公开(公告)号：US4729964A

公开(公告)日：1988-03-08

申请号：US852184

申请日：1986-04-15

申请人： Nobuyoshi Natsuaki ,  Masao Tamura ,  Yasuo Wada ,  Kiyonori Ohyu ,  Tadashi Suzuki ,  Hidekazu Okuhira ,  Akira Shintani ,  Shoji Syukuri

发明人： Nobuyoshi Natsuaki ,  Masao Tamura ,  Yasuo Wada ,  Kiyonori Ohyu ,  Tadashi Suzuki ,  Hidekazu Okuhira ,  Akira Shintani ,  Shoji Syukuri

IPC分类号： H01L21/265 ,  H01L21/266 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L21/22

CPC分类号： H01L21/2652 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823892 ,  H01L27/0928

摘要： First conductivity type impurity ions are implanted at a predetermined depth all over a region where impurity ions are to be implanted, and second conductivity type impurity ions are implanted in a dose about twice as large as that of the first conductivity type impurity ions at substantially the same implantation depth of the first conductivity type impurity ions, followed by annealing.In this way, mutually contiguous first and second conductivity type regions having substantially the same impurity concentrations and located at substantially the same depths are formed.

摘要翻译： 第一导电类型的杂质离子注入在杂质离子注入区域上的预定深度处，并且第二导电类型杂质离子以基本上为第一导电类型杂质离子的剂量约为两倍的剂量注入 第一导电型杂质离子的相同注入深度，然后进行退火。 以这种方式，形成具有基本上相同的杂质浓度并且位于基本上相同的深度处的相互邻接的第一和第二导电类型区域。

公开(公告)号：US4808546A

公开(公告)日：1989-02-28

申请号：US9476

申请日：1987-02-02

申请人： Masahiro Moniwa ,  Masanobu Miyao ,  Shoji Shukuri ,  Eiichi Murakami ,  Terunori Warabisako ,  Masao Tamura ,  Nobuyoshi Natsuaki ,  Kiyonori Ohyu ,  Tadashi Suzuki ,  Yuuichi Madokoro ,  Yasuo Wada

发明人： Masahiro Moniwa ,  Masanobu Miyao ,  Shoji Shukuri ,  Eiichi Murakami ,  Terunori Warabisako ,  Masao Tamura ,  Nobuyoshi Natsuaki ,  Kiyonori Ohyu ,  Tadashi Suzuki ,  Yuuichi Madokoro ,  Yasuo Wada

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/762 ,  H01L21/265 ,  H01L21/26

CPC分类号： H01L29/66772 ,  H01L21/2022 ,  H01L21/76248 ,  Y10S148/003 ,  Y10S148/048 ,  Y10S148/09 ,  Y10S148/154

摘要： Of an amorphous Si film, a region to be formed into a lowly doped region such as the channel region of an MOS transistor is covered with a mask and an uncovered region is doped with an impurity. After this, the amorphous Si film is annealed and turned to signal crystal through solid phase epitaxial growth, and the mask itself is used as the electrode of a semiconductor device. By this impurity doping, a large-sized single-crystal Si film can be formed, and the impurity doping can be conducted in self-alignment with the electrode formation to produce a highly integrated semiconductor circuit.

摘要翻译： 在非晶Si膜中，用掩模覆盖要形成诸如MOS晶体管的沟道区域的低掺杂区域的区域，并且未覆盖区域掺杂有杂质。 之后，通过固相外延生长使非晶Si膜退火并转向信号晶体，并且将掩模本身用作半导体器件的电极。 通过这种杂质掺杂，可以形成大尺寸的单晶Si膜，并且杂质掺杂可以与电极形成自对准，以产生高度集成的半导体电路。

公开(公告)号：US4655875A

公开(公告)日：1987-04-07

申请号：US836233

申请日：1986-03-04

申请人： Yasuo Wada ,  Masao Tamura ,  Nobuyoshi Natsuaki ,  Kiyonori Ohyu

发明人： Yasuo Wada ,  Masao Tamura ,  Nobuyoshi Natsuaki ,  Kiyonori Ohyu

IPC分类号： H01L21/266 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  C23C1/02

CPC分类号： H01L21/266 ,  Y10S438/945

摘要： Ions having a high energy is implanted using a mask of a stacked film consisting of a film formed from an amorphous material and a film formed from a metal having a large mass number.In this way, penetration of ions can be prohibited by a mask having a far smaller thickness than that of the conventional mask. Thus ions having a high energy can be implanted with a very high accuracy.

