公开(公告)号：US08147153B2

公开(公告)日：2012-04-03

申请号：US12913420

申请日：2010-10-27

申请人： Hirofumi Takeguchi ,  Junji Nakamura ,  Kousuke Yoshihara

发明人： Hirofumi Takeguchi ,  Junji Nakamura ,  Kousuke Yoshihara

IPC分类号： G03D5/00 ,  G03C1/00

CPC分类号： G03D5/00 ,  B08B3/04 ,  H01L21/67051

摘要： The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step 5), stopping discharging the rinsing liquid in a state where the developer puddle remains at least in a peripheral part of the substrate (step 6), and rotating the substrate at a high rotating speed to shake the developer remaining on the substrate off the substrate together with the rinsing liquid (step 7).

摘要翻译： 本发明提供了能够令人满意地冲洗抗蚀剂膜的表面的冲洗方法，而与抗蚀剂膜的表面的状态无关，从而可以减少由显影产生的残留物引起的显影缺陷。 漂洗通过用于显影曝光图案的显影工艺处理的基材的冲洗方法包括以下步骤：将冲洗液体排出到通过显影过程处理的基材的中心部分上，并在基材停止或旋转时涂覆显影剂水坑 （步骤5），在显影剂熔池至少保持在基板的周边部分的状态下停止排出冲洗液体（步骤6），并且以高转速旋转基板以摇动残留在基板上的显影剂 基底与冲洗液一起（步骤7）。

公开(公告)号：US20120057862A1

公开(公告)日：2012-03-08

申请号：US13221072

申请日：2011-08-30

申请人： Shinichi HAYASHI ,  Yuichi Douki ,  Akira Miyata ,  Yuuichi Yamamoto ,  Kousuke Yoshihara ,  Nobuaki Matsuoka ,  Suguru Enokida

发明人： Shinichi HAYASHI ,  Yuichi Douki ,  Akira Miyata ,  Yuuichi Yamamoto ,  Kousuke Yoshihara ,  Nobuaki Matsuoka ,  Suguru Enokida

IPC分类号： G03D5/00

CPC分类号： H01L21/6715 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67745

摘要： A process block is formed by arranging a heating-process related block on the side of a carrier block, a group of liquid-process related unit blocks, and a heating block on the side of an interface block, in this order from the side of the carrier block to the side of the interface block. The group of liquid-process related unit blocks is composed of: a group of unit blocks for coating films that is formed by stacking upward a unit block for an antireflection film, a unit block for a resist film, and a unit bock for an upper layer film, in this order; and unit blocks for developing that are stacked on one another in the up and down direction with respect to the group of unit blocks for coating films. Liquid process modules of each of the liquid-process related unit blocks are arranged on the right and left sides of a transfer path for a substrate.

摘要翻译： 通过在接口块的侧面上的载体块，一组液体处理相关单元块和加热块的侧面上布置加热处理相关块来形成处理块，从 载波块到接口块的一侧。 一组液相处理相关单元块由以下组成：一组用于涂覆膜的单元块，其通过向上堆叠用于抗反射膜的单元块，用于抗蚀剂膜的单元块和用于上部的单元块 层膜，按顺序; 以及用于显影的单元块相对于用于涂膜的单元块组在上下方向上彼此堆叠。 每个液体处理相关单元块的液体处理模块布置在用于基板的传送路径的右侧和左侧。

公开(公告)号：US08043657B2

公开(公告)日：2011-10-25

申请号：US11851747

申请日：2007-09-07

申请人： Kousuke Yoshihara ,  Tomohiro Iseki

发明人： Kousuke Yoshihara ,  Tomohiro Iseki

IPC分类号： B05D3/12

CPC分类号： H01L21/6715 ,  G03F7/162

摘要： The present invention supplies a solvent to the front surface of a substrate while rotating the substrate. Subsequently, the substrate is acceleratingly rotated to a first number of rotations, and a resist solution is supplied to a central portion of the substrate during the accelerating rotation and the rotation at the first number of rotations. Thereafter, the substrate is deceleratingly rotated to a second number of rotations, and after the number of rotations of the substrate reaches the second number of rotations, the resist solution is discharged to the substrate. The substrate is then acceleratingly rotated to a third number of rotations higher than the second number of rotations so that the substrate is rotated at the third number of rotations. According to the present invention, in application of the resist solution by spin coating, the consumption of the resist solution can be suppressed, and a high in-plane uniformity can be obtained for the film thickness of the resist film.

