公开(公告)号：US20090146198A1

公开(公告)日：2009-06-11

申请号：US12216556

申请日：2008-07-08

申请人： In-Sung Joe ,  Yoon-dong Park ,  Young-gu Jin ,  Seung-hyuk Chang

发明人： In-Sung Joe ,  Yoon-dong Park ,  Young-gu Jin ,  Seung-hyuk Chang

IPC分类号： H01L31/113

CPC分类号： H01L27/14621 ,  H01L27/14627 ,  H01L31/02165

摘要： Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.

摘要翻译： 提供了光电二极管，图像感测装置和图像传感器。 图像感测装置包括在其上表面上具有金属图案层的p-n结光电二极管。 图像传感器包括图像感测装置和形成在金属图案层上方的微透镜。 金属图案层对具有第一波长的光进行滤光。

公开(公告)号：US08148762B2

公开(公告)日：2012-04-03

申请号：US12216556

申请日：2008-07-08

申请人： In-Sung Joe ,  Yoon-dong Park ,  Young-gu Jin ,  Seung-hyuk Chang

发明人： In-Sung Joe ,  Yoon-dong Park ,  Young-gu Jin ,  Seung-hyuk Chang

IPC分类号： H01L31/062

CPC分类号： H01L27/14621 ,  H01L27/14627 ,  H01L31/02165

摘要： Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.

摘要翻译： 提供了光电二极管，图像感测装置和图像传感器。 图像感测装置包括在其上表面上具有金属图案层的p-n结光电二极管。 图像传感器包括图像感测装置和形成在金属图案层上方的微透镜。 金属图案层对具有第一波长的光进行滤光。

公开(公告)号：US08143685B2

公开(公告)日：2012-03-27

申请号：US12508079

申请日：2009-07-23

申请人： Dae-kil Cha ,  Young-gu Jin ,  Bok-ki Min ,  Yoon-dong Park

发明人： Dae-kil Cha ,  Young-gu Jin ,  Bok-ki Min ,  Yoon-dong Park

IPC分类号： H01L31/0232

CPC分类号： H01L27/14643 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/14625

摘要： An image sensor includes a plurality of pixels disposed in an array, each pixel comprising a first region and a second region, the first region and the second region separated from each other in a semiconductor layer, and doped with impurities having different conductivities from each other, a photoelectric conversion region formed between the first and second regions, and at least one metal nanodot that focuses an incident light onto the photoelectric conversion region.

摘要翻译： 图像传感器包括排列成阵列的多个像素，每个像素包括第一区域和第二区域，第一区域和第二区域在半导体层中彼此分离，并且掺杂有彼此不同电导率的杂质 形成在第一和第二区域之间的光电转换区域和将入射光聚焦到光电转换区域上的至少一个金属纳米点。

公开(公告)号：US20100008136A1

公开(公告)日：2010-01-14

申请号：US12458294

申请日：2009-07-08

申请人： Kwang-soo Seol ,  Sung-Il Park ,  Yoon-dong Park ,  Young-gu Jin ,  In-sung Joe

发明人： Kwang-soo Seol ,  Sung-Il Park ,  Yoon-dong Park ,  Young-gu Jin ,  In-sung Joe

IPC分类号： G11C16/06 ,  G11C16/04

CPC分类号： G11C16/3454 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3459 ,  G11C2211/5621

摘要： Provided are methods of operating NAND nonvolatile memory devices. The operating methods include applying a read voltage or a verify voltage to a selected memory cell from among a plurality of memory cells of a cell string to verify or read a programmed state of the selected memory cell; applying a first pass voltage to non-selected memory cells closest to the selected memory cell of the cell string; applying a second pass voltage to second closest non-selected memory cells to the selected memory cell; and applying a third pass voltage to other non-selected memory cells, where the first pass voltage is less than each of the second and third pass voltages and the second pass voltage is greater than the third pass voltage.

