公开(公告)号：US5910801A

公开(公告)日：1999-06-08

申请号：US924062

申请日：1997-08-28

Applicant: Bryan Savoye Rosenburg ,  Tova Roth ,  Michael Hadley Skelton ,  James Hoyet Summers

Inventor： Bryan Savoye Rosenburg ,  Tova Roth ,  Michael Hadley Skelton ,  James Hoyet Summers

IPC: G06F3/14 ,  G06F3/033 ,  G06F3/048 ,  G06T3/40 ,  G06T11/80 ,  G06F15/00

CPC classification number: G06F3/0481 ,  G06T3/40

Abstract: A zoom control mechanism includes a context display for displaying a representation of a data set, a zoom display for displaying a representation of a zoom interval within the data set, a context indicator that indicates a start point or an end point of a zoom interval within a context display, and a zoom indicator, corresponding to the context indicator, that indicates the start point or end point of the zoom interval within the zoom display. The zoom interval is updated according to user selection and movement of the context indicator and the zoom indicator to a new location within the context display and the zoom display, respectively.

Abstract translation: 变焦控制机构包括用于显示数据组的表示的上下文显示，用于显示数据组内的缩放间隔的表示的缩放显示，指示缩放间隔的起始点或终点的上下文指示符 对应于上下文指示符的上下文显示和缩放指示符，其指示缩放显示内的缩放间隔的起始点或终点。 根据用户的选择和上下文指示符的移动以及变焦指示符分别更新到上下文显示和变焦显示中的新位置的缩放间隔。

公开(公告)号：US4656519A

公开(公告)日：1987-04-07

申请号：US784662

申请日：1985-10-04

Applicant: Eugene D. Savoye

Inventor： Eugene D. Savoye

IPC: H01L27/148 ,  H01L29/768 ,  H04N5/359 ,  H04N5/3728 ,  H04N3/14 ,  H01L27/14

CPC classification number: H04N3/1568 ,  H01L27/1464 ,  H01L27/14831 ,  H01L27/14875 ,  H01L29/76833 ,  H04N3/1537

Abstract: Back-illuminated CCD imagers of interline transfer type are made possible by deep, highly doped implant regions which bury the CCDs with respect to the back-illuminated surfaces of the imager substrates. Transfer smear caused by photoconversion in the CCD charge transfer channels must be suppressed in certain of these back-illuminated CCD imagers of interline transfer type, and suitable suppression methods are described.

Abstract translation: 通过深的高度掺杂的注入区域使得行间转移型的背照式CCD成像器成为可能，其相对于成像器衬底的背面照射表面掩埋CCD。 必须抑制CCD电荷转移通道中的光转换引起的转移污迹，这些转移型线间转移型的这些背照式CCD成像器中的一些，并且描述了合适的抑制方法。

公开(公告)号：US4603342A

公开(公告)日：1986-07-29

申请号：US761677

申请日：1985-08-02

Applicant: Eugene D. Savoye ,  Walter F. Kosonocky ,  Lloyd F. Wallace

Inventor： Eugene D. Savoye ,  Walter F. Kosonocky ,  Lloyd F. Wallace

IPC: H01L27/148 ,  H01L31/18 ,  H01L27/14 ,  G11C19/28

CPC classification number: H01L27/14887 ,  H01L31/18

Abstract: An imaging array of the charge transfer type having improved sensitivity is disclosed. The array includes a plurality of substantially parallel charge transfer channels with channel stops therebetween which extend a distance into a semiconductor body. At least some of the channel stops have blooming drains therein for the removal of excess photogenerated charge. The improvement comprises potential barrier means which constrain electrical charge generated by absorption of light in the body to flow into the channels while preventing the loss of such charge by direct flow to the blooming drains. Potential barrier means include buried barrier regions extending a further distance into the body from those channel stops having blooming drain regions therein.

Abstract translation: 公开了具有改进的灵敏度的电荷转移类型的成像阵列。 该阵列包括多个基本上平行的电荷传输通道，其间具有通道阻挡件，其延伸到半导体本体中的距离。 至少一些通道挡板在其中具有开口的排水口以去除过量的光生电荷。 该改进包括势垒装置，其限制通过吸收身体中的光而产生的电荷流入通道，​​同时通过直接流动到开花的排水口来防止这种电荷的损失。 电势屏障装置包括从其中具有开放漏极区的那些通道阻挡区向主体延伸更远距离的掩埋阻挡区域。

公开(公告)号：US4547957A

公开(公告)日：1985-10-22

申请号：US636562

申请日：1984-08-01

Applicant: Eugene D. Savoye ,  Charles M. Tomasetti

Inventor： Eugene D. Savoye ,  Charles M. Tomasetti

IPC: H01L27/146 ,  H01L31/18 ,  H01L27/14

CPC classification number: H01L27/14698 ,  H01L27/14654 ,  H01L27/14687 ,  Y10S148/024 ,  Y10S148/06 ,  Y10S148/172

Abstract: An imaging device includes a wafer of single crystal semiconductor material having a first surface with an input surfacing region which extends into the wafer from the first surface and a second surface with a charge storage portion which includes a plurality of discrete charge storing regions which extend into the wafer of the second surface. The wafer includes a potential barrier within the input signal sensing portion for controlling blooming. The wafer is improved by including a passivation region within the input sensing portion for stabilizing the energy level of the conductivity band of the minority carriers at the Fermi energy level of the semiconductor wafer. Additionally, an electrical leakage reduction region extends into the wafer from the second surface. The leakage reduction region is contiguous with each of the discrete charge storage regions.

Abstract translation: 一种成像装置包括具有第一表面的单晶半导体材料晶片，第一表面具有从第一表面延伸到晶片中的输入表面区域和具有电荷存储部分的第二表面，该电荷存储部分包括多个分立的电荷存储区域， 第二表面的晶片。 晶片包括用于控制起霜的输入信号感测部分内的势垒。 通过在输入感测部分内包括钝化区域来改善晶片，以稳定半导体晶片的费米能级的少数载流子的导电带的能级。 此外，漏电减少区域从第二表面延伸到晶片。 泄漏减少区域与每个离散电荷存储区域相邻。

公开(公告)号：US1405134A

公开(公告)日：1922-01-31

申请号：US45797521

申请日：1921-04-02

Applicant: FRANK SAVOYE W

Inventor： ROBERT HOYME CHRISTOPHER

IPC: G09B1/00

CPC classification number: G09B1/00

公开(公告)号：US774537A

公开(公告)日：1904-11-08

申请号：US1904190503

申请日：1904-01-25

Applicant: SAVOYE EMILE

Inventor： SAVOYE EMILE

CPC classification number: A41C1/00