公开(公告)号：US20170301746A1

公开(公告)日：2017-10-19

申请号：US15132770

申请日：2016-04-19

申请人： International Business Machines Corporation

发明人： Daniel C. Edelstein ,  Chih-Chao Yang

IPC分类号： H01L49/02 ,  H01L21/66 ,  H01L21/768 ,  H01L27/01 ,  H01L21/62 ,  H01L21/02 ,  H01L23/522

CPC分类号： H01L28/24 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02697 ,  H01L21/62 ,  H01L21/76892 ,  H01L22/14 ,  H01L22/20 ,  H01L23/5228 ,  H01L27/016 ,  H01L27/0802

摘要： A semiconductor structure containing at least two metal resistor structures having different resistivities is provided and includes a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first nitridized dielectric surface layer portion having a first nitrogen content, a first metal layer portion and a first nitridized metal surface layer. A second metal resistor structure is located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second nitridized dielectric surface layer portion having a second nitrogen content, a second metal layer portion and a second nitridized metal surface layer. The second nitrogen content of the second nitridized dielectric surface layer portion differs from the first nitrogen content of the first nitridized dielectric surface layer portion.

公开(公告)号：US09202717B2

公开(公告)日：2015-12-01

申请号：US13727758

申请日：2012-12-27

申请人： Atsushi Takeuchi ,  Osamu Machida ,  Akira Shimofuku ,  Xianfeng Chen ,  Ryo Tashiro

发明人： Atsushi Takeuchi ,  Osamu Machida ,  Akira Shimofuku ,  Xianfeng Chen ,  Ryo Tashiro

IPC分类号： H01L21/00 ,  B05C11/00 ,  B05C13/00 ,  B05C13/02 ,  B05B7/00 ,  H01L21/62 ,  B41J2/01 ,  B41J2/16

CPC分类号： H01L21/62 ,  B41J2/01 ,  B41J2/161 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1646

摘要： A method of making a liquid discharge head which includes a nozzle to discharge liquid, a pressure chamber communicating with the nozzle, a pressure chamber substrate to form surfaces of the pressure chamber, and a piezoelectric actuator to apply pressure to liquid in the pressure chamber having a lower electrode, a ferroelectric film, and an upper electrode, includes a silicon wafer supplying process, a position adjustment process, a surface treatment process to reform a surface of the lower electrode, a liquid applying process to apply ferroelectric precursor on the lower electrode by an inkjet method, a heating process to heat the ferroelectric precursor film, and a cooling process. A series of processes from the position adjustment process to the cooling process is iterated to form a ferroelectric film having a predetermined thickness. The series of processes is performed with certain waiting times inserted between key processes.

摘要翻译： 一种制造液体排出头的方法，该排液头包括用于排出液体的喷嘴，与喷嘴连通的压力室，压力室基板以形成压力室的表面;以及压电致动器，用于向压力室中的液体施加压力， 下电极，铁电体膜和上电极，包括硅晶片供给工序，位置调整工序，对下电极的表面进行改质的表面处理工序，在下电极上施加铁电前体的液体施加工序 通过喷墨法，加热铁电前体膜的加热工序和冷却工序。 迭代从位置调整处理到冷却处理的一系列处理，以形成具有预定厚度的铁电体膜。 一系列进程是在密钥进程之间插入某些等待时间的情况下执行的。

公开(公告)号：US09972671B2

公开(公告)日：2018-05-15

申请号：US15132758

申请日：2016-04-19

申请人： International Business Machines Corporation

发明人： Daniel C. Edelstein ,  Chih-Chao Yang

IPC分类号： H01L49/02 ,  H01L21/02 ,  H01L21/62 ,  H01L27/01 ,  H01L23/522

CPC分类号： H01L28/24 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/62 ,  H01L23/5228 ,  H01L27/016

摘要： A semiconductor structure is provided that includes a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first nitridized dielectric surface layer portion having a first nitrogen content, a first metal portion, and a first dielectric capping layer portion. The semiconductor structure of the present application further includes a second metal resistor structure located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second nitridized dielectric surface layer portion having a second nitrogen content that differs from the first nitrogen content, a second metal portion, and a second dielectric capping layer portion.

