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    STT MRAM magnetic tunnel junction architecture and integration
    5.
    发明授权
    STT MRAM magnetic tunnel junction architecture and integration 有权
    STT MRAM磁隧道结结构和集成

    公开(公告)号：US08564079B2

    公开(公告)日：2013-10-22

    申请号：US12355941

    申请日：2009-01-19

    申请人： Seung H. Kang ,  Xia Li ,  Shiqun Gu ,  Kangho Lee ,  Xiaochun Zhu

    发明人： Seung H. Kang ,  Xia Li ,  Shiqun Gu ,  Kangho Lee ,  Xiaochun Zhu

    IPC分类号： H01L21/00 ,  H01L29/82

    CPC分类号： H01L27/222 ,  H01L43/08 ,  H01L43/12

    摘要： A magnetic tunnel junction (MTJ) device for a magnetic random access memory (MRAM) in a semiconductor back-end-of-line (BEOL) process flow includes a first metal interconnect for communicating with at least one control device and a first electrode for coupling to the first metal interconnect through a via formed in a dielectric passivation barrier using a first mask. The device also includes an MTJ stack for storing data coupled to the first electrode, a portion of the MTJ stack having lateral dimensions based upon a second mask. The portion defined by the second mask is over the contact via. A second electrode is coupled to the MTJ stack and also has a same lateral dimension as defined by the second mask. The first electrode and a portion of the MTJ stack are defined by a third mask. A second metal interconnect is coupled to the second electrode and at least one other control device.

    摘要翻译： 半导体后端工艺流程中用于磁性随机存取存储器（MRAM）的磁隧道结（MTJ）装置包括用于与至少一个控制装置通信的第一金属互连和用于与至少一个控制装置通信的第一电极 通过使用第一掩模在介电钝化屏障中形成的通孔耦合到第一金属互连。 该装置还包括用于存储耦合到第一电极的数据的MTJ堆叠，MTJ堆叠的一部分具有基于第二掩模的侧向尺寸。 由第二掩模限定的部分在接触通孔之上。 第二电极耦合到MTJ堆叠并且还具有与第二掩模所限定的相同的横向尺寸。 第一电极和MTJ堆叠的一部分由第三掩模限定。 第二金属互连件耦合到第二电极和至少一个其他控制装置。

    Magnetic tunnel junction device
    6.
    发明授权
    Magnetic tunnel junction device 有权
    磁隧道连接装置

    公开(公告)号：US08558331B2

    公开(公告)日：2013-10-15

    申请号：US12633264

    申请日：2009-12-08

    申请人： Xiaochun Zhu ,  Seung H. Kang ,  Xia Li ,  Kangho Lee

    发明人： Xiaochun Zhu ,  Seung H. Kang ,  Xia Li ,  Kangho Lee

    IPC分类号： H01L29/82

    CPC分类号： H01L43/02 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： A system and method of manufacturing and using a magnetic tunnel junction device is disclosed. In a particular embodiment, a magnetic tunnel junction device includes a first free layer and second free layer. The magnetic tunnel junction also includes a spin torque enhancement layer. The magnetic tunnel junction device further includes a spacer layer between the first and second free layers that includes a material and has a thickness that substantially inhibits exchange coupling between the first and second free layers. The first and second free layers are magneto-statically coupled.

    摘要翻译： 公开了制造和使用磁性隧道结装置的系统和方法。 在特定实施例中，磁性隧道结装置包括第一自由层和第二自由层。 磁隧道结还包括自旋转矩增强层。 磁性隧道结装置还包括位于第一和第二自由层之间的间隔层，其包括材料并且具有基本上抑制第一和第二自由层之间的交换耦合的厚度。 第一和第二自由层是磁静态耦合的。

    THREE PORT MTJ STRUCTURE AND INTEGRATION
    7.
    发明申请
    THREE PORT MTJ STRUCTURE AND INTEGRATION 有权
    三港MTJ结构与整合

    公开(公告)号：US20130114336A1

    公开(公告)日：2013-05-09

    申请号：US13356720

    申请日：2012-01-24

    申请人： Xia Li ,  Xiaochun Zhu ,  Seung H. Kang ,  Jung Pill Kim ,  Wah Nam Hsu ,  Taehyun Kim ,  Kangho Lee

    发明人： Xia Li ,  Xiaochun Zhu ,  Seung H. Kang ,  Jung Pill Kim ,  Wah Nam Hsu ,  Taehyun Kim ,  Kangho Lee

    IPC分类号： G11C11/14 ,  H01L21/8246 ,  H01L29/82

    CPC分类号： G11C11/161 ,  G11C8/16 ,  G11C11/16 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08

    摘要： A two-transistor one-MTJ (2T1MTJ) three port structure includes two separate pin layer structures coupled to one free layer structure. The pin layer structures may include an anti-ferromagnetic layer (AFM) layer coupled to a pin layer. The free layer structure includes free layer coupled to a barrier layer and a cap layer. The free layer structure may include a thin barrier layer coupled to each of the pin layer stacks. The three port MTJ structure provides separate write and read paths which improve read sensing margin without increasing write voltage or current. The three port MTJ structure may be fabricated with a simple two step MTJ etch process.

    摘要翻译： 双晶体管单MTJ（2T1MTJ）三端口结构包括耦合到一个自由层结构的两个独立的引脚层结构。 引脚层结构可以包括耦合到引脚层的反铁磁层（AFM）层。 自由层结构包括耦合到阻挡层和盖层的自由层。 自由层结构可以包括耦合到每个引脚层堆叠的薄势垒层。 三端口MTJ结构提供单独的写入和读取路径，从而提高读取感测余量，而不增加写入电压或电流。 三端口MTJ结构可以用简单的两步MTJ蚀刻工艺制造。

    Magnetoresistive random access memory (MRAM) with integrated magnetic film enhanced circuit elements
    8.
    发明授权
    Magnetoresistive random access memory (MRAM) with integrated magnetic film enhanced circuit elements 有权
    具有集成磁膜增强电路元件的磁阻随机存取存储器（MRAM）

    公开(公告)号：US08248840B2

    公开(公告)日：2012-08-21

    申请号：US12732531

    申请日：2010-03-26

    申请人： Xia Li ,  Seung H. Kang ,  Xiaochun Zhu ,  Kangho Lee

    发明人： Xia Li ,  Seung H. Kang ,  Xiaochun Zhu ,  Kangho Lee

    IPC分类号： G11C11/00

    CPC分类号： G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/02 ,  H01L43/12

    摘要： A Magnetoresistive Random Access Memory (MRAM) integrated circuit includes a substrate, a magnetic tunnel junction region, a magnetic circuit element, and an integrated magnetic material. The magnetic tunnel junction region is disposed on the substrate, and includes a first magnetic layer and a second magnetic layer separated by a tunnel barrier insulating layer. The magnetic circuit element region is disposed on the substrate, and includes a plurality of interconnected metal portions. The integrated magnetic material is disposed on the substrate adjacent to the plurality of interconnected metal portions.

    摘要翻译： 磁阻随机存取存储器（MRAM）集成电路包括衬底，磁性隧道结区域，磁路元件和集成磁性材料。 磁性隧道结区域设置在基板上，并且包括由隧道势垒绝缘层分隔开的第一磁性层和第二磁性层。 磁路元件区域设置在基板上，并且包括多个相互连接的金属部分。 集成磁性材料设置在与多个相互连接的金属部分相邻的基板上。