the MTJ element. When the actual asteroid curve shifts in the hard-axis direction by Ho, a corrected synthesized magnetic field ({right arrow over (H1)}+{right arrow over (H2)}+{right arrow over (Ho)}) is generated in write operation to reliably reverse the magnetizing direction. The corrected synthesized magnetic field can easily be generated by individually controlling a write word/bit line current on the basis of programmed setting data.

摘要翻译： 使硬轴方向的磁场H 1和易轴方向的磁场H 2同时作用于具有理想的小行星曲线的MTJ元件，从而使MTJ的存储层的磁化方向反转 元件。 当实际的小行星曲线在硬轴方向上移动Ho时，产生校正的合成磁场（{H 1}} + {右箭头（H 2）} +（向右箭头（Ho））上的右箭头 在写入操作中可靠地反转磁化方向，通过基于编程的设置数据单独地控制写入字/位线电流，可以容易地产生校正的合成磁场。

公开(公告)号：US07292468B2

公开(公告)日：2007-11-06

申请号：US11194534

申请日：2005-08-02

申请人： Yoshihisa Iwata

发明人： Yoshihisa Iwata

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic random access memory includes a first magnetoresistive element which is used as a memory element, and a second magnetoresistive element which is used as a current load of a read bias circuit.

摘要翻译： 磁性随机存取存储器包括用作存储元件的第一磁阻元件和用作读偏置电路的电流负载的第二磁阻元件。

公开(公告)号：US20060118842A1

公开(公告)日：2006-06-08

申请号：US11037108

申请日：2005-01-19

申请人： Yoshihisa Iwata

发明人： Yoshihisa Iwata

IPC分类号： H01L29/94

CPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic random access memory according to an example of the present invention comprises a magnetoresistive element, a write line for use in generation of a magnetic field for data writing with respect to the magnetoresistive element, and a strained layer which is disposed so as to correspond to the magnetoresistive element, and which has a function of being physically deformed at the time of data writing, and of controlling a magnitude of an switching magnetic field of the magnetoresistive element.

摘要翻译： 根据本发明的示例的磁性随机存取存储器包括磁阻元件，用于产生相对于磁阻元件的数据写入的磁场的写入线，以及被配置为对应于的应变层 并且具有在数据写入时物理变形的功能，并且控制磁阻元件的开关磁场的大小。