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    Plant Genes Associated With Seed Oil Content And Methods Of Their Use
    71.
    发明申请
    Plant Genes Associated With Seed Oil Content And Methods Of Their Use 失效
    与种子油含量及其使用方法相关的植物基因

    公开(公告)号：US20110191904A1

    公开(公告)日：2011-08-04

    申请号：US12972408

    申请日：2010-12-17

    Applicant: Rajesh Kumar ,  Henry T. Nguyen

    Inventor： Rajesh Kumar ,  Henry T. Nguyen

    IPC: C12N15/82 ,  A01H5/00

    CPC classification number: C12N15/8247

    Abstract: Cytochrome b5 (Cb5) is a haem-binding protein located in the endoplasmic reticulum (ER) and the outer mitochondrial membranes of higher eukaryotes. In higher plants, animals, and fungi, the ER resident Cb5 has been shown to play a role in desaturation of acyl CoA fatty acids. Higher plants Cb5 isoforms from plants such as soybean or Arabidopsis are capable of modulating omega-3 desaturation. Co-expression of certain Cb5 isoforms with FAD3 in a host plant results in increased production of seed oil content as well as altered ratio between different fatty acids. It is also disclosed here that overexpression of Yarrowia ACL enzymes in the plastids of a host plant helps boost the synthesis of acetyl CoA, which in turn, may lead to increased synthesis of fatty acids and enhanced oil accumulation in the seeds.

    Abstract translation: 细胞色素b5（Cb5）是位于内质网（ER）中的血液结合蛋白和高等真核生物的外线粒体膜。 在高等植物，动物和真菌中，已经显示ER居民Cb5在酰基辅酶A脂肪酸的去饱和中起作用。 来自植物如大豆或拟南芥的高等植物Cb5异构体能够调节ω-3去饱和。 某些Cb5异构体与宿主植物中的FAD3的共表达导致种子油含量的产量增加以及不同脂肪酸之间的比例改变。 这里还公开了耶氏酵母属ACL酶在宿主植物的质体中的过表达有助于促进乙酰辅酶A的合成，这反过来可能导致脂肪酸的合成增加并增强种子中的油积聚。

    Sequence numbering for distributed wireless networks
    72.
    发明授权
    Sequence numbering for distributed wireless networks 有权
    分布式无线网络的序列号

    公开(公告)号：US07978656B2

    公开(公告)日：2011-07-12

    申请号：US12055019

    申请日：2008-03-25

    Applicant: Nileshkumar J. Parekh ,  Rajesh Kumar ,  Maksim (Max) Krasnyanskiy ,  Eric Hall

    Inventor： Nileshkumar J. Parekh ,  Rajesh Kumar ,  Maksim (Max) Krasnyanskiy ,  Eric Hall

    IPC: H04L12/28 ,  H04L12/56

    CPC classification number: H04L1/1642

    Abstract: Systems and methodologies are described that facilitate maintaining consistent radio-link layer protocol (RLP) sequence numbers in the event of an RLP sequence number reset. An offset can be adjusted upon occurrence of the event to reflect a subsequent expected sequence number. The offset can be added to the RLP sequence numbers such that receiving devices and/or higher layer applications can operate without realizing the sequence number reset. Additionally, the offset can be synchronized among base stations to facilitate operability following handoff of the receiving device.

    Abstract translation: 描述了在RLP序列号重置的情况下有助于维持一致的无线电链路层协议（RLP）序列号的系统和方法。 发生事件时可以调整偏移量以反映随后的预期序列号。 可以将偏移量添加到RLP序列号，使得接收设备和/或更高层应用可以在不实现序列号重置的情况下操作。 此外，可以在基站之间同步偏移，以便于在接收设备切换之后的可操作性。

    Silicon carbide semiconductor device
    79.
    发明授权
    Silicon carbide semiconductor device 有权
    碳化硅半导体器件

    公开(公告)号：US07821013B2

    公开(公告)日：2010-10-26

    申请号：US11501777

    申请日：2006-08-10

    Applicant: Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Rashid Jeremy ,  Andrei Mihaila ,  Florin Udrea

    Inventor： Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Rashid Jeremy ,  Andrei Mihaila ,  Florin Udrea

    IPC: H01L29/12 ,  H01L29/41

    CPC classification number: H01L29/8083 ,  H01L29/1608

    Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.

    Abstract translation: 碳化硅半导体器件包括：包括第一和第二栅极层，沟道层，源极层和沟槽的半导体衬底; 栅极布线，具有第一部分和多个第二部分; 以及具有第三部分和多个第四部分的源极布线。 沟槽沿预定的延伸方向延伸。 第一部分连接到沟槽中的第一栅极层，并延伸到延伸方向。 第二部分垂直突出成为梳形。 第三部分延伸到延伸方向。 第四部分垂直突出成梳状，并且电连接到源层。 每个第二部分通过接触孔连接到第二栅极层。

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