公开(公告)号：US09478731B2

公开(公告)日：2016-10-25

申请号：US14430065

申请日：2013-08-22

Applicant: Sony Corporation

Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

IPC: H01L43/08 ,  H01L43/10 ,  G11B5/39 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16

CPC classification number: G11C11/161 ,  G11B5/3909 ,  G11C2213/35 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Provided is a storage cell that makes it possible to improve TMR characteristics, a storage device and a magnetic head that include the storage cell. The storage cell includes a layer structure including a storage layer in which a direction of magnetization is varied in correspondence with information, a magnetization pinned layer having magnetization that is perpendicular to a film surface and serves as a reference of information stored in the storage layer, and an intermediate layer that is provided between the storage layer and the magnetization pinned layer and is made of a nonmagnetic body. Carbon is inserted in the intermediate layer, and feeding a current in a laminating direction of the layer structure allows the direction of magnetization in the storage layer to be varied, to allow information to be recorded in the storage layer.

Abstract translation: 提供一种能够提高TMR特性的存储单元，包括存储单元的存储装置和磁头。 存储单元包括：层结构，其包括存储层，其中磁化方向与信息相对应地变化，磁化固定层具有垂直于膜表面的磁化，并且用作存储在存储层中的信息的参考; 以及设置在所述存储层和所述磁化被钉扎层之间并由非磁性体制成的中间层。 将碳插入中间层，并且沿着层结构的层叠方向供给电流允许存储层中的磁化方向改变，以便将信息记录在存储层中。

公开(公告)号：US09343657B2

公开(公告)日：2016-05-17

申请号：US14429230

申请日：2013-08-09

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: H01L43/08 ,  G11B5/39 ,  G11C11/16 ,  H01L43/10 ,  H01F10/32 ,  H01L43/02 ,  B82Y25/00 ,  H01L27/22 ,  H01F10/12

CPC classification number: G11B5/3146 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L23/528 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: There is provided a storage element including a layered construction including a storage layer that has magnetization perpendicular to a surface of the storage layer and whose direction of magnetization is changed corresponding to information, a pinned magnetization layer that has magnetization perpendicular to a surface of the pinned magnetization layer and serves as a standard for information stored in the storage layer, and an insulating layer that is composed of a non-magnetic material and is provided between the storage layer and the pinned magnetization layer.

Abstract translation: 提供了一种存储元件，其包括层叠结构，其包括存储层，该存储层具有垂直于存储层的表面的磁化强度，并且其磁化方向根据信息而改变;具有垂直于固定的表面的磁化的钉扎磁化层 并且用作存储在存储层中的信息的标准，以及由非磁性材料构成并设置在存储层和被钉扎磁化层之间的绝缘层。

公开(公告)号：US09172029B2

公开(公告)日：2015-10-27

申请号：US14288005

申请日：2014-05-27

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC: H01L43/08 ,  G11C11/00 ,  H01L43/02 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/32 ,  H01F41/32 ,  H01L27/22

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329 ,  H01F41/325 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Abstract translation: 存储元件包括存储层，固定磁化层，自旋势垒层和自旋吸收层。 存储层基于磁性材料的磁化状态存储信息。 通过隧道绝缘层为存储层提供固定磁化层。 自旋势垒层抑制自旋极化电子的扩散，并且设置在与固定磁化层相对的存储层侧。 自旋吸收层由引起自旋泵送的非磁性金属层形成，并且设置在与存储层相对的自旋阻挡层的一侧。 存储层中的磁化方向通过在分层方向上传递电流而改变以注入自旋极化电子，使得信息被记录在存储层中，并且自旋阻挡层至少包括选自氧化物，氮化物和氟化物的材料 。

公开(公告)号：US08942239B2

公开(公告)日：2015-01-27

申请号：US13779139

申请日：2013-02-27

Applicant: Sony Corporation

Inventor： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H04L12/28 ,  H04L12/747 ,  H04L12/773 ,  H04L12/947

CPC classification number: H04L45/742 ,  H04L45/60 ,  H04L49/25

Abstract: A router, includes: a routing table memory unit configured to store a routing table and be capable of reading and writing the routing table at any time, the routing table being destination information of a packet; a search engine unit which has a transfer information base memory unit and which is configured to search for a destination of the packet based on a transfer information base; a power supply unit configured to supply power to the routing table memory unit and the transfer information base memory unit; and a control unit configured to control the power supply unit such that the power is supplied to the non-volatile memory when the non-volatile memory is operated, and the power supply is interrupted when the non-volatile memory is not operated.

Abstract translation: 路由器包括：路由表存储单元，被配置为存储路由表，并且能够随时读取和写入路由表，路由表是分组的目的地信息; 搜索引擎单元，其具有传送信息库存储单元，其被配置为基于传送信息库来搜索分组的目的地; 电源单元，被配置为向所述路由表存储单元和所述传送信息库存储单元供电; 以及控制单元，被配置为控制所述电源单元，使得当所述非易失性存储器被操作时，所述电力被提供给所述非易失性存储器，并且当所述非易失性存储器未被操作时所述电源被中断。

公开(公告)号：US08901531B2

公开(公告)日：2014-12-02

申请号：US14203762

申请日：2014-03-11

Applicant: Sony Corporation

Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H01L29/02 ,  H01L27/22 ,  H01L43/02 ,  H01L29/66 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L29/82

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L29/66007 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic memory with a memory layer having magnetization, the direction of magnetization of which changes according to information recorded therein; a reference layer having a fixed magnetization against which magnetization of the memory layer can be compared; a nonmagnetization layer between the memory layer and the reference layer; and an electrode on one side of the memory layer facing away from the reference layer, wherein, the memory device memorizes the information by reversal of the magnetization of the memory layer by a spin torque generated when a current flows between the memory layer, the nonmagnetization layer and the reference layer, and a heat conductivity of a center portion of the electrode is lower than a heat conductivity of surroundings thereof. The memory and reference preferably have vertical magnetizations.