公开(公告)号：US09423377B2

公开(公告)日：2016-08-23

申请号：US14945211

申请日：2015-11-18

申请人： Robert Bosch GmbH

发明人： Robert Roelver ,  Daniel Pantel ,  Stefan Henneck

IPC分类号： H01L21/00 ,  G01N27/416 ,  G01N27/407 ,  H01L21/62 ,  G01N27/414

CPC分类号： G01N27/4166 ,  G01N27/407 ,  G01N27/4071 ,  G01N27/4077 ,  G01N27/4143 ,  H01L21/62

摘要： A device for detecting at least one gaseous analyte comprises a detection section including a semiconductor substrate and at least one sensor element, which is arranged on the semiconductor substrate. The at least one sensor element includes two electrodes and a solid electrolyte layer arranged between the electrodes. The device also comprises a protective cap configured to cover the at least one sensor element, and at least one temperature-control unit configured for temperature control of the protective cap. The at least one temperature-control unit is arranged on the protective cap. The protective cap is formed from a semiconductor material. The device further comprises a diffusion section having a plurality of passage openings for the gaseous analyte arranged at least in a partial section of the protective cap.

摘要翻译： 用于检测至少一种气态分析物的装置包括检测部分，其包括半导体衬底和布置在半导体衬底上的至少一个传感器元件。 所述至少一个传感器元件包括两个电极和布置在所述电极之间的固体电解质层。 该装置还包括构造成覆盖至少一个传感器元件的保护盖，以及被配置用于保护盖的温度控制的至少一个温度控制单元。 至少一个温度控制单元设置在保护盖上。 保护盖由半导体材料形成。 该装置还包括扩散部分，该扩散部分具有多个用于气体分析器的通道开口，该通气开口至少布置在保护帽的部分部分中。

公开(公告)号：US20170301745A1

公开(公告)日：2017-10-19

申请号：US15132758

申请日：2016-04-19

申请人： International Business Machines Corporation

发明人： Daniel C. Edelstein ,  Chih-Chao Yang

IPC分类号： H01L49/02 ,  H01L23/522 ,  H01L21/62 ,  H01L21/02 ,  H01L27/01

CPC分类号： H01L28/24 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/62 ,  H01L23/5228 ,  H01L27/016

摘要： A semiconductor structure is provided that includes a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first nitridized dielectric surface layer portion having a first nitrogen content, a first metal portion, and a first dielectric capping layer portion. The semiconductor structure of the present application further includes a second metal resistor structure located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second nitridized dielectric surface layer portion having a second nitrogen content that differs from the first nitrogen content, a second metal portion, and a second dielectric capping layer portion.

公开(公告)号：US20170166436A1

公开(公告)日：2017-06-15

申请号：US15372571

申请日：2016-12-08

申请人： Robert Bosch GmbH

发明人： Zhenyu Wu

IPC分类号： B81B3/00 ,  B81C1/00 ,  H01L21/66

CPC分类号： B81B3/0021 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/019 ,  B81C1/00158 ,  B81C1/00182 ,  B81C2203/01 ,  B81C2203/0778 ,  H01L21/62 ,  H01L22/30 ,  H01L28/00 ,  H01L28/75

摘要： A manufacturing method for a micromechanical sensor device and a corresponding micromechanical sensor device. The method includes providing a substrate including at least one first through a fourth parallel trenches; depositing a layer onto the front side, the trenches being sealed, and structuring the layer, contact structures being formed in the layer above the second and fourth trenches; oxidizing of outwardly free-standing side surfaces of the contact structures as well as of the second and fourth trenches, at least in areas; depositing and structuring a first metallic contacting material, the contact structures being filled with the first metallic contacting material, at least in areas; opening the second trench and the fourth trench; galvanic deposition of a second metallic contacting material into the second and fourth trenches, resulting in the formation of a pressure-sensitive capacitive capacitor structure; and opening the first trench from the front side of the substrate.

公开(公告)号：US20140081299A1

公开(公告)日：2014-03-20

申请号：US13622921

申请日：2012-09-19

申请人： Timothy G. Dietz ,  Yanik Tardy ,  Juergen Burger ,  Philippe Margairaz ,  Toralf Bork

发明人： Timothy G. Dietz ,  Yanik Tardy ,  Juergen Burger ,  Philippe Margairaz ,  Toralf Bork

IPC分类号： A61B17/32 ,  H01L21/62

CPC分类号： H01L21/62 ,  A61B17/320068 ,  A61B17/3211 ,  A61B2017/00526

摘要： An ultrasonic core including a longitudinally elongated, generally planar waveguide defining an aperture extending from a first side of the waveguide toward a medial plane of the waveguide, and having a transducer element sized and shaped so as to substantially conform to the size and shape of the aperture and to be at least partially embedded within the waveguide. In other aspects, an ultrasonic core including a longitudinally elongated, generally planar silicon waveguide having at least one transducer element secured thereto and a wedge-shaped acoustic horn including an inclined side surface, characterized in that the inclined side surface is oriented along the {1,1,1} crystallographic plane of the silicon material. Also, methods of manufacturing the respective ultrasonic cores and ultrasonic handpieces for an ultrasonic surgical instruments incorporating such cores.

