公开(公告)号：US11004983B2

公开(公告)日：2021-05-11

申请号：US16778336

申请日：2020-01-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kosei Noda ,  Kouhei Toyotaka ,  Kazunori Watanabe ,  Hikaru Harada

IPC: H01L29/786 ,  H01L27/108 ,  H01L27/11 ,  H01L49/02 ,  H01L27/12 ,  G06F15/76 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423

Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

公开(公告)号：US10756118B2

公开(公告)日：2020-08-25

申请号：US15820965

申请日：2017-11-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Yasutaka Nakazawa ,  Kazunori Watanabe ,  Koji Kusunoki

IPC: G02F1/1368 ,  H01L27/12 ,  H01L29/786

Abstract: A display device includes a liquid crystal element, a transistor, a scan line, and a signal line. The liquid crystal element includes a pixel electrode, a liquid crystal layer, and a common electrode. The scan line and the signal line are each electrically connected to the transistor. The scan line and the signal line each include a metal layer. The transistor is electrically connected to the pixel electrode. A semiconductor layer of the transistor includes a stack of a first metal oxide layer and a second metal oxide layer. The first metal oxide layer includes a region with lower crystallinity than the second metal oxide layer. The transistor includes a first region connected to the pixel electrode. The pixel electrode, the common electrode, and the first region are each configured to transmit visible light. Visible light passes through the first region and the liquid crystal element and exits from the display device.

公开(公告)号：US10139663B2

公开(公告)日：2018-11-27

申请号：US15153077

申请日：2016-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki Shishido ,  Koji Kusunoki ,  Kouhei Toyotaka ,  Kazunori Watanabe ,  Makoto Kaneyasu

IPC: G02F1/1335 ,  G02F1/1333 ,  G06F3/041 ,  G06F3/044 ,  G02F1/1362 ,  G02F1/1343

Abstract: An input/output device is provided. The input/output device includes a first pixel electrode, a second pixel electrode, a first common electrode, a second common electrode, a liquid crystal, a first insulating film, a second insulating film, and a transistor. The first common electrode can serve as one electrode of a sensor element. The second common electrode can serve as the other electrode of the sensor element. The transistor includes a first gate, a second gate, and a semiconductor layer. The pixel electrode, the common electrodes, and the second gate are positioned on different planes. The second gate contains one or more kinds of metal elements included in the semiconductor layer. The second gate, the pixel electrode, and the common electrodes preferably contain one or more kinds of metal elements included in the semiconductor layer.

公开(公告)号：US09600107B2

公开(公告)日：2017-03-21

申请号：US14644814

申请日：2015-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Makoto Kaneyasu ,  Kazunori Watanabe ,  Hiroyuki Miyake

IPC: G06F3/041

CPC classification number: G06F3/041 ,  G06F3/0412 ,  G06F2203/04102

Abstract: To provide a touch panel in which a decrease in display quality is suppressed. The touch panel includes a touch sensor and a display element. The touch sensor includes a transistor and a sensor element. The transistor is electrically connected to the sensor element. The sensor element includes a pair of electrodes and a dielectric layer. The dielectric layer is positioned between the pair of electrodes. One of the pair of electrodes is an island-shaped electrode. The display element can display an image toward the touch sensor side. The island-shaped electrode does not overlap with a display region of the display element.

公开(公告)号：US09501119B2

公开(公告)日：2016-11-22

申请号：US14608844

申请日：2015-01-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazunori Watanabe

IPC: G06F1/26 ,  G06F1/32 ,  H02M3/158 ,  H02M3/07 ,  G06F1/10

CPC classification number: H02M3/07 ,  G05F3/205 ,  G06F1/3234 ,  G06F1/3287 ,  G11C5/145 ,  G11C5/146 ,  H02M3/073 ,  H02M2003/078 ,  Y02D10/171

Abstract: To reduce a variation in the electrical characteristics of a transistor. A potential generated by a voltage converter circuit is applied to a back gate of a transistor included in a voltage conversion block. Since the back gate of the transistor is not in a floating state, a current flowing through the back channel can be controlled so as to reduce a variation in the electrical characteristics of the transistor. Further, a transistor with low off-state current is used as the transistor included in the voltage conversion block, whereby storage of the output potential is controlled.

公开(公告)号：US09385592B2

公开(公告)日：2016-07-05

申请号：US14457525

申请日：2014-08-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazunori Watanabe ,  Tomoaki Atsumi

IPC: G05F1/10 ,  H02M3/07

CPC classification number: H02M3/07 ,  H02M3/073

Abstract: Efficiency of a charge pump circuit is increased. The charge pump circuit includes serially connected fundamental circuits each including a diode-connected transistor and a capacitor. At least one transistor is provided with a back gate, and the back gate is connected to any node in the charge pump circuit. For example, the charge pump circuit is of a step-up type; in which case, if the transistor is an n-channel transistor, a back gate of the transistor in the last stage is connected to an output node of the charge pump circuit. Back gates of the transistors in the other stages are connected to an input node of the charge pump circuit. In this way, the voltage holding capability of the fundamental circuit in the last stage is increased, and the conversion efficiency can be increased because an increase in the threshold of the transistors in the other stages is prevented.