摘要翻译： 使用由由非晶材料形成的膜和由质量大的金属形成的膜构成的层叠膜的掩模来注入具有高能量的离子。 以这种方式，可以通过具有比常规掩模的厚度更小的掩模的掩模来阻止离子的穿透。 因此，可以以非常高的精度植入具有高能量的离子。

公开(公告)号：US4742025A

公开(公告)日：1988-05-03

申请号：US795271

申请日：1985-11-05

申请人： Kiyonori Ohyu ,  Nobuyoshi Natsuaki ,  Msao Tamura ,  Yasuo Wada

发明人： Kiyonori Ohyu ,  Nobuyoshi Natsuaki ,  Msao Tamura ,  Yasuo Wada

IPC分类号： H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/283 ,  H01L21/326

CPC分类号： H01L21/31111 ,  H01L21/32105 ,  H01L21/32134 ,  Y10S438/911

摘要： A desired portion of a refractory metal silicide film is oxidized by anodic oxidation to form oxides of silicon and of metal. The oxides formed are completely removed by etching. By so doing, the desired portion of the silicide film can be etched selectively without badly damaging an underlying silicon substrate or silicon dioxide film. Therefore, it is possible to easily affect patterning of the silicide film used for electrodes of MOS transistors and bipolar transistors as well as resistors and interconnections.

摘要翻译： 难熔金属硅化物膜的期望部分通过阳极氧化被氧化以形成硅和金属的氧化物。 形成的氧化物通过蚀刻被完全去除。 通过这样做，可以选择性地蚀刻硅化物膜的期望部分，而不会严重损坏下面的硅衬底或二氧化硅膜。 因此，可以容易地影响用于MOS晶体管和双极晶体管的电极以及电阻和互连的硅化物膜的图案化。

公开(公告)号：US4351674A

公开(公告)日：1982-09-28

申请号：US182825

申请日：1980-08-29

申请人： Isao Yoshida ,  Yasuo Wada ,  Masao Tamura ,  Masanobu Miyao ,  Makoto Ohkura ,  Nobuyoshi Natsuaki ,  Takashi Tokuyama

发明人： Isao Yoshida ,  Yasuo Wada ,  Masao Tamura ,  Masanobu Miyao ,  Makoto Ohkura ,  Nobuyoshi Natsuaki ,  Takashi Tokuyama

IPC分类号： H01L27/04 ,  H01L21/22 ,  H01L21/268 ,  H01L21/3215 ,  H01L21/822 ,  H01L29/78 ,  H01L21/265 ,  H01L21/263

CPC分类号： H01L21/268 ,  H01L21/32155 ,  Y10S148/091

摘要： A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance.Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.

摘要翻译： 含有高浓度杂质的区域和与其相邻的期望区域通过用激光束照射而熔化，从而将横向杂质扩散到所需区域并使所需区域呈现低电阻。 由于该方法只能执行杂质的横向扩散而不影响其它部分，因此形成高击穿电压MIS-FET，电阻等非常有用。

公开(公告)号：US4498951A

公开(公告)日：1985-02-12

申请号：US423206

申请日：1982-09-24

申请人： Masao Tamura ,  Naotsugu Yoshihiro ,  Nobuyoshi Natsuaki ,  Masanobu Miyao ,  Makoto Ohkura ,  Hideo Sunami ,  Takashi Tokuyama

发明人： Masao Tamura ,  Naotsugu Yoshihiro ,  Nobuyoshi Natsuaki ,  Masanobu Miyao ,  Makoto Ohkura ,  Hideo Sunami ,  Takashi Tokuyama

IPC分类号： H01L21/31 ,  H01L21/20 ,  H01L21/263 ,  H01L21/268 ,  C30B25/04

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02675 ,  H01L21/2636 ,  H01L21/268 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S148/003 ,  Y10S148/09 ,  Y10S148/123 ,  Y10S438/969

摘要： The whole surface of a polycrystalline or amorphous semiconductor film deposited so as to continuously cover the surface of a single-crystal substrate and an insulating film is irradiated with a laser beam or electron beam, thereby to selectively melt only those parts of the polycrystalline or amorphous semiconductor film which overlie the insulating film. Thus, a single-crystal semiconductor film is formed only the insular insulating film formed on the single-crystal substrate.

