公开(公告)号：US07825515B2

公开(公告)日：2010-11-02

申请号：US12206187

申请日：2008-09-08

Applicant: Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata ,  Kazumasa Kawase

Inventor： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata ,  Kazumasa Kawase

IPC: H01L23/48

CPC classification number: H01L21/2855 ,  H01L23/53223 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.

Abstract translation: 半导体器件包括以硅为主要成分的膜，以及与以硅为主要成分的膜直接连接的源极，漏电极等铝合金膜，例如欧姆低电阻 Si膜，并且在接合界面附近至少含有Al，Ni和N。 当直接连接到含硅作为主要成分的膜而不具有由高熔点金属形成的阻挡层时，铝合金膜具有良好的接触特性。

公开(公告)号：US20100219906A1

公开(公告)日：2010-09-02

申请号：US12608397

申请日：2009-10-29

Applicant: Michio MIURA ,  Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Kazunori Inoue ,  Satoru Matsuda

Inventor： Michio MIURA ,  Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Kazunori Inoue ,  Satoru Matsuda

IPC: H03H9/72 ,  H01L41/22

CPC classification number: H03H3/10 ,  H03H9/0222 ,  H03H9/25 ,  Y10T29/42 ,  Y10T29/49005

Abstract: An acoustic wave device includes a piezoelectric substrate, interdigital electrodes arranged on the piezoelectric substrate, a first dielectric element arranged between the interdigital electrodes, a second dielectric element that covers the interdigital electrodes and the first dielectric element, and an adjustment element that has been formed on the first dielectric element. The adjustment element has been formed from a material whose specific gravity is greater than that of the first dielectric element and that of the second dielectric element.

Abstract translation: 声波装置包括：压电基板，布置在压电基板上的叉指电极，布置在叉指电极之间的第一电介质元件，覆盖指状电极和第一电介质元件的第二电介质元件和已形成的调节元件 在第一电介质元件上。 调整元件由比重大于第一电介质元件和第二电介质元件的比重的材料形成。

公开(公告)号：US07629729B2

公开(公告)日：2009-12-08

申请号：US11541787

申请日：2006-10-03

Applicant: Kazunori Inoue ,  Takashi Matsuda ,  Jyouji Kimura

Inventor： Kazunori Inoue ,  Takashi Matsuda ,  Jyouji Kimura

IPC: H01L41/08

CPC classification number: H03H3/08 ,  H01L2224/11 ,  H03H9/059

Abstract: A surface acoustic wave device includes a piezoelectric substrate, a surface acoustic wave element composed of electrodes provided on the piezoelectric substrate and the piezoelectric substrate, a first seal resin portion provided on the piezoelectric substrate and having a cavity on the surface acoustic wave element, and an inorganic insulation film provided in contact with a surface of the piezoelectric substrate to surround the surface acoustic wave element.

Abstract translation: 表面声波装置包括压电基片，由压电基片上设置的电极和压电基片构成的表面声波元件，设置在压电基片上并在表面声波元件上具有空腔的第一密封树脂部分，以及 设置为与所述压电基板的表面接触以包围所述表面声波元件的无机绝缘膜。

公开(公告)号：US07586240B2

公开(公告)日：2009-09-08

申请号：US12018460

申请日：2008-01-23

Applicant: Keiji Tsuda ,  Jyouji Kimura ,  Shunichi Aikawa ,  Kazunori Inoue ,  Takashi Matsuda

Inventor： Keiji Tsuda ,  Jyouji Kimura ,  Shunichi Aikawa ,  Kazunori Inoue ,  Takashi Matsuda

IPC: H01L41/08

CPC classification number: H03H3/08 ,  H01L2224/11

Abstract: An acoustic wave device includes an acoustic wave element formed on a substrate, a first seal portion provided on the substrate so as to form a cavity above the acoustic wave element, and a second seal portion provided on the first seal portion, the first seal portion having a step so that the first seal portion has a width on a first side and another width on a second side arranged so that the first side is closer than the second side to the substrate, and the width on the first side is greater than the another width on the second side.

Abstract translation: 声波装置包括形成在基板上的声波元件，设置在基板上以在声波元件上方形成空腔的第一密封部分和设置在第一密封部分上的第二密封部分，第一密封部分 具有使所述第一密封部在第一侧具有宽度，在所述第二侧具有第二侧的另一宽度，使得所述第一侧比所述基板的所述第二侧更靠近，所述第一侧的宽度大于所述第一侧的宽度 第二侧的另一个宽度。

