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    STORAGE APPARATUS
    72.
    发明申请
    STORAGE APPARATUS 有权
    存储设备

    公开(公告)号：US20120002466A1

    公开(公告)日：2012-01-05

    申请号：US13155099

    申请日：2011-06-07

    申请人： Yutaka Higo ,  Hiroyuki Uchida ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Masanori Hosomi ,  Kazutaka Yamane

    发明人： Yutaka Higo ,  Hiroyuki Uchida ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Masanori Hosomi ,  Kazutaka Yamane

    IPC分类号： G11C11/14

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

    摘要： Disclosed herein is a storage apparatus including a cell array configured to include storage devices arranged to form an array. Each of the storage device has: a storage layer for storing information as the state of magnetization of a magnetic substance; a fixed-magnetization layer having a fixed magnetization direction; and a tunnel insulation layer sandwiched between the storage layer and the fixed-magnetization layer. In an operation to write information on the storage layer, a write current is generated to flow in the layer-stacking direction of the storage layer and the fixed-magnetization layer in order to change the direction of the magnetization of the storage layer. The cell array is divided into a plurality of cell blocks. The thermal stability of the storage layer of any particular one of the storage devices has a value peculiar to the cell block including the particular storage device.

    摘要翻译： 这里公开了一种存储装置，其包括被配置为包括布置成形成阵列的存储装置的单元阵列。 每个存储装置具有：用于存储作为磁性物质的磁化状态的信息的存储层; 具有固定磁化方向的固定磁化层; 以及夹在所述存储层和所述固定磁化层之间的隧道绝缘层。 在存储层上写入信息的操作中，产生写入电流以在存储层和固定磁化层的层叠方向上流动，以改变存储层的磁化方向。 单元阵列被分成多个单元块。 任何特定存储设备的存储层的热稳定性具有包括特定存储设备的单元块特有的值。

    MAGNETIC RANDOM ACCESS MEMORY AND INITIALIZING METHOD
    73.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY AND INITIALIZING METHOD 有权
    磁性随机存取存储器和初始化方法

    公开(公告)号：US20110286264A1

    公开(公告)日：2011-11-24

    申请号：US13112700

    申请日：2011-05-20

    申请人： Yosuke KOBAYASHI

    发明人： Yosuke KOBAYASHI

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetic random access memory which includes a magnetic record layer which is ferromagnetic; a ferromagnetic magnetization fixed layer whose magnetization is fixed; and a non-magnetic spacer layer provided between the magnetic record layer and the magnetization fixed layer. The magnetic record layer includes a magnetization invertible region whose magnetization is invertible and which is connected to the magnetization fixed layer through the spacer layer; a first magnetization region which has a magnetization in a first direction and which is provided in parallel to the magnetization invertible region; a second magnetization region which has a magnetization in a second direction and which is provided in parallel to the magnetization invertible region; a first inclined region connected to the magnetization invertible region and the first magnetization region at a predetermined inclination angle; and a second inclined region connected to the magnetization invertible region and the second magnetization region at the inclination angle.

    摘要翻译： 磁性随机存取存储器，其包括磁性记录层; 其磁化固定的铁磁性磁化固定层; 以及设置在磁记录层和磁化固定层之间的非磁性间隔层。 磁记录层包括磁化可逆区域，其磁化是可逆的，并且通过间隔层连接到磁化固定层; 第一磁化区域，其在第一方向上具有磁化，并且与磁化可逆区域平行设置; 第二磁化区域，其在第二方向上具有磁化并且与磁化可逆区域平行设置; 连接到所述磁化可逆区域和所述第一磁化区域以预定倾斜角度的第一倾斜区域; 以及以倾斜角连接到所述磁化可逆区域和所述第二磁化区域的第二倾斜区域。

    Write Energy Conservation In Memory
    74.
    发明申请
    Write Energy Conservation In Memory 有权
    写节能记忆

    公开(公告)号：US20110280065A1

    公开(公告)日：2011-11-17

    申请号：US12777468

    申请日：2010-05-11

    申请人： Hari M. Rao ,  Jung Pill Kim ,  Taehyun Kim ,  Xiaochun Zhu ,  Kangho Lee ,  Wuyang Hao

