公开(公告)号：US08833921B2

公开(公告)日：2014-09-16

申请号：US13194230

申请日：2011-07-29

Applicant: Takakazu Kihira ,  Yoshikazu Akiyama ,  Osamu Machida ,  Masahiro Yagi ,  Ryoh Tashiro

Inventor： Takakazu Kihira ,  Yoshikazu Akiyama ,  Osamu Machida ,  Masahiro Yagi ,  Ryoh Tashiro

IPC: B41J2/01 ,  B41J11/00 ,  B41J3/407

CPC classification number: B41J11/002 ,  B41J3/407 ,  B41J11/0015

Abstract: A thin-film forming apparatus for forming a thin film on a substrate by using an ink-jet method includes an ink applying unit that applies an ink drop for thin-film formation to a predetermined area on a surface of the substrate; at least one laser light source for heating the ink drop thereby forming a thin film; and a laser-light irradiating unit that irradiates, with a laser light from the laser light source, a first spot positioned on a back side of the predetermined area of the substrate to which the ink drop has been applied.

Abstract translation: 通过使用喷墨方法在基板上形成薄膜的薄膜形成装置包括将涂膜用于薄膜形成的墨滴施加到基板表面上的规定区域; 至少一个用于加热墨滴的激光源，从而形成薄膜; 以及激光照射单元，其用来自激光光源的激光照射位于已经施加有墨滴的基板的预定区域的背面上的第一光点。

公开(公告)号：US20140049582A1

公开(公告)日：2014-02-20

申请号：US13965900

申请日：2013-08-13

Applicant: Osamu Machida ,  Akira Shimofuku ,  Ryo Tashiro ,  Atsushi Takeuchi

Inventor： Osamu Machida ,  Akira Shimofuku ,  Ryo Tashiro ,  Atsushi Takeuchi

IPC: B41J2/14 ,  H01L41/33 ,  H01L41/332 ,  H01L41/08

CPC classification number: B41J2/14233 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/318 ,  H01L41/33 ,  H01L41/331 ,  H01L41/332

Abstract: An electro-mechanical transducer element is disclosed. The electro-mechanical transducer element includes a first electrode formed on a substrate; an electro-mechanical transducer film formed on at least a part of the first electrode; and a second electrode formed on at least a part of the electro-mechanical transducer film. In at least one cross section of the electro-mechanical transducer film, a film thickness distribution shape is convex to the second electrode side.

Abstract translation: 公开了一种机电换能器元件。 机电换能器元件包括形成在基板上的第一电极; 形成在所述第一电极的至少一部分上的机电换能器膜; 以及形成在所述机电换能器膜的至少一部分上的第二电极。 在机电换能器膜的至少一个截面中，膜厚分布形状向第二电极侧凸出。

公开(公告)号：US08513983B2

公开(公告)日：2013-08-20

申请号：US13041689

申请日：2011-03-07

Applicant: Osamu Machida

Inventor： Osamu Machida

IPC: H03K3/00

CPC classification number: H03K3/00 ,  H03K5/08

Abstract: A switch device comprised of a wide band gap semiconductor is provided. The switch device comprises a drain, a source, a gate and a gate voltage clamp circuit, which is connected between a signal terminal, to which a signal for driving the gate is input, and the gate through a series circuit of a capacitor and a resistance, and which comprises a diode and a voltage limiter circuit provided between the drain and the gate.

Abstract translation: 提供了由宽带隙半导体构成的开关装置。 开关装置包括漏极，源极，栅极和栅极电压钳位电路，其连接在输入用于驱动栅极的信号的信号端和栅极之间，通过电容器的串联电路和 电阻，并且其包括设置在漏极和栅极之间的二极管和限压器电路。

公开(公告)号：US20130169713A1

公开(公告)日：2013-07-04

申请号：US13727758

申请日：2012-12-27

Applicant: Atsushi Takeuchi ,  Osamu Machida ,  Akira Shimofuku ,  Xianfeng Chen ,  Ryo Tashiro

Inventor： Atsushi Takeuchi ,  Osamu Machida ,  Akira Shimofuku ,  Xianfeng Chen ,  Ryo Tashiro

IPC: H01L21/62 ,  B41J2/01

CPC classification number: H01L21/62 ,  B41J2/01 ,  B41J2/161 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1646

Abstract: A method of making a liquid discharge head which includes a nozzle to discharge liquid, a pressure chamber communicating with the nozzle, a pressure chamber substrate to form surfaces of the pressure chamber, and a piezoelectric actuator to apply pressure to liquid in the pressure chamber having a lower electrode, a ferroelectric film, and an upper electrode, includes a silicon wafer supplying process, a position adjustment process, a surface treatment process to reform a surface of the lower electrode, a liquid applying process to apply ferroelectric precursor on the lower electrode by an inkjet method, a heating process to heat the ferroelectric precursor film, and a cooling process. A series of processes from the position adjustment process to the cooling process is iterated to form a ferroelectric film having a predetermined thickness. The series of processes is performed with certain waiting times inserted between key processes.

