Abstract:
A method for forming a micro-electro-mechanical systems (MEMS) package includes following steps. A plurality of MEMS units are formed on a substrate, and each of the MEMS units includes at least a MEMS sensing element and a first chamber over the MEMS sensing element. The MEMS units include electric connection pads. A plurality of covering units are formed correspondingly over the MEMS units. Each of the covering units provides a second chamber over the MEMS sensing element opposite to the first chamber. The covering units are adhered to the MEMS units by an adhesive material. The MEMS units are diced into singulated units.
Abstract:
A micro-electro-mechanical system (MEMS) device includes a substrate, having a first side and second side, the second side has a cavity and a plurality of venting holes in the substrate at the second side with connection to the cavity. However, the cavity is included in option without absolute need. A structural dielectric layer has a dielectric structure and a conductive structure in the dielectric structure. The structural dielectric layer has a chamber in connection to the cavity by the venting holes. A suspension structure layer is formed above the chamber. An end portion is formed in the structural dielectric layer in fix position. A diaphragm has a first portion of the diaphragm fixed on the suspension structure layer while a second portion of the diaphragm is free without being fixed.
Abstract:
A method for managing a writing operation for a multi-level cell (MLC) nonvolatile memory by a host is provided. The MLC nonvolatile memory has a plurality of MLC blocks, each MLC cell of each MLC block can store multiple logical data bits. The method includes forming a turbo writing unit from the spare block pool; writing a data sent by the host to the turbo writing unit; and changing the role of the turbo writing unit into a turbo data unit. The turbo writing unit is formed with at least one of the MLC blocks, each MLC cell of the at least one of the MLC blocks stores a portion of the logical data bits the MLC cell is capable of storing.
Abstract:
A microelectromechanical system (MEMS) device includes a diaphragm capacitor, connected between a capacitor biasing voltage source and a ground. A source follower circuit is coupled to the diaphragm capacitor. An amplifier is coupled to the source follower circuit to amplify the voltage signal as an output voltage signal. A programmable trimming circuit is implemented with the amplifier to trim a gain or implemented with the capacitor biasing voltage source to trim voltage applied on the diaphragm capacitor. Whereby, the output voltage signal has a target sensitivity.
Abstract:
An USB audio controller includes an USB interface unit, an audio interface unit, a storage interface unit, and a processing unit. The USB interface unit is used to connect to an USB bus for communicating with a host by a communication information. The audio interface unit is used to connect to at least one audio device for communicating with an audio signal. The storage interface unit is used to connect to a memory unit for communicating storage information. The processing unit is for processing the communicating information, storage information, or audio signal.
Abstract:
A micro-electro-mechanical systems (MEMS) device includes a back-plate substrate, having an intended region formed with a plurality of perforating holes. A first structural dielectric layer, disposed on the back-plate substrate, wherein the dielectric layer having an opening above the intended region. An etching stop layer, disposed over the first structural dielectric layer. A second structural dielectric layer, formed over the back-plate substrate. The etching stop layer and the second structural dielectric layer form at least a part of a micro-machine diaphragm, and cover over the opening of the first structural dielectric layer to form a chamber between the micro-machine diaphragm and the back-plate substrate.
Abstract:
An audio playback apparatus is based on a pre-defined data communication protocol, and communicating with an external host. The audio playback apparatus includes an audio playback engine, having a plurality of I/O pins based on the pre-defined data communication protocol for communicating with the external host. The pre-defined data communication protocol allows to transmit a communication information between the audio playback engine and the external host. In addition, an audio control command and an audio data stream defined in a pre-defined protocol are treated as the communication information between the audio playback engine and the external host.
Abstract:
A memory system includes a memory cell array, a bit line switch, first and second page buffers, a column switch, an error correction circuit, and control circuits. The second page buffer can swap data with the first page buffer. The control circuits controls the bit line switch and the first and second page buffers, sequentially reads, page by page, one or more pages from the mth (m is a positive integer) page to the nth (n is an integer greater than m) page of the first block in the memory cell array, controls the error correction circuit to perform error correction calculation by the error correction circuit, controls the first and second data buffers and the bit line switch, and controls to perform write in the second block in the erase state in the memory cell array.
Abstract:
A measure system for signal measurement is introduced. The measure system simplifies the effort for a signal measurement in many applications. The application for a signal measurement is, for example, computation of a signal average value. The measure system includes a digital computation circuit together with an analog to digital converter (ADC) to constitute a compact signal measurement component. With the proposed design, a general microcontroller can proceed with a signal level sense and control with very few CPU power. In addition, the proposed system can be integrated with other analog or digital signal processing circuitry to form a single silicon chip.
Abstract:
A structure of non-volatile memory has a plurality of buried bit lines in a substrate, extending along a first direction. Selection gate structure lines are located between the buried bit lines. A plurality of stack dielectric films on the both sides of the selection gate structure lines serving as a charge storage region, does not extend to the bit lines and a dielectric layer contacting a surface of substrate adjacent to stacked dielectric films. Word lines are over the substrate, wherein stacked dielectric films and a dielectric layer are interposed between WL and substrate on the region excluding the selection gate structure line, extending along a second direction different from the first direction. Since the charge storage layer does not completely cover between the selection gate structure lines and the bit lines, an additional control gate is formed.