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    Field effect transistor (FET) having nano tube and method of manufacturing the FET
    83.
    发明授权
    Field effect transistor (FET) having nano tube and method of manufacturing the FET 有权
    具有纳米管的场效应晶体管（FET）及其制造方法

    公开(公告)号：US08053846B2

    公开(公告)日：2011-11-08

    申请号：US11826170

    申请日：2007-07-12

    Applicant: Seung-Nam Cha ,  Jae-Eun Jang ,  Jae-Eun Jung ,  Yong-Wan Jin ,  Byong-Gwon Song

    Inventor： Seung-Nam Cha ,  Jae-Eun Jang ,  Jae-Eun Jung ,  Yong-Wan Jin ,  Byong-Gwon Song

    IPC: H01L27/088

    CPC classification number: H01L29/42372 ,  H01L21/2652 ,  H01L21/2807 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/515 ,  H01L29/6659

    Abstract: A transistor includes: a semiconductor substrate; a channel region arranged on the semiconductor substrate; a source and a drain respectively arranged on either side of the channel region; and a conductive nano tube gate arranged on the semiconductor substrate to transverse the channel region between the source and the drain. Its method of manufacture includes: arranging a conductive nano tube on a surface of a semiconductor substrate; defining source and drain regions having predetermined sizes and traversing the nano tube; forming a metal layer on the source and drain regions; removing a portion of the metal layer formed on the nano tube to respectively form source and drain electrodes separated from the metal layer on either side of the nano tube; and doping a channel region below the nano tube arranged between the source and drain electrodes by ion-implanting.

    Abstract translation: 晶体管包括：半导体衬底; 布置在所述半导体衬底上的沟道区; 分别布置在通道区域的任一侧上的源极和漏极; 以及布置在半导体衬底上以横向源极和漏极之间的沟道区域的导电纳米管栅极。 其制造方法包括：在半导体衬底的表面上布置导电纳米管; 限定具有预定尺寸并穿过纳米管的源区和漏区; 在源极和漏极区域上形成金属层; 去除形成在纳米管上的金属层的一部分，以分别形成与纳米管的任一侧上的金属层分离的源极和漏极; 以及通过离子注入在排列在源极和漏极之间的纳米管下方的沟道区域掺杂。

    Photoelectrochemical cell
    85.
    发明授权
    Photoelectrochemical cell 失效
    光电化学电池

    公开(公告)号：US07994422B2

    公开(公告)日：2011-08-09

    申请号：US11047627

    申请日：2005-02-02

    Applicant: Yong-Wan Jin ,  Jong-Min Kim

    Inventor： Yong-Wan Jin ,  Jong-Min Kim

    IPC: H01L31/00

    CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01G9/2027 ,  H01G9/2031 ,  H01L51/0048 ,  H01L51/0052 ,  H01M4/9016 ,  H01M4/96 ,  H01M14/005 ,  Y02E10/542

    Abstract: A particulate structure containing a carbon nanotube thus exhibiting improved electron-transferring property, a semiconductor electrode for a photoelectrochemical cell containing a carbon nanotube thus exhibiting improved electron-transferring property, an electrolytic solution for a photoelectrochemical cell containing a carbon nanotube thus exhibiting improved oxidation-reduction property, a reduction electrode for a photoelectrochemical cell containing a carbon nanotube thus exhibiting improved reduction property; and a photoelectrochemical cell applying at least one aspect above.

    Abstract translation: 含有碳纳米管的颗粒结构，因此具有改善的电子传递性能，含有碳纳米管的光电化学电池的半导体电极，因此具有改善的电子传递性能，含有碳纳米管的光电化学电池的电解液， 还原性能，含有碳纳米管的光电化学电池的还原电极，因此具有改进的还原性能; 和至少应用至少一个方面的光电化学电池。

    Method of manufacturing field emission device
    87.
    发明授权
    Method of manufacturing field emission device 有权
    场致发射装置的制造方法

    公开(公告)号：US07942714B2

    公开(公告)日：2011-05-17

    申请号：US11790657

    申请日：2007-04-26

    Applicant: Ho-Suk Kang ,  Yong-Wan Jin ,  Sun-Il Kim ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Shang-Hyeun Park

    Inventor： Ho-Suk Kang ,  Yong-Wan Jin ,  Sun-Il Kim ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Shang-Hyeun Park

    IPC: H01J9/02 ,  H01J1/304

    CPC classification number: H01J63/02 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/0455

    Abstract: A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.

