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124 条记录 (耗时 0.019 秒)

    System and method to control a direction of a current applied to a magnetic tunnel junction
    81.
    发明授权
    System and method to control a direction of a current applied to a magnetic tunnel junction 有权
    控制施加到磁性隧道结的电流的方向的系统和方法

    公开(公告)号：US08208291B2

    公开(公告)日：2012-06-26

    申请号：US12687310

    申请日：2010-01-14

    申请人： Jung Pill Kim ,  Hari M. Rao ,  Kangho Lee

    发明人： Jung Pill Kim ,  Hari M. Rao ,  Kangho Lee

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1673 ,  H01L43/08

    摘要： A system and method to control a direction of a current applied to a magnetic tunnel junction is disclosed. In a particular embodiment, an apparatus comprises a magnetic tunnel junction (MTJ) storage element and a sense amplifier. The sense amplifier is coupled to a first path and to a second path. The first path includes a first current direction selecting transistor and the second path includes a second current direction selecting transistor. The first path is coupled to a bit line of the MTJ storage element and the second path is coupled to a source line of the MTJ storage element.

    摘要翻译： 公开了一种控制施加到磁性隧道结的电流方向的系统和方法。 在特定实施例中，一种装置包括磁性隧道结（MTJ）存储元件和读出放大器。 感测放大器耦合到第一路径和第二路径。 第一路径包括第一电流方向选择晶体管，第二路径包括第二电流方向选择晶体管。 第一路径耦合到MTJ存储元件的位线，并且第二路径耦合到MTJ存储元件的源极线。

    Write Energy Conservation In Memory
    82.
    发明申请
    Write Energy Conservation In Memory 有权
    写节能记忆

    公开(公告)号：US20110280065A1

    公开(公告)日：2011-11-17

    申请号：US12777468

    申请日：2010-05-11

    申请人： Hari M. Rao ,  Jung Pill Kim ,  Taehyun Kim ,  Xiaochun Zhu ,  Kangho Lee ,  Wuyang Hao

    发明人： Hari M. Rao ,  Jung Pill Kim ,  Taehyun Kim ,  Xiaochun Zhu ,  Kangho Lee ,  Wuyang Hao

    IPC分类号： G11C11/14 ,  G11C11/416

    CPC分类号： G11C11/1675 ,  G11C11/1693

    摘要： A method writes data to a resistive memory, such as spin torque transfer magnetic random access memory (STT-MRAM). The method writes received bits of data to a memory cell array, in response to a first write signal. The method also reads stored data from the memory cell array, after the first write signal is generated, and then compares the stored data with the received bits of data to determine whether each of the received bits of data was written to the memory. In response to a second write signal, received bits of data determined not to have been written during the first write signal, are written.

    摘要翻译： 一种方法将数据写入电阻性存储器，如自旋扭矩传递磁随机存取存储器（STT-MRAM）。 该方法响应于第一写入信号将接收到的数据位写入存储单元阵列。 该方法还在生成第一写信号之后从存储单元阵列中读取存储的数据，然后将所存储的数据与接收的数据位进行比较，以确定每个接收的数据位是否被写入存储器。 响应于第二写入信号，写入在第一写入信号期间被确定为不被写入的数据的接收位。

    Method and Apparatus to Provide a Clock Signal to a Charge Pump
    83.
    发明申请
    Method and Apparatus to Provide a Clock Signal to a Charge Pump 失效
    向电荷泵提供时钟信号的方法和装置

    公开(公告)号：US20110238203A1

    公开(公告)日：2011-09-29

    申请号：US12729281

    申请日：2010-03-23

    申请人： Wuyang Hao ,  Jung Pill Kim ,  Jungwon Suh

    发明人： Wuyang Hao ,  Jung Pill Kim ,  Jungwon Suh

    IPC分类号： G06F17/50 ,  G05F3/02 ,  G06F1/10

    CPC分类号： G06F1/06 ,  H02M3/07 ,  H02M3/073 ,  H02M2003/077

    摘要： A method and apparatus for providing a clock signal to a charge pump is disclosed. In a particular embodiment, the method includes providing a first clock signal to a first charge pump unit of a charge pump. The method further includes providing a second clock signal to a second charge pump unit of the charge pump. A low-to-high transition of the first clock signal occurs substantially concurrently with a high-to-low transition of the second clock signal. Only one clock signal may be at a logic high voltage level at any given time.