摘要翻译： 提供了操作NAND非易失性存储器件的方法。 操作方法包括从单元串的多个存储单元中向所选存储单元施加读取电压或验证电压以验证或读取所选存储单元的编程状态; 对最靠近所述单元串的选定存储单元的未选择存储单元施加第一通过电压; 将第二通过电压施加到所选择的存储器单元的第二最近的未选择的存储器单元; 以及向其他未选择的存储单元施加第三通过电压，其中第一通过电压小于第二和第三通过电压中的每一个，并且第二通过电压大于第三通过电压。

公开(公告)号：US20090052239A1

公开(公告)日：2009-02-26

申请号：US12076706

申请日：2008-03-21

申请人： In-sung Joe ,  Young-gu Jin ,  Jae-woong Hyun ,  Yoon-dong Park

发明人： In-sung Joe ,  Young-gu Jin ,  Jae-woong Hyun ,  Yoon-dong Park

IPC分类号： G11C16/28

CPC分类号： G11C16/3418

摘要： Methods of reading memory cell data and nonvolatile memory devices, which apply a low voltage to memory cells adjacent to a memory cell from which data may be read are provided. Methods of reading memory cell data of nonvolatile memory device include applying a first voltage to a control gate of a read memory cell from among the plurality of memory cells, applying a third voltage to control gates of memory cell adjacent to the read memory cell, and applying a second voltage to control gates of memory cells other than the read memory cell and the adjacent memory cells.

摘要翻译： 提供将存储单元数据和非易失性存储器件读取的方法，该存储单元数据和非易失性存储器件将低电压施加到与可读取数据的存储器单元相邻的存储器单元。 读取非易失性存储器件的存储单元数据的方法包括从多个存储器单元向读存储器单元的控制栅极施加第一电压，将第三电压施加到与读存储单元相邻的存储单元的控制栅极，以及 将第二电压施加到除了读存储器单元和相邻存储单元之外的存储单元的控制栅极。

公开(公告)号：US08193497B2

公开(公告)日：2012-06-05

申请号：US12656684

申请日：2010-02-12

申请人： Yoon-dong Park ,  David Andrew Barclay Miller ,  Young-gu Jin ,  In-sung Joe

发明人： Yoon-dong Park ,  David Andrew Barclay Miller ,  Young-gu Jin ,  In-sung Joe

IPC分类号： H01L27/148

CPC分类号： H01L31/1804 ,  H01L31/107 ,  Y02E10/547 ,  Y02P70/521

摘要： Silicon photodetectors using near-infrared dipole antennas. The photodetectors include a silicon region formed on a semiconductor substrate, dipole antenna forming two arms that are spaced apart with the silicon region therebetween and inducing an electromagnetic wave signal of incident light, and electrodes disposed in a vertical direction of the dipole antenna and spaced apart with the silicon region therebetween, where a critical bias voltage is applied to the electrodes to induce an avalanche gain operation in the silicon region.

摘要翻译： 使用近红外偶极天线的硅光电探测器。 光电探测器包括形成在半导体衬底上的硅区，形成两个臂的偶极天线，两个臂与它们之间的硅区间隔开，并引起入射光的电磁波信号，以及设置在偶极子天线的垂直方向上并间隔开的电极 其间的硅区域，其中向电极施加临界偏置电压以在硅区域中引起雪崩增益操作。

公开(公告)号：US20090244980A1

公开(公告)日：2009-10-01

申请号：US12382790

申请日：2009-03-24

申请人： Kwang-soo Seol ,  Young-gu Jin ,  Yoon-dong Park

发明人： Kwang-soo Seol ,  Young-gu Jin ,  Yoon-dong Park

IPC分类号： G11C16/06

CPC分类号： G11C16/10 ,  G11C16/3409 ,  G11C16/344 ,  G11C16/3454

摘要： Provided is a method and device for reducing lateral movement of charges. The method may include pre-programming at least one memory cell that is in an erased state by applying a pre-programming voltage to the at least one memory cell to have a narrower distribution of threshold voltages than the at least one erased state memory cell and verifying that the pre-programmed memory cell is in the pre-programmed state using a negative effective verifying voltage.