    Abstract translation: 场发射显示器的制造方法包括：在基板上依次形成阴极电极，绝缘层和栅极材料层; 在栅极材料层的上表面上形成金属牺牲层; 形成通孔以暴露金属牺牲层和栅极材料层中的绝缘层; 形成发射极孔，露出通过该通孔的绝缘层中的阴极电极; 通过蚀刻构成发射极孔的上壁的栅极材料层来形成栅电极; 以及在位于通孔下方的阴极电极的上表面上形成碳纳米管（CNT）的发射极。

    Electron multiplier electrode and terahertz radiation source using the same
    88.
    发明授权
    Electron multiplier electrode and terahertz radiation source using the same 有权
    电子倍增器电极和太赫兹辐射源使用相同

    公开(公告)号：US07768181B2

    公开(公告)日：2010-08-03

    申请号：US12007186

    申请日：2008-01-08

    Applicant: Chan-wook Baik ,  Yong-wan Jin ,  Sun-il Kim ,  Min-jong Bae

    Inventor： Chan-wook Baik ,  Yong-wan Jin ,  Sun-il Kim ,  Min-jong Bae

    IPC: H01J1/62

    CPC classification number: H01J43/04

    Abstract: Provided are an electron multiplier electrode using a secondary electron extraction electrode and a terahertz radiation source using the electron multiplier electrode. The electron multiplier electrode includes: a cathode; an emitter disposed on the cathode and extracting electron beams; a gate electrode for switching the electron beams, the gate electrode being disposed on the cathode to surround the emitter; and a secondary electron extraction electrode disposed on the gate electrode and including a secondary electron extraction layer extracting secondary electrons due to collision of the electron beams.

    Abstract translation: 提供了使用二次电子提取电极和使用电子倍增器电极的太赫兹辐射源的电子倍增器电极。 电子倍增器电极包括：阴极; 设置在阴极上并提取电子束的发射器; 用于切换电子束的栅电极，栅电极设置在阴极上以围绕发射极; 以及二次电子提取电极，设置在栅电极上，并且包括由于电子束的碰撞而提取二次电子的二次电子提取层。

    Field emission device and its method of manufacture
    89.
    发明授权
    Field emission device and its method of manufacture 有权
    场发射装置及其制造方法

    公开(公告)号：US07755273B2

    公开(公告)日：2010-07-13

    申请号：US11798612

    申请日：2007-05-15

    Applicant: Deuk-seok Chung ,  Yong-chul Kim ,  Yong-wan Jin ,  Sun-il Kim ,  Ho-suk Kang ,  Chan-wook Baik

    Inventor： Deuk-seok Chung ,  Yong-chul Kim ,  Yong-wan Jin ,  Sun-il Kim ,  Ho-suk Kang ,  Chan-wook Baik

    IPC: H01J1/62

    CPC classification number: H01J29/04 ,  H01J31/127 ,  H01J2201/30469

    Abstract: A field emission device and its method of manufacture includes: a substrate; a plurality of cathode electrodes formed on the substrate and having slot shaped cathode holes to expose the substrate; emitters formed on the substrate exposed through each of the cathode holes and separated from both side surfaces of the cathode holes, the emitters being formed along a lengthwise direction of the cathode holes; an insulating layer formed on the substrate to cover the cathode electrodes and having insulating layer holes communicating with the cathode holes; and a plurality of gate electrodes formed on the insulating layer and having gate holes communicating with the insulating layer holes.

    Abstract translation: 场致发射器件及其制造方法包括：衬底; 多个阴极电极，形成在基板上，并具有用于露出基板的狭槽形阴极孔; 所述发光体形成在所述基板上，通过所述阴极孔露出并从所述阴极孔的两侧面分离，所述发射体沿着所述阴极孔的长度方向形成; 绝缘层，形成在所述基板上以覆盖所述阴极并具有与所述阴极孔连通的绝缘层孔; 以及形成在绝缘层上并具有与绝缘层孔连通的栅极孔的多个栅电极。

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