摘要翻译： 本发明在旋转衬底的同时向衬底的前表面提供溶剂。 随后，基板被加速旋转到第一转数，并且在加速旋转和第一转数旋转期间，将抗蚀剂溶液供应到基板的中心部分。 此后，基板减速旋转到第二转数，在基板的转数达到第二转数之后，将抗蚀剂溶液排出到基板。 然后将衬底加速旋转到高于第二转数的第三转数，使得衬底以第三转数旋转。 根据本发明，通过旋涂的抗蚀剂溶液的应用，可以抑制抗蚀剂溶液的消耗，并且可以获得抗蚀剂膜的膜厚度的高的面内均匀性。

公开(公告)号：US20050173396A1

公开(公告)日：2005-08-11

申请号：US10968033

申请日：2004-10-20

申请人： Kazuhiko Ooshima ,  Yuichi Terashita ,  Momoko Shizukuishi ,  Hideo Shite ,  Kousuke Yoshihara

发明人： Kazuhiko Ooshima ,  Yuichi Terashita ,  Momoko Shizukuishi ,  Hideo Shite ,  Kousuke Yoshihara

IPC分类号： F27B17/00 ,  F27D11/00 ,  H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67109 ,  F27B17/0025 ,  H01L21/67748 ,  H01L21/67751

摘要： A heat-treating apparatus comprises a table having a heating element buried therein, a plate-like target object to be processed being disposed on the table so as to be heated to a prescribed temperature, a support member for supporting the target object and movable in the vertical direction relative to the table such that the support member is moved to permit the target object supported by the support member to be disposed on the table or is moved away from the table, a cover surrounding the upper portion of the table, and a casing surrounding the lower portion of the table and combined with the cover so as to form a process chamber. When the process chamber is opened, the support member permits the target object to be housed inside the cover.

摘要翻译： 一种热处理装置，具有埋设有加热元件的工作台，将要加工的板状待处理对象物放置在工作台上以被加热到规定温度的状态下， 相对于桌子的垂直方向，使得支撑构件被移动以允许由支撑构件支撑的目标对象被布置在桌子上或者被移动离开桌子，围绕桌子的上部的盖子以及 壳体围绕桌子的下部并与盖组合以形成处理室。 当处理室打开时，支撑构件允许目标物体容纳在盖内。

公开(公告)号：US20050126474A1

公开(公告)日：2005-06-16

申请号：US11043945

申请日：2005-01-28

申请人： Kousuke Yoshihara ,  Yuichi Terashita

发明人： Kousuke Yoshihara ,  Yuichi Terashita

IPC分类号： H01L21/203 ,  B05D1/00 ,  B05D3/10 ,  G03F7/16 ,  H01L21/00 ,  B05C11/02 ,  B05C13/00

CPC分类号： H01L21/6715 ,  B05D1/005 ,  B05D3/104 ,  G03F7/162

摘要： A coating film is formed by the steps of supplying a mixture of a solvent for dissolving a coating liquid and a volatilization suppressing substance for suppressing the volatilization of the solvent onto the surface of the target substrate W, expanding the mixture onto the entire surface of the target substrate W, and supplying a coating liquid onto substantially the central portion of the target substrate W that has received the mixture while rotating the target substrate W thereby expanding the coating liquid outward in the radial direction of the target substrate W thereby forming a coating film.