Abstract translation: 一种制造液体排出头的方法，该排液头包括用于排出液体的喷嘴，与喷嘴连通的压力室，压力室基板以形成压力室的表面;以及压电致动器，用于向压力室中的液体施加压力， 下电极，铁电体膜和上电极，包括硅晶片供给工序，位置调整工序，对下电极的表面进行改质的表面处理工序，在下电极上施加铁电前体的液体施加工序 通过喷墨法，加热铁电前体膜的加热工序和冷却工序。 迭代从位置调整处理到冷却处理的一系列处理，以形成具有预定厚度的铁电体膜。 一系列进程是在密钥进程之间插入某些等待时间的情况下执行的。

公开(公告)号：US20130162726A1

公开(公告)日：2013-06-27

申请号：US13821378

申请日：2011-09-05

Applicant: Satoshi Mizukami ,  Yoshikazu Akiyama ,  Masaru Shinkai ,  Osamu Machida

Inventor： Satoshi Mizukami ,  Yoshikazu Akiyama ,  Masaru Shinkai ,  Osamu Machida

IPC: H01L41/29 ,  B41J2/045 ,  H01L41/08

CPC classification number: H01L41/0973 ,  B41J2/045 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  B41J2002/1425 ,  B41J2002/14491 ,  H01L27/20 ,  H01L41/0477 ,  H01L41/0478 ,  H01L41/0805 ,  H01L41/29

Abstract: A manufacturing method of an electromechanical transducing device includes forming a vibration plate on a substrate; forming a first electrode made of a metal on the vibration plate; forming a second electrode made of an electrically conductive oxide on the first electrode; coating a surface modification material and carrying out surface modification of only the first electrode; forming an electromechanical transducing film on the second electrode; and forming a third electrode made of an electrically conductive oxide on the electromechanical transducing film.

Abstract translation: 机电换能装置的制造方法包括在基板上形成振动板; 在振动板上形成由金属制成的第一电极; 在所述第一电极上形成由导电氧化物制成的第二电极; 涂覆表面改性材料并进行仅第一电极的表面改性; 在所述第二电极上形成机电换向膜; 以及在机电转换膜上形成由导电氧化物制成的第三电极。

公开(公告)号：US20120217546A1

公开(公告)日：2012-08-30

申请号：US13466565

申请日：2012-05-08

Applicant: Osamu Machida ,  Akio Iwabuchi

Inventor： Osamu Machida ,  Akio Iwabuchi

IPC: H01L29/778

CPC classification number: H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316

Abstract: An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics, the gate electrode being provided above the main surface of the semiconductor region while interposing a p-type material film therebetween, and being arranged between the source electrode and the drain electrode, and a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode.

Abstract translation: 本发明的一个方面在半导体器件中包括设置在半导体区域的主表面上的半导体区域，源电极和漏电极，具有常关特性的栅电极，栅电极被设置 在半导体区域的主表面之上，同时在其间插入p型材料膜，并且布置在源电极和漏电极之间;以及第四电极，设置在半导体区域的主表面上，并且布置在 栅电极和漏电极。

公开(公告)号：US20120139589A1

公开(公告)日：2012-06-07

申请号：US13306265

申请日：2011-11-29

Applicant: Osamu Machida ,  Hironori Aoki

Inventor： Osamu Machida ,  Hironori Aoki

IPC: G05F1/10

CPC classification number: H03K17/0822 ,  H02M1/32 ,  H02M1/36 ,  H02M3/33507

Abstract: A gate driver for driving a gate of a switching element Tr7 includes a driving part that drives the switching element according to a control signal and an active clamp circuit to clamp the voltage between the first and second main terminals of the switching element through the driving part. If a voltage applied between a first main terminal (drain) and a second main terminal (source) of the switching element exceeds a predetermined voltage, the active clamp circuit forcibly blocks a driving operation of the driving part from driving the switching element.