摘要翻译： 用激光束或电子束照射沉积以连续覆盖单晶衬底和绝缘膜的表面的多晶或非晶半导体膜的整个表面，从而仅选择地熔化多晶或非晶 覆盖绝缘膜的半导体膜。 因此，单晶半导体膜仅形成在单晶衬底上形成的绝缘膜。

公开(公告)号：US4565584A

公开(公告)日：1986-01-21

申请号：US460801

申请日：1983-01-25

申请人： Masao Tamura ,  Makoto Ohkura ,  Masanobu Miyao ,  Nobuyoshi Natsuaki ,  Naotsugu Yoshihiro ,  Takashi Tokuyama ,  Hiroshi Ishihara

发明人： Masao Tamura ,  Makoto Ohkura ,  Masanobu Miyao ,  Nobuyoshi Natsuaki ,  Naotsugu Yoshihiro ,  Takashi Tokuyama ,  Hiroshi Ishihara

IPC分类号： H01L21/20 ,  C30B1/02 ,  C30B1/08 ,  H01L21/31 ,  H01L21/263 ,  H01L21/205

CPC分类号： C30B1/08 ,  C30B1/023 ,  Y10S148/003 ,  Y10S148/09 ,  Y10S148/123 ,  Y10S438/909

摘要： An amorphous or polycrystalline film which continuously covers the exposed surface of a single crystal substrate and an insulating film, is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.

摘要翻译： 连续覆盖单晶基板和绝缘膜的暴露表面的非晶或多晶膜沉积在超高真空中，然后进行热处理。 在远低于现有技术方法的温度下对该膜进行固相外延生长，从而形成单晶膜。

公开(公告)号：US07250376B2

公开(公告)日：2007-07-31

申请号：US11132289

申请日：2005-05-19

申请人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

发明人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

IPC分类号： H01L21/31

CPC分类号： H01L21/31662 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67213 ,  H01L21/67219 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/42364 ,  H01L29/518 ,  Y10S148/023 ,  Y10S148/116 ,  Y10S438/935

摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

摘要翻译： 制造本发明的半导体集成电路器件的方法包括将由氢和氧产生的低浓度水的氧化物质通过催化作用输送到半导体晶片的主表面或其附近，以及 在半导体晶片的主表面上以氧化膜生长速率形成用作MOS晶体管的栅极绝缘膜的厚度为5nm或更小的薄氧化膜，其足以确保形成氧化膜的保真度，以及 氧化膜厚度均匀。

公开(公告)号：US06855642B2

公开(公告)日：2005-02-15

申请号：US10424105

申请日：2003-04-28

申请人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

发明人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/306 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L21/469 ,  H01L21/76 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L21/31662 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67213 ,  H01L21/67219 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/42364 ,  H01L29/518 ,  Y10S148/023 ,  Y10S148/116 ,  Y10S438/935

摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

公开(公告)号：US06784116B2

公开(公告)日：2004-08-31

申请号：US10355301

申请日：2003-01-31

申请人： Yoshikazu Tanabe ,  Isamu Asano ,  Makoto Yoshida ,  Naoki Yamamoto ,  Masayoshi Saito ,  Nobuyoshi Natsuaki

发明人： Yoshikazu Tanabe ,  Isamu Asano ,  Makoto Yoshida ,  Naoki Yamamoto ,  Masayoshi Saito ,  Nobuyoshi Natsuaki

IPC分类号： H01L2131

CPC分类号： H01L21/28247 ,  H01L21/28061 ,  H01L21/28176 ,  H01L21/32105 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823828 ,  H01L21/823857 ,  H01L27/1052 ,  H01L27/10873 ,  H01L27/10894 ,  H01L29/4941

摘要： With a view to preventing the oxidation of a metal film at the time of light oxidation treatment after gate patterning and at the same time to making it possible to control the reproducibility of oxide film formation and homogeneity of oxide film thickness at gate side-wall end portions, in a gate processing step using a poly-metal, a gate electrode is formed by patterning a gate electrode material which has been deposited over a semiconductor wafer 1A having a gate oxide film formed thereon and has a poly-metal structure and then, the principal surface of the semiconductor wafer 1A heated to a predetermined temperature or vicinity thereof is supplied with a hydrogen gas which contains water at a low concentration, the water having been formed from hydrogen and oxygen by a catalytic action, to selectively oxidize the principal surface of the semiconductor wafer 1A, whereby the profile of the side-wall end portions of the gate electrode is improved.