摘要翻译： 通过以下步骤形成涂膜，所述方法是将用于溶解涂布液的溶剂和用于抑制溶剂挥发的挥发抑制物质的混合物的混合物供给到目标基板W的表面上，将混合物扩展到 目标基板W，并且在旋转目标基板W的同时将涂布液供给到已经接收了混合物的目标基板W的大致中央部分，从而使涂布液沿目标基板W的径向向外扩张，从而形成涂膜 。

公开(公告)号：US06673151B2

公开(公告)日：2004-01-06

申请号：US10345293

申请日：2003-01-16

申请人： Kousuke Yoshihara ,  Akihiro Fujimoto

发明人： Kousuke Yoshihara ,  Akihiro Fujimoto

IPC分类号： B05C1500

CPC分类号： H01L21/6715

摘要： A spin chuck for holding a wafer to the front face of which a resist solution is supplied, a cup for housing the spin chuck and forcibly exhausting an atmosphere around the wafer by exhaust from the bottom thereof, and an air flow control plate, provided in the cup to surround the outer periphery of the wafer, for controlling an air flow in the vicinity of the wafer are provided. Accordingly, a state of special air flow at an outer edge portion of a substrate to be processed can be eliminated, thereby preventing an increase in film thickness at the outer edge portion.

摘要翻译： 用于将晶片保持在供给抗蚀剂溶液的正面的旋转卡盘，用于容纳旋转卡盘的杯，并且从其底部排出强制地排出晶片周围的气氛;以及气流控制板，其设置在 提供围绕晶片的外周的杯，用于控制晶片附近的空气流。 因此，能够消除处理基板的外缘部的特殊气流的状态，防止外缘部的膜厚增大。

公开(公告)号：US08940649B2

公开(公告)日：2015-01-27

申请号：US13181565

申请日：2011-07-13

申请人： Kousuke Yoshihara ,  Shinichi Hatakeyama

发明人： Kousuke Yoshihara ,  Shinichi Hatakeyama

IPC分类号： H01L21/469 ,  H01L21/67

CPC分类号： H01L21/6715

摘要： A coating treatment method includes: a first step of rotating a substrate at a first rotation number; a second step of rotating the substrate at a second rotation number being slower than the first rotation number; a third step of rotating the substrate at a third rotation number being faster than the second rotation number and slower than the first rotation number; a fourth step of rotating the substrate at a fourth rotation number being slower than the third rotation number; and a fifth step of rotating the substrate at a fifth rotation number being faster than the fourth rotation number. A supply of a coating solution to a central portion of the substrate is continuously performed from the first step to a middle of the second step or during the first step, and the fourth rotation number is more than 0 rpm and 500 rpm or less.

摘要翻译： 一种涂布处理方法，包括：以第一转数旋转基板的第一工序; 第二步骤，以比第一转数慢的第二转数旋转衬底; 第三步骤，以比所述第二转数快并且慢于所述第一转数的第三转数旋转所述衬底; 第四步骤，以比第三转数慢的第四转数旋转衬底; 以及以比第四转数快的第五转数旋转衬底的第五步骤。 从第一步骤到第二步骤的中间或第一步骤期间，连续地向基材的中心部分供给涂布液，第四转数大于0rpm，500rpm以下。

公开(公告)号：US20120328273A1

公开(公告)日：2012-12-27

申请号：US13524023

申请日：2012-06-15

申请人： Hisashi KAWANO ,  Ryouichi Uemura ,  Kousuke Yoshihara ,  Shigeru Kasai ,  Keiji Tanouchi ,  Makoto Muramatsu ,  Mitsuaki Iwashita ,  Masatake Yoneda ,  Kazuhiro Ooya

发明人： Hisashi KAWANO ,  Ryouichi Uemura ,  Kousuke Yoshihara ,  Shigeru Kasai ,  Keiji Tanouchi ,  Makoto Muramatsu ,  Mitsuaki Iwashita ,  Masatake Yoneda ,  Kazuhiro Ooya

IPC分类号： H05B6/00

CPC分类号： H01L21/67115 ,  H05B3/0033

摘要： Disclosed is a thermal processing apparatus and method that can acquire a high throughput and reduce the occupation area of the thermal processing apparatus. A wafer is heated by an LED module that irradiates infrared light corresponding to the absorption wavelength of the wafer, and therefore, the wafer can be rapidly heated. Since an LED is used as a heat source and a temperature rise of LED is small, a cooling process after the heating process can be performed in the same process area as the heating process area. As a result, an installation area of the thermal processing apparatus can be reduced. Since the time for moving between a heating process area and a cooling process area can be saved, a time required for a series of processes including the heating process and the subsequent cooling process can be shortened, thereby improving a throughput.

