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241 条记录 (耗时 0.028 秒)

    Device with n-type semiconductor
    72.
    发明授权
    Device with n-type semiconductor 有权
    n型半导体器件

    公开(公告)号：US06861664B2

    公开(公告)日：2005-03-01

    申请号：US10627860

    申请日：2003-07-25

    申请人： Beng S. Ong ,  Dasarao K. Murti ,  James M. Duff ,  Yiliang Wu

    发明人： Beng S. Ong ,  Dasarao K. Murti ,  James M. Duff ,  Yiliang Wu

    IPC分类号： H01L51/05 ,  H01L29/786 ,  H01L51/30 ,  H01L51/00

    CPC分类号： H01L51/0053 ,  H01L51/0044 ,  H01L51/0072 ,  H01L51/0545

    摘要： An electronic device includes a semiconductor layer in contact with a number of electrodes, wherein the semiconductive layer includes a compound wherein either or both of the following geometric isomers of the compound are present: wherein: n is 1, 2 or 3 for the polycyclic moiety; and R1 and R2 are independently selected from the group consisting of a hydrocarbon ring and a heterocyclic group, wherein R1 and R2 are the same or different hydrocarbon ring, the same or different heterocyclic group, or one of R1 and R2 is the hydrocarbon ring and the other the heterocyclic group.

    摘要翻译： 电子器件包括与多个电极接触的半导体层，其中半导体层包括其中存在化合物的以下几何异构体之一或两者的化合物：其中：对于多环部分，n为1,2或3 ; R 1和R 2独立地选自烃环和杂环基，其中R 1和R 2是相同或不同的烃环，相同或不同的杂环基，或者R 1和R 2中的一个是烃环和 其他杂环基。

    Poly[bis(ethynyl)heteroacene]s and electronic devices generated therefrom
    75.
    发明授权
    Poly[bis(ethynyl)heteroacene]s and electronic devices generated therefrom 有权
    聚[双（乙炔基）异亚丙基]和由其生成的电子器件

    公开(公告)号：US07994497B2

    公开(公告)日：2011-08-09

    申请号：US12253565

    申请日：2008-10-17

    申请人： Yuning Li ,  Ping Liu ,  Yiliang Wu ,  Beng S. Ong

    发明人： Yuning Li ,  Ping Liu ,  Yiliang Wu ,  Beng S. Ong

    IPC分类号： H01L51/00

    CPC分类号： H01L51/0074 ,  H01L51/0036 ,  H01L51/0073 ,  H01L51/0545

    摘要： An electronic device comprising a polymer of Formula or Structure (I) wherein R1 is hydrogen, halogen, a suitable hydrocarbon, or a heteroatom containing group; R2 is hydrogen, a suitable hydrocarbon, a heteroatom containing group, or a halogen; R3 and R4 are independently a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar is an aromatic component; x, y, a, b, and c represent the number of groups or rings, respectively; Z represents sulfur, oxygen, selenium, or NR wherein R is hydrogen, alkyl, or aryl; and n represents the number of repeating units.

    摘要翻译： 包含式（I）的聚合物的电子器件，其中R 1是氢，卤素，合适的烃或含杂原子的基团; R2是氢，适合的烃，含杂原子的基团或卤素; R 3和R 4独立地为合适的烃，氢，含杂原子的基团或卤素; Ar是芳香族成分; x，y，a，b和c分别表示基团或环的数目; Z表示硫，氧，硒或NR，其中R是氢，烷基或芳基; n表示重复单元的数量。

    Organic thin film transistor with dual layer electrodes
    76.
    发明授权
    Organic thin film transistor with dual layer electrodes 有权
    具有双层电极的有机薄膜晶体管

    公开(公告)号：US07923718B2

    公开(公告)日：2011-04-12

    申请号：US11564438

    申请日：2006-11-29

    申请人： Yiliang Wu ,  Beng S. Ong

    发明人： Yiliang Wu ,  Beng S. Ong

    IPC分类号： H01L29/08

    CPC分类号： H01L51/105 ,  H01L51/0037 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545

    摘要： A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a work function matching the energy level of the semiconductor. The semiconductor has a short channel length.

    摘要翻译： 提供了具有双层源极和漏极的薄膜晶体管（TFT）。 每个源极和漏极包括第一层和第二层。 第一层具有与半导体的能级不同至少0.5eV的功函数，第二层具有与半导体的能级匹配的功函数。 半导体具有短的沟道长度。

    PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS
    79.
    发明申请
    PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS 有权
    相分离电介质结构工艺

    公开(公告)号：US20090234056A1

    公开(公告)日：2009-09-17

    申请号：US12436975

    申请日：2009-05-07

    申请人： Yiliang Wu ,  Hadi K. Mahabadi ,  Beng S. Ong ,  Paul F. Smith

    发明人： Yiliang Wu ,  Hadi K. Mahabadi ,  Beng S. Ong ,  Paul F. Smith

    IPC分类号： C08K5/06 ,  C08K5/05

    CPC分类号： H01L51/052 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

    摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

    摘要翻译： 一种制造电子器件的方法，包括：沉积包含半导体的层; 液体沉积包含低k电介质材料，较高k电介质材料和液体的电介质组合物，其中低k电介质材料和较高k电介质材料在液体沉积之前不相分离; 并引起下部k电介质材料和较高k电介质材料的相分离以形成相分离电介质结构，其中低k电介质材料的浓度高于 绝缘结构最靠近包含半导体的层，其中沉积包含半导体的层在液体沉积电介质组合物之前或之后引起相分离。

    Organic thin film transistors
    80.
    发明授权
    Organic thin film transistors 失效
    有机薄膜晶体管

    公开(公告)号：US07573063B1

    公开(公告)日：2009-08-11

    申请号：US12121148

    申请日：2008-05-15

    申请人： Ping Liu ,  Yiliang Wu ,  Yuning Li ,  Beng S. Ong

    发明人： Ping Liu ,  Yiliang Wu ,  Yuning Li ,  Beng S. Ong

    IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

    CPC分类号： H01L51/0537 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545

    摘要： A thin film transistor having an improved gate dielectric layer is disclosed. The gate dielectric layer comprises a poly(4-vinylphenol-co-acrylonitrile) based polymer. The resulting gate dielectric layer has a high dielectric constant and can be crosslinked. Higher gate dielectric layer thicknesses can be used to prevent current leakage while still having a large capacitance for low operating voltages. Methods for producing such gate dielectric layers and/or thin film transistors comprising the same are also disclosed.

    摘要翻译： 公开了一种具有改进的栅介电层的薄膜晶体管。 栅介电层包含聚（4-乙烯基苯酚 - 共 - 丙烯腈）聚合物。 所得到的栅极介电层具有高的介电常数并可交联。 可以使用更高的栅介质层厚度来防止电流泄漏，同时对于低工作电压仍然具有大的电容。 还公开了用于制造这样的栅介质层和/或包括其的薄膜晶体管的方法。