公开(公告)号：US07530305B2

公开(公告)日：2009-05-12

申请号：US11174459

申请日：2005-07-06

Applicant: Osamu Toyoda ,  Kazunori Inoue ,  Akira Tokai

Inventor： Osamu Toyoda ,  Kazunori Inoue ,  Akira Tokai

IPC: B41M1/10

CPC classification number: B41M1/10 ,  B41M3/006

Abstract: The present invention provides a new and highly reliable substrate manufacturing technology for manufacturing a substrate with a protrusion pattern, which can decrease structural defects caused by involving bubbles when the protrusion pattern is formed, can improve the reliability of the product and the yield of the product, does not require off-line steps such as vacuum deaeration, and therefore improves the production efficiency and simplifies the steps. According to the present invention, a molding material paste is filled into the concave portions of an intaglio plate for filling, an intaglio plate for transfer on which a specific groove pattern is formed is partially contacted with the intaglio plate for filling, the molding material is filled into the grooves of the intaglio plate for transfer, then the molding material is transferred from the intaglio plate for transfer to a substrate as a protrusion pattern.

Abstract translation: 本发明提供了一种用于制造具有突起图案的基板的新的高度可靠的基板制造技术，其可以在形成突起图案时减少由气泡引起的结构缺陷，可以提高产品的可靠性和产品的产量 ，不需要真空脱气等离线工序，因此提高了生产效率，简化了工序。 根据本发明，将成型材料浆料填充到用于填充的凹版的凹部中，形成有特定凹槽图案的转印用凹版板与用于填充的凹版板部分接触，成型材料为 填充到用于转印的凹版印版的凹槽中，然后将成型材料从凹版印刷转印到基板作为突起图案。

公开(公告)号：US20080199815A1

公开(公告)日：2008-08-21

申请号：US11905326

申请日：2007-09-28

Applicant: Osamu Toyoda ,  Akira Tokai ,  Kazunori Inoue ,  Fumihiro Namiki ,  Saburou Morita ,  Yojiro Shimada ,  Hitoshi Hirakawa ,  Takashi Katayama

Inventor： Osamu Toyoda ,  Akira Tokai ,  Kazunori Inoue ,  Fumihiro Namiki ,  Saburou Morita ,  Yojiro Shimada ,  Hitoshi Hirakawa ,  Takashi Katayama

IPC: G03F7/20

CPC classification number: H01J11/12 ,  H01J9/242 ,  H01J11/36

Abstract: A plasma display panel in which projections are formed in grooves between partitions and phosphor layers are provided on the projections so as to increase the area where phosphor adheres and thereby to increase the luminance. A couple of substrates are opposed to each other to form a discharge space. Band-like partitions partitioning the discharge space are arranged on the back or front substrate. Wall-like projections lower than the partitions and high enough to increase the area where phosphor layers are formed are provided in the region where the discharge space is formed in the long grooves between the partitions or around the discharge space. Phosphor layers are formed in the grooves between the partitions including the wall-like projections. A method for producing such a plasma display panel is also disclosed.

Abstract translation: 在突起上设置有在隔板和荧光体层之间的沟槽中形成有突起的等离子体显示面板，以增加荧光粉附着的面积，从而提高亮度。 一对基板彼此相对以形成放电空间。 分隔放电空间的带状分隔件布置在背面或正面基板上。 在隔板之间的长槽或放电空间周围的长槽内形成有放电空间的区域，设置有低于分隔壁的壁状突起，高度足以增加形成荧光体层的面积。 在包括壁状突起的隔板之间的沟槽中形成荧光体层。 还公开了一种用于制造这种等离子体显示面板的方法。

公开(公告)号：US20080125662A1

公开(公告)日：2008-05-29

申请号：US11987173

申请日：2007-11-28

Applicant: Shunichi Aikawa ,  Takumi Kooriike ,  Jyouji Kimura ,  Keiji Tsuda ,  Masayuki Kitajima ,  Kazunori Inoue ,  Takashi Matsuda

Inventor： Shunichi Aikawa ,  Takumi Kooriike ,  Jyouji Kimura ,  Keiji Tsuda ,  Masayuki Kitajima ,  Kazunori Inoue ,  Takashi Matsuda

IPC: A61B8/12 ,  H04R31/00

CPC classification number: H03H3/08 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/4908

Abstract: A method of manufacturing an acoustic wave device includes forming a first sealing portion on a substrate having an acoustic wave element thereon so that a functional region, in which an acoustic wave oscillates, of the acoustic wave element acts as a first non-covered portion and a cutting region for individuating acts as a second non-covered portion, forming a second sealing portion on the first sealing portion so as to cover the first non-covered portion and the second non-covered portion, and cutting off the substrate and the second sealing portion so that the second non-covered portion is divided.

