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87 条记录 (耗时 0.03 秒)

    Chemically amplified resist
    71.
    发明授权
    Chemically amplified resist 失效
    化学放大抗蚀剂

    公开(公告)号：US06251558B1

    公开(公告)日：2001-06-26

    申请号：US09065010

    申请日：1998-04-23

    申请人： Klaus Elian ,  Rainer Leuschner ,  Ewald Guenther

    发明人： Klaus Elian ,  Rainer Leuschner ,  Ewald Guenther

    IPC分类号： G06F7004

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/111 ,  Y10S430/116 ,  Y10S430/127

    摘要： A chemically amplified resist contains the following components: a polymer with carboxylic acid anhydride groups and tert-butylester, tert-butoxycarbonyloxy, tetrahydrofuranyl, or tetrahydropyranyl groups; a photoreactive compound which, when exposed or electron-irradiated, releases a sulfonic acid having a pKa value>0.5 (acid former); a compound that can enter into a reversible chemical reaction with the sulfonic acid (buffer compound); and a solvent.

    摘要翻译： 化学增幅抗蚀剂包含以下组分：具有羧酸酐基团的聚合物和叔丁基酯，叔丁氧羰基氧基，四氢呋喃基或四氢吡喃基;光反应性化合物，当暴露或电子辐照时，释放具有pKa 值> 0.5（酸成分）;可与磺酸（缓冲剂化合物）进行可逆化学反应的化合物; 和溶剂。

    Chemically amplified resist
    72.
    发明授权
    Chemically amplified resist 有权
    化学放大抗蚀剂

    公开(公告)号：US06171755B2

    公开(公告)日：2001-01-09

    申请号：US09201728

    申请日：1998-11-30

    申请人： Klaus Elian ,  Ewald G{umlaut over (u)}nther ,  Rainer Leuschner

    发明人： Klaus Elian ,  Ewald G{umlaut over (u)}nther ,  Rainer Leuschner

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/0758 ,  G03F7/405 ,  Y10S430/127

    摘要： A chemically amplified resist for electron beam lithography contains the following components: a polymer with dissolution-inhibiting groups that can be cleaved with acid catalysis, a photo-reactive compound, which upon electron irradiation releases a sulfonic acid with a pKa value ≦2.5 (photo acid generator), an electron-beam-sensitive sensitizer enhancing the exposure sensitivity of the resist, such as a fluorene derivative, and a solvent.

    摘要翻译： 用于电子束光刻的化学放大抗蚀剂包含以下组分：具有可用酸催化裂解的溶解抑制基团的聚合物，光电反应性化合物，其在电子照射下释放pKa值<= 2.5的磺酸（ 光产酸剂），增强抗蚀剂如芴衍生物和溶剂的曝光灵敏度的电子束敏感敏化剂。

    MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations
    75.
    发明授权
    MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations 有权
    采用热辅助写入操作和热辅助自参考操作的MRAM器件结构

    公开(公告)号：US08310866B2

    公开(公告)日：2012-11-13

    申请号：US12168671

    申请日：2008-07-07

    申请人： Rainer Leuschner ,  Ulrich Klostermann ,  Richard Ferrant

    发明人： Rainer Leuschner ,  Ulrich Klostermann ,  Richard Ferrant

    IPC分类号： G11C11/02 ,  G11C7/00 ,  H01L21/00

    CPC分类号： G11C7/04 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： A thermally-assisted MRAM structure which is programmable at a writing mode operating temperature is presented and includes an anti-ferromagnet, an artificial anti-ferromagnet, a barrier layer, and a free magnetic layer. The anti-ferromagnet is composed of a material having a blocking temperature Tb which is lower than the writing mode operating temperature of the magnetic random access memory structure. The artificial anti-ferromagnet is magnetically coupled to the anti-ferromagnet, and includes first and second magnetic layers, and a coupling layer interposed therebetween, the first and second magnetic layers having different Curie point temperatures. The barrier layer is positioned to be between the second magnetic layer and the free magnetic layer.