Abstract translation: 用于驱动开关元件Tr7的栅极的栅极驱动器包括驱动部件，其根据控制信号驱动开关元件和有源钳位电路，以通过驱动部分钳位开关元件的第一和第二主端子之间的电压 。 如果施加在开关元件的第一主端子（漏极）和第二主端子（源极）之间的电压超过预定电压，则有源钳位电路强制地阻止驱动部分的驱动操作来驱动开关元件。

公开(公告)号：US08188515B2

公开(公告)日：2012-05-29

申请号：US12640560

申请日：2009-12-17

Applicant: Osamu Machida ,  Akio Iwabuchi

Inventor： Osamu Machida ,  Akio Iwabuchi

IPC: H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316

Abstract: An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics, the gate electrode being provided above the main surface of the semiconductor region while interposing a p-type material film therebetween, and being arranged between the source electrode and the drain electrode, and a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode.

Abstract translation: 本发明的一个方面在半导体器件中包括设置在半导体区域的主表面上的半导体区域，源电极和漏电极，具有常关特性的栅电极，栅电极被设置 在半导体区域的主表面之上，同时在其间插入p型材料膜，并且布置在源电极和漏电极之间;以及第四电极，设置在半导体区域的主表面上，并且布置在 栅电极和漏电极。

公开(公告)号：US20120038712A1

公开(公告)日：2012-02-16

申请号：US13265192

申请日：2010-05-27

Applicant: Yoshikazu Akiyama ,  Takakazu Kihira ,  Keiji Ueda ,  Akira Shimofuku ,  Osamu Machida

Inventor： Yoshikazu Akiyama ,  Takakazu Kihira ,  Keiji Ueda ,  Akira Shimofuku ,  Osamu Machida

IPC: B41J2/04 ,  H02K15/00

CPC classification number: H01L41/0973 ,  H01L41/318

Abstract: A method of producing an electromechanical transducer includes a first step of partially modifying a surface of a first electrode; a second step of applying a sol-gel liquid including a metal composite oxide to a predetermined area of the partially-modified surface of the first electrode; a third step of performing drying, thermal decomposition, and crystallization on the applied sol-gel liquid to form an electromechanical transduction film; a fourth step of repeating the first, second, and third steps to obtain the electromechanical transduction film with a desired thickness; and a fifth step of forming a second electrode on the electromechanical transduction film.

Abstract translation: 一种制造机电换能器的方法包括：第一步骤，部分地改变第一电极的表面; 将包含金属复合氧化物的溶胶 - 凝胶液施加到第一电极的部分改性表面的预定区域的第二步骤; 在所施加的溶胶 - 凝胶液上进行干燥，热分解和结晶以形成机电转换膜的第三步骤; 重复第一，第二和第三步骤以获得具有所需厚度的机电转换膜的第四步骤; 以及在机电转换膜上形成第二电极的第五步骤。

公开(公告)号：US20120028075A1

公开(公告)日：2012-02-02

申请号：US13179711

申请日：2011-07-11

Applicant: Masahiro YAGI ,  Eiichi Ohta ,  Yoshikazu Akiyama ,  Ryoh Tashiro ,  Osamu Machida

Inventor： Masahiro YAGI ,  Eiichi Ohta ,  Yoshikazu Akiyama ,  Ryoh Tashiro ,  Osamu Machida

IPC: C23C16/52 ,  B32B9/00

CPC classification number: H01L41/317 ,  C23C18/1216 ,  C23C18/14 ,  G01N21/8422 ,  G01N2021/8427

Abstract: A thin film manufacturing method includes placing a substrate in a raw material solution with which a thin film is formed on a first principal plane of the substrate; forming the thin film on the first principal plane of the substrate by applying light to a first principal plane side from a light source; measuring a distance from the first principal plane of the substrate to a liquid surface of the raw material solution by applying light from the light source; and adjusting a position of the substrate in a height direction on the basis of a measurement result obtained at the measuring.

Abstract translation: 薄膜制造方法包括将基板放置在基板的第一主面上形成有薄膜的原料溶液中; 通过将光从光源施加到第一主平面侧，在所述基板的所述第一主平面上形成所述薄膜; 通过施加来自所述光源的光来测量从所述基板的所述第一主平面到所述原料溶液的液面的距离; 并且基于在测量中获得的测量结果来调整基板在高度方向上的位置。