Abstract translation: 一种制造声波器件的方法包括在其上具有声波元件的衬底上形成第一密封部分，使得声波元件的声波振荡的功能区域用作第一非覆盖部分， 用于个体化作为第二非覆盖部分的切割区域，在所述第一密封部分上形成第二密封部分以覆盖所述第一非覆盖部分和所述第二未覆盖部分，并且切断所述基板，并且所述第二密封部分 密封部分，使得第二未覆盖部分被分割。

公开(公告)号：US20080122318A1

公开(公告)日：2008-05-29

申请号：US11987175

申请日：2007-11-28

Applicant: Shunichi Aikawa ,  Jyouji Kimura ,  Keiji Tsuda ,  Kazunori Inoue ,  Takashi Matsuda

Inventor： Shunichi Aikawa ,  Jyouji Kimura ,  Keiji Tsuda ,  Kazunori Inoue ,  Takashi Matsuda

IPC: H01L41/083 ,  B05D5/12

CPC classification number: H03H3/08 ,  H03H9/1092 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49798

Abstract: A method of manufacturing an acoustic wave device includes: forming a conductive pattern on a wafer made of a piezoelectric substrate having an acoustic wave element, the conductive pattern including a first conductive pattern, a second conductive pattern and a third conductive pattern, the first conductive pattern being continuously formed on a cutting region for individuating the wafer, the second conductive pattern being formed on an electrode region where a plated electrode is to be formed and being connected to the acoustic wave element, the third conductive pattern connecting the first conductive pattern and the second conductive pattern; forming an insulating layer on the wafer so as to have a opening on the second conductive pattern; forming the plated electrode on the second conductive pattern by providing an electrical current to the second conductive pattern via the first conductive pattern and the third conductive pattern; and cutting off and individuating the wafer along the cutting region.

Abstract translation: 一种制造声波器件的方法包括：在由具有声波元件的压电基片制成的晶片上形成导电图案，所述导电图案包括第一导电图案，第二导电图案和第三导电图案，所述第一导电 图案连续地形成在用于个别晶片的切割区域上，第二导电图案形成在要形成镀覆电极的电极区域上，并连接到声波元件，第三导电图案连接第一导电图案和 第二导电图案; 在所述晶片上形成绝缘层以在所述第二导电图案上具有开口; 通过经由第一导电图案和第三导电图案向第二导电图案提供电流，在第二导电图案上形成电镀电极; 并沿着切割区域切割和分离晶片。

公开(公告)号：US07371508B2

公开(公告)日：2008-05-13

申请号：US10810661

申请日：2004-03-29

Applicant: Osamu Toyoda ,  Akira Tokai ,  Kazunori Inoue ,  Fumihiro Namiki ,  Saburou Morita ,  Yojiro Shimada ,  Hitoshi Hirakawa ,  Takashi Katayama

Inventor： Osamu Toyoda ,  Akira Tokai ,  Kazunori Inoue ,  Fumihiro Namiki ,  Saburou Morita ,  Yojiro Shimada ,  Hitoshi Hirakawa ,  Takashi Katayama

IPC: H01J9/227

CPC classification number: H01J11/12 ,  H01J9/242 ,  H01J11/36

Abstract: A plasma display panel in which projections are formed in grooves between partitions and phosphor layers are provided on the projections so as to increase the area where phosphor adheres and thereby to increase the luminance. A couple of substrates are opposed to each other to form a discharge space. Band-like partitions partitioning the discharge space are arranged on the back or front substrate. Wall-like projections lower than the partitions and high enough to increase the area where phosphor layers are formed are provided in the region where the discharge space is formed in the long grooves between the partitions or around the discharge space. Phosphor layers are formed in the grooves between the partitions including the wall-like projections. A method for producing such a plasma display panel is also disclosed.

公开(公告)号：US20070295967A1

公开(公告)日：2007-12-27

申请号：US11759000

申请日：2007-06-06

Applicant: Kazuyuki HARADA ,  Nobuaki Ishiga ,  Kazunori Inoue

Inventor： Kazuyuki HARADA ,  Nobuaki Ishiga ,  Kazunori Inoue

IPC: H01L29/06 ,  H01L21/336

CPC classification number: H01L27/124 ,  H01L29/41733

Abstract: An active matrix TFT array substrate includes a gate electrode and a gate line formed from a first metal film over a transparent insulating substrate, a gate insulating film to cover the gate electrode and gate line, a semiconductor layer formed over the gate insulating film, a source electrode and a drain electrode formed over the semiconductor layer and a pixel electrode formed from a transparent conductive film. Either of the source or the drain electrode is formed from the transparent conductive film and the active matrix TFT array substrate further comprises a second metal film thereover mainly including one of Al, Cu and Ag.

Abstract translation: 有源矩阵TFT阵列基板包括由透明绝缘基板上的第一金属膜形成的栅极电极和栅极线，覆盖栅极电极和栅极线的栅极绝缘膜，栅极绝缘膜上形成的半导体层， 源电极和形成在半导体层上的漏电极和由透明导电膜形成的像素电极。 源电极或漏电极中的任一个由透明导电膜形成，有源矩阵TFT阵列基板还包括主要包括Al，Cu和Ag之一的第二金属膜。