公开(公告)号：US20090027743A1

公开(公告)日：2009-01-29

申请号：US11972165

申请日：2008-01-10

Applicant: Dong Hun Han

Inventor： Dong Hun Han

IPC: H04N1/04 ,  H04N1/00

CPC classification number: H04N1/203 ,  H04N1/12 ,  H04N1/193 ,  H04N1/2032 ,  H04N2201/0081 ,  H04N2201/0458

Abstract: An image reading device and an image forming apparatus having the same that can increase a scan quality by improving mounting positions of units to read information recorded on a document and a mounting structure of a light shielding member. The image reading device may include a first reading unit to read image information recorded on a first surface of a document, a second reading unit disposed at a predetermined distance from the first reading unit along a document feeding direction to read image information recorded on a second surface of the document, and at least one light shielding member mounted between the first reading unit and the second reading unit along the document feeding direction. The light shielding member may extend in a direction different from the document feeding direction such that one end portion is located in a document feeding path. The light shielding member may be provided with a document guide portion to guide the document.

Abstract translation: 一种图像读取装置和具有该图像读取装置和图像形成装置的图像形成装置，其可以通过改善装置的安装位置来提高扫描质量，从而读取记录在文件上的信息和遮光构件的安装结构。 图像读取装置可以包括：第一读取单元，用于读取记录在文档的第一表面上的图像信息;第二读取单元，沿着原稿输送方向设置在距离第一读取单元预定距离处，以读取记录在第二个 文件的表面以及沿文件输入方向安装在第一读取单元和第二读取单元之间的至少一个遮光构件。 遮光构件可以在与原稿输送方向不同的方向上延伸，使得一个端部位于文件馈送路径中。 遮光构件可以设置有引导文件的文件引导部。

公开(公告)号：US20080259899A1

公开(公告)日：2008-10-23

申请号：US12148964

申请日：2008-04-23

Applicant: Sunghyun Choi ,  Kwang-Hun Han ,  Young-Kyu Choi ,  Yong-Hwan Lee

Inventor： Sunghyun Choi ,  Kwang-Hun Han ,  Young-Kyu Choi ,  Yong-Hwan Lee

IPC: H04J3/00

CPC classification number: H04W72/1268 ,  H04W52/146 ,  H04W52/228

Abstract: An UpLink (UL) scheduling method and apparatus considering a characteristic of a power amplifier in a mobile communication terminal are provided. The UL scheduling method includes calculating a packet transmission time, which minimizes energy consumed in packet transmission, by using a Direct Current (DC) voltage used in a power amplifier for signal amplification and by using nonlinear amplification efficiency; and scheduling UL data by using the calculated packet transmission time.

Abstract translation: 提供了考虑移动通信终端中的功率放大器的特性的UpLink（UL）调度方法和装置。 UL调度方法包括通过使用用于信号放大的功率放大器中使用的直流（DC）电压和通过使用非线性放大效率来计算分组传输中消耗的能量最小化的分组传输时间; 并通过使用所计算的分组传输时间调度UL数据。

公开(公告)号：US20080203451A1

公开(公告)日：2008-08-28

申请号：US12007900

申请日：2008-01-16

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14687

Abstract: A CMOS image sensor and a method for fabricating the same are provided, in which an N type region of a photodiode is prevented from adjoining a device isolation film and a dark current is reduced. The CMOS image sensor includes an interlayer dielectric film formed between a gate poly and a power line, a contact formed in the interlayer dielectric film, and an epitaxial layer connected with the contact and formed only in a blue photodiode region.

Abstract translation: 提供一种CMOS图像传感器及其制造方法，其中防止了光电二极管的N型区域与器件隔离膜相邻并且暗电流减小。 CMOS图像传感器包括形成在栅极聚合物和电源线之间的层间电介质膜，形成在层间电介质膜中的接触体和与接触连接并仅形成在蓝色光电二极管区域中的外延层。

公开(公告)号：US07405097B2

公开(公告)日：2008-07-29

申请号：US11319586

申请日：2005-12-29

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/00

CPC classification number: H01L27/14689 ,  H01L27/14643

Abstract: A CMOS image sensor and a method for manufacturing the same are disclosed, in which a blue photodiode is imparted with a greater thickness to improve sensitivity of blue light. The blue photodiode of a CMOS image sensor includes a first lightly doped P-type epitaxial layer formed on a heavily doped P-type semiconductor substrate; a gate electrode of a transfer transistor formed on the first epitaxial layer; a first N-type blue photodiode region formed on the first epitaxial layer; and a second N-type blue photodiode region formed on the first epitaxial layer corresponding to the first blue photodiode region.