    发明人： Hari M. Rao ,  Jung Pill Kim ,  Taehyun Kim ,  Xiaochun Zhu ,  Kangho Lee ,  Wuyang Hao

    IPC分类号： G11C11/14 ,  G11C11/416

    CPC分类号： G11C11/1675 ,  G11C11/1693

    摘要： A method writes data to a resistive memory, such as spin torque transfer magnetic random access memory (STT-MRAM). The method writes received bits of data to a memory cell array, in response to a first write signal. The method also reads stored data from the memory cell array, after the first write signal is generated, and then compares the stored data with the received bits of data to determine whether each of the received bits of data was written to the memory. In response to a second write signal, received bits of data determined not to have been written during the first write signal, are written.

    摘要翻译： 一种方法将数据写入电阻性存储器，如自旋扭矩传递磁随机存取存储器（STT-MRAM）。 该方法响应于第一写入信号将接收到的数据位写入存储单元阵列。 该方法还在生成第一写信号之后从存储单元阵列中读取存储的数据，然后将所存储的数据与接收的数据位进行比较，以确定每个接收的数据位是否被写入存储器。 响应于第二写入信号，写入在第一写入信号期间被确定为不被写入的数据的接收位。

    Reference Cell Write Operations At A Memory
    75.
    发明申请
    Reference Cell Write Operations At A Memory 有权
    内存中的参考单元写入操作

    公开(公告)号：US20110235391A1

    公开(公告)日：2011-09-29

    申请号：US12731204

    申请日：2010-03-25

    申请人： Jung Pill Kim ,  Hari M. Rao ,  Xia Li

    发明人： Jung Pill Kim ,  Hari M. Rao ,  Xia Li

    IPC分类号： G11C11/00 ,  G11C11/416 ,  G11C11/14

    CPC分类号： G11C13/004 ,  G11C8/10 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C13/0023 ,  G11C13/0026 ,  G11C2013/0054

    摘要： A method of selecting a reference circuit for a write operation is disclosed. The method comprises selecting a reference circuit for a write operation based on an output of a row decode circuit and a column decode circuit. The reference circuit is programmed concurrently with a write operation of at least one of a plurality of memory cells in a memory array without requiring an external reference circuit write command.

    摘要翻译： 公开了一种选择用于写入操作的参考电路的方法。 该方法包括基于行解码电路和列解码电路的输出来选择用于写入操作的参考电路。 参考电路与存储器阵列中的多个存储单元中的至少一个的写入操作同时编程，而不需要外部参考电路写入命令。

    SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS MODULATED WITH A NON-LINEAR SHUNT RESISTOR
    76.
    发明申请
    SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS MODULATED WITH A NON-LINEAR SHUNT RESISTOR 有权
    具有读取和写入电流调制的非线性分流电阻的基于转子的基于记忆体的存储器件

    公开(公告)号：US20110194341A1

    公开(公告)日：2011-08-11

    申请号：US12701867

    申请日：2010-02-08

    申请人： Michael C. Gaidis ,  Janusz J. Nowak ,  Jonathan Z. Sun

    发明人： Michael C. Gaidis ,  Janusz J. Nowak ,  Jonathan Z. Sun

    IPC分类号： G11C11/14 ,  H01L21/00 ,  H01L29/12 ,  H01L29/82

    CPC分类号： H01L27/224 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  H01L27/24 ,  H01L43/08 ,  H01L45/04 ,  H01L45/145

    摘要： A spin-torque based memory device includes a write portion including a fixed ferromagnetic spin-polarizing layer, a spin-transport layer having a spin accumulation region formed above the fixed ferromagnetic spin-polarizing layer. The memory device further includes a read portion in electrical contact with the spin-transport layer. The read portion includes a free layer magnet, a read non-magnetic layer, and a reference layer. The memory device further includes a metal contact region formed overlying the read portion and a nonlinear resistor formed between an upper surface of the spin transport layer and the metal contact region and modulating write and read current paths depending on an applied voltage, thereby creating different current paths for write and read processes.

