公开(公告)号：US07646478B2

公开(公告)日：2010-01-12

申请号：US11703095

申请日：2007-02-07

申请人： Koung-Su Shin ,  Dong-Su Ha ,  Chung-Sam Jun

发明人： Koung-Su Shin ,  Dong-Su Ha ,  Chung-Sam Jun

IPC分类号： G01N21/00

CPC分类号： G01J3/10 ,  G01J3/02 ,  G01J3/0267 ,  G01J3/0291 ,  G01N21/255

摘要： An apparatus for examining spectral characteristics of an object may include a chuck configured to support and releasably fix the object, wherein the chuck is larger than the object, a first light source assembly integral with the chuck and configured to illuminate a bottom surface of the object with light having a predetermined spectrum and intensity, and a transmission analysis unit for collecting and analyzing light transmitted through the object. The first light source assembly may include multiple and/or adjustable light sources. A second light source assembly may illuminate a top surface of the object, and a reflection analysis unit may collect resultant reflected light.

摘要翻译： 用于检查物体的光谱特性的装置可以包括配置成支撑和可释放地固定物体的卡盘，其中卡盘大于物体;第一光源组件，与卡盘一体并且被构造成照射物体的底面 具有预定的光谱和强度的光，以及用于收集和分析透过物体的光的透射分析单元。 第一光源组件可以包括多个和/或可调光源。 第二光源组件可以照亮物体的顶表面，并且反射分析单元可以收集所得到的反射光。

公开(公告)号：US07626164B2

公开(公告)日：2009-12-01

申请号：US11564726

申请日：2006-11-29

申请人： Young-Jee Yoon ,  Jung-Taek Lim ,  Tae-Sung Kim ,  Chung-Sam Jun ,  Sung-Hong Park

发明人： Young-Jee Yoon ,  Jung-Taek Lim ,  Tae-Sung Kim ,  Chung-Sam Jun ,  Sung-Hong Park

IPC分类号： G01N23/00

CPC分类号： G01N23/203

摘要： In an embodiment, a method of scanning a substrate, and a method and an apparatus for analyzing crystal characteristics are disclosed. A sequential scan on the scan areas using a first electron beam and a second electron beam are repeatedly performed. The electrons accumulated in the scan areas by the first electron beam are removed from the scan areas by the second electron beam. When a size of the scan area is substantially the same as a spot size of the first electron beam, adjacent scan areas partially overlap each other. When each of the scan areas is larger than a spot size of the first electron beam, the adjacent scan areas do not overlap each other. Images of the scan areas are generated using back-scattered electrons emitted from each of the scan areas by irradiating the first electron beam to analyze crystal characteristics of circuit patterns on the substrate.

摘要翻译： 在一个实施例中，公开了一种扫描衬底的方法，以及用于分析晶体特性的方法和装置。 使用第一电子束和第二电子束对扫描区域进行顺序扫描。 通过第二电子束从扫描区域去除由第一电子束累积在扫描区域中的电子。 当扫描区域的尺寸与第一电子束的光斑尺寸基本相同时，相邻的扫描区域彼此部分重叠。 当每个扫描区域大于第一电子束的光斑尺寸时，相邻的扫描区域彼此不重叠。 通过照射第一电子束来分析从每个扫描区域发射的背散射电子来分析扫描区域的图像，以分析衬底上的电路图案的晶体特性。

公开(公告)号：US20070222999A1

公开(公告)日：2007-09-27

申请号：US11710579

申请日：2007-02-26

申请人： Yun-Jung Lee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

发明人： Yun-Jung Lee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

IPC分类号： G01R31/26

CPC分类号： G01N21/9501

摘要： A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.

摘要翻译： 一种监测杂质浓度分布的方法，该方法包括：预先设置涂覆在基材上的薄层的监测位置，从监测位置监测的杂质的浓度分布沿薄层厚度方向移动，移动曝光器 用于将薄层的局部区域暴露于监测位置，使薄层的局部区域沿着薄层的厚度方向暴露，形成薄层暴露局部区域的形状轮廓，并监测密度 通过根据形状轮廓确定杂质的密度来描述杂质，及其装置。 可以监测杂质浓度分布，而不会破坏其上涂覆有薄层的基底，并且可以实时监测和控制用于形成薄层的杂质的量。

公开(公告)号：US07274471B2

公开(公告)日：2007-09-25

申请号：US11012005

申请日：2004-12-13

申请人： Koung-Su Shin ,  Kwang-Jun Yoon ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Dong-Jin Park

发明人： Koung-Su Shin ,  Kwang-Jun Yoon ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Dong-Jin Park

IPC分类号： G01B11/14

CPC分类号： G03F7/70616

摘要： A system and method of measuring a distance of semiconductor patterns is provided. The system includes a microscope and a control unit. The control unit calculates standard coordinates of standard points in view-fields that include spots, spot coordinates of spots with respect to standard points, real coordinates of spots from both of the standard coordinates and spot coordinates, and finally the distance between the two spots from the first and second real coordinates. Coordinates are determined using high magnification, in conjunction with pixel counting, allowing more precise distance measurements.

摘要翻译： 提供了测量半导体图形的距离的系统和方法。 该系统包括显微镜和控制单元。 控制单元计算包括斑点，相对于标准点的点的点坐标，来自两个标准坐标和点坐标的点的实际坐标的视场中的标准点的标准坐标，以及最后两个点之间的距离 第一个和第二个实际坐标。 使用高倍率，结合像素计数确定坐标，允许更精确的距离测量。

公开(公告)号：US06815236B2

公开(公告)日：2004-11-09

申请号：US10694882

申请日：2003-10-29

申请人： Tae-Kyoung Kim ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwang-Soo Kim ,  Koung-Su Shin ,  Jeong-Hyun Choi ,  Dong-Chun Lee

发明人： Tae-Kyoung Kim ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwang-Soo Kim ,  Koung-Su Shin ,  Jeong-Hyun Choi ,  Dong-Chun Lee

IPC分类号： H01L2166

CPC分类号： G01N21/3563 ,  G01N21/8422

摘要： A method of measuring a concentration of a material includes irradiating an infrared light onto a substrate having a layer including a first material and dopants, wherein the infrared light is partially absorbed by and partially transmitted through the substrate including the layer. Intensities of the infrared light absorbed in the first material and the dopants are computed according to light wave numbers by utilizing a difference between intensities of the infrared light before and after transmitting the substrate and layer and by utilizing a difference between intensities of the infrared light absorbed in the substrate and layer and absorbed in only the substrate. Concentrations of the dopants are obtained by utilizing a ratio of light wave number regions corresponding to predetermined intensities of infrared light absorbed in the dopants relative to light wave number regions corresponding to the predetermined intensity of infrared light absorbed in the first material.