公开(公告)号：US20210087679A1

公开(公告)日：2021-03-25

申请号：US17014820

申请日：2020-09-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jereld Lee Winkler ,  Eric James Shero ,  Carl Louis White ,  Shankar Swaminathan ,  Bhushan Zope

IPC: C23C16/448 ,  H01L21/02

Abstract: A semiconductor processing device is disclosed. The device can include a reactor and a solid source vessel configured to supply a vaporized solid reactant to the reactor. A process control chamber can be disposed between the solid source vessel and the reactor. The device can include a valve upstream of the process control chamber. A control system can be configured to control operation of the valve based at least in part on feedback of measured pressure in the process control chamber.

公开(公告)号：US20200340109A1

公开(公告)日：2020-10-29

申请号：US16926493

申请日：2020-07-10

Applicant: ASM IP Holding B.V.

Inventor： Mohith Verghese ,  Eric James Shero ,  Carl Louis White ,  Kyle Fondurulia

IPC: C23C16/448

Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.

公开(公告)号：US20200299836A1

公开(公告)日：2020-09-24

申请号：US16813527

申请日：2020-03-09

Applicant: ASM IP HOLDING B.V.

Inventor： Dinkar Nandwana ,  Jereld Lee Winkler ,  Eric James Shero ,  Todd Robert Dunn ,  Carl Louis White

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/67

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. A supply channel provides fluid communication between a gas source and the bore, and the supply channel is disposed at least partially in the second block. A metallic seal is disposed about the bore at an interface between the first and second block. Advantageously, the metallic seal improves sealing between the interface between the first block and the second block.

公开(公告)号：US20200056286A1

公开(公告)日：2020-02-20

申请号：US16598768

申请日：2019-10-10

Applicant: ASM IP HOLDING, B.V.

Inventor： Eric James Shero ,  Mohith E. Verghese ,  Carl Louis White ,  Herbert Terhorst ,  Dan Maurice

IPC: C23C16/455 ,  H01L21/02

Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.

公开(公告)号：US20180323056A1

公开(公告)日：2018-11-08

申请号：US15589861

申请日：2017-05-08

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff ,  Bed Sharma ,  Eric James Shero

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01L21/0228 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0332

Abstract: A method for forming a silicon nitride film on a substrate is disclosed. The method may include; forming a cyclical silicon nitride film on the substrate by a cyclical deposition process, wherein the cyclical deposition process comprises at least one of; contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source. The method may also include exposing the cyclical silicon nitride film to a plasma. Semiconductor device structures comprising a silicon nitride film are also disclosed.

公开(公告)号：US20160289828A1

公开(公告)日：2016-10-06

申请号：US15182504

申请日：2016-06-14

Applicant: ASM IP HOLDING, B.V.

Inventor： Eric James Shero ,  Mohith E. Verghese ,  Carl Louis White ,  Herbert Terhorst ,  Dan Mourice

IPC: C23C16/455 ,  H01L21/02

CPC classification number: C23C16/45502 ,  C23C16/45504 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45591 ,  H01L21/0228 ,  Y10T137/85938

Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.

Abstract translation: 一种具有壳体的反应器，其包围可操作地连接到反应室和排气组件的气体输送系统。 气体输送系统包括用于向反应室提供至少一种处理气体的多条气体管线。 气体输送系统还包括用于接收至少一种处理气体的混合器。 混合器可操作地连接到被配置成扩散工艺气体的扩散器。 扩散器直接附接到反应室的上表面，从而在它们之间形成扩散体。 扩散器包括至少一个分配表面，该分配表面被配置为当工艺气体在被引入反应室之前通过扩散器体积时向流化气体提供流量限制。

公开(公告)号：US08894870B2

公开(公告)日：2014-11-25

申请号：US13784362

申请日：2013-03-04

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Eric James Shero ,  Fred Alokozai

IPC: H01L21/302 ,  C23F1/00 ,  C23C16/44 ,  C23F1/08

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

Abstract: A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer.

Abstract translation: 一种用于蚀刻材料的系统和方法，包括具有XYZ制剂的化合物，其中X和Y是一种或多种金属，Z选自一种或多种13-16族元素，例如碳，氮，硼，硅 ，硫，硒和碲。 该方法包括形成一种或多种第一挥发性化合物和金属贫化层的第一蚀刻工艺以及去除金属贫化层的至少一部分的第二蚀刻工艺。

公开(公告)号：US20140220247A1

公开(公告)日：2014-08-07

申请号：US14166462

申请日：2014-01-28

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract translation: 公开了一种用于处理沉积反应器的系统和方法。 该系统和方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺铝的碳化钛膜或铝掺杂的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。

公开(公告)号：US20140217065A1

公开(公告)日：2014-08-07

申请号：US13784362

申请日：2013-03-04

Applicant: ASM IP HOLDING B.V.

Inventor： Jereld Lee Winkler ,  Eric James Shero ,  Fred Alokozai

IPC: C23F1/08 ,  C23F1/00

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

Abstract: A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer.

Abstract translation: 一种用于蚀刻材料的系统和方法，包括具有XYZ制剂的化合物，其中X和Y是一种或多种金属，Z选自一种或多种13-16族元素，例如碳，氮，硼，硅 ，硫，硒和碲。 该方法包括形成一种或多种第一挥发性化合物和金属贫化层的第一蚀刻工艺以及去除金属贫化层的至少一部分的第二蚀刻工艺。

公开(公告)号：US20240379368A1

公开(公告)日：2024-11-14

申请号：US18780059

申请日：2024-07-22

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero

IPC: H01L21/285 ,  C23C16/04 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56

Abstract: Vapor deposition processes are provided for bottom up filling of trenches and other structures with metal nitrides such as vanadium nitride and titanium nitride. In some embodiments, VCl4 can be used as an etchant source in the deposition processes. The reaction conditions are selected such that some Cl2 forms in the reaction space and preferentially etches deposited metal nitride at the upper surfaces of a trench or other three-dimensional feature on a substrate. The self-etching during the deposition process facilitates a bottom up filling of the feature and may reduce or eliminate the formation of seams or voids.