摘要翻译： 一种超声波芯，包括纵向细长的大致平面的波导，其限定了从波导的第一侧朝向波导的中间平面延伸的孔，并且具有尺寸和形状的换能器元件，以便基本上符合波导的尺寸和形状 并且至少部分地嵌入在波导内。 在其它方面，一种超声波芯，其包括纵向细长的大致平面的硅波导，其具有固定到其上的至少一个换能器元件和包括倾斜侧表面的楔形声喇叭，其特征在于，所述倾斜侧表面沿着{1 ，1,1}晶体平面的硅材料。 此外，制造用于包括这种芯的超声外科器械的各个超声波芯和超声手机的方法。

公开(公告)号：US20180197941A1

公开(公告)日：2018-07-12

申请号：US15914106

申请日：2018-03-07

申请人： International Business Machines Corporation

发明人： Daniel C. Edelstein ,  Chih-Chao Yang

IPC分类号： H01L49/02 ,  H01L21/02 ,  H01L23/522 ,  H01L27/01 ,  H01L21/62

CPC分类号： H01L28/24 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/62 ,  H01L23/5228 ,  H01L27/016

摘要： A semiconductor structure is provided that includes a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first nitridized dielectric surface layer portion having a first nitrogen content, a first metal portion, and a first dielectric capping layer portion. The semiconductor structure of the present application further includes a second metal resistor structure located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second nitridized dielectric surface layer portion having a second nitrogen content that differs from the first nitrogen content, a second metal portion, and a second dielectric capping layer portion.

公开(公告)号：US09985088B2

公开(公告)日：2018-05-29

申请号：US15132796

申请日：2016-04-19

申请人： International Business Machines Corporation

发明人： Daniel C. Edelstein ,  Chih-Chao Yang

IPC分类号： H01L49/02 ,  H01L27/01 ,  H01L21/66 ,  H01L21/02 ,  H01L21/62 ,  H01L23/522 ,  H01L21/768

CPC分类号： H01L28/24 ,  H01L21/02697 ,  H01L21/62 ,  H01L21/76892 ,  H01L22/14 ,  H01L22/20 ,  H01L23/5228 ,  H01L27/016

摘要： A semiconductor structure containing at least two metal resistor structures having different amounts of nitrogen on the resistor surface is provided. The resulted resistances (and hence resisitivty) of the two metal resistors can be either the same or different. The semiconductor structure may include a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first metal layer portion and a first nitridized metal surface layer having a first nitrogen content. The semiconductor structure further includes a second metal resistor structure located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second metal layer portion and a second nitridized metal surface layer having a second nitrogen content that differs from the first nitrogen content.

公开(公告)号：US20160146752A1

公开(公告)日：2016-05-26

申请号：US14945211

申请日：2015-11-18

申请人： Robert Bosch GmbH

发明人： Robert Roelver ,  Daniel Pantel ,  Stefan Henneck

IPC分类号： G01N27/416 ,  H01L21/62 ,  G01N27/407

CPC分类号： G01N27/4166 ,  G01N27/407 ,  G01N27/4071 ,  G01N27/4077 ,  G01N27/4143 ,  H01L21/62

摘要： A device for detecting at least one gaseous analyte comprises a detection section including a semiconductor substrate and at least one sensor element, which is arranged on the semiconductor substrate. The at least one sensor element includes two electrodes and a solid electrolyte layer arranged between the electrodes. The device also comprises a protective cap configured to cover the at least one sensor element, and at least one temperature-control unit configured for temperature control of the protective cap. The at least one temperature-control unit is arranged on the protective cap. The protective cap is formed from a semiconductor material. The device further comprises a diffusion section having a plurality of passage openings for the gaseous analyte arranged at least in a partial section of the protective cap.

摘要翻译： 用于检测至少一种气态分析物的装置包括检测部分，其包括半导体衬底和布置在半导体衬底上的至少一个传感器元件。 所述至少一个传感器元件包括两个电极和布置在所述电极之间的固体电解质层。 该装置还包括构造成覆盖至少一个传感器元件的保护盖，以及被配置用于保护盖的温度控制的至少一个温度控制单元。 至少一个温度控制单元设置在保护盖上。 保护盖由半导体材料形成。 该装置还包括扩散部分，该扩散部分具有多个用于气体分析器的通道开口，该通气开口至少布置在保护帽的部分部分中。