    摘要翻译： 公开了一种用于向电荷泵提供时钟信号的方法和装置。 在特定实施例中，该方法包括向电荷泵的第一电荷泵单元提供第一时钟信号。 该方法还包括向电荷泵的第二电荷泵单元提供第二时钟信号。 第一时钟信号的从低到高的跃迁与第二时钟信号的高到低的跃迁基本同时发生。 在任何给定时间，只有一个时钟信号可能处于逻辑高电压电平。

    Reference Cell Write Operations At A Memory
    84.
    发明申请
    Reference Cell Write Operations At A Memory 有权
    内存中的参考单元写入操作

    公开(公告)号：US20110235391A1

    公开(公告)日：2011-09-29

    申请号：US12731204

    申请日：2010-03-25

    申请人： Jung Pill Kim ,  Hari M. Rao ,  Xia Li

    发明人： Jung Pill Kim ,  Hari M. Rao ,  Xia Li

    IPC分类号： G11C11/00 ,  G11C11/416 ,  G11C11/14

    CPC分类号： G11C13/004 ,  G11C8/10 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C13/0023 ,  G11C13/0026 ,  G11C2013/0054

    摘要： A method of selecting a reference circuit for a write operation is disclosed. The method comprises selecting a reference circuit for a write operation based on an output of a row decode circuit and a column decode circuit. The reference circuit is programmed concurrently with a write operation of at least one of a plurality of memory cells in a memory array without requiring an external reference circuit write command.

    摘要翻译： 公开了一种选择用于写入操作的参考电路的方法。 该方法包括基于行解码电路和列解码电路的输出来选择用于写入操作的参考电路。 参考电路与存储器阵列中的多个存储单元中的至少一个的写入操作同时编程，而不需要外部参考电路写入命令。

    Duty cycle corrector
    89.
    发明授权
    Duty cycle corrector 有权
    占空比校正器

    公开(公告)号：US07304517B2

    公开(公告)日：2007-12-04

    申请号：US11442842

    申请日：2006-05-30

    申请人： Joonho Kim ,  Jung Pill Kim ,  Jonghee Han

    发明人： Joonho Kim ,  Jung Pill Kim ,  Jonghee Han

    IPC分类号： H03K3/017

    CPC分类号： G06F1/04 ,  H03K5/1565

    摘要： A duty cycle corrector, including a first, second circuit and a third circuit is disclosed. The third circuit is configured to obtain a threshold value in response to charge flow that is regulated by the first circuit and the second circuit, wherein the first circuit is configured to receive a clock signal and change the charge flow at a first transition of the clock signal. The second circuit is configured to change the charge flow at a second transition of the clock signal. The first circuit and the second circuit are configured to change the charge flow in response to obtaining the threshold value.

    摘要翻译： 公开了包括第一，第二电路和第三电路的占空比校正器。 第三电路被配置为响应于由第一电路和第二电路调节的电荷流量获得阈值，其中第一电路被配置为接收时钟信号并且在时钟的第一转变处改变电荷流 信号。 第二电路被配置为在时钟信号的第二转变处改变电荷流。 第一电路和第二电路被配置为响应于获得阈值来改变电荷流。

    Comparator using differential amplifier with reduced current consumption
    90.
    发明授权
    Comparator using differential amplifier with reduced current consumption 有权
    比较器使用差分放大器，降低电流消耗

    公开(公告)号：US07298182B2

    公开(公告)日：2007-11-20

    申请号：US10867896

    申请日：2004-06-15

    申请人： Jung Pill Kim

    发明人： Jung Pill Kim

    IPC分类号： H03K5/22

    CPC分类号： H03K19/0016 ,  G11C11/406 ,  G11C11/40615 ,  H03K5/2472

    摘要： A comparator circuit with reduced current consumption, and other circuits utilizing the same, are provided. The comparator circuit may achieve reduced current consumption by preventing current flow via a switching transistors responsive to the voltage level of the input signal.

    摘要翻译： 提供了具有降低的电流消耗的比较器电路，以及使用其的其它电路。 比较器电路可以通过响应于输入信号的电压电平的开关晶体管阻止电流来实现降低的电流消耗。