摘要:
Fluoroalcohol compounds of formula (1) are useful in producing polymers which are used as the base resin to formulate radiation-sensitive resist compositions having transparency to radiation having a wavelength of up to 500 nm and improved development characteristics. R1 is hydrogen or a monovalent C1-C20 hydrocarbon group in which any constituent —CH2— moiety may be replaced by —O— or —C(═O)—, Aa is a (k1+1)-valent C1-C20 hydrocarbon or fluorinated hydrocarbon group, and k1 is 1, 2 or 3.
摘要:
A hydroxyl-containing monomer of formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are monovalent C1-C15 hydrocarbon groups, or R2 and R3 may form an aliphatic ring. The monomers are useful for the synthesis of polymers which have high transparency to radiation of up to 500 nm and the effect of controlling acid diffusion so that the polymers may be used as a base resin to formulate radiation-sensitive resist compositions having a high resolution.
摘要:
Polymerizable silicon-containing compounds of formula (1) wherein R1 is hydrogen, halogen or monovalent organic group are polymerized into polymers. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity and resolution at a wavelength of less than 300 nm, and high resistance to oxygen plasma etching, and thus lends itself to micropatterning for the fabrication of VLSIs
摘要:
Resist compositions comprising basic compounds having a benzimidazole skeleton and a polar functional group have an excellent resolution and an excellent focus margin and are useful in microfabrication using electron beams or deep-UV light.
摘要:
Resist compositions comprising basic compounds having an imidazole skeleton and a polar functional group have an excellent resolution and an excellent focus margin and are useful in microfabrication using electron beams or deep-UV light.
摘要:
Tertiary alcohol compounds of formula (1) are novel wherein R1 and R2 are C1–10 alkyl groups which may have halogen substituents, or R1 and R2 may form an aliphatic hydrocarbon ring, Y and Z are a single bond or a divalent C1–10 organic group, and k=0 or 1. Using the tertiary alcohol compounds as a monomer, polymers are obtained. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, etching resistance and substrate adhesion
摘要:
Resist compositions comprising basic compounds having a benzimidazole skeleton and a polar functional group have an excellent resolution and an excellent focus margin and are useful in microfabrication using electron beams or deep-UV light.
摘要:
Photoacid generators generate sulfonic acids of formula (1a) upon exposure to high-energy radiation. ROC(═O)R1—COOCH2CF2SO3−H+ (1a) RO is OH or C1-C20 organoxy, R1 is a divalent C1-C20 aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.
摘要:
Chemically amplified resist compositions comprising nitrogen-containing organic compounds having an aromatic carboxylic acid ester structure have an excellent resolution and provide a precise pattern profile and are useful in microfabrication using electron beams or deep-UV light.
摘要:
Tetrahydrofuran compounds of formula (1) wherein the broken line represents a single bond, a divalent organic group, or a structure in which the alicyclic structure in the form of norbornene or tetracyclo[4.4.0.12,5.17,10]dodecene and the tetrahydrofuran cyclic structure share one or two constituent carbon atoms, and k is 0 or 1 are novel and useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography