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公开(公告)号:US08525553B1
公开(公告)日:2013-09-03
申请号:US13459877
申请日:2012-04-30
申请人: Wei Yi , Jianhua Yang , Matthew D. Pickett , Minxian Max Zhang
发明人: Wei Yi , Jianhua Yang , Matthew D. Pickett , Minxian Max Zhang
IPC分类号: H03K19/02
CPC分类号: H03K3/313 , H01L27/0802 , H03K19/10
摘要: In one example, an oxide-based negative differential resistance comparator circuit includes a composite NDR device that includes a first electrode, a first thin film oxide-based negative differential resistance (NDR) layer in contact with the first electrode and a central conductive portion. The composite NDR device also includes a second thin film oxide-based NDR layer disposed adjacent to the first NDR layer and a second electrode. A resistor may be placed in series with the composite NDR device and an electrical energy source can apply applying a voltage across the first electrode and second electrode. The composite NDR device produces a threshold based comparator functionality in the comparator circuit.
摘要翻译: 在一个示例中,基于氧化物的负差分电阻比较器电路包括复合NDR器件,其包括第一电极,与第一电极接触的第一基于薄膜氧化物的负差分电阻(NDR)层和中心导电部分。 复合NDR器件还包括邻近第一NDR层设置的第二薄膜氧化物基NDR层和第二电极。 电阻器可以与复合NDR器件串联放置,并且电能源可施加跨越第一电极和第二电极的电压。 复合NDR器件在比较器电路中产生基于阈值的比较器功能。
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公开(公告)号:US08519372B2
公开(公告)日:2013-08-27
申请号:US13259173
申请日:2009-07-30
IPC分类号: H01L29/02
CPC分类号: H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要: A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译: 构造纳米级开关器件,使得不需要电铸工艺来调节器件以进行正常的开关操作。 开关装置具有设置在两个电极之间的有源区域。 有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层,以及由掺杂剂源材料形成的至少一个导电层,所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。 开关层的厚度为6nm以下。
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公开(公告)号:US08455852B2
公开(公告)日:2013-06-04
申请号:US13142583
申请日:2009-01-26
IPC分类号: H01L29/02
CPC分类号: H01L27/1021 , B82Y10/00 , H01L21/26506 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149 , H01L45/165
摘要: Various embodiments of the present invention are direct to nanoscale, reconfigurable memristor devices. In one aspect, a memristor device (500,600) comprises an active region (508,610) sandwiched between a first electrode (301) and a second electrode (302). The active region including a non-volatile dopant region (506,608) selectively formed and positioned within the active region.
摘要翻译: 本发明的各种实施例直接用于纳米尺度的可重新配置的忆阻器装置。 一方面,忆阻器装置(500,600)包括夹在第一电极(301)和第二电极(302)之间的有源区(508,610)。 有源区包括选择性地形成并定位在有源区内的非易失性掺杂区(506,608)。
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公开(公告)号:US20130044525A1
公开(公告)日:2013-02-21
申请号:US13212428
申请日:2011-08-18
IPC分类号: H02M7/04
CPC分类号: H02M7/06
摘要: An asymmetric switching rectifier includes a first switching device to allow electric current to flow while in a first state and inhibit electric current in a second state and a second switching device connected in a head-to-head formation to said first switching device, said second switching to allow electric current to flow while in a first state and inhibit electric current in a second state. A first electric current to turn said switching devices to said first state is different than a second electric current to turn said switching devices to said second state. The rectifier further includes a bypass segment to draw a bypass electric current from a center electrode between said first switching device and said second switching device.
摘要翻译: 非对称开关整流器包括第一开关装置,以在第一状态下允许电流流动并且阻止处于第二状态的电流和以头对头形式连接到所述第一开关装置的第二开关装置,所述第二开关装置 切换以允许电流在第一状态下流动并且在第二状态下抑制电流。 将所述开关器件转换到所述第一状态的第一电流不同于将所述开关器件转换到所述第二状态的第二电流。 整流器还包括旁路段,以从所述第一开关器件和所述第二开关器件之间的中心电极抽取旁路电流。
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公开(公告)号:USD673384S1
公开(公告)日:2013-01-01
申请号:US29401115
申请日:2011-09-07
申请人: Jianhua Yang
设计人: Jianhua Yang
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公开(公告)号:US08331131B2
公开(公告)日:2012-12-11
申请号:US13018040
申请日:2011-01-31
CPC分类号: G11C13/0007 , G11C11/5685 , G11C13/0069 , G11C2013/0073 , G11C2013/0092 , G11C2213/54 , G11C2213/55
摘要: A method of changing a state of a memristor having a first intermediate layer, a second intermediate layer, and a third intermediate layer positioned between a first electrode and a second electrode includes applying a first pulse having a first bias voltage across the memristor, wherein the first pulse causes mobile species to flow in a first direction within the memristor and collect in the first intermediate layer thereby causing the memristor to enter into an intermediate state and applying a second pulse having a second bias voltage across the memristor, in which the second pulse causes the mobile species from the first intermediate layer to flow in a second direction within the memristor and collect in the third intermediate layer, wherein the flow of the mobile species in the second direction causes the memristor to enter into a fully changed state.
