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公开(公告)号：US4383266A
公开(公告)日：1983-05-10
申请号：US187744
申请日：1980-09-16
IPC分类号： H01L31/107 , H01L29/90
CPC分类号： H01L31/1075
摘要： An avalanche photo diode provided with a guard ring around a photo detecting region having a pn junction, in which semiconductor layers of the photo detecting region having a pn junction, different in conductivity type from a semiconductor of the guard ring, are composed of a second semiconductor layer formed in contact with a first semiconductor layer forming the pn junction of the photo detecting region and of the same conductivity type as the semiconductor of the guard ring, and a third semiconductor layer formed in contact with the second semiconductor layer and having a larger band gap than the second semiconductor layer, and in which the tip end of the guard ring is formed to extend down into the third semiconductor layer. An avalanche photo diode can be formed to be provided with a uniformly thick, first semiconductor layer forming a photo detecting region and a second semiconductor layer forming a first pn junction between it and the first semiconductor layer, in which third and fourth semiconductor layers of the same composition as each other, respectively having larger band gaps than those of the first and second semiconductor layers, are provided to form therebetween a second pn junction which extends from the first pn junction to surround the peripheral portion of the first semiconductor layer.
摘要翻译： 一种雪崩光电二极管，其在具有pn结的光检测区域周围设置有保护环，其中具有pn结的光检测区域的半导体层与导电类型不同于保护环的半导体，由第二 形成为与形成光检测区域的pn结并且具有与保护环的半导体相同的导电类型的第一半导体层形成的半导体层，以及形成为与第二半导体层接触并具有较大的第三半导体层的第三半导体层 带隙比第二半导体层，并且其中保护环的尖端形成为向下延伸到第三半导体层。 可以形成雪崩光电二极管，以形成均匀厚的形成光检测区域的第一半导体层和在其与第一半导体层之间形成第一pn结的第二半导体层，其中第三半导体层 提供分别具有比第一和第二半导体层的带隙大的带隙的彼此相同的组成，以形成从第一pn结延伸到围绕第一半导体层的周边部分的第二pn结。
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公开(公告)号：US4274103A
公开(公告)日：1981-06-16
申请号：US50628
申请日：1979-06-21
申请人： Takaya Yamamoto , Kazuo Sakai , Shigeyuki Akiba
发明人： Takaya Yamamoto , Kazuo Sakai , Shigeyuki Akiba
IPC分类号： H01L29/864 , H01L31/107 , H01L31/109 , H01L29/90 , H01L27/14 , H01L29/161
CPC分类号： H01L31/109 , H01L31/1075
摘要： An avalanche photodiode with a semiconductor hetero structure, in which a light absorbing region and an avalanche multiplying region where avalanche gain is attained are formed of different materials. The different materials may be two compound semiconductors of different compositions. The lattice constants of the two compound semiconductors may be matched with each other.
摘要翻译： 具有半导体异质结构的雪崩光电二极管，其中获得雪崩增益的光吸收区域和雪崩倍增区域由不同的材料形成。 不同的材料可以是两种不同组成的化合物半导体。 两个化合物半导体的晶格常数可以彼此匹配。
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公开(公告)号：US6160649A
公开(公告)日：2000-12-12
申请号：US136720
申请日：1998-08-19
申请人： Yukio Horiuchi , Shu Yamamoto , Shigeyuki Akiba
发明人： Yukio Horiuchi , Shu Yamamoto , Shigeyuki Akiba
IPC分类号： H04J14/00 , H04B10/07 , H04B10/2507 , H04B10/54 , H04B10/548 , H04B17/00 , H04J14/02 , H04B10/08
CPC分类号： H04B10/07955 , H04B10/0775 , H04B10/0779 , H04B10/0799 , H04B2210/075 , H04B2210/078
摘要： An oscillator oscillates at a predetermined reference frequency, and a reference signal light sender generates light (reference signal light) of a specific wavelength deeply modulated by output from the oscillator. A frequency divider frequency-divides the output from the oscillator into a certain number, and outputs a tone signal of a predetermined measurement frequency. Output from the frequency divider is applied to selected one of a plurality of optical transmission signal senders via one of a plurality of switches, and is used to slightly intensity-modulate a corresponding optical transmission signal. An optical divider in an optical repeater outputs most of output light from an optical amplifier onto an optical fiber transmission line toward a terminal station, and applies small amounts of the light to a measuring circuit. The measuring circuit synchronously detects the measurement frequency component in the received light using the reference frequency obtained from the reference signal light of the specific wavelength. A modulator slightly varies the amplification gain of the other optical amplifier that amplifies the signal light travelling on the other optical fiber transmission line in response to results of measurement by the measuring circuit.
