摘要:
This invention relates to a method of fabrication used for semiconductor integrated circuit devices, and more specifically, in the formation of self-aligned dual damascene interconnects and vias, which incorporates low dielectric constant intermetal dielectrics (IMD) and utilizes silylated top surface imaging (TSI) photoresist, with a single or multi-step selective reactive ion etch (RIE) process, to form trench/via opening. The invention incorporates the use of a silylated top surface imaging (TSI) resist etch barrier layer to form the via pattern, in the first level of a dual damascene process. Two variations of using the top surface imaging (TSI) resist, with and without leaving an exposed region in place, are described in the first and second embodiment of the invention, and in addition, a thin dielectric layer is made use of just below the resist layer. Provided adhesion between the top surface imaging (TSI) photoresist and the low dielectric constant intermetal dielectric (IMD) is good, the thin dielectric layer described above can be omitted, yielding the third and fourth embodiment of the invention. Special attention in the process is given to protecting the integrity of the low dielectric constant intermetal dielectric (ILD) material, selected from the group consisting of organic based or carbon doped silicon dioxide.
摘要:
A method and structure for forming a damascene structure with reduced capacitance by forming one or more of: the passivation layer, the etch stop layer, and the cap layer using a low dielectric constant material comprising carbon nitride, boron nitride, or boron carbon nitride. The method begins by providing a semiconductor structure having a first conductive layer thereover. A passivation layer is formed on the first conductive layer. A first dielectric layer is formed over the passivation layer, and an etch stop layer is formed over the first dielectric layer. A second dielectric layer is formed over the etch stop layer, and an optional cap layer can be formed over the second dielectric layer. The cap layer, the second dielectric layer, the etch stop layer, and the first dielectric layer are patterned to form a via opening stopping on said passivation layer and a trench opening stopping on the first conductive layer. A carbon nitride passivation layer, etch stop layer, or cap layer can be formed by magnetron sputtering from a graphite target in a nitrogen atmosphere. A boron nitride passivation layer, etch stop layer, or cap layer can be formed by PECVD using B.sub.2 H.sub.6, ammonia, and nitrogen. A boron carbon nitride passivatation layer, etch stop layer, or cap layer can be formed by magnetron sputtering from a graphite target in a nitrogen and B.sub.2 H.sub.6 atmosphere.
摘要:
A new method of forming liquid crystal displays has been achieved. Metal conductors are provided in an insulating layer overlying a semiconductor substrate. A first isolation layer is deposited. A first silicon nitride layer is deposited. The first silicon nitride layer is patterned to form openings for planned vias overlying the metal conductors. A second isolation layer is deposited. A second silicon nitride layer is deposited. The second silicon nitride layer is patterned to form masks overlying where dummy supports for the metal pixels are planned and to form openings to extend the planned vias. A third isolation layer is deposited. The third isolation layer is patterned to form openings for the planned metal pixels. The second isolation layer and the first isolation layer are etched through to complete the vias and the dummy supports. A metal layer is deposited filling the openings for the metal pixels, the dummy support, and the vias. The metal layer is polished down to the top surface of the third isolation layer to complete the metal pixels. A thin film passivation is deposited. A liquid crystal layer is deposited. A transparent image point electrode is formed to complete the liquid crystal display.
摘要:
A method for fabricating a metal-oxide-metal capacitor using a dual damascene process is described. A dielectric layer is provided overlying a semiconductor substrate. A dual damascene opening in the dielectric layer is filled with copper to form a copper via underlying a copper line. A first metal layer is deposited overlying the copper line and patterned to form a bottom capacitor plate contacting the copper line. A capacitor dielectric layer is deposited overlying the bottom capacitor plate. A second metal layer is deposited overlying the capacitor dielectric layer and patterned to form a top capacitor plate to complete fabrication of a metal-oxide-metal capacitor.
摘要:
An improved cathodoluminescent device with a one piece spacer structure which is rigidly connected to two sets of grid electrodes. The spacer structure defines holes therein that spatially match pixel dots on an anode on a face plate. One set of grid electrodes comprises layers of electrically conductive material on surfaces within at least some of the holes of the spacer structure. The two sets of grid electrodes and different spacer layers may be attached together to form a one piece spacer structure integral with the two sets of grid electrodes. The display device is then simply assembled by matching each of the holes of the spacer structure with a pixel dot on the face plate, and attaching the structure to the face plate and a back plate.
摘要:
The invention discloses a novel LCD projector, comprising an imaging system with a sealed shell of the LCD projector, an illumination system with PCS function and transparent antifouling coating, and an LED light source system, wherein the sealed shell is provided with lens, optical, and first radiator assemblies. The invention is disposed in a sealed shell; a heat dissipation assembly is installed at the liquid crystal display outlet. The optical device can be positioned in a dust-free environment for the sealed shell. The useless P light for conventional LCD projector imaging is converted into the useful S light, improving light utilization and increasing projection brightness under the same power. The transparent antifouling coating is applied to the illumination section, reducing dust absorption and improving system cleanliness. A microlens is used to converge the LED light source in the LED illumination section, improving light effects and uniformity.
摘要:
A method and apparatus of processing and displaying images captured using an in vivo capsule camera are disclosed. One or more overlapped areas between a target image and each image in a neighboring image group are determined, which comprises at least two neighboring images around the target image. Marked pixels in the target image are then determined, where a pixel in the target image is designated as a marked pixel if the pixel is within an overlapped area between the target image and at least one neighboring image. If the total number of the marked pixels in the target image exceeds a threshold and the number of the marked pixels associated with the overlapped area(s) between the target image and any image in the neighboring image group is below the threshold, the target image is excluded from a set of images to be displayed on a display device.
摘要:
A diesel fuel composition is disclosed, as well as a method for reducing NOx and smoke emissions from a diesel engine at minimum fuel consumption which comprises adding to the diesel engine at least one diesel fuel or blending component for a diesel fuel which has a combination of a low T50 in the range of from 190° C. to 280° C., a high cetane number in the range of from 31 to 60, and optionally a high distillation curve slope in the range of from 58° C. to 140° C., which combination is effective to afford a combination of the lowest NOx and smoke emissions at the lowest fuel consumption at independent engine control values for the diesel engine that are optimum to afford production of a combination of the lowest NOx and smoke emissions at the lowest fuel consumption, whereby the NOx and smoke emissions from the diesel engine are reduced by at least 10% and 15%, respectively.
摘要:
Model evaluation and circuit simulation/verification is performed in a graphical processing unit (GPU). A multitude of first texture data corresponding to size parameters of devices are stored. A multitude of second texture data corresponding to instance parameters of the devices are stored. A multitude of third texture data corresponding to models of the devices are stored. A multitude of fourth texture data corresponding to terminal voltages received by the device are stored. A multitude of links linking each device instance to an associated device model, size parameters and instance parameters are stored. A quad having a size defined by the multitude of links is drawn by the quad in the GPU. Each thread in the quad is assigned to a different one of the multitude of links. The computations are carried out in each thread using the linked data to perform the model evaluation.
摘要:
Embodiments of the invention describe a method for reducing a blur in an image of a scene. First, we acquire a set of images of the scene, wherein each image in the set of images includes an object having a blur associated with a point spread function (PSF) forming a set of point spread functions (PSFs), wherein the set of PSFs is suitable for null-filling operation. Next, we invert jointly the set of images and the set of PSFs to produce an output image having a reduced blur.