摘要翻译: 一种改变具有位于第一电极和第二电极之间的第一中间层,第二中间层和第三中间层的忆阻器的状态的方法包括:将具有第一偏置电压的第一脉冲施加在该忆阻器两端,其中, 第一脉冲导致移动物质在忆阻器内沿第一方向流动并收集在第一中间层中,从而使忆阻器进入中间状态,并施加具有第二偏置电压的第二脉冲跨过忆阻器,其中第二脉冲 使得来自第一中间层的移动物质在忆阻器内沿第二方向流动并收集在第三中间层中,其中移动物种在第二方向上的流动使得忆阻器进入完全改变的状态。
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公开(公告)号:US20120228575A1
公开(公告)日:2012-09-13
申请号:US13041617
申请日:2011-03-07
申请人: Wei Yi , Jianhua Yang , Gilberto Medeiros Ribeiro
发明人: Wei Yi , Jianhua Yang , Gilberto Medeiros Ribeiro
CPC分类号: H01L29/88 , B82Y10/00 , G11C13/0007 , G11C13/004 , G11C2213/12 , G11C2213/15 , G11C2213/32 , G11C2213/54 , G11C2213/73 , G11C2213/81 , H01L27/1021 , H01L29/0673 , H01L29/0676 , H01L29/413 , H01L29/872
摘要: On example of the present invention is a nanoscale electronic device comprising a first conductive electrode, a second conductive electrode, and a device layer. The device layer comprises a first dielectric material, between the first and second conductive electrodes, that includes an effective device layer, a first barrier layer near a first interface between the first conductive electrode and the device layer, and a second barrier layer near a second interface between the second conductive electrode and the device layer. A second example of the present invention is an integrated circuit that incorporates nanoscale electronic devices of the first example.
摘要翻译: 本发明的一个例子是包括第一导电电极,第二导电电极和器件层的纳米级电子器件。 器件层包括在第一和第二导电电极之间的第一介电材料,其包括有效器件层,在第一导电电极和器件层之间的第一界面附近的第一势垒层和靠近第二导电电极的第二阻挡层 第二导电电极和器件层之间的界面。 本发明的第二个例子是包含第一个例子的纳米级电子器件的集成电路。
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公开(公告)号:US20120164745A1
公开(公告)日:2012-06-28
申请号:US12978989
申请日:2010-12-27
申请人: Kai-Mei Camilla Fu , Jianhua Yang , Fung Suong Ou
发明人: Kai-Mei Camilla Fu , Jianhua Yang , Fung Suong Ou
CPC分类号: H01F1/0063 , B82Y15/00 , G01N21/658
摘要: A nanofinger device with magnetizable portion. The nanofinger device includes a substrate, and a plurality of nanofingers coupled with the substrate. A nanofinger of the plurality includes a flexible column, and at least one magnetizable portion. At least the nanofinger and a second nanofinger of the plurality of nanofingers are to arrange into a close-packed configuration. The magnetizable portion is to actuate the nanofinger in opening from the close-packed configuration in response to a physical stimulus affecting the magnetic state of the magnetizable portion. A chemical-analysis apparatus including the nanofinger device for chemical sensing and a method of using the nanofinger device for chemical sensing are also provided.
摘要翻译: 具有可磁化部分的纳米针装置。 纳米针装置包括衬底和与衬底耦合的多个纳米装置。 多个纳米针片包括柔性柱和至少一个可磁化部分。 至少纳米针和多个纳米针的第二纳米针将排列成紧密构型。 可磁化部分是响应于影响可磁化部分的磁状态的物理刺激,致动纳入框,以从紧密堆积构型打开。 还提供了一种化学分析装置,其包括用于化学感测的纳米针装置以及使用纳芬酮装置进行化学感测的方法。
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公开(公告)号:US20120132880A1
公开(公告)日:2012-05-31
申请号:US13322291
申请日:2009-07-28
IPC分类号: H01L45/00
CPC分类号: H01L45/1273 , G11C13/0007 , G11C16/02 , G11C2213/19 , G11C2213/52 , H01L27/2463 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/147 , H01L45/148
摘要: Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device (100) comprises an active region (102), a first electrode (104) disposed on a first surface of the active region, and a second electrode (106) disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a larger width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region (108) within the active region between the first electrode and the second electrode.
摘要翻译: 本发明的实施例涉及提供非易失性忆阻转换的纳米级忆阻器装置。 在一个实施例中,忆阻器装置(100)包括有源区(102),设置在有源区的第一表面上的第一电极(104)和设置在有源区的第二表面上的第二电极 ,与第一表面相对的第二表面。 第一电极被构造成在第一方向上具有比有效区域更大的宽度,并且第二电极被配置为在第二方向上具有比有效区域更大的宽度。 向至少一个电极施加电压产生穿过第一电极和第二电极之间的有源区域内的子区域(108)的电场。
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公开(公告)号:US20120104342A1
公开(公告)日:2012-05-03
申请号:US13382281
申请日:2009-07-13
IPC分类号: H01L45/00
CPC分类号: H01L45/145 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/142 , H01L45/146 , H01L45/1616
摘要: A memristive device includes a first electrode, a second electrode crossing the first electrode at a non-zero angle, and an active region disposed between the first and second electrodes. The active region has a controlled defect profile throughout its thickness.
摘要翻译: 忆阻器件包括第一电极,非零角度与第一电极交叉的第二电极以及设置在第一和第二电极之间的有源区。 活性区域在整个厚度上具有受控的缺陷分布。
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