摘要翻译： 振荡器以预定的参考频率振荡，并且参考信号光发送器产生由振荡器的输出深度调制的特定波长的光（参考信号光）。 分频器将振荡器的输出分频为一定数量，并输出预定测量频率的音调信号。 来自分频器的输出经由多个开关中的一个被施加到多个光传输信号发送器中的所选择的一个，并且用于对相应的光传输信号进行轻微的调制。 光中继器中的分光器将大部分从光放大器的输出光输出到光终端上的光纤传输线，并将少量的光施加到测量电路。 测量电路使用从特定波长的参考信号光获得的参考频率同步地检测接收光中的测量频率分量。 调制器稍微改变另一个光放大器的放大增益，该放大增益响应于测量电路的测量结果而放大在另一条光纤传输线上传播的信号光。
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公开(公告)号：US5019519A
公开(公告)日：1991-05-28
申请号：US316865
申请日：1989-02-28
IPC分类号： H01L21/265 , G02B6/134 , H01L21/306 , H01L21/324 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/20
CPC分类号： H01S5/0265 , G02B6/1347 , H01L21/30612 , H01L21/3245 , H01S5/20 , H01S5/2059 , H01S5/2063 , Y10S148/084
摘要： An optical semiconductor device manufacturing method is disclosed which involves an ion implantation step of implanting ions into a compound semiconductor wafer through an ion implantation mask and an annealing step of activating atoms in the compound semiconductor wafer through an annealing mask film. The ion implantation step and the annealing step are performed in succession after laminating mono- or multi-layered compound semiconductor layers as the ion implantation mask and the annealing mask film on the compound semiconductor wafer.
摘要翻译： 公开了一种光学半导体器件制造方法，其包括通过离子注入掩模将离子注入化合物半导体晶片的离子注入步骤和通过退火掩模膜激活化合物半导体晶片中的原子的退火步骤。 在将单层或多层化合物半导体层作为离子注入掩模和化合物半导体晶片上的退火掩模膜层叠之后，依次进行离子注入步骤和退火步骤。
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公开(公告)号：US4788690A
公开(公告)日：1988-11-29
申请号：US942451
申请日：1986-12-16
申请人： Shigeyuki Akiba , Masashi Usami
发明人： Shigeyuki Akiba , Masashi Usami
IPC分类号： H01S5/00 , H01L31/153 , H01S5/026 , H01S5/0683 , H01S5/12 , H01S5/16 , H01S3/19 , H01L31/12 , H01S3/08
CPC分类号： H01S5/164 , H01L31/153 , H01S5/0264 , H01S5/0683 , H01S5/12 , H01S5/168
摘要： A distributed feedback semiconductor laser with monitor is disclosed, in which the energy gap of a cap layer formed on the laser region and the window region is smaller than the energy gap of the light emitting layer, and in which a pn junction isolated from a pn junction in the laser region is provided in the cap layer on the window region.
摘要翻译： 公开了一种具有监视器的分布式反馈半导体激光器，其中形成在激光区域和窗口区域上的盖层的能隙小于发光层的能隙，并且其中pn结与pn分离 激光区域中的接合点设置在窗口区域上的盖层中。
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公开(公告)号：US4701930A
公开(公告)日：1987-10-20
申请号：US764217
申请日：1985-08-09
摘要： A distributed feedback semiconductor laser, in which the periodic corrugations in the first region and the second region of the light emitting region of the DFB laser have different lengths or depths to make the intensities of the Bragg reflection of the first region and the second region different from each other, thereby obtaining asymmetrical light outputs from the both sides of the DFB laser.
摘要翻译： 分布式反馈半导体激光器，其中DFB激光器的发光区域的第一区域和第二区域中的周期性波纹具有不同的长度或深度，以使得第一区域和第二区域的布拉格反射的强度不同 从而从DFB激光器的两侧获得不对称的光输出。
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公开(公告)号：US4653059A
公开(公告)日：1987-03-24
申请号：US688566
申请日：1985-01-03
摘要： A distributed feedback semiconductor laser which has periodic corrugations formed in a light emitting layer or an adjoining layer to extend in the direction of travel of light. A window region formed by a semiconductor layer larger in energy gap than the light emitting layer is provided on the extension line of one end of a laser region formed in the light emitting layer. The length of the window region is so limited as to prevent substantial reflection of laser output light in the window region. The end face of the laser on the opposite side from the window region is coated with a film for increasing reflectivity.
摘要翻译： 一种分布式反馈半导体激光器，其具有在发光层或相邻层中形成的周期性波纹，以在光的行进方向上延伸。 由形成在发光层的激光区域的一端的延长线上设置由能隙比发光层大的半导体层形成的窗口区域。 窗口区域的长度被限制以防止激光输出光在窗口区域中的实质反射。 在与窗口区域相反的一侧上的激光器的端面涂覆有用于增加反射率的膜。
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公开(公告)号：US4648096A
公开(公告)日：1987-03-03
申请号：US660934
申请日：1984-10-15
摘要： A distributed feedback semiconductor laser which has periodic corrugations in a light emitting layer or an adjoining layer in the direction of travel of light and performs laser oscillation by the injection of carriers into said light emitting layer. In accordance with the present invention, there are provided, in the neighborhood of the center of a laser region, a region for changing the phase of the periodic corrugations by about 180 degrees, and, on the extension of the laser oscillation region at both sides thereof, a window region formed of a semiconductor larger in energy gap but smaller in refractive index than the light emitting layer, the length of the window region being so limited as to prevent substantial reflection of laser output light in the window region.
摘要翻译： 一种分布式反馈半导体激光器，其在光的行进方向上在发光层或邻接层中具有周期性波纹，并通过将载流子注入所述发光层来执行激光振荡。 根据本发明，在激光区域的中心附近设置用于将周期性波纹的相位改变约180度的区域，并且在两侧的激光振荡区域的延伸上 由能隙较大且折射率小于发光层的半导体形成的窗口区域，窗口区域的长度受到限制，以防止激光输出光在窗口区域中的实质反射。
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公开(公告)号：US4633474A
公开(公告)日：1986-12-30
申请号：US678244
申请日：1984-12-05
摘要： A distributed feedback semiconductor laser which has periodic corrugations formed in a layer adjoining a light emitting layer so as to extend in the direction of travel of light and performs laser oscillation by the injection of current into the light emitting layer, in which a part of at least one metal electrode has a TM mode suppressing region disposed at a position where light is essentially distributed in the thickwise direction of the laser. A window region formed of a semiconductor larger in energy gap than the light emitting layer is disposed at both ends of the laser oscillation region in the direction of travel of light, the length of the window region being limited so that no substantial reflection occurs therein.
摘要翻译： 一种分布式反馈半导体激光器，其具有在与发光层相邻的层中形成的周期性波纹，以沿着光的行进方向延伸，并且通过向发光层注入电流并执行激光振荡，其中， 至少一个金属电极具有设置在光在激光的厚度方向上基本分布的位置的TM模式抑制区域。 在光的行进方向上，在激光振荡区域的两端配置由能量差大于发光层的半导体形成的窗口区域，限制窗口区域的长度，使得不发生实质的反射。
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公开(公告)号：US4573161A
公开(公告)日：1986-02-25
申请号：US556294
申请日：1983-11-30
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser, in which layers on both sides of the light emitting region are each formed by laminating a plurality of semiconductor layers of different energy band gaps and thicknesses smaller than 0.03 .mu.m. The thickness of the thin film layer of at least one kind of the semiconductor thin film layers of a thickness less than 0.03 .mu.m varies in dependence upon the layers remoteness from the light emitting region. The light emitting region and the layers on both sides of the light emitting region are each formed of a mixed crystal which consists of indium, gallium, arsenic and phosphorus, or indium, gallium, aluminum and arsenic and which has a lattice constant difference less than 0.3% relative to indium phosphide.
摘要翻译： 通过层叠多个不同能带隙和小于0.03μm的厚度的半导体层，形成发光区域两侧的层的半导体激光器。 厚度小于0.03μm的至少一种半导体薄膜层的薄膜层的厚度根据与发光区域偏离的层次而变化。 发光区域和发光区域两侧的层均由铟，镓，砷和磷或铟，镓，铝和砷组成的混晶体形成，其晶格常数差小于 相对于磷化铟为0.3％。
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