摘要:
According to one embodiment, a control method for a magnetic disk device includes writing data by varying a phase of the array period of the plurality of magnetic elements or a phase of the time period of the recording signal in one section of the track from a corresponding phase in another section of the track, reading a reproduction signal from the track, and determining a phase shift between the array period of the plurality of magnetic elements and the time period of the recording signal, based on a reproduction signal read from the one section and a reproduction signal read from the other section. In another embodiment, a magnetic disk includes a track in which magnetic elements are magnetically separated and arranged in an array period, and a phase of the array period in one section is different from a phase in another section of the track.
摘要:
A polymer containing: a constitutional unit A that is derived from fluorosilsesquioxane having one addition polymerizable functional group in a molecule; a constitutional unit B that is derived from organopolysiloxane having an addition polymerizable functional group; and a constitutional unit C that is derived from an addition polymerizable monomer and has a group having a polymerizable unsaturated bond on a side chain, and optionally containing a constitutional unit D that is derived from an addition polymerizable monomer other than the fluorosilsesquioxane having one addition polymerizable functional group in a molecule, the organopolysiloxane having an addition polymerizable functional group and the addition polymerizable monomer having a functional group capable of introducing a group having a polymerizable unsaturated bond.
摘要:
A production process for a silicon compound represented by Formula (6), characterized by reacting a compound represented by Formula (4) with a compound represented by Formula (5): wherein all of the variables are defined in the specification.
摘要:
The present invention relates to a polishing apparatus for removing surface roughness produced at a peripheral portion of a substrate, or for removing a film formed on a peripheral portion of a substrate. The polishing apparatus includes a housing (3) for forming a polishing chamber (2) therein, a rotational table (1) for holding and rotating a substrate (W), a polishing tape supply mechanism (6) for supplying a polishing tape (5) into the polishing chamber (2) and supplied to the polishing chamber (2), a polishing head (35) for pressing the polishing tape (5) against a bevel portion of the substrate (W), a liquid supply (50) for supplying a liquid to a front surface and a rear surface of the substrate (W), and a regulation mechanism (16) for making an internal pressure of the polishing chamber (2) being set to be lower than an external pressure of the polishing chamber (2).
摘要:
A varnish for forming a liquid crystal alignment layer is prepared by formulating a polymer obtained by using a silsesquioxane derivative represented by the formula (1), and a solvent. In the formula (1), R independently represents an unsubstituted phenyl, cyclopentyl, cyclohexyl, or t-butyl group, and Y1 independently represents a group selected from the following formulae (a-1) to (a-6).
摘要:
A conventional silsesquioxane derivative has the problems that the functional groups are restricted and the chemical structure is not readily controlled and that it is expensive. The present inventors have developed a process for producing a silsesquioxane derivative at a high yield by a simple process in order to solve such problems. The novel silsesquioxane derivative according to the present invention is controlled in a structure thereof and has a functional group, which is excellent in reactivity with a target compound, to be modified. The present invention relates to a production process for a silsesquioxane derivative represented by Formula (2), characterized by using a silicon compound represented by Formula (1). In Formula (1) and Formula (2), R is a group selected from hydrogen, alkyl, aryl and arylalkyl; M is a monovalent alkaline metal atom; at least one of Y is a group represented by Formula (3), and the remainder of Y is hydrogen; R1 and R2 in Formula (3) represent the same group as defined for R; and Z is a functional group or a group having a functional group.
摘要:
The present invention provides a substrate processing apparatus and a substrate processing method suitable for use in an etching apparatus which etches a thin film formed on a peripheral portion of a substrate. The present invention also provides a substrate processing apparatus and a substrate processing method suitable for use in a cleaning apparatus which performs a cleaning process on a substrate which has been etched. The substrate processing apparatus for use in etching includes a substrate holder 11 for holding a substrate W substantially horizontally and rotating the substrate W, and a processing liquid supply unit 15 for supplying a processing liquid onto a peripheral portion of the substrate W which is being rotated in such a manner that the processing liquid is stationary with respect to the substrate W. The substrate processing apparatus for use in cleaning a substrate includes a substrate holder 54 for holding a substrate W substantially horizontally and rotating the substrate W, and a cleaning liquid supply unit 53 having a cleaning liquid outlet 53a which is oriented from a center of the substrate W toward a peripheral portion of the substrate W with an elevation angle of not more than 45° from a surface of the substrate W. The cleaning liquid supply unit 53 supplies a cleaning liquid to the surface of the substrate W at a flow velocity of not less than 0.1 m/s.
摘要:
Magnetic recording medium includes at least two layers having different magnetic anisotropy constants formed on a substrate and the perpendicular magnetic anisotropy of the second magnetic film of those magnetic films, far from the substrate surface, made equal to or larger than that of the first magnetic film near to the substrate surface, thus improving the magnetic isolation.
摘要:
A semiconductor substrate cleaning apparatus and method are capable of efficiently removing contamination from both the obverse and reverse sides of a semiconductor substrate. A single cleaning liquid supply nozzle for supplying a cleaning liquid to both the obverse and reverse sides of a semiconductor substrate to be cleaned is placed at a distance from the outer peripheral edge of the substrate. An ultrasonic vibrator applies ultrasonic waves to both the obverse and reverse sides of the substrate. Four driving rollers are disposed in contact with the outer peripheral edge of the substrate. The driving rollers are adapte to rotate while being engaged with the outer peripheral edge of the substrate thereby drivingly rotating the substrate.
摘要:
A cleaning apparatus comprises a holder for holding a substrate such as a semiconductor wafer horizontally and rotating the substrate about its central axis, while conducting a cleaning operation of the substrate by supplying a cleaning liquid thereto. The apparatus further comprises a cleaning vessel including a side wall encircling the substrate rotated by the holder to intercept the cleaning liquid supplied to and scattered from the rotating substrate and then finally drain the cleaning liquid. There is provided a vent duct for carrying gas from the inside of the cleaning vessel to the outside of the same. The vent duct includes an inlet provided at substantially the same level as that of the substrate for introducing the gas into the vent duct. The side wall may include an inner surface along which the cleaning liquid scattered from the substrate flows downward in a spiral manner, with the inner surface, being of a construction which impedes the spiral movement of the liquid in a circumferential or peripheral direction.