Abstract translation: 电荷泵电路的效率提高。 电荷泵电路包括串联连接的基本电路，每个基本电路包括二极管连接的晶体管和电容器。 至少一个晶体管设置有背栅极，并且后栅极连接到电荷泵电路中的任何节点。 例如，电荷泵电路是升压型的; 在这种情况下，如果晶体管是n沟道晶体管，则最后级的晶体管的背栅极连接到电荷泵电路的输出节点。 其他级中的晶体管的背栅极连接到电荷泵电路的输入节点。 以这种方式，最后阶段的基本电路的电压保持能力增加，并且由于其它级的晶体管的阈值的增加被阻止，可以提高转换效率。

公开(公告)号：US09230502B2

公开(公告)日：2016-01-05

申请号：US13761461

申请日：2013-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazunori Watanabe

IPC: G09G5/00 ,  G09G5/18 ,  G09G3/32

CPC classification number: G09G5/00 ,  G09G3/3225 ,  G09G5/18 ,  G09G2300/0426 ,  G09G2320/0223 ,  G09G2330/02 ,  G09G2370/08

Abstract: A display device with fewer terminals. The display device includes a timing signal generating circuit which outputs an output signal based on a clock signal, in which one signal line serves as both a signal line to which a start pulse signal that drives the timing signal generating circuit is input and a signal line to which an image signal is input. Further, a blocking circuit which outputs a start pulse to the timing signal generating circuit but does not output the image signal is provided between the signal line and the timing signal generating circuit.

Abstract translation: 具有较少端子的显示设备。 显示装置包括定时信号发生电路，其基于时钟信号输出输出信号，其中一条信号线用作输入定时信号发生电路的起始脉冲信号的信号线和信号线 输入图像信号。 此外，在信号线和定时信号发生电路之间设置有向定时信号发生电路输出起始脉冲但不输出图像信号的分块电路。

公开(公告)号：US09041442B2

公开(公告)日：2015-05-26

申请号：US13888454

申请日：2013-05-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Roh Yamamoto ,  Kazunori Watanabe

IPC: H03L7/06 ,  H03K17/00 ,  G06G7/186

CPC classification number: H03F3/45076 ,  G06G7/186 ,  H03F2203/45116 ,  H03F2203/45332 ,  H03K17/002

Abstract: A semiconductor device including an integrator circuit, in which electric discharge from a capacitor can be reduced to shorten time required for charging the capacitor in the case where supply of power supply voltage is stopped and restarted, and a method for driving the semiconductor device are provided. One embodiment has a structure in which a transistor with small off-state current is electrically connected in series to a capacitor in an integrator circuit. Further, in one embodiment of the present invention, a transistor with small off-state current is electrically connected in series to a capacitor in an integrator circuit; the transistor is on in a period during which power supply voltage is supplied; and the transistor is off in a period during which supply of the power supply voltage is stopped.

Abstract translation: 一种包括积分电路的半导体器件，其中可以减少来自电容器的放电，以缩短在停止并重新启动电源电压的情况下为电容器充电所需的时间，以及驱动该半导体器件的方法 。 一个实施例具有其中具有小截止电流的晶体管与积分电路中的电容器串联电连接的结构。 此外，在本发明的一个实施例中，具有小截止电流的晶体管与积分电路中的电容器串联电连接; 在提供电源电压的期间，晶体管导通; 在停止供电电压的期间，晶体管截止。

公开(公告)号：US20140337603A1

公开(公告)日：2014-11-13

申请号：US14336142

申请日：2014-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kosei Noda ,  Kouhei Toyotaka ,  Kazunori Watanabe ,  Hikaru Harada

IPC: H01L27/108 ,  G06F15/76 ,  H01L29/24

CPC classification number: H01L29/7869 ,  G06F15/76 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1112 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696

Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

Abstract translation: 目的是提供一种存储器件，其包括可通过具有低截止电流的薄膜晶体管无故障地操作的存储元件。 提供了一种存储器件，其中包括至少一个包括氧化物半导体层的薄膜晶体管的存储元件被布置为矩阵。 包括氧化物半导体层的薄膜晶体管具有高场效应迁移率和低截止电流，因此可以有利地操作而没有问题。 此外，可以降低功耗。 由于存储器件和像素可以形成在一个衬底上，所以这种存储器件在包括氧化物半导体层的薄膜晶体管被设置在显示器件的像素中的情况下是特别有效的。

公开(公告)号：US20130307496A1

公开(公告)日：2013-11-21

申请号：US13893396

申请日：2013-05-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazunori Watanabe

IPC: H02M3/07

CPC classification number: H02M3/07

Abstract: One object of the invention is to reduce discharge of electric charge from a capacitor when supply of power supply voltage to a charge pump circuit is stopped and restarted, so that a time required after the supply of power supply voltage is restarted and before an input signal is boosted is shortened. A semiconductor device includes a boosting circuit portion including a charge transfer element and a capacitor, boosting a voltage level of an input signal, and outputting an output signal having a boosted voltage level; a detection circuit monitoring a voltage level of the output signal; and a control circuit outputting a signal for controlling boosting of the voltage level of the input signal to the boosting circuit portion in accordance with the voltage level obtained by the detection circuit. The boosting circuit portion includes a switch electrically connected to the capacitor and the charge transfer element.

Abstract translation: 本发明的一个目的是当向电荷泵电路供应电源电压停止并重新启动时，减少电容器的电荷放电，从而在重新开始电源电压供应之后和输入信号之前所需的时间 被提升了。 一种半导体器件包括：升压电路部分，包括电荷转移元件和电容器，升高输入信号的电压电平，并输出具有升压电压电平的输出信号; 监视所述输出信号的电压电平的检测电路; 以及控制电路，根据检测电路获得的电压电平输出用于控制将升压电路部分的输入信号的电压电平升高的信号。 升压电路部分包括电连接到电容器和电荷转移元件的开关。