    摘要翻译： 基于自旋扭矩的存储器件包括：写入部分，其包括固定铁磁自旋极化层，具有形成在固定铁磁自旋偏振层上方的自旋存储区域的自旋传输层。 存储器件还包括与自旋传输层电接触的读取部分。 读取部分包括自由层磁体，读取非磁性层和参考层。 存储器件还包括覆盖读取部分的金属接触区域和形成在自旋传输层的上表面与金属接触区域之间的非线性电阻，并且根据所施加的电压调制写入和读取电流路径，从而产生不同的电流 写入和读取过程的路径。

    READ DIRECTION FOR SPIN-TORQUE BASED MEMORY DEVICE
    77.
    发明申请
    READ DIRECTION FOR SPIN-TORQUE BASED MEMORY DEVICE 有权
    基于旋转扭矩的记忆装置的读取方向

    公开(公告)号：US20110170340A1

    公开(公告)日：2011-07-14

    申请号：US12684510

    申请日：2010-01-08

    申请人： Daniel C. Worledge

    发明人： Daniel C. Worledge

    IPC分类号： G11C11/14 ,  G11C7/00

    CPC分类号： G11C11/1673 ,  G11C11/1659 ,  G11C11/1675

    摘要： A spin-torque based memory device includes a plurality of magnetic storage cells in an array, each magnetic storage cell includes at least one magnetic tunnel junction (MTJ) element, and at least one bit line and at least one bit complement line corresponding to the plurality of magnetic storage cells. Each respective MTJ element is written by driving a write current in a first or second direction to program the respective MTJ element in a low resistance state or a high resistance state and each respective MTJ element is read by driving a read current through the respective MTJ element in a direction that tends to disturb the respective MTJ element into the high resistance state.

    摘要翻译： 基于自旋扭矩的存储器件包括阵列中的多个磁存储单元，每个磁存储单元包括至少一个磁隧道结（MTJ）元件，以及至少一个位线和至少一个位补码线 多个磁存储单元。 通过以第一或第二方向驱动写入电流来写入每个相应的MTJ元件，以便以低电阻状态或高电阻状态对相应的MTJ元件进行编程，并且通过驱动通过相应MTJ元件的读取电流读取每个相应的MTJ元件 在倾向于将各个MTJ元件干扰到高电阻状态的方向上。

    Write current compensation using word line boosting circuitry
    79.
    发明授权
    Write current compensation using word line boosting circuitry 有权
    使用字线升压电路写入电流补偿

    公开(公告)号：US07974121B2

    公开(公告)日：2011-07-05

    申请号：US12967743

    申请日：2010-12-14

    申请人： Hai Li ,  Yiran Chen ,  Harry Hongyue Liu ,  Henry Huang ,  Ran Wang

    发明人： Hai Li ,  Yiran Chen ,  Harry Hongyue Liu ,  Henry Huang ,  Ran Wang

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C5/14 ,  G11C8/00

    CPC分类号： G11C8/08 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0028 ,  G11C13/0069 ,  G11C2013/0071

    摘要： Apparatus and method for write current compensation in a non-volatile memory cell, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM). In accordance with some embodiments, a non-volatile memory cell has a resistive sense element (RSE) coupled to a switching device, the RSE having a hard programming direction and an easy programming direction opposite the hard programming direction. A voltage boosting circuit includes a capacitor which adds charge to a nominal non-zero voltage supplied by a voltage source to a node to generate a temporarily boosted voltage. The boosted voltage is applied to the switching device when the RSE is programmed in the hard programming direction.

    摘要翻译： 非易失性存储单元中的写入电流补偿的装置和方法，例如但不限于自旋转矩传递随机存取存储器（STRAM）或电阻随机存取存储器（RRAM）。 根据一些实施例，非易失性存储器单元具有耦合到开关器件的电阻感测元件（RSE），RSE具有硬编程方向和与硬编程方向相反的简单编程方向。 升压电路包括电容器，该电容器将电压加到由电压源向节点提供的标称非零电压以产生暂时提升的电压。 当RSE在硬编程方向编程时，升压电压施加到开关器件。