Chemically amplified resist
    1.
    发明授权
    Chemically amplified resist 有权
    化学放大抗蚀剂

    公开(公告)号:US06171755B2

    公开(公告)日:2001-01-09

    申请号:US09201728

    申请日:1998-11-30

    IPC分类号: G03F7004

    摘要: A chemically amplified resist for electron beam lithography contains the following components: a polymer with dissolution-inhibiting groups that can be cleaved with acid catalysis, a photo-reactive compound, which upon electron irradiation releases a sulfonic acid with a pKa value ≦2.5 (photo acid generator), an electron-beam-sensitive sensitizer enhancing the exposure sensitivity of the resist, such as a fluorene derivative, and a solvent.

    摘要翻译: 用于电子束光刻的化学放大抗蚀剂包含以下组分:具有可用酸催化裂解的溶解抑制基团的聚合物,光电反应性化合物,其在电子照射下释放pKa值<= 2.5的磺酸( 光产酸剂),增强抗蚀剂如芴衍生物和溶剂的曝光灵敏度的电子束敏感敏化剂。

    Chemically amplified resist
    2.
    发明授权
    Chemically amplified resist 失效
    化学放大抗蚀剂

    公开(公告)号:US06251558B1

    公开(公告)日:2001-06-26

    申请号:US09065010

    申请日:1998-04-23

    IPC分类号: G06F7004

    摘要: A chemically amplified resist contains the following components: a polymer with carboxylic acid anhydride groups and tert-butylester, tert-butoxycarbonyloxy, tetrahydrofuranyl, or tetrahydropyranyl groups; a photoreactive compound which, when exposed or electron-irradiated, releases a sulfonic acid having a pKa value>0.5 (acid former); a compound that can enter into a reversible chemical reaction with the sulfonic acid (buffer compound); and a solvent.

    摘要翻译: 化学增幅抗蚀剂包含以下组分:具有羧酸酐基团的聚合物和叔丁基酯,叔丁氧羰基氧基,四氢呋喃基或四氢吡喃基;光反应性化合物,当暴露或电子辐照时,释放具有pKa 值> 0.5(酸成分);可与磺酸(缓冲剂化合物)进行可逆化学反应的化合物; 和溶剂。

    Pressure Sensor and Method
    6.
    发明申请
    Pressure Sensor and Method 有权
    压力传感器和方法

    公开(公告)号:US20110163395A1

    公开(公告)日:2011-07-07

    申请号:US12651623

    申请日:2010-01-04

    IPC分类号: H01L29/84 H01L21/78

    摘要: A method for providing a pressure sensor substrate comprises creating a first cavity that extends inside the substrate in a first direction perpendicular to a main surface of the substrate, and that extends inside the substrate, in a second direction perpendicular to the first direction, into a first venting area of the substrate; creating a second cavity that extends in the first direction inside the substrate, that extends in parallel to the first cavity in the second direction, and that does not extend into the first venting area; and opening the first cavity in the first venting area.

    摘要翻译: 一种用于提供压力传感器基板的方法包括:在垂直于基板的主表面的第一方向上形成在基板内延伸的第一空腔,并且在垂直于第一方向的第二方向上延伸到基板的内部, 基板的第一通气区域; 形成第二空腔,该第二空腔沿第一方向在基板内延伸,该第二空腔在第二方向上平行于第一空腔延伸,并且不延伸到第一排气区域; 并打开第一个通风区域的第一个空腔。

    Resist for forming a structure for aligning an electron or ion beam and technique for forming the structure
    9.
    发明授权
    Resist for forming a structure for aligning an electron or ion beam and technique for forming the structure 有权
    用于形成用于对准电子或离子束的结构的抗蚀剂和用于形成结构的技术

    公开(公告)号:US07160670B2

    公开(公告)日:2007-01-09

    申请号:US10340987

    申请日:2003-01-13

    申请人: Klaus Elian

    发明人: Klaus Elian

    IPC分类号: G03F7/004 G03F7/20

    摘要: A scintillating structure for aligning an electron or ion beam using a detector while exposing a wafer, which may be a wafer or mask, is described. The structure is formed by a resist including a polymer with carboxylic acid groups, anhydride groups, and an acid-sensitive group, for instance tert.-butylester; a photoreactive compound which releases an acid upon irradiation with UV light, electrons, or ions; a solvent; and at least one scintillating substance such as anthracene, naphthaline and/or 1,4-bis-(5-phenyl-2-oxazolyl)-benzol. After a developing and silylating step, the cross-linked structure is inert with respect to solvents of additional resists that are applied over the structure. The scintillating structure is thus not dissolved, which improves the quality of online controlled electron or ion beam writing.

    摘要翻译: 描述了使用检测器对准电子或离子束的闪烁结构,同时暴露可能是晶片或掩模的晶片。 该结构由包含具有羧酸基团的聚合物,酸酐基和酸敏感基团的抗蚀剂形成,例如叔丁基酯; 在紫外线,电子或离子照射时释放酸的光反应性化合物; 溶剂; 和至少一种闪烁物质,例如蒽,萘和/或1,4-双 - (5-苯基-2-恶唑基) - 苯。 在显影和甲硅烷化步骤之后,相对于施加在结构上的附加抗蚀剂的溶剂,交联结构是惰性的。 闪烁结构因此不溶解,这提高了在线控制电子或离子束写入的质量。

    Polymerizable composition, polymer, resist, and process for electron beam lithography
    10.
    发明授权
    Polymerizable composition, polymer, resist, and process for electron beam lithography 失效
    用于电子束光刻的可聚合组合物,聚合物,抗蚀剂和工艺

    公开(公告)号:US06821706B2

    公开(公告)日:2004-11-23

    申请号:US10627906

    申请日:2003-07-25

    IPC分类号: G03F7004

    摘要: A polymerizable composition for use in electron beam lithography, according to the following structural formula: The formula use the following definitions. m is a number from 0.1 to 0.9. n is a number from 0.1 to 0.9 with m+n=1. I is an integer from 1 to 100. R1 is H, an alkyl, a halogen, an amine, a silicon compound, or a germanium compound, having a chain length of up to six carbon, silicon, or germanium atoms. R2 is H, an alkyl, a halogen, an amine, a silicon group, or a germanium compound, having a chain length of up to six carbon, silicon, or germanium atoms. R3 is an organic protective group which can be eliminated. A resist and a process using the resist utilize the polymerizable composition. The use of the polymerizable composition in a resist reduces or prevents charging of a substrate at high exposure sensitivity.

    摘要翻译: 用于电子束光刻的可聚合组合物,根据以下结构式:该式使用以下定义。 m为0.1-0.9的数。 n为0.1〜0.9,m + n = 1。 I是1至100的整数.R 1是H,烷基,卤素,胺,硅化合物或锗化合物,具有多达六个碳,硅或锗原子的链长。 R2是具有至多六个碳,硅或锗原子的链长的H,烷基,卤素,胺,硅基团或锗化合物。 R3是可以除去的有机保护基。 抗蚀剂和使用抗蚀剂的方法利用可聚合组合物。 抗蚀剂中可聚合组合物的使用降低或防止以高曝光灵敏度对基材进行充电。