摘要翻译： 提供一种用于减少电荷的横向移动的方法和装置。 该方法可以包括通过对至少一个存储器单元施加预编程电压以使得具有比所述至少一个擦除状态存储器单元更窄的阈值电压分布来对处于擦除状态的至少一个存储器单元进行预编程，以及 使用负的有效验证电压来验证预编程存储器单元是否处于预编程状态。

公开(公告)号：US08130442B2

公开(公告)日：2012-03-06

申请号：US12230937

申请日：2008-09-08

申请人： Dae-kil Cha ,  Jung-hoon Shin ,  Yoon-dong Park ,  Young-gu Jin ,  Moon-seung Yang ,  In-sung Joe ,  Jee-soo Chang

发明人： Dae-kil Cha ,  Jung-hoon Shin ,  Yoon-dong Park ,  Young-gu Jin ,  Moon-seung Yang ,  In-sung Joe ,  Jee-soo Chang

IPC分类号： H01S3/00

CPC分类号： H01S3/0632 ,  H01S3/0637 ,  H01S3/0933 ,  H01S3/09403 ,  H01S3/1608 ,  H01S3/1691

摘要： An optical amplifying medium, a method of manufacturing the optical amplifying medium are provided, and an optical device comprising the optical amplifying medium. The optical amplifying medium includes a multi-layer structure in which a first material layer doped with an activator and a second material layer that comprises a sensitizer are stacked.

摘要翻译： 提供一种光放大介质，一种制造该光放大介质的方法，以及包括该光放大介质的光学装置。 光放大介质包括多层结构，其中堆叠掺杂有活化剂的第一材料层和包含敏化剂的第二材料层。

公开(公告)号：US20110198499A1

公开(公告)日：2011-08-18

申请号：US12656684

申请日：2010-02-12

申请人： Yoon-dong Park ,  David Andrew Barclay Miller ,  Young-gu Jin ,  In-sung Joe

发明人： Yoon-dong Park ,  David Andrew Barclay Miller ,  Young-gu Jin ,  In-sung Joe

IPC分类号： H01L27/148 ,  H01L31/107 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/107 ,  Y02E10/547 ,  Y02P70/521

摘要： Silicon photodetectors using near-infrared dipole antennas. The photodetectors include a silicon region formed on a semiconductor substrate, dipole antenna forming two arms that are spaced apart with the silicon region therebetween and inducing an electromagnetic wave signal of incident light, and electrodes disposed in a vertical direction of the dipole antenna and spaced apart with the silicon region therebetween, where a critical bias voltage is applied to the electrodes to induce an avalanche gain operation in the silicon region.

摘要翻译： 使用近红外偶极天线的硅光电探测器。 光电探测器包括形成在半导体衬底上的硅区，形成两个臂的偶极天线，两个臂与它们之间的硅区间隔开，并引起入射光的电磁波信号，以及设置在偶极子天线的垂直方向上并间隔开的电极 其间的硅区域，其中向电极施加临界偏置电压以在硅区域中引起雪崩增益操作。

公开(公告)号：US07995396B2

公开(公告)日：2011-08-09

申请号：US12458294

申请日：2009-07-08

申请人： Kwang-soo Seol ,  Sung-II Park ,  Yoon-dong Park ,  Young-gu Jin ,  In-sung Joe

发明人： Kwang-soo Seol ,  Sung-II Park ,  Yoon-dong Park ,  Young-gu Jin ,  In-sung Joe

IPC分类号： G11C11/34

CPC分类号： G11C16/3454 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3459 ,  G11C2211/5621

摘要： Provided are methods of operating NAND nonvolatile memory devices. The operating methods include applying a read voltage or a verify voltage to a selected memory cell from among a plurality of memory cells of a cell string to verify or read a programmed state of the selected memory cell; applying a first pass voltage to non-selected memory cells closest to the selected memory cell of the cell string; applying a second pass voltage to second closest non-selected memory cells to the selected memory cell; and applying a third pass voltage to other non-selected memory cells, where the first pass voltage is less than each of the second and third pass voltages and the second pass voltage is greater than the third pass voltage.

摘要翻译： 提供了操作NAND非易失性存储器件的方法。 操作方法包括从单元串的多个存储单元中向所选存储单元施加读取电压或验证电压以验证或读取所选存储单元的编程状态; 对最靠近所述单元串的选定存储单元的未选择存储单元施加第一通过电压; 将第二通过电压施加到所选择的存储器单元的第二最近的未选择的存储器单元; 以及向其他未选择的存储单元施加第三通过电压，其中第一通过电压小于第二和第三通过电压中的每一个，并且第二通过电压大于第三通过电压。