Abstract translation: 公开了一种CMOS图像传感器及其制造方法，其中蓝色光电二极管被赋予更大的厚度以提高蓝光的灵敏度。 CMOS图像传感器的蓝色光电二极管包括形成在重掺杂P型半导体衬底上的第一轻掺杂P型外延层; 形成在所述第一外延层上的转移晶体管的栅电极; 形成在第一外延层上的第一N型蓝色光电二极管区域; 以及形成在对应于第一蓝色光电二极管区域的第一外延层上的第二N型蓝色光电二极管区域。

公开(公告)号：US20080157246A1

公开(公告)日：2008-07-03

申请号：US12001638

申请日：2007-12-11

Applicant: Chang Hun Han ,  Joon Hwang

Inventor： Chang Hun Han ,  Joon Hwang

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

Abstract: An image sensor may include a color filter layer on a semiconductor substrate; and a microlens on the color filter layer and including a non-photosensitive insulating layer.

Abstract translation: 图像传感器可以包括半导体衬底上的滤色器层; 以及滤色器层上的微透镜，并且包括非感光绝缘层。

公开(公告)号：US20080157141A1

公开(公告)日：2008-07-03

申请号：US11875419

申请日：2007-10-19

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/113 ,  H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14692 ,  H01L23/38 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/16 ,  H01L31/024 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a CMOS device including: sequentially forming a first silicon oxide film and a first polysilicon film on a lower substrate; performing an ion implantation process with respect to the first polysilicon film to form a plurality of lower conductors spaced apart from one another at a predetermined interval; forming a plurality of N-type semiconductor films and P-type semiconductor films which are formed by being spaced apart from one another at a predetermined interval and are in contact with the lower conductors; forming a plurality of upper conductors electrically connected to the N-type semiconductor films and P-type semiconductor films; forming an upper substrate on the upper conductors; forming a second polysilicon film on the upper substrate; forming a device isolation film and a photodiode in the second polysilicon film; forming a gate electrode including an insulating sidewall on the second polysilicon film; forming an insulating film on an epitaxial layer with the gate electrode; forming a color filter array on the insulating film; forming a planarization layer on the color filter array; and forming a microlens on the planarization layer.

Abstract translation: 一种制造CMOS器件的方法，包括：在下基板上依次形成第一氧化硅膜和第一多晶硅膜; 对所述第一多晶硅膜进行离子注入工艺以形成以预定间隔彼此间隔开的多个下导体; 形成多个N型半导体膜和P型半导体膜，它们以预定间隔彼此间隔开并与下导体接触; 形成电连接到N型半导体膜和P型半导体膜的多个上导体; 在上导体上形成上基板; 在上基板上形成第二多晶硅膜; 在所述第二多晶硅膜中形成器件隔离膜和光电二极管; 在所述第二多晶硅膜上形成包括绝缘侧壁的栅电极; 在栅电极的外延层上形成绝缘膜; 在绝缘膜上形成滤色器阵列; 在所述滤色器阵列上形成平坦化层; 并在平坦化层上形成微透镜。

公开(公告)号：US07344911B2

公开(公告)日：2008-03-18

申请号：US11319585

申请日：2005-12-29

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/00

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14687

Abstract: A CMOS image sensor and a method for fabricating the same are provided, in which an N type region of a photodiode is prevented from adjoining a device isolation film and a dark current is reduced. The CMOS image sensor includes an interlayer dielectric film formed between a gate poly and a power line, a contact formed in the interlayer dielectric film, and an epitaxial layer connected with the contact and formed only in a blue photodiode region.

