公开(公告)号：US20230230813A2

公开(公告)日：2023-07-20

申请号：US17744902

申请日：2022-05-16

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/32

CPC classification number: H01J37/32495 ,  C23C16/4405 ,  C23C16/4404 ,  C23C16/32

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

公开(公告)号：US10714350B2

公开(公告)日：2020-07-14

申请号：US15795056

申请日：2017-10-26

Applicant: ASM IP Holding B.V.

Inventor： Jerry Peijun Chen ,  Fred Alokozai

IPC: H01L21/285 ,  H01L21/28 ,  H01L49/02 ,  H01L23/532 ,  H01L21/768 ,  H01L29/49 ,  H01L27/108

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

公开(公告)号：US09340874B2

公开(公告)日：2016-05-17

申请号：US14634342

申请日：2015-02-27

Applicant: ASM IP Holding B.V.

Inventor： Michael Halpin ,  Eric Shero ,  Carl White ,  Fred Alokozai ,  Jerry Winkler ,  Todd Dunn

IPC: B01J19/00 ,  C23C16/44 ,  B01J8/00 ,  H01L21/67 ,  C23C16/458

CPC classification number: C23C16/4409 ,  B01J8/0035 ,  B01J19/0073 ,  C23C16/4585 ,  H01L21/67126

Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.

公开(公告)号：US20160115590A1

公开(公告)日：2016-04-28

申请号：US14987420

申请日：2016-01-04

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract translation: 公开了一种用于处理沉积反应器的系统和方法。 该系统和方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺铝的碳化钛膜或铝掺杂的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。

公开(公告)号：US20240030035A1

公开(公告)日：2024-01-25

申请号：US18376597

申请日：2023-10-04

Applicant: ASM IP Holding B.V.

Inventor： Jerry Peijun Chen ,  Fred Alokozai

IPC: H01L21/285 ,  H01L21/28 ,  H01L23/532 ,  H01L21/768 ,  H01L29/49 ,  H10B12/00 ,  C23C16/34 ,  C23C16/455 ,  H01L21/02

CPC classification number: H01L21/28568 ,  H01L21/28556 ,  H01L21/28088 ,  H01L28/60 ,  H01L23/53266 ,  H01L21/76849 ,  H01L29/4966 ,  H01L21/76847 ,  H01L28/90 ,  H01L23/53238 ,  H01L21/28562 ,  H01L23/53209 ,  H01L21/76843 ,  H10B12/00 ,  C23C16/34 ,  C23C16/45531 ,  H01L28/91 ,  H01L21/0228 ,  H01L21/02205 ,  H01L21/0254 ,  H10B12/033 ,  H01L2924/01041

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

公开(公告)号：US20220277937A1

公开(公告)日：2022-09-01

申请号：US17744902

申请日：2022-05-16

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/32

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

公开(公告)号：US09605342B2

公开(公告)日：2017-03-28

申请号：US14659152

申请日：2015-03-16

Applicant: ASM IP Holding B.V.

Inventor： Fred Alokozai ,  Robert Brennan Milligan

IPC: C23C16/452 ,  C23C16/455 ,  C23C16/507 ,  H01J37/32 ,  H01L21/02 ,  H01L21/285

CPC classification number: C23C16/505 ,  C23C16/452 ,  C23C16/45563 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  Y10T137/6851

Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.

公开(公告)号：US09018111B2

公开(公告)日：2015-04-28

申请号：US13948055

申请日：2013-07-22

Applicant: ASM IP Holding B.V.

Inventor： Robert Brennan Milligan ,  Fred Alokozai

IPC: H01L21/67 ,  C23C16/455 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/314 ,  H01J37/32

CPC classification number: H01J37/32357 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45514 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32651 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/3145 ,  H01L21/67017 ,  H01L21/67069

Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.

Abstract translation: 一种处理室，包括具有处理区域的反应室，与处理区域连通的处理气体入口，与处理气体入口连通的第一激发物质生成区域和与处理气体入口连通的第二退出物质生成区域 。 一种处理衬底的方法，包括以下步骤：在处理区域内加载衬底，激活第一激发物种生成区以在第一脉冲期间向处理区域提供第一激发物质前体，以及激活第二激发物质产生区 在第二脉冲期间将不同于第一激发物质前体的第二激发物质前体提供给处理区域。

公开(公告)号：US20130292676A1

公开(公告)日：2013-11-07

申请号：US13874708

申请日：2013-05-01

Applicant: ASM IP HOLDING B.V.

Inventor： Robert Brennan Milligan ,  Fred Alokozai

IPC: H01L29/49 ,  H01L29/40

CPC classification number: H01L29/4908 ,  H01L21/28088 ,  H01L21/67167 ,  H01L21/67253 ,  H01L29/401 ,  H01L29/4966 ,  H01L29/517

Abstract: Nitrogen-containing phase-stabilized films, methods of forming phase-stabilized films, and structures and devices including the phase-stabilized films are disclosed. The phase-stabilized films include a matrix material and a phase stabilizer, which provides a morphologically stabilizing effect to a matrix material within the films. The phase-stabilized films may be used as, for example, gate electrodes and similar films in microelectronic devices.

Abstract translation: 公开了含氮相稳定膜，形成相稳定膜的方法，以及包括相稳定膜的结构和器件。 相稳定膜包括基质材料和相稳定剂，其为膜内的基质材料提供形态稳定作用。 相位稳定膜可以用作例如微电子器件中的栅电极和类似膜。

公开(公告)号：US20220228264A1

公开(公告)日：2022-07-21

申请号：US17714383

申请日：2022-04-06

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Robert Brennan Milligan ,  William George Petro ,  Eric Wang ,  Fred Alokozai ,  Dong Li ,  Hao Wang ,  Melvin Verbaas ,  Luping Li

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/52 ,  C23C16/46 ,  C23C16/44

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.