摘要:
A multiplexing system for ISDN circuits. Multiplexers in the system include data terminals, voice interfaces having voice trunks, high speed digital circuits and ISDN circuits, together with a control channel interface which connects trunking circuits by controlling calls on the control channel. When an outgoing voice call originates, data information from data terminals voice is multiplexed with compressed information from a voice interface and transmitted to trunking circuits. When calls originate, the control channel controls calls and connects them with trunking circuits. When using ISDN circuits, after setting up a communication channel for the circuits, a CPU controls calls to multiplex ISDN circuits on the control channel. By this structure decreasing the multiplexing ratio due to voice multiplexing call control on ISDN circuits can be eliminated when linking multiplexers with communication channels having high speed digital circuits and ISDN circuits.
摘要:
A telephone exchange system useful for a dealing speech system or the like is disclosed, which can accommodate large numbers of lines (or trunks) and permit improvement of the reliability and call connection processing capacity. The system comprises exchange sub-systems A (EX-A) and B (EX-B) capable of independently executing an exchange operation and each accommodating a terminal. The terminal has a speech channel switch for connecting a speech channel including a handset to either exchange sub-system A (EX-A) or B (EX-B). When the process of connecting a call is brought about in the terminal, it selects one of the exchange sub-systems and controls the speech channel switch for connecting the call to the selected exchange sub-system.
摘要:
One of the hand wheel and the brake ratchet wheel is provided with a cover portion extending toward the other thereof and having a circular peripheral surface which covers the lining plate, and the other of the hand wheel and the brake ratchet wheel is provided with a circular opposite peripheral surface opposed to the circular peripheral surface, so that opposite peripheral surfaces of those circular peripheral surfaces can be arranged adjacently to each other or have a scaling member interposed therebetween. Therefore, even when dust and rainwater enter a wheel cover for a hand wheel, these dust and rainwater can be prevented from further entering a mechanical brake.
摘要:
A manual hoist and traction machine wherein an outer diameter of a first lining plate constituting a mechanical brake is made smaller than an inner diameter of a driven disc of a handwheel. The outer diameter of a second lining plate and of a driven disc are made smaller than an inner diameter of a cylindrical portion of a braking ratchet wheel, and the first and second lining plates are formed of a lining raw material having improved performance with a compressive strength of 15 (Kgf/mm.sup.2) or more and a maximum strain of 12 (10.sup.-3 mm/mm) or more.
摘要:
A hoist and traction machine having a mechanical brake (13), wherein a not-relative (14)-rotatable operating handle (18) is axially movably an interposed between a stopper (17) provided at an axial end of a driving shaft (5) and a driving member (8) threadedably engaged with the driving shaft (5). Between the operating handle (18) and the stopper (17) there is provided an elastic biasing member (19) for biasing the operating handle (18) toward the driving member (8) The operating handle (18) is provided with engaging projections (31), the driving member (8) is provided with free rotation control surfaces (35) in elastic contact with the engaging projections (31) respectively, and the free rotation control surfaces (35) are formed in gradient surfaces for applying resistance against movement of the driving member (8) in the return direction with respect to free rotation operation by the operating handle (18) so as to enable the free rotation control state to be held up to a desired value, whereby an input range of a pulling force of a chain during the free rotation control is expanded without reducing operability of free rotation operation.
摘要:
A hoist and traction machine having a load sheave, a driving shaft and a driving member which is screw-threadedly engageable with the driving shaft. An operating handle 16 has an inner plate 16a and a brake cover 13a to cover a mechanical brake. The inner plate and the brake cover both have apertures of about the same size through which passes a portion of the driving member. A sleeve 102 which is separate from the brake cover and the operating lever is received in the apertures and held in place by a flange and a retaining ring so as to facilitate easy assembly.
摘要:
Technology for using a wiring of a superconductive material in semiconductor integrated circuit device. An isolation layer and/or a barrier layer are provided for preventing diffusion of harmful composition of the superconductive material for the semiconductor device. Control of a circuit can be made utilizing the characteristics of a superconductive material. Also, the characteristics of a superconductive material may be controlled. A method of forming a layer of superconductive material, well compatible with the widely used process of manufacturing integrated circuit devices, is also disclosed.
摘要:
An apparatus for manufacturing a multielement sintered material is provided, more particularly an appartus of the automated type which weighs and mixes predetermined amounts of powdery elements, molds the mixed elements and then sinters them.
摘要:
Of an amorphous Si film, a region to be formed into a lowly doped region such as the channel region of an MOS transistor is covered with a mask and an uncovered region is doped with an impurity. After this, the amorphous Si film is annealed and turned to signal crystal through solid phase epitaxial growth, and the mask itself is used as the electrode of a semiconductor device. By this impurity doping, a large-sized single-crystal Si film can be formed, and the impurity doping can be conducted in self-alignment with the electrode formation to produce a highly integrated semiconductor circuit.
摘要:
First conductivity type impurity ions are implanted at a predetermined depth all over a region where impurity ions are to be implanted, and second conductivity type impurity ions are implanted in a dose about twice as large as that of the first conductivity type impurity ions at substantially the same implantation depth of the first conductivity type impurity ions, followed by annealing.In this way, mutually contiguous first and second conductivity type regions having substantially the same impurity concentrations and located at substantially the same depths are formed.