Abstract translation: 具有存储层的磁存储器，其具有磁化，其磁化方向根据记录在其中的信息而变化; 具有固定磁化的参考层，可以与其比较存储层的磁化强度; 存储层和参考层之间的非磁化层; 以及存储层背离参考层的一侧的电极，其中，所述存储器件通过在电流在存储层，非磁化之间流动时产生的自旋转矩反转存储层的磁化来存储信息 层和参考层，并且电极的中心部分的导热率低于其周围的热导率。 存储器和参考优选地具有垂直磁化。

公开(公告)号：US20140328119A1

公开(公告)日：2014-11-06

申请号：US14359488

申请日：2012-11-19

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G11C11/16 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/02 ,  H01L43/08

Abstract: A storage element includes a magnetization fixed layer, and a magnetization free layer. The magnetization fixed layer includes a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers. The magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer.

Abstract translation: 存储元件包括磁化固定层和无磁化层。 磁化固定层包括与在每对相邻的铁磁层之间形成的耦合层层压在一起的多个铁磁层。 铁磁层的磁化方向相对于磁化固定层的磁化方向倾斜。

公开(公告)号：US20140327097A1

公开(公告)日：2014-11-06

申请号：US14334277

申请日：2014-07-17

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

Abstract: Provided is an information storage element comprising a first layer, an insulation layer coupled to the first layer, and a second layer coupled to the insulation layer opposite the first layer. The first layer has a transverse length that is approximately 45 nm or less, or an area that is approximately 1,600 nm2 or less, so as to be capable of storing information according to a magnetization state of a magnetic material. The magnetization state is configured to be changed by a current. The insulation layer includes a non-magnetic material. The second layer includes a fixed magnetization so as to be capable of serving as a reference of the first layer.

Abstract translation: 提供了一种信息存储元件，包括第一层，耦合到第一层的绝缘层和耦合到与第一层相对的绝缘层的第二层。 第一层具有大约45nm或更小的横向长度或大约1,600nm2或更小的面积，以便能够根据磁性材料的磁化状态存储信息。 磁化状态被配置为由电流改变。 绝缘层包括非磁性材料。 第二层包括固定的磁化强度，以便能够作为第一层的参考。

公开(公告)号：US08809978B2

公开(公告)日：2014-08-19

申请号：US13675789

申请日：2012-11-13

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H01L29/82

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

Abstract: A memory element includes a layered structure: a memory layer having a changeable magnetization direction, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.

Abstract translation: 存储元件包括分层结构：具有可变磁化方向的存储层，通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储层中，该信息包括具有第一铁磁层 磁化方向，其从垂直于膜面的方向倾斜，层压在第一铁磁层上的接合层和层压在接合层上并经由接合层接合到第一铁磁层的第二铁磁层，具有磁化方向 其从垂直于膜面的方向倾斜，具有固定的磁化方向的磁化固定层，设置在存储层和磁化固定层之间并与第一铁磁层接触的中间层，以及 与第二铁磁层接触的盖层。

公开(公告)号：US20140191345A1

公开(公告)日：2014-07-10

申请号：US14203762

申请日：2014-03-11

Applicant: Sony Corporation

Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L29/66007 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic memory with a memory layer having magnetization, the direction of magnetization of which changes according to information recorded therein; a reference layer having a fixed magnetization against which magnetization of the memory layer can be compared; a nonmagnetization layer between the memory layer and the reference layer; and an electrode on one side of the memory layer facing away from the reference layer, wherein, the memory device memorizes the information by reversal of the magnetization of the memory layer by a spin torque generated when a current flows between the memory layer, the nonmagnetization layer and the reference layer, and a heat conductivity of a center portion of the electrode is lower than a heat conductivity of surroundings thereof. The memory and reference preferably have vertical magnetizations.

Abstract translation: 具有存储层的磁存储器，其具有磁化，其磁化方向根据记录在其中的信息而变化; 具有固定磁化的参考层，可以与其比较存储层的磁化强度; 存储层和参考层之间的非磁化层; 以及存储层背离参考层的一侧上的电极，其中，所述存储器件通过在电流在存储层，非磁化之间流动时产生的自旋扭矩反转存储层的磁化来存储信息 层和参考层，并且电极的中心部分的导热率低于其周围的热导率。 存储器和参考优选地具有垂直磁化。

公开(公告)号：US20140042573A1

公开(公告)日：2014-02-13

申请号：US14055386

申请日：2013-10-16

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

IPC: H01L43/10

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/32 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

Abstract: There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer.

Abstract translation: 公开了一种包括层叠结构的存储元件，该结构包括具有垂直于膜面的磁化的存储层; 磁化固定层; 以及设置在存储层之间的绝缘层。 自旋极化的电子沿着分层结构的层叠方向注入，存储层接收的有效抗磁场的大小相对于存储层的饱和磁化量小于相对于绝缘层的饱和磁化量 与存储层接触，并且存储层在与绝缘层相对的一侧接触的另一侧层，至少与存储层接触的界面由氧化物膜形成，并且 除了Co-Fe-B磁性层之外，存储层还包括非磁性金属和氧化物中的至少一种。