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公开(公告)号:US09160025B2
公开(公告)日:2015-10-13
申请号:US14460122
申请日:2014-08-14
Applicant: Applied Materials, Inc.
Inventor: Gregory J. Wilson , Kyle M. Hanson
CPC classification number: H01M8/186 , H01M4/42 , H01M8/0232 , H01M8/0245 , H01M8/188 , H01M8/20 , H01M12/08 , H01M2250/00 , Y02E60/528
Abstract: Embodiments of the invention generally provide for flow battery cells and systems containing a plurality of flow battery cells, and methods for improving metal plating within the flow battery cell, such as by flowing and exposing the catholyte to various types of cathodes. In one embodiment, a flow battery cell is provided which includes a cathodic half cell and an anodic half cell separated by an electrolyte membrane, wherein the cathodic half cell contains a plurality of cathodic wires extending perpendicular or substantially perpendicular to and within the catholyte pathway and in contact with the catholyte, and each of the cathodic wires extends parallel or substantially parallel to each other. In some examples, the plurality of cathodic wires may have at least two arrays of cathodic wires, each array contains at least one row of cathodic wires, and each row extends along the catholyte pathway.
Abstract translation: 本发明的实施例通常提供了包含多个流动电池单元的流动电池单元和系统,以及用于改善流动电池单元内的金属电镀的方法,例如通过将阴极电解液流过和暴露于各种类型的阴极。 在一个实施例中,提供了流动电池单元,其包括阴极半电池和由电解质膜分离的阳极半电池,其中阴极半电池包含垂直于或基本垂直于阴极电解液通道延伸的多个阴极线, 与阴极电解液接触,并且每个阴极线彼此平行或基本平行延伸。 在一些示例中,多个阴极线可以具有至少两个阴极线阵列,每个阵列包含至少一排阴极线,并且每排沿着阴极电解液通道延伸。
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82.
公开(公告)号:US20140367264A1
公开(公告)日:2014-12-18
申请号:US13920709
申请日:2013-06-18
Applicant: APPLIED Materials, Inc.
Inventor: Gregory J. Wilson , Paul R. McHugh
CPC classification number: C25D17/001 , C25D17/007 , C25D17/008 , C25D17/10 , C25D21/12
Abstract: In an electroplating processor having at least one anode and one thief electrode, reference electrodes are used to measure a voltage gradient in the electrolyte near the edge of the wafer. The voltage gradient is used to calculate the current at the wafer surface using a control volume/current balance technique. The fraction of the total wafer current flowing to the edge region of the wafer is determined and compared to a target value. The processor controller changes at least one of the anode and thief currents to bring the actual edge region current toward the target current.
Abstract translation: 在具有至少一个阳极和一个窃电电极的电镀处理器中,参考电极用于测量靠近晶片边缘的电解质中的电压梯度。 电压梯度用于使用控制体积/电流平衡技术来计算晶圆表面的电流。 确定流过晶片边缘区域的晶圆总电流的一部分,并将其与目标值进行比较。 处理器控制器改变阳极和小偷电流中的至少一个,以使实际边缘区域电流朝向目标电流。
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