公开(公告)号：US20080044951A1

公开(公告)日：2008-02-21

申请号：US11812145

申请日：2007-06-15

Applicant: Hyo-jae Bang ,  Dong-chun Lee ,  Seong-chan Han ,  Chang-yong Park ,  Hun Han

Inventor： Hyo-jae Bang ,  Dong-chun Lee ,  Seong-chan Han ,  Chang-yong Park ,  Hun Han

IPC: H01L23/52 ,  H01L21/00

CPC classification number: H01L21/563 ,  H01L24/10 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor package may include a substrate having external contact terminals. A semiconductor chip having bonding pads may be formed on the substrate. Conductive bumps may connect the external contact terminals of the substrate to the bonding pads of the semiconductor chip. An underfill may be interposed between the substrate and the semiconductor chip. The underfill may include a first underfill region composed of a first material adjacent to the semiconductor chip and a second underfill region composed of a second material adjacent to the substrate, the first material having a higher glass transition temperature than the second material.

Abstract translation: 半导体封装可以包括具有外部接触端子的衬底。 具有接合焊盘的半导体芯片可以形成在基板上。 导电凸块可以将衬底的外部接触端子连接到半导体芯片的接合焊盘。 可以在基板和半导体芯片之间插入底部填充物。 底部填充物可以包括由与半导体芯片相邻的第一材料组成的第一底部填充区域和由与基底相邻的第二材料构成的第二底部填充区域，第一材料具有比第二材料更高的玻璃化转变温度。

公开(公告)号：US20060280540A1

公开(公告)日：2006-12-14

申请号：US11449682

申请日：2006-06-09

Applicant: Dong-hun Han

Inventor： Dong-hun Han

IPC: B41J2/315

CPC classification number: B41J2/32

Abstract: A thermal image forming apparatus includes a platen roller and a thermal printhead. A heating portion of the thermal printhead has a plurality of heating elements arranged along an area where the platen roller and the thermal printhead form a printing nip. A plurality of driving integrated circuits are mounted on a substrate and connected to the heating elements of the heating portion. A block is formed higher than the driving integrated circuits such that the driving integrated circuits are disposed between the block and the heating portion. A conveying unit is disposed toward the heating portion of the thermal printhead and conveys a sheet of paper between the platen roller and the thermal printhead.

公开(公告)号：US07135371B2

公开(公告)日：2006-11-14

申请号：US10747602

申请日：2003-12-29

Applicant: Chang Hun Han ,  Dong Yeal Keum

Inventor： Chang Hun Han ,  Dong Yeal Keum

IPC: H01L21/336

CPC classification number: H01L21/823475 ,  H01L21/76232 ,  H01L21/823481

Abstract: Methods of fabricating semiconductor devices are disclosed. One example method includes forming a gate oxide and a gate electrode on a semiconductor substrate; performing a first ion implantation process for the formation of an LDD (lightly doped drain) region in the substrate; forming spacers on the sidewalls of the gate electrode; performing a second ion implantation process for the formation of a junction region in the substrate using the spacers as mask; forming a trench for device isolation by removing selectively the top portion of the substrate between the spacers; forming a sidewall oxide layer on the resulting substrate; forming a diffusion barrier on the sidewall oxide layer; depositing a gap filling insulation layer over the diffusion barrier; planarizing the gap filling insulating layer; and removing selectively some part of the gap filling insulation layer to form contact holes.

Abstract translation: 公开了制造半导体器件的方法。 一种示例性方法包括在半导体衬底上形成栅极氧化物和栅电极; 执行用于在衬底中形成LDD（轻掺杂漏极）区域的第一离子注入工艺; 在栅电极的侧壁上形成间隔物; 执行第二离子注入工艺，以使用间隔物作为掩模在衬底中形成接合区域; 通过选择性地去除所述间隔物之间​​的所述衬底的顶部而形成用于器件隔离的沟槽; 在所得衬底上形成侧壁氧化物层; 在侧壁氧化物层上形成扩散阻挡层; 在扩散阻挡层上沉积间隙填充绝缘层; 平面化间隙填充绝缘层; 并且选择性地移除间隙填充绝缘层的一部分以形成接触孔。