摘要:
A DRAM is provided at a portion relating to generation of a boosted potential with a filter circuit located between a detector circuit and a ring oscillator for removing a pulse-like change in level from an output signal of the detector circuit. Accordingly, temporary stop of the charge pump circuit can be prevented even when the boosted potential exceeds in a pulse-like manner the reference potential at the vicinity of the output node of the charge pump circuit, and the boosted potential can be rapidly restored to the reference potential.
摘要:
When a tuning mode signal VTUNE is activated, control clock signal TCLK is output, and counter counts up tuning signals TSIG1 to TSIG4. Tuning circuits render conductive the terminals of respective transistors, and reference potential Vref lowers in accordance with the reduction in the resistance value. When reference potential Vref attains equal to the external reference potential Ext.Vref, differential amplifier circuit stops output of the control clock signal TCLK. In accordance with the plurality of the determined tuning signals TSIG1 to TSIG4, fuse elements inside the tuning circuits are programmed.
摘要:
The voltage converting circuit 10 includes a standby VDC, an active VDC which operates when the semiconductor integrated circuit device is activated and has current drivability larger than that of standby VDC, and a drivability control circuit. Drivability control circuit generates a control signal in accordance with operational frequency of the semiconductor integrated circuit device. Current drivability of the active the VDC is controlled in accordance with the operational frequency by the control signal.
摘要:
An internal power supply voltage generation circuit includes a main amplifier that supplies a current from an external power supply node to an internal power supply line in accordance with the difference between a reference voltage from a reference voltage generation circuit and an internal power supply voltage on the internal power supply line. The current supply amount by the main amplifier is adjusted by a level adjust circuit, according to the difference between the external power supply voltage and the reference voltage. The internal power supply voltage generation circuit can suppress reduction in the internal power supply voltage in the vicinity of the lower limit area of the differential power supply voltage.
摘要:
A semiconductor integrated circuit device realizing high speed operation and low current consumption and ensure reliability evaluation is provided. Reference voltage generating circuits for generating reference voltages of mutually different voltage levels are provided for power supply pads respectively, and voltage down converters for down converting power supply voltages of corresponding external power supply pads to corresponding reference voltage levels and transmitting the lowered voltages to corresponding internal power supply lines are provided corresponding to respective reference voltage generating circuits. Further, a switching transistor is provided at an output node of the reference voltage generating circuit which is rendered conductive at a stress acceleration mode for connecting the corresponding external power supply pad to the output node of the corresponding reference voltage generating circuit.
摘要:
An image sensor with a small circuit area is provided. In the image sensor, a TX decoder which generates transfer signals TX includes a latch circuit. The latch circuit is set when a corresponding row group is selected and when a set signal is set to an “H” level, and is reset when a reset signal is set to an “L” level. The latch circuit serves also as a voltage level shift circuit which converts the “H” level of a signal from a first power supply voltage into a second power supply voltage. Therefore, plural row groups can be selected by setting plural latch circuits. It is not necessary to provide a voltage level shift circuit separately.
摘要:
There is provided a solid-state image pickup device including ADCs that can be arranged in a limited space. The potential of a pixel signal outputted through a vertical readout line is held at a node. A plurality of capacitors are capacitively coupled to the node at which the pixel signal is held. The potential of the node is decreased in a stepwise manner by sequentially switching the voltages of the counter electrodes of the capacitors by the control of transistors. A comparator compares the potential of the node with the potential of the dark state of the pixel, and determines the upper bits of a digital value when the potential of the node becomes lower than the potential of the dark state. Following this, the conversion of the lower bits of the digital value is started. Therefore, it is possible to simplify the configuration of each ADC and arrange each ADC in a limited space.
摘要:
The present invention provides a current-limited oscillator capable of performing stable operation even when it is driven with a low power-supply voltage, and a charge pump circuit using the oscillator. A current-limited oscillator has a delay section that includes a plurality of series-connected inverters to delay an output pulse on the basis of a current limiting level indication signal, and the oscillator further includes at least one first transistor that limits a first current between the inverters and a high potential power supply and at least one second transistor that limits a second current between the inverters and a low potential power supply, wherein at least one of the plurality of inverters is configured as a first inverter that is connected with the first transistor and is not connected with the second transistor, and at least another of the plurality of inverters is configured as a second inverter that is not connected with the first transistor and is connected with the second transistor.
摘要:
To obtain a solid state imaging device having a data transfer function capable of outputting digital data after A/D conversion to the outside in a high speed.Each of eight stage data blocks in a data bus part has a data line pair and an amplifier part which is coupled to the data line pair. Then, the amplifier part amplifies a signal of the data line pair on an amplifier data line pair to output the amplified signal as block data outputs at timing indicated by an amplifier enable signal and an amplifier control signal. Further, the eight stage data blocks are coupled with each other from the first stage to the last stage so that the preceding stage block data outputs may be provided to the following stage data line pair as block data inputs, respectively.
摘要:
There is provided a technique which is capable of detecting a temperature of a semiconductor device with high precision. A temperature detection circuit detecting a temperature of a semiconductor device includes a first short-cycle oscillator generating a first clock signal having positive temperature characteristics with respect to a frequency, a second short-cycle oscillator generating a second clock signal having negative temperature characteristics with respect to the frequency, and a temperature signal generation unit generating a temperature signal which is varied according to the temperature of the semiconductor device based on the first and second clock signals.