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    SELECTIVE PEALD OF OXIDE ON DIELECTRIC
    81.
    发明申请
    SELECTIVE PEALD OF OXIDE ON DIELECTRIC 审中-公开

    公开(公告)号：US20200066512A1

    公开(公告)日：2020-02-27

    申请号：US16605475

    申请日：2018-05-03

    Applicant: ASM IP Holding B.V.

    Inventor： Eva Tois ,  Viljami Pore ,  Suvi Haukka ,  Toshiya Suzuki ,  Lingyun Jia ,  Sun Ja Kim ,  Oreste Madia

    IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

    Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.

    Deposition of SiN
    82.
    发明申请
    Deposition of SiN 审中-公开

    公开(公告)号：US20190295838A1

    公开(公告)日：2019-09-26

    申请号：US16381634

    申请日：2019-04-11

    Applicant: ASM IP Holding B.V.

    Inventor： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

    IPC: H01L21/02 ,  C23C16/455 ,  C23C16/04 ,  C23C16/34

    Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

    Deposition of SiN
    83.
    发明授权
    Deposition of SiN 有权

    公开(公告)号：US10262854B2

    公开(公告)日：2019-04-16

    申请号：US15706435

    申请日：2017-09-15

    Applicant: ASM IP Holding B.V.

    Inventor： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

    IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455

    Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

    ATOMIC LAYER DEPOSITION OF SILICON CARBON NITRIDE BASED MATERIALS
    85.
    发明申请
    ATOMIC LAYER DEPOSITION OF SILICON CARBON NITRIDE BASED MATERIALS 审中-公开

    公开(公告)号：US20180082838A1

    公开(公告)日：2018-03-22

    申请号：US15820916

    申请日：2017-11-22

    Applicant: ASM IP HOLDING B.V.

    Inventor： Viljami Pore

    IPC: H01L21/02 ,  H01L21/311

    CPC classification number: H01L21/02167 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31111

    Abstract: A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a SiN sub-cycle and a SiCN sub-cycle. The SiN sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor. The SiCN sub-cycle can include alternately and sequentially contacting the substrate with carbon-containing precursor and a SiCN sub-cycle nitrogen precursor. The SiN sub-cycle and the SiCN sub-cycle can include atomic layer deposition (ALD). The process for depositing the silicon carbon nitride film can include a plasma treatment. The plasma treatment can follow a completed plurality of complete deposition cycles.

    Deposition of SiN
    86.
    发明申请
    Deposition of SiN 审中-公开

    公开(公告)号：US20170372886A1

    公开(公告)日：2017-12-28

    申请号：US15426593

    申请日：2017-02-07

    Applicant: ASM IP Holding B.V.

    Inventor： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

    IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  C23C16/04

    Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

    Si precursors for deposition of SiN at low temperatures
    88.
    发明授权
    Si precursors for deposition of SiN at low temperatures 有权
    Si前体，用于在低温下沉积SiN

    公开(公告)号：US09564309B2

    公开(公告)日：2017-02-07

    申请号：US14167904

    申请日：2014-01-29

    Applicant: ASM IP HOLDING B.V.

    Inventor： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Suvi P. Haukka

    IPC: H01L21/02 ,  H01L21/311

    CPC classification number: H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/823431

    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

    Abstract translation: 提供了通过原子层沉积（ALD）沉积氮化硅膜的方法和前体。 在一些实施方案中，硅前体包含碘配体。 当沉积到诸如FinFETS或其它类型的多栅极FET的三维结构上时，氮化硅膜可以具有相对均匀的垂直和水平部分的蚀刻速率。 在一些实施方案中，本公开的各种氮化硅膜具有小于具有稀释HF（0.5％）的热氧化物去除速率的一半的蚀刻速率。

    Atomic layer deposition of silicon carbon nitride based materials
    90.
    发明授权
    Atomic layer deposition of silicon carbon nitride based materials 有权
    硅氮化硅基材料的原子层沉积

    公开(公告)号：US09401273B2

    公开(公告)日：2016-07-26

    申请号：US14566491

    申请日：2014-12-10

    Applicant: ASM IP HOLDING B.V.

    Inventor： Viljami Pore

    IPC: H01L21/02 ,  H01L21/311

    CPC classification number: H01L21/02167 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31111

    Abstract: A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a SiN sub-cycle and a SiCN sub-cycle. The SiN sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor. The SiCN sub-cycle can include alternately and sequentially contacting the substrate with carbon-containing precursor and a SiCN sub-cycle nitrogen precursor. The SiN sub-cycle and the SiCN sub-cycle can include atomic layer deposition (ALD). The process for depositing the silicon carbon nitride film can include a plasma treatment. The plasma treatment can follow a completed plurality of complete deposition cycles.

    Abstract translation: 用于在衬底上沉积氮化硅膜的工艺可以包括多个完整的沉积循环，每个完整的沉积循环具有SiN子循环和SiCN子循环。 SiN子循环可以包括交替地和顺序地接触衬底与硅前体和SiN子循环氮前体。 SiCN子循环可以包括交替地和顺序地接触底物与含碳前体和SiCN亚循环氮前体。 SiN子循环和SiCN子循环可以包括原子层沉积（ALD）。 沉积氮化硅膜的工艺可以包括等离子体处理。 等离子体处理可以完成多个完整的沉积循环。

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