    摘要翻译： 提出了一种在写入模式工作温度下可编程的热辅助MRAM结构，其包括反铁磁体，人造抗铁磁体，阻挡层和自由磁性层。 抗铁磁体由具有比磁性随机存取存储器结构的写入模式工作温度低的阻挡温度Tb的材料构成。 人造抗铁磁体磁耦合到抗铁磁体，并且包括第一和第二磁性层以及插入其间的耦合层，第一和第二磁性层具有不同的居里点温度。 阻挡层被定位在第二磁性层和自由磁性层之间。

    Integrated circuit, memory cell array, memory module, and method of operating an integrated circuit
    76.
    发明授权
    Integrated circuit, memory cell array, memory module, and method of operating an integrated circuit 有权
    集成电路，存储单元阵列，存储器模块和操作集成电路的方法

    公开(公告)号：US07903454B2

    公开(公告)日：2011-03-08

    申请号：US12114466

    申请日：2008-05-02

    申请人： Dietmar Gogl ,  Rainer Leuschner ,  Ulrich Klostermann

    发明人： Dietmar Gogl ,  Rainer Leuschner ,  Ulrich Klostermann

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675 ,  G11C11/1659

    摘要： According to one embodiment of the present invention, an integrated circuit includes a plurality of thermal selectable memory cells, each memory cell being connected to a conductive line, the conductive line having a first portion for applying a heating current, and a second portion for applying a programming current. The integrated circuit is configured such that the heating current and the programming current can be routed respectively to the first and the second portion of the conductive line independently from each other.

    摘要翻译： 根据本发明的一个实施例，集成电路包括多个热可选择存储单元，每个存储单元连接到导电线，该导线具有用于施加加热电流的第一部分和用于施加加热电流的第二部分 编程电流。 集成电路被配置为使得加热电流和编程电流可以彼此独立地分别路由到导线的第一和第二部分。

    Method for Programming an Integrated Circuit, Methods for Programming a Plurality of Cells, Integrated Circuit, Cell Arrangement
    78.
    发明申请
    Method for Programming an Integrated Circuit, Methods for Programming a Plurality of Cells, Integrated Circuit, Cell Arrangement 失效
    集成电路编程方法，多个单元编程方法，集成电路，单元布置

    公开(公告)号：US20090073750A1

    公开(公告)日：2009-03-19

    申请号：US11856665

    申请日：2007-09-17

    申请人： Rainer Leuschner

    发明人： Rainer Leuschner

    IPC分类号： G11C11/4197

    CPC分类号： G11C5/02 ,  G11C11/1675

    摘要： Embodiment of the invention provide a method for programming an integrated circuit, methods for programming a plurality of cells, an integrated circuit, and a cell arrangement. An embodiment of the invention provides a method for programming an integrated circuit having a plurality of cells. The method includes grouping the plurality of cells into a first group of cells and a second group of cells depending on the cell state the cells should be programmed with. The first group of cells and the second group of cells each having a plurality of cells. The method further includes concurrently programming the cells of the first group of cells with a first cell state. After having programmed the cells of the first group of cells, the cells of the second group of cells are concurrently programmed with a second cell state, which is different from the first cell state.

    摘要翻译： 本发明的实施例提供了一种用于编程集成电路的方法，用于编程多个单元的方法，集成电路和单元布置。 本发明的实施例提供了一种用于编程具有多个单元的集成电路的方法。 该方法包括根据细胞应该编程的细胞状态将多个细胞分组成第一组细胞和第二组细胞。 第一组细胞和第二组细胞各自具有多个细胞。 该方法还包括以第一单元状态同时编程第一组单元的单元。 在编程了第一组单元的单元之后，第二组单元的单元同时被编程为与第一单元状态不同的第二单元状态。

    MRAM cell using multiple axes magnetization and method of operation
    80.
    发明申请
    MRAM cell using multiple axes magnetization and method of operation 失效
    MRAM单元采用多轴磁化和操作方法

    公开(公告)号：US20070297222A1

    公开(公告)日：2007-12-27

    申请号：US11474080

    申请日：2006-06-23

    申请人： Rainer Leuschner

    发明人： Rainer Leuschner

    IPC分类号： G11C11/00 ,  G11C11/14

    CPC分类号： G11C11/15 ,  G11C11/1675 ,  H01L43/08

    摘要： A magnetic random access memory cell includes a free layer structure and a reference layer structure including an anti-ferromagnetic layer structure pinning the magnetization orientation of the reference layer structure, the reference layer structure having a higher magnetic coercivity and being magnetically polarizable bidirectional and parallel to more than one axes by a magnetic field applied during a writing procedure so as to store information in the reference layer structure while heating the anti-ferromagnetic layer structure above its blocking temperature.

    摘要翻译： 磁性随机存取存储单元包括自由层结构和参考层结构，该参考层结构包括固定参考层结构的磁化取向的抗铁磁层结构，参考层结构具有较高的磁矫顽力并且可双向磁化并且平行于 在写入过程期间施加磁场的多于一个轴，以将信息存储在参考层结构中，同时将反铁磁层结构加热到其阻挡温度以上。