摘要翻译： 公开了一种可以获得高产量并减少热处理装置的占用面积的热处理装置和方法。 通过照射与晶片的吸收波长相对应的红外光的LED模块对晶片进行加热，因此可以快速加热晶片。 由于将LED用作热源并且LED的温度升高很小，因此可以在与加热处理区域相同的处理区域中进行加热处理之后的冷却处理。 结果，可以减少热处理装置的安装面积。 由于可以节省在加热处理区域和冷却处理区域之间移动的时间，因此可以缩短包括加热处理和随后的冷却处理的一系列处理所需的时间，从而提高生产量。

公开(公告)号：US08287954B2

公开(公告)日：2012-10-16

申请号：US12859790

申请日：2010-08-20

申请人： Kousuke Yoshihara ,  Hiroichi Inada

发明人： Kousuke Yoshihara ,  Hiroichi Inada

IPC分类号： B05D3/12

CPC分类号： H01L21/67051 ,  G03F7/162 ,  H01L21/6715

摘要： There is provided an apparatus including: a processing cup having an opening opened upward to allow a substrate to be loaded and unloaded, an exhaust port for exhausting an unnecessary atmosphere produced in forming a film applied on the substrate, and an aspiration port for aspirating external air; and an aspiration device aspirating the unnecessary atmosphere through the exhaust port, wherein when the substrate is accommodated in the opening of the processing cup, the substrate has a perimeter spaced from the opening by a predetermined gap, and below the substrate accommodated in the processing cup there is formed an exhaust flow path extending from the aspiration port to the exhaust port.

摘要翻译： 提供了一种装置，包括：处理杯，其具有向上开口以允许衬底被装载和卸载的开口;排出端口，用于排出在形成施加在衬底上的膜时产生的不必要的气氛;以及抽吸端口，用于吸入外部 空气; 以及抽吸装置，其通过所述排气口吸入不需要的气氛，其中当所述基板容纳在所述加工杯的开口中时，所述基板具有与所述开口间隔开预定间隙的周边，并且在容纳在所述加工杯中的所述基板的下方 形成从抽吸口向排气口延伸的排气流路。

公开(公告)号：US20120218531A1

公开(公告)日：2012-08-30

申请号：US13397043

申请日：2012-02-15

申请人： Kouichi Hontake ,  Takafumi Niwa ,  Hideharu Kyouda ,  Kousuke Yoshihara

发明人： Kouichi Hontake ,  Takafumi Niwa ,  Hideharu Kyouda ,  Kousuke Yoshihara

IPC分类号： G03B27/32

CPC分类号： G03F7/40 ,  G03F7/3021 ,  G03F7/325

摘要： Provided are a developing method and a developing apparatus that can reduce process time and improve throughput in a developing process using a developer containing organic solvent. The present invention relates to a developing method for performing developing by supplying a developer containing organic solvent to a substrate having its surface coated with a resist and exposed. The developing method of the invention includes a liquid film forming step for forming a liquid film by supplying the developer from a developer supply nozzle to a central portion of the substrate while rotating the substrate, and a developing step for developing the resist film on the substrate while rotating the substrate in a state where the supply of the developer from the developer supply nozzle to the substrate is stopped and in such a manner that the liquid film of the developer would not dry.

摘要翻译： 提供一种显影方法和显影装置，其可以使用含有有机溶剂的显影剂在显影过程中缩短处理时间并提高生产量。 本发明涉及通过将含有有机溶剂的显影剂供给到其表面被抗蚀剂涂布并暴露的基材来进行显影的显影方法。 本发明的显影方法包括：液体成膜步骤，用于通过在显影剂供应喷嘴中将显影剂供给到基板的中心部分同时旋转基板来形成液膜;以及显影步骤，用于在基板上显影抗蚀剂膜 同时在显影剂从显影剂供给喷嘴供给到基板停止的状态下以使得显影剂的液